Thin-zone TAP reactor as a basis of �state-by-state transient screening

Thin-zone TAP reactor is presented as a basis of the new state-by-state transient screening approach which has been proposed by the authors for non-steady-state kinetic characterization of industrial catalysts. The general thin-zone TAP reactor model is described, and its mathematical status is justified analytically. It is shown that this model provides high enough accuracy to be applicable in the wide conversion interval (up to 90%), which is an important advantage of this approach compared with the traditional differential reactor.

LPCVD of tungsten by selective deposition on silicon

Beta-phase W, selectively grown at 440C had resistivity 20 micro-ohm cm and maximum layer thickness 100nm. Hydrogen passivation proved essential in this process. Higher deposition temperatures resulted in increased layer thickness but incorporated WSi2 and alpha- phase W. Self limiting W grown on polycrystalline and heavily doped silicon yielded reduced thickness. Boron is involved in the WF6 reduction reaction but phosphorus is not and becomes incorporated in the W layer. The paper establishes an optimised and novel CVD process suited to IC contact technology. A funded technology transfer contract with National Semiconductor Greenock (M Fallon) resulted from this work.