Amorphous carbon for use in thin film transistors

Tetrahedrally bonded amorphous carbon (ta-C) is a new type of semiconducting thin film material. It can be produced at room temperature using the Filtered Cathodic Vacuum Arc technique. The as-grown undoped ta-C is p-type in nature but it can be n-doped by the addition of nitrogen during deposition. This paper will describe thin film transistor design and fabrication using ta-C as the active channel layer.

Carbon based bottom gate thin film transistor

This paper describes the fabrication and characterization of a carbon based, bottom gate, thin film transistor (TFT). The active layer is formed from highly sp2 bonded nitrogenated amorphous carbon (a-C:N) which is deposited at room temperature using a filtered cathodic vacuum arc technique. The TFT shows p-channel operation. The device exhibits a threshold voltage of 15 V and a field effect mobility of 10-4 cm2 V-1 s-1 . The valence band tail of a-C:N is observed to be much shallower than that of a-Si:H, but does not appear to severely impede the shift of the Fermi level. This may indicate that a significant proportion of the a-C tail states can still contribute to conduction.

Hydrogenated amorphous silicon and silicon nitride deposited at less than 100° C by ECR-PECVD for thin film transistors

A systematic study has been made of the growth of both hydrogenated amorphous silicon (a-Si:H) and silicon nitride (a-SiN) by electron cyclotron resonance plasma enhanced chemical vapour deposition (ECR-PECVD). In the case of a-SiN, helium and nitrogen gas is injected into the system such that it passes through the resonance zone. These highly ionised gases provide sufficient energy to ionise the silane gas, which is injected further downstream. It is demonstrated that a gas phase reaction occurs between the silane and nitrogen species. It is control of the ratio of silane to nitrogen in the plasma which is critical for the production of stoichiometric a-SiN. Material has been produced at 80°C with a Si:N ratio of 1:1.3 a breakdown strength of ∼6 MV cm-1 and resistivity of > 1014 Ω cm. In the case of a-Si:H, helium and hydrogen gas is injected into the ECR zone and silane is injected downstream. It is shown that control of the gas phase reactions is critical in this process also. a-Si:H has been deposited at 80 °C with a dark conductivity of 10-11 Ω-1 cm-1 and a photosensitivity of justbelowl 4×104. Such materials are suitable for use in thin film transistors on plastic substrates.

Analysis of the piston ring/liner oil film development during warm-up for an SI-engine

A one-dimensional ring-pack lubrication model developed at MIT is applied to simulate the oil film behavior during the warm-up period of a Kohler spark ignition engine [1]. This is done by making assumptions for the evolution of the oil temperatures during warm-up and that the oil control ring during downstrokes is fully flooded. The ring-pack lubrication model includes features such as three different lubrication regimes, i.e. pure hydrodynamic lubrication, boundary lubrication and pure asperity contact, non-steady wetting of both inlet and outlet of the piston ring, capability to use all ring face profiles that can be approximated by piece-wise polynomials and, finally, the ability to model the rheology of multi-grade oils. Not surprisingly, the simulations show that by far the most important parameter is the temperature dependence of the oil viscosity. This dependence is subsequently examined further by choosing different oils. The baseline oil is SAE 10W30 and results are compared to those using the SAE 30 and the SAE 10W50 oils.

The development of aerodynamic performance measurements in a transient test facility

Transient test facilities offer the potential for the simultaneous study of turbine aerodynamic performance, unsteady flow phenomena and the heat transfer characteristics of a turbine stage. This paper describes the development of aerodynamic performance measurement techniques in the Oxford Rotor Facility (ORF). The solutions to the technological issues involved with transient testing presented in this paper are expected to achieve levels of precision uncertainty comparable with traditional steady flow test rigs. The theoretical background to the measurement of aerodynamic performance is presented together with a comprehensive pre-test uncertainty analysis. The instrumentation scheme for the measurement of stage mass flow rate is discussed in detail, the measurements of shaft power, total inlet enthalpy, and stage pressure ratio are also outlined. The current working section features a 62% scale, 1-1/2 stage, high-pressure shroudless transonic turbine. The required inlet flow conditions are provided by an Isentropic Light Piston Tunnel (ILPT) with a quasi-steady state run time of approximately 70ms. The testing is conducted at engine representative specific speed, pressure ratio, gas-to-wall temperature ratio, Mach number and Reynolds number.

