1.4 kV, 25 A, PT and NPT Trench IGBTs with optimum forward characteristics

In this paper we report the development of 1.4 kV 25 A PT and NPT Trench IGBTs with ultra-low on-resistance, latch-up free operation and highly superior overall performance when compared to previously reported DMOS IGBTs in the same class. We have fabricated both PT and transparent anode NPT devices to cover a wide range of applications which require very low on-state losses or very fast time with ultra-low switching losses. The minimum forward voltage drop at the standard current density of 100A/cm2 was 1.1 V for PT non-irradiated devices and 2.1 V for 16 MRad PT irradiated devices. The non-irradiated transparent emitter NPT structure has a typical forward voltage drop of 2.2 V, a turn-off time below 100 ns and turn-off energy losses of 11.2 mW/cm2 at 125 C. The maximum controllable current density was in excess of 1000A/cm2.

Optimum design of 1.4KV trench IGBTs - The next generation of high power switching devices

The Trench Insulated Gate Bipolar Transistor (IGBT) is the most promising structure for the next generation of power semiconductor devices with wide applications ranging from motor control (1-4 kV) to HVDC (6.5 kV). Here we present for the first time an optimum design of a 1.4kV Trench IGBT using a new, fully integrated optimisation system comprising process and device simulators and the RSM optimiser. The use of this new TCAD system has contributed largely to realizing devices with characteristics far superior to the previous DMOS generation of IGBTs. Full experimental results on 1.4kV Trench IGBTs which are in excellent agreement with the TCAD predictions are reported.

Patterns of orographic uplift in the Sierra Nevada and their relationship to upper-level atmospheric circulation

We examine monthly and seasonal patterns of precipitation across various elevations of the eastern Central Valley of California and the Sierra Nevada. A measure of the strength of the orographic effect called the “precipitation ratio” is calculated, and we separate months into four groups based on being wet or dry and having low or high precipitation ratios. Using monthly maps of mean 700-mb height anomalies, we describe the northern hemisphere mid-tropospheric circulation patterns associated with each of the four groups. Wet months are associated with negative height anomalies over the eastern Pacific, as expected. However, the orientation of the trough is different for years with high and low precipitation ratios. Wet months with high ratios typically have circulation patterns factoring a west-southwest to east-northeast storm track from around the Hawaiian Islands to the Pacific Northwest of the United States. Wet months with low precipitation ratios are associated with a trough centered near the Aleutians and a northwest to southeast storm track. Dry months are marked by anticyclones in the Pacific, but this feature is more localized to the eastern Pacific for months with low precipitation ratios than for those with high ratios. Using precipitation gauge and snow course data from the American River and Truckee-Tahoe basins, we determined that the strength of the orographic effect on a seasonal basis is spatially coherent at low and high elevations and on opposite sides of the Sierra Nevada crestline.

Post-CMOS wafer level growth of carbon nanotubes for low-cost microsensors--a proof of concept.

Here we demonstrate a novel technique to grow carbon nanotubes (CNTs) on addressable localized areas, at wafer level, on a fully processed CMOS substrate. The CNTs were grown using tungsten micro-heaters (local growth technique) at elevated temperature on wafer scale by connecting adjacent micro-heaters through metal tracks in the scribe lane. The electrical and optical characterization show that the CNTs are identical and reproducible. We believe this wafer level integration of CNTs with CMOS circuitry enables the low-cost mass production of CNT sensors, such as chemical sensors.