Nanoelectromechanical DRAM for ultra-large-scale integration (ULSI)

A Nanoelectromechanical (NEM) device developed for dynamic random access memory (DRAM) is reported. A vertical nanotube structure is employed to form the electromechanical switch and capacitor structure. The mechanical movement of the nanotube defines 'On' and 'OFF' states and the electrical signals which result lead to charge storage in a vertical capacitor structure as in a traditional DRAM. The vertical structure contributes greatly to a decrease in cell dimension. The main concept of the NEM switch and capacitor can be applied to other memory devices as well. © 2005 IEEE.

Surface temperature and precipitation variations in the western U.S. and their relation to large scale circulation indices [abstract]

EXTRACT (SEE PDF FOR FULL ABSTRACT): An analysis of the principal components of surface temperature and precipitation in the western U.S. is presented. Data consist of monthly mean temperature and total precipitation for 66 climate divisions west of the Continental Divide, for the years 1931-1984. The analysis is repeated for three separate combinations of months - the water year (Oct - Sept), the cool season (Oct - Mar) and the warm season (Apr - Sept). Inspection of monthly precipitation climatology indicates that selection of these combinations of months results in very few awkward splittings of the natural precipitation seasons found in the West.