Compositional analysis of thin film amorphous semiconductors and insulators using LIMA

LIMA (Laser-induced Ion Mass Analysis) is a new technique capable of compositional analysis of thin films and surface regions. Under UHV conditions a focused laser beam evaporates and ionizes a microvolume of specimen material from which a mass spectrum is obtained. LIMA has been used to examine a range of thin film materials with applications in electronic devices. The neutral photon probe avoids charging problems, and low conductivity materials are examined without prior metallization. Analyses of insulating silicon oxides, nitrides, and oxynitrides confirm estimates of composition from infrared measurements. However, the hydrogen content of hydrogenated amorphous silicon (a-Si : H) found by LIMA shows no correlation with values given by infrared absorption analysis. Explanations are proposed and discussed. © 1985.

Characterization of defect removal in hydrogenated and deuterated amorphous silicon thin film transistors

Thin film transistors (TFTs) utilizing an hydrogenated amorphous silicon (a-Si:H) channel layer exhibit a shift in the threshold voltage with time under the application of a gate bias voltage due to the creation of metastable defects. These defects are removed by annealing the device with zero gate bias applied. The defect removal process can be characterized by a thermalization energy which is, in turn, dependent upon an attempt-to-escape frequency for defect removal. The threshold voltage of both hydrogenated and deuterated amorphous silicon (a-Si:D) TFTs has been measured as a function of annealing time and temperature. Using a molecular dynamics simulation of hydrogen and deuterium in a silicon network in the H2 * configuration, it is shown that the experimental results are consistent with an attempt-to-escape frequency of (4.4 ± 0.3) × 1013 Hz and (5.7 ± 0.3) × 1013 Hz for a-Si:H and a-Si:D respectively which is attributed to the oscillation of the Si-H and Si-D bonds. Using this approach, it becomes possible to describe defect removal in hydrogenated and deuterated material by the thermalization energies of (1.552 ± 0.003) eV and (1.559 ± 0.003) eV respectively. This correlates with the energy per atom of the Si-H and Si-D bonds. © 2006 Elsevier B.V. All rights reserved.

Numerical simulations of unsteady wet steam flows with non-equilibrium condensation in the nozzle and the steam turbine

Numerical techniques for non-equilibrium condensing flows are presented. Conservation equations for homogeneous gas-liquid two-phase compressible flows are solved by using a finite volume method based on an approximate Riemann solver. The phase change consists of the homogeneous nucleation and growth of existing droplets. Nucleation is computed with the classical Volmer-Frenkel model, corrected for the influence of the droplet temperature being higher than the steam temperature due to latent heat release. For droplet growth, two types of heat transfer model between droplets and the surrounding steam are used: a free molecular flow model and a semi-empirical two-layer model which is deemed to be valid over a wide range of Knudsen number. The computed pressure distribution and Sauter mean droplet diameters in a convergent-divergent (Laval) nozzle are compared with experimental data. Both droplet growth models capture qualitatively the pressure increases due to sudden heat release by the non-equilibrium condensation. However the agreement between computed and experimental pressure distributions is better for the two-layer model. The droplet diameter calculated by this model also agrees well with the experimental value, whereas that predicted by the free molecular model is too small. Condensing flows in a steam turbine cascade are calculated at different Mach numbers and inlet superheat conditions and are compared with experiments. Static pressure traverses downstream from the blade and pressure distributions on the blade surface agree well with experimental results in all cases. Once again, droplet diameters computed with the two-layer model give best agreement with the experiments. Droplet sizes are found to vary across the blade pitch due to the significant variation in expansion rate. Flow patterns including oblique shock waves and condensation-induced pressure increases are also presented and are similar to those shown in the experimental Schlieren photographs. Finally, calculations are presented for periodically unsteady condensing flows in a low expansion rate, convergent-divergent (Laval) nozzle. Depending on the inlet stagnation subcooling, two types of self-excited oscillations appear: a symmetric mode at lower inlet subcooling and an asymmetric mode at higher subcooling. Plots of oscillation frequency versus inlet sub-cooling exhibit a hysteresis loop, in accord with observations made by other researchers for moist air flow. Copyright © 2006 by ASME.

