Localized Solid-State Amorphization at Grain Boundaries in a Nanocrystalline Al Solid Solution Subjected to Surface Mechanical Attrition

Using high-resolution electron microscopy, localized solid-state amorphization (SSA) was observed in a nanocrystalline (NC) Al solid solution (weight per cent 4.2 Cu, 0.3 Mn, the rest being Al) subjected to a surface mechanical attrition treatment. It was found that the deformation-induced SSA may occur at the grain boundary (GB) where either the high density dislocations or dislocation complexes are present. It is suggested that lattice instability due to elastic distortion within the dislocation core region plays a significant role in the initiation of the localized SSA at defective sites. Meanwhile, the GB of severely deformed NC grains exhibits a continuously varying atomic structure in such a way that while most of the GB is ordered but reveals corrugated configurations, localized amorphization may occur along the same GB.

Vibration of an Adhered Microbeam Under a Periodically Shaking Electrical Force

The vibration analysis of an adhered S-shaped microbeam under alternating sinusoidal voltage is presented. The shaking force is the electrical force due to the sinusoidal voltage. During vibration, both the microbeam deflection and the adhesion length keep changing. The microbeam deflection and adhesion length are numerically determined by the iteration method. As the adhesion length keeps changing, the domain of the equation of motion for the microbeam (unadhered part) changes correspondingly, which results in changes of the structure natural frequencies. For this reason, the system can never reach a steady state. The transient behaviors of the microbeam under different shaking frequencies are compared. We deliberately choose the initial conditions to compare our dynamic results with the existing static theory. The paper also analyzes the changing behavior of adhesion length during vibration and an asymmetric pattern of adhesion length change is revealed, which may be used to guide the dynamic de-adhering process. The abnormal behavior of the adhered microbeam vibrating at almost the same frequency under two quite different shaking frequencies is also shown. The Galerkin method is used to discretize the equation of motion and its convergence study is also presented. The model is only applicable in the case that the peel number is equal to 1. Some other model limitations are also discussed.

Language model combination and adaptation using weighted finite state transducers

In speech recognition systems language model (LMs) are often constructed by training and combining multiple n-gram models. They can be either used to represent different genres or tasks found in diverse text sources, or capture stochastic properties of different linguistic symbol sequences, for example, syllables and words. Unsupervised LM adaptation may also be used to further improve robustness to varying styles or tasks. When using these techniques, extensive software changes are often required. In this paper an alternative and more general approach based on weighted finite state transducers (WFSTs) is investigated for LM combination and adaptation. As it is entirely based on well-defined WFST operations, minimum change to decoding tools is needed. A wide range of LM combination configurations can be flexibly supported. An efficient on-the-fly WFST decoding algorithm is also proposed. Significant error rate gains of 7.3% relative were obtained on a state-of-the-art broadcast audio recognition task using a history dependently adapted multi-level LM modelling both syllable and word sequences. ©2010 IEEE.

Enhanced efficiency of near-UV emitting LEDs for solid-state lighting applications

The performance of a series of near-UV (∼385 nm) emitting LEDs, consisting of high efficiency InGaN/AlInGaN QWs in the active region, was investigated. Significantly reduced roll-over of efficiency at high current density was found compared to InGaN/GaN LEDs emitting at a similar wavelength. The importance of optical cavity effects in flip-chip geometry devices has also been investigated. The light output was enhanced by more than a factor of 2 when the lightemitting region was located at an anti-node position with respect to a high reflectivity current injection mirror. A power of 0.49 mW into a numerical aperture of 0.5 was obtained for a junction area of 50μm in diameter and a current of 30 mA, corresponding to a radiance of 30 W/cm2/str.

Investigation of critical state in melt processed YBa2Cu3O7-δ thick films

The magnetic moment of square planar melt processed YBa2Cu3O7-δ thick films is observed to scale with the cube of the sample width at 4.2 K, suggesting that current flow on the length scale of the film determines its magnetization at this temperature. A well-defined discontinuity in slope in the scaling data at a sample width corresponding to the average grain size (≈2 mm) implies the coexistence of distinct intra- and inter-grain critical current densities of 1.1 × 105Acm-2 and 0.4 × 105Acm-2 at 1 T and 4.2 K. The presence of a critical state in the films at 4.2T is confirmed by removing the central section from a specimen. The observed change in magnetic moment is in excellent agreement with theory for fields greater than ≈2 T. A critical state is not observed at 77 K which suggests that the grains are only weakly coupled at the higher temperature. © 1994.

Stress state in front of a crack perpendicular to bimaterial interface

Using a dislocation simulation approach, the basic equation for a crack perpendicular to a bimaterial interface is formulated in this paper. A novel expansion method is proposed for solving the problem. The complete solution for the problem, including the T stress ahead of the crack tip and the stress intensity factors are presented. The stress field characteristics are analyzed in detail. It is found that ahead of the crack tip and near the interface the normal stress, perpendicular to the crack plane, sigma(x), is characterized by the K fields and the normal stress sigma(y) is dominated by the K field plus T stress in the region of 0 < r/b < 0.4 for b/a(0) less than or equal to 0.1, where b is the distance from the crack tip to the interface.