Comparação da difusão de fósforo em solos brasileiros para diferentes fertilizantes granulados usando fluorescência de raios X por reflexão total por radiação síncroton (SR-TXRF)

O fósforo (P) é um nutriente essencial para o crescimento das plantas. Milhões de toneladas de P são aplicados aos solos anualmente. No entanto, apenas uma pequena fração do P aplicado com fertilizantes é aproveitada nas lavouras no ano de aplicação, bem como a eficácia do fertilizante fosfatado diminui com o tempo. Para melhorar a nossa compreensão dos mecanismos, a esta resposta do P no campo, este trabalho visa estudar a migração desse elemento em solos tropicais brasileiros (Latossolo vermelho e Latossolo amarelo) tratados com três tipos de fertilizantes: fosfato monoamônico (MAP), o polímero revestido de fosfato monoamônio (MAPP) e fosfato organomineral (OMP) em um experimento de placa de Petri. Fluorescência de Raios X por Reflexão Total (TXRF) foi usada para determinar o fluxo difusivo P a distâncias radiais diferentes (entre 0 e 7,5 mm, entre 7,5 e 13,5 mm, 13,5 e 25,5 mm e entre 25,5 e 43 mm) a partir do grânulo de fertilizante. As análises usando TXRF foram realizadas no Laboratório Nacional de Luz Síncrotron (LNLS), em Campinas, São Paulo, na linha de Fluorescência de Raios X (Beamline D09B). Depois de um período de cinco semanas, a concentração total de P, Ca e Al foram obtidas e comparadas analisando o tipo de solo/textura, o pH e o respectivo extrator de P, que nesse estudo foram usados o Mehlich 1 e água régia. De forma geral, concluiu-se que 80,0 % de fósforo proveniente dos fertilizantes usados nessa proposta ficaram concentrados em distâncias menores que 10 mm do ponto de aplicação dos fertilizantes, independentemente do tipo de solo, do pH e da respectiva textura. Em relação à utilização da técnica TXRF, o sistema foi eficiente, dentre outras características, na discriminação dos picos de fósforo dos picos de enxofre, principalmente nas amostras de solo usadas a partir da extração com Mehlich 1. Destaca-se isso, pois os raios X característicos desses elementos são muitos próximos.

Age and growth of the swordfish (Xiphias gladius L.) in the waters around Taiwan determined from anal-fin rays

Age and growth of the swordfish (Xiphias gladius) in Taiwan waters was studied from counts of growth bands on cross sections of the second ray of the first anal fin. Data on lower jaw fork length and weight, and samples of the anal fin of male and female swordfish were collected from three offshore and coastal tuna longline fishing ports on a monthly basis between September 1997 and March 1999. In total, 685 anal fins were collected and 627 of them (293 males and 334 females) were aged successfully. The lower jaw fork lengths of the aged individuals ranged from 83.4 to 246.6 cm for the females and from 83.3 to 206 cm for the males. The radii of the fin rays and growth bands on the cross sections were measured under a dissecting microscope equipped with an image analysis system. Trends in the monthly marginal increment ratio indicated that growth bands formed once a year. Thus, the age of each fish was deter-mined from the number of visible growth bands. Two methods were used to estimate and compare the standard and the generalized von Bertalanffy growth parameters for both males and females. The nonlinear least square estimates of the generalized von Bertalanffy growth parameters in method II, in which a power function was used to describe the relationship between ray radius and LJFL, were recommended as most acceptable. There were significant differences in growth parameters between males and females. The growth parameters estimated for females were the following: asymptotic length (L∞) = 300.66 cm, growth coefficient (K) = 0.040/yr, age at zero length (t0) = –0.75 yr, and the fitted fourth parameter (m) = –0.785. The growth parameters estimated for males were the following: asymptotic length (L∞) = 213.05 cm, growth coefficient (K) = 0.086/yr, age at zero length (t0) = –0.626 yr, and the fitted fourth parameter (m) = –0.768.

Valence band offset of MgO/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy

The valence band offset (VBO) of MgO (111)/4H-SiC heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be 3.65 +/- 0.23 eV and the conduction band offset is deduced to be 0.92 +/- 0.23 eV, indicating that the heterojunction has a type- I band alignment. The accurate determination of the valence and conduction band offsets is important for the applications of MgO/SiC optoelectronic devices. (C) 2008 American Institute of Physics.

Valence band offset of ZnO/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy

The valence band offset (VBO) of the wurtzite ZnO/4H-SiC heterojunction is directly determined to be 1.61 +/- 0.23 eV by x-ray photoelectron spectroscopy. The conduction band offset is deduced to be 1.50 +/- 0.23 eV from the known VBO value, which indicates a type-II band alignment for this heterojunction. The experimental VBO value is confirmed and in good agreement with the calculated value based on the transitive property of heterojunctions between ZnO, SiC, and GaN. (C) 2008 American Institute of Physics.

High-speed 2 x 2 silicon-based electro-optic switch with nanosecond switch time

A 2 x 2 electro-optic switch is experimentally demonstrated using the optical structure of a Mach-Zehnder interferometer (MZI) based on a submicron rib waveguide and the electrical structure of a PIN diode on silicon-on-insulator (SOI). The switch behaviour is achieved through the plasma dispersion effect of silicon. The device has a modulation arm of I mm in length and cross-section of 400 nmx340 nm. The measurement results show that the switch has a V pi L pi figure of merit of 0.145 V-cm and the extinction ratios of two output ports and cross talk are 40 dB, 28 dB and -28 dB, respectively. A 3 dB modulation bandwidth of 90 MHz and a switch time of 6.8 ns for the rise edge and 2.7 ns for the fall edge are also demonstrated.

