星形和多嵌生物降解聚合物

本论文针对聚ε-己内酯（PCL）为代表的可生物降解脂肪族聚酷亲水性差等缺点，通过共聚反应，在聚酷中引入了亲水性的聚环氧乙烷链段（PEO），制备了具有四臂星形结构的聚己内酯一聚环氧乙烷两亲性共聚物。通过氨基酸N-拨酸配开环反应制备了含有聚氨基酸链段的两亲性三嵌段共聚物，该结构共聚物与脂肪族聚酷均聚物相比具有更好的组织相容性。本论文的创新性和主要研究结果如下：1．通过采用以二乙基锌为催化剂，季戊四醇为引发剂的引发体系，合成了具有端轻基结构的四臂星形聚ε-己内酯。聚合产物的分子量可以通过改变单体与引发剂之比进行有效的控制。通过GPC、IR、NMR等测试手段证实聚合物分子链具有星形结构。2．以四臂星形聚ε-己内酯为大分子引发剂、二乙基锌为催化剂，通过引发环氧乙烷的开环反应制备了具有星形结构的嵌段共聚物。根据各种测试分析的实验结果确定了共聚物的链结构。3．DSC和WAXD的分析表明，星形嵌段共聚物由于核心部分为PCL，其结晶能力受到了处于外部的PEO链段的限制。当PEO足够长时，将观察不到PCL段的结晶。4．运用蔡钾和乙睛为活性聚合引发体系，通过分步加入环氧乙烷和ε-己内酯两种 单体的方法合成了带有睛端基的两亲性嵌段共聚物。5．采用把／碳和Raney-Nickel混合催化体系，成功地将端睛基PCL-PEO加氢还原为端氨基共聚物。6．以端氨基PCL-PEO为大分子引发剂引发γ-苄基-L-谷氨酸NCA开环聚合制备了带有聚氨基酸醋链段的两亲性共聚物。

Resonant magnetopolaron effects due to interface phonons in GaAs/AlGaAs multiple quantum well structures

Polaron cyclotron resonance (CR) has been studied in three modulation-doped GaAs/Al0.3Ga0.7As multiple quantum well structures in magnetic field up to 30 T. Large avoided-level-crossing splittings of the CR near the GaAs reststrahlen region, and smaller splittings in the region of the AlAs-like optical phonons of th AlGaAs barriers, are observed. Based on a comparison with a detailed theoretical calculation, the high frequency splitting, the magnitude of which increases with decreasing well width, is assigned to resonant polaron interactions with AlAs-like interface phonons.

A new structure of In-based ohmic contacts to n-type GaAs

Electrical, structural and reaction characteristics of In-based ohmic contacts to n-GaAs were studied. Attempts were made to form a low-band-gap interfacial phase of InGaAs to reduce the barrier height at the metal/semiconductor junction, thus yielding low-resistance, highly reliable contacts. The contacts were fabricated by e-beam sputtering Ni, NiIn and Ge targets on VPE-grown n(+)-GaAs film (approximate to 1 mu m, 2 x 10(18) cm(-3)) in ultrahigh vacuum as the structure of Ni(200 Angstrom)/NiIn(100 Angstrom)/Ge(40 Angstrom)/n(+)-GaAs/SI-GaAs, followed by rapid thermal annealing at various temperatures (500-900 degrees C). In this structure, a very thin layer of Ge was employed to play the role of heavily doping donors and diffusion limiters between In and the GaAs substrate. Indium was deposited by sputtering NiIn alloy instead of pure In in order to ensure In atoms to be distributed uniformly in the substrate; nickel was chosen to consume the excess indium and form a high-temperature alloy of Ni3In. The lowest specific contact resistivity (rho(c)) of (1.5 +/- 0.5)x 10(-6) cm(2) measured by the Transmission Line Method (TLM) was obtained after annealing at 700