946 resultados para Quantum Dot-sensitised Solar Cells


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Commercial aluminium foam filled structures and sandwich panels are available for structural applications. As alternative to these materials, small granular foamed pieces are proposed to fill structures as well as sandwich panels. On the present work, foam precursors are obtained by Powder Metallurgy (PM) route, using natural calcium carbonate as foaming agent instead of titanium hydride. Extruded precursor bars were cut into small pieces (around 4.5 mm long and 5mm in diameter). Foaming treatment was carried out on two different ways: electrical preheated furnace and by solar furnace. Foamed nodules presented a low cell size, density e.g. 0.67 g/cm3 to 0.88 g/cm3 and a height/diameter ratio between 0.72 and 0.84 as a function of precursor size. These properties depend on the foaming particle size, foaming cycle and precursor dimensions. Carbonate precursors are easily foamed by concentrated solar energy, due to the lower risk of cell collapse than with hydride precursors, resulting from cell stabilization by oxide skin formation into cells and a low degree of foamed nodules bonding.

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It is well known that the response of any photovoltaic solar cell is dependent on the spectral characteristics of the incident radiation. This dependency is crucial in the output characteristics of a multijunction (MJ) cell where the spectral composition of the radiation determines the overall photocurrent produced, as either the top or the middle subcell will be limiting its response. The current mismatching between top and middle subcell is translated into energy losses, affecting the yield of the system. For research and commercial purposes it is interesting to measure accurately the incident solar radiation on a MJ cell, in terms of its spectral composition. This measurement will allows us to determine the photocurrent generated in each band of the multijunction device. Nowadays, the only way of measuring the photocurrent generated by each subcell is done with isotype cells or with spectroradiometers but there is no device capable of directly measuring each subcell photocurrent. In this paper it is described a device based on a commercial multijunction solar cell that is capable of measuring the direct irradiance for the top and middle bands thus it offers information of the limiting subcell (top or middle) in outdoors conditions.

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Starting on June 2011, NGCPV is the first project funded jointly between the European Commission (EC) and the New Energy and Industrial Technology Development Organization (NEDO) of Japan to research on new generation concentration photovoltaics (CPV). The Project, through a collaborative research between seven European and nine Japanese leading research centers in the field of CPV, aims at lowering the cost of the CPVproduced photovoltaic kWh down to 5 ?cents. The main objective of the project is to improve the present concentrator cell, module and system efficiency, as well as developing advanced characterization tools for CPV components and systems. As particular targets, the project aims at achieving a cell efficiency of at least 45% and a CPV module with an efficiency greater than 35%. This paper describes the R&D activities that are being carried out within the NGCPV project and summarizes some of the most relevant results that have already been attained, for instance: the manufacturing of a 44.4% world record efficiency triple junction solar cell (by Sharp Corp.) and the installation of a 50 kWp experimental CPV plant in Spain, which will be used to obtain accurate forecasts of the energy produced at system level.

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The concept of "intermediate band solar cell" (IBSC) is, apparently, simple to grasp. However, since the idea was proposed, our understanding has improved and we feel now that we can explain better some concepts than we initially introduced. Clarifying these concepts is important, even if they are well-known for the advanced researcher, so that efforts can be driven in the right direction from start. The six pieces of this work are: Does a miniband need to be formed when the IBSC is implemented with quantum dots?; What are the problems of each of the main practical approaches that exist today? What are the simplest experimental techniques to demonstrate whether an IBSC is working as such or not? What is the issue with the absorption coefficient overlap? and Mott's transition? What the best system would be, if any?

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We present a practical implementation of a solar thermophotovoltaic (TPV) system. The system presented in this paper comprises a sunlight concentrator system, a cylindrical cup-shaped absorber/emitter (made of tungsten coated with HfO2), and an hexagonal-shaped water-cooled TPV generator comprising 24 germanium TPV cells, which is surrounding the cylindrical absorber/emitter. This paper focuses on the development of shingled TPV cell arrays, the characterization of the sunlight concentrator system, the estimation of the temperature achieved by the cylindrical emitters operated under concentrated sunlight, and the evaluation of the full system performance under real outdoor irradiance conditions. From the system characterization, we have measured short-circuit current densities up to 0.95 A/cm2, electric power densities of 67 mW/cm2, and a global conversion efficiency of about 0.8%. To our knowledge, this is the first overall solar-to-electricity efficiency reported for a complete solar thermophotovoltaic system. The very low efficiency is mainly due to the overheating of the cells (up to 120 °C) and to the high optical concentrator losses, which prevent the achievement of the optimum emitter temperature. The loss analysis shows that by improving both aspects, efficiencies above 5% could be achievable in the very short term and efficiencies above 10% could be achieved with further improvements.

