Application of electron beams in thermal processing of semiconductor materials and devices

Rapid and effective thermal processing methods using electron beams are described in this paper. Heating times ranging from a fraction of a second to several seconds and temperatures up to 1400°C are attainable. Applications such as the annealing of ion implanted material, both without significant dopant diffusion and with highly controlled diffusion of impurities, are described. The technique has been used successfully to activate source/drain regions for fine geometry NMOS transistors. It is shown that electron beams can produce localised heating of semiconductor substrates and a resolution of approximately 1 μm has been achieved. Electron beam heating has been applied to improving the crystalline quality of silicon-on sapphire used in CMOS device fabrication. Silicon layers with defect levels approaching bulk material have been obtained. Finally, the combination of isothermal and selective annealing is shown to have application in recrystallisation of polysilicon films on an insulating layer. The approach provides the opportunity of producing a silicon-on-insulator substrate with improved crystalline quality compared to silicon-on-sapphire at a potentially lower cost. It is suggested that rapid heating methods are expected to provide a real alternative to conventional furnace processing of semiconductor devices in the development of fabrication technology. © 1984 Benn electronics Publications Ltd, Luton.

Degradation evaluation of microelectromechanical thermal actuators

Metal based thermal microactuators normally have lower operation temperatures than those of Si-based ones; hence they have great potential for applications. However, metal-based thermal actuators easily suffer from degradation such as plastic deformation. In this study, planar thermal actuators were made by a single mask process using electroplated nickel as the active material, and their thermal degradation has been studied. Electrical tests show that the Ni-based thermal actuators deliver a maximum displacement of ∼20μm at an average temperature of ∼420°C, much lower than that of Si-based microactuators. However, the displacement strongly depends on the frequency and peak voltage of the pulse applied. Back bending was clearly observed at a maximum temperature as low as 240°C. Both forward and backward displacements increase with increasing the temperature up to ∼450°C, and then decreases with power. Scanning electron microscopy observation clearly showed that Ni structure deforms and reflows at power above 50mW. The compressive stress is believed to be responsible for Ni piling-up (creep), while the tensile stress upon removing the pulse current is responsible for necking at the hottest section of the device. Energy dispersive X-ray diffraction analysis revealed severe oxidation of the Ni-structure induced by Joule-heating of the current.

Advanced thermal processing of semiconductor materials in the msec-range

This paper reviews the advances that flash lamp annealing brings to the processing of the most frequently used semiconductor materials, namely silicon and silicon carbide, thus enabling the fabrication of novel microelectronic structures and materials. The paper describes how such developments can translate into important practical applications leading to a wide range of technological benefits. Opportunities in ultra-shallow junction formation, heteroepitaxial growth of thin films of cubic silicon carbide on silicon, and crystallization of amorphous silicon films, along with the technical reasons for using flash lamp annealing are discussed in the context of state-of-the-art materials processing. © 2005 IEEE.

Transient thermal analysis of power devices based on Fourier-series thermal model

A new thermal model based on Fourier series expansion method has been presented for dynamic thermal analysis on power devices. The thermal model based on the Fourier series method has been programmed in MATLAB SIMULINK and integrated with a physics-based electrical model previously reported. The model was verified for accuracy using a two-dimensional Fourier model and a two-dimensional finite difference model for comparison. To validate this thermal model, experiments using a 600V 50A IGBT module switching an inductive load, has been completed under high frequency operation. The result of the thermal measurement shows an excellent match with the simulated temperature variations and temperature time-response within the power module. ©2008 IEEE.

The elastic-plastic indentation response of a columnar thermal barrier coating

Thermal barrier coatings with a columnar microstructure are prone to erosion damage by a mechanism of surface cracking upon impact by small foreign particles. In order to explore this erosion mechanism, the elastic indentation and the elastic-plastic indentation responses of a columnar thermal barrier coating to a spherical indenter were determined by the finite element method and by analytical models. It was shown that the indentation response is intermediate between that of a homogeneous half-space and that given by an elastic-plastic mattress model (with the columns behaving as independent non-linear springs). The sensitivity of the indentation behaviour to geometry and to the material parameters was explored: the diameter of the columns, the gap width between columns, the coefficient of Coulomb friction between columns and the layer height of the thermal barrier coating. The calculations revealed that the level of induced tensile stress is sufficient to lead to cracking of the columns at a depth of about the column radius. It was also demonstrated that the underlying soft bond coat can undergo plastic indentation when the coating comprises parallel columns, but this is less likely for the more realistic case of a random arrangement of tapered columns. © 2009 Elsevier B.V.

Study of the electric loading aspects of the BDFM using a lumped parameter thermal model

Details of a lumped parameter thermal model for studying thermal aspects of the frame size 180 nested loop rotor BDFM at the University of Cambridge are presented. Predictions of the model are verified against measured end winding and rotor bar temperatures that were measured with the machine excited from a DC source. The model is used to assess the thermal coupling between the stator windings and rotor heating. The thermal coupling between the stator windings is assessed by studying the difference of the steady state temperatures of the two stator end windings for different excitations. The rotor heating is assessed by studying the temperatures of regions of interest for different excitations.

High speed electro-thermal models for inverter simulations

This paper presents the application of advanced compact models of the IGBT and PIN diode to the full electrothermal system simulation of a hybrid electric vehicle converter using a look-up table of device losses. The Fourier-based solution model is used, which takes account of features such as local lifetime control and field-stop technology. Device and circuit parameters are extracted from experimental waveforms and device structural data. Matching of the switching waveforms and the resulting generation of the look-up table is presented. An example of the use of the look-up tables in simulation of inverter device temperatures is also given, for a hypothetical electric vehicle subjected to an urban driving cycle. © 2006 IEEE.