Thin film shape memory alloys for optical sensing applications

Based on shape memory effect of the sputtered thin film shape memory alloys, different types of micromirror structures were designed and fabricated for optical sensing application. Using surface micromachining, TiNi membrane mirror structure has been fabricated, which can be actuated based on intrinsic two-way shape memory effect of the free-standing TiNi film. Using bulk micromachining, TiNi/Si and TiNi/Si 3N 4microcantilever mirror structures were fabricated. © 2007 IOP Publishing Ltd.

How to achieve high mobility thin film transistors by direct deposition of silicon using 13.56 MHz RF PECVD?

CMOS nanocrystalline silicon thin film transistors with high field effect mobility are reported. The transistors were directly deposited by radio-frequency plasma enhanced chemical vapor deposition at 150°C The transistors show maximum field effect mobility of 450 cm2/V-s for electrons and 100 cm2/V-s for holes at room temperature. We attribute the high mobilities to a reduction of the oxygen content, which acts as an accidental donor. Indeed, secondary ion mass spectrometry measurements show that the impurity concentration in the nanocrystalline Si layer is comparable to, or lower than, the defect density in the material, which is already low thanks to hydrogen passivation.

Transient thermal analysis of power devices based on Fourier-series thermal model

A new thermal model based on Fourier series expansion method has been presented for dynamic thermal analysis on power devices. The thermal model based on the Fourier series method has been programmed in MATLAB SIMULINK and integrated with a physics-based electrical model previously reported. The model was verified for accuracy using a two-dimensional Fourier model and a two-dimensional finite difference model for comparison. To validate this thermal model, experiments using a 600V 50A IGBT module switching an inductive load, has been completed under high frequency operation. The result of the thermal measurement shows an excellent match with the simulated temperature variations and temperature time-response within the power module. ©2008 IEEE.

Thin film shape memory alloys and microactuators

For Micro-electro-mechanical System (MEMS) applications, TiNi-based thin film Shape Memory Alloys (SMAs) possess many desirable properties, such as high power density, large transformation stress and strain upon heating and cooling, superelasticity and biocompatibility. In this paper, recent development in TiNi-based thin film SMA and microactuator applications is discussed. The topics related to film deposition and characterisation is mainly focused on crystal nucleation and growth during annealing, film thickness effect, film texture, stress induced surface relief, wrinkling and trenches as well as Temperature Memory Effect (TME). The microactuator applications are mainly focused on microvalve and microcage for biological applications, micromirror for optical applications and data storage using nanoindentation method. Copyright © 2009, Inderscience Publishers.

Erratum: "Zinc oxide nanostructures and high electron mobility nanocomposite thin film transistors" (IEEE Transactions on Electron Devices (2009))

In the above entitled paper (ibid., vol. 55, no. 11, pp. 3001-3011), two errors were noticed after the paper went to press. The errors are corrected here.

Novel dual transient temperature modulation technique for multi-vapour detection

Here we present a novel signal processing technique for a square wave thermally-modulated carbon black/polymer composite chemoresistor. The technique consists of only two mathematical operations: summing the off-transient and on-transient conductance signals; and subtracting the steady-state conductance signal. A single carbon black/polyvinylpyrrolidone composite chemo -resistor was fabricated and used to demonstrate the validity of the technique. Classification of water, methanol and ethanol vapours was successfully performed using only the peak time of the resultant curves. Quantification of the different vapours was also possible using the height of the peaks, because it was linearly proportional to concentration. This technique does not require zero-gas calibration and thus is superior to previously reported methods. ©2009 IEEE.