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n this paper, we present a theoretical model based on the detailed balance theory of solar thermophotovoltaic systems comprising multijunction photovoltaic cells, a sunlight concentrator and spectrally selective surfaces. The full system has been defined by means of 2n + 8 variables (being n the number of sub-cells of the multijunction cell). These variables are as follows: the sunlight concentration factor, the absorber cut-off energy, the emitter-to-absorber area ratio, the emitter cut-off energy, the band-gap energy(ies) and voltage(s) of the sub-cells, the reflectivity of the cells' back-side reflector, the emitter-to-cell and cell-to-cell view factors and the emitter-to-cell area ratio. We have used this model for carrying out a multi-variable system optimization by means of a multidimensional direct-search algorithm. This analysis allows to find the set of system variables whose combined effects results in the maximum overall system efficiency. From this analysis, we have seen that multijunction cells are excellent candidates to enhance the system efficiency and the electrical power density. Particularly, multijunction cells report great benefits for systems with a notable presence of optical losses, which are unavoidable in practical systems. Also, we have seen that the use of spectrally selective absorbers, rather than black-body absorbers, allows to achieve higher system efficiencies for both lower concentration and lower emitter-to-absorber area ratio. Finally, we have seen that sun-to-electricity conversion efficiencies above 30% and electrical power densities above 50 W/cm2 are achievable for this kind of systems.

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This paper presents the theoretical analysis of a storage integrated solar thermophotovoltaic (SISTPV) system operating in steady state. These systems combine thermophotovoltaic (TPV) technology and high temperature thermal storage phase-change materials (PCM) in the same unit, providing a great potential in terms of efficiency, cost reduction and storage energy density. The main attraction in the proposed system is its simplicity and modularity compared to conventional Concentrated Solar Power (CSP) technologies. This is mainly due to the absence of moving parts. In this paper we analyze the use of Silicon as the phase change material (PCM). Silicon is an excellent candidate because of its high melting point (1680 K) and its very high latent heat of fusion of 1800 kJ/kg, which is about ten times greater than the conventional PCMs like molten salts. For a simple system configuration, we have demonstrated that overall conversion efficiencies up to ?35% are approachable. Although higher efficiencies are expected by incorporating more advanced devices like multijunction TPV cells, narrow band selective emitters or adopting near-field TPV configurations as well as by enhancing the convective/conductive heat transfer within the PCM. In this paper, we also discuss about the optimum system configurations and provide the general guidelines for designing these systems. Preliminary estimates of night time operations indicate it is possible to achieve over 10 h of operation with a relatively small quantity of Silicon.

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We proposed in our previous work V-substituted In2S3 as an intermediate band (IB) material able to enhance the efficiency of photovoltaic cells by combining two photons to achieve a higher energy electron excitation, much like natural photosynthesis. Here this hyper-doped material is tested in a photocatalytic reaction using wavelength-controlled light. The results evidence its ability to use photons with wavelengths of up to 750 nm, i.e. with energy significantly lower than the bandgap (=2.0 eV) of non-substituted In2S3, driving with them the photocatalytic reaction at rates comparable to those of non-substituted In2S3 in its photoactivity range (λ ≤ 650 nm). Photoluminescence spectra evidence that the same bandgap excitation as in V-free In2S3 occurs in V-substituted In2S3 upon illumination with photons in the same sub-bandgap energy range which is effective in photocatalysis, and its linear dependence on light intensity proves that this is not due to a nonlinear optical property. This evidences for the first time that a two-photon process can be active in photocatalysis in a single-phase material. Quantum calculations using GW-type many-body perturbation theory suggest that the new band introduced in the In2S3 gap by V insertion is located closer to the conduction band than to the valence band, so that hot carriers produced by the two-photon process would be of electron type; they also show that the absorption coefficients of both transitions involving the IB are of significant and similar magnitude. The results imply that V-substituted In2S3, besides being photocatalytically active in the whole visible light range (a property which could be used for the production of solar fuels), could make possible photovoltaic cells of improved efficiency.

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The main objective of this work is to adapt the Laser Induced Forward Techniques (LIFT), a well- known laser direct writing technique for material transfer, to define metallic contacts (fingers and busbars) onto c-Si cells. The silver paste (with viscosity around 30-50 kcPs) is applied over a glass substrate using a coater. The thickness of the paste can be control changing the deposit parameters. The glass with the silver paste is set at a controlled gap over the c-Si cell. A solid state pulsed laser (532 nm) is focused at the glass/silver interface producing a droplet of silver that it is transferred to the c-Si cell. A scanner is used to print lines. The process parameters (silver paste thickness, gap and laser parameters -spot size, pulse energy and overlapping of pulses) are modified and the morphology of the lines is studied using confocal microscopy. Long lines are printed and the uniformity (in thickness and height) is studied. Some examples of metallization of larger areas (up to 10 cm x 10 cm) are presented.

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"Work Performed Under Contract No. AC02-77CH00178."

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"Work Performed Under Contract No. AC02-77CH00178."

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"Work Performed Under Contract No. AC02-77CH00178."

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"Contract No. AC02-77CH00178."