Valence band offset of InN/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy

The valence band offset (VBO) of InN/4H-SiC heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be 0.55 +/- 0.23 eV and the conduction band offset is deduced to be -2.01 +/- 0.23 eV, indicating that the heterojunction has a type-I band alignment. The accurate determination of the valence and conduction band offsets is important for applications of InN/SiC optoelectronic devices.

Decoherence of two Josephson charge qubits coupled via sigma(x)sigma(x)-type coupling and exposed to sigma(x) noise

Decoherence properties of two Josephson charge qubits coupled via the sigma(x)sigma(x) type are investigated. Considering the special structure of this new design, the dissipative effects arising from the circuit impedance providing the fluxes for the qubits' superconducting quantum interference device loops coupled to the sigma(x) qubit variables are considered. The results show that the overall decoherence effects are significantly strong in this qubit design. It is found that the dissipative effects are stronger in the case of coupling to two uncorrelated baths than are found in the case of one common bath.

Optical properties of alloy states in GaNxAs1-x (x < 0.01)

A set of GaNxAs1-x samples with a small content of nitrogen (N) (< 1%) were investigated by continuous-wave photoluminescence (PL), pulse-wave excitation PL, and photo reflectance technology. Temperature-and excitation-dependence of PL disclosed the intrinsic band gap properties of alloy states in GaNxAs1-x, which was extremely different from the N-related impurity states. At the same time, PR spectra were also studied in this work.

Photon localization and lasing in disordered GaNxAs1-x optical superlattices

We propose an approach to fabricate a disordered optical superlattice using microcracking faces in GaNxAs1-x epilayers. Laser action is observed and the emission exhibits random laser behaviors. A transfer-matrix simulation suggests photon localization occurs at the lasing modes.

Lifetime study of N impurity states in GaAs1-xNx (x=0.1%) under hydrostatic pressure

The lifetimes of a series of N-related photoluminescence lines (A(2)-A(6)) in GaAs1-xNx (x=0.1%) were studied under hydrostatic pressures at similar to 30 K. The lifetimes of A(5) and A(6) were found to increase rapidly with increasing pressure: from 2.1 ns at 0 GPa to more than 20 ns at 0.92 GPa for A(5) and from 3.2 ns at 0.63 GPa to 10.8 ns at 0.92 GPa for A(6). The lifetime is found to be closely correlated with the binding energy of the N impurity states, which is shown either in the pressure dependence for a given emission line or in the lifetime variation from A(2) to A(6). (c) 2006 American Institute of Physics.

Lasing of CdSexS1-x quantum dots in a glass spherical microcavity

A glass spherical microcavity only a few microns in diameter embedded with CdSexS1-x quantum dots (QDs) was fabricated using a physical method; it exhibited good optical stability under continuous-wave laser excitation with high power. We investigated the excitation power dependences of the emission intensity and the linewidth of both transverse electric and transverse magnetic resonance peaks of whispering gallery modes. Stimulated emission behaviour of multi-frequency modes is observed at room temperature. The low threshold value and large mode separation makes QD-containing microspheres promising for visible microlaser applications.

Photoluminescence study of CdSexS1-x quantum dots in a glass spherical microcavity

The photoluminescence (PL) of CdSexS1-x semiconductor quantum dots (QDs) in a glass spherical microcavity is investigated. The CdSexS1-x semiconductor clusters embedded in a glass matrix are fabricated by using the heat treatment method. Periodical structures consisting of sharp spectral lines are observed in the PL spectra of CdSexS1-x QDs, which can be well explained by the coupling with the whispering gallery modes of the spherical microcavity based on Mie scattering theory.

Evidence of Gamma-X sequential resonant tunneling in GaAs/AlAs superlattices

We have studied the sequential resonant tunneling of doped weakly coupled GaAs/AlAs superlattices under hydrostatic pressure up to 4.5 kbar. The pressure coefficient obtained from the experiment, 15.3 meV/kbar, provides a strong evidence for the formation of the electric field domain due to Gamma-X sequential resonant tunneling, At the same time, we have observed the transition between two kinds of sequential resonant tunneling processes within the pressure range from 0 to 4.5 kbar, where the transition pressure between Gamma-Gamma and Gamma-X sequential resonant tunneling is P-t similar to 1.6 kbar. For P < P-t, the electric field domain is formed by Gamma-Gamma sequential resonant tunneling, while for P > P-t, the electric field domain is preferably formed by Gamma-X sequential resonant tunneling. (C) 1996 American Institute of Physics.

Defect Cluster-Induced X-Ray Diffuse Scattering in GaN Films Grown by MOCVD

High-resolution X-ray diffraction has been employed to investigate the diffuse scattering in a (0001) oriented GaN epitaxial film grown on sapphire substrate. The analysis reveals that defect clusters are present in GaN films and their concentration increases as the density of threading dislocations increases. Meanwhile, the mean radius of these defect clusters shows a reverse tendency. This result is explained by the effect of clusters preferentially forming around dislocations, which act as effective sinks for the segregation of point defects. The electric mobility is found to decrease as the cluster concentration increases.

优质应变Si_(1-x)Ge_x/Si超晶格的气源分子束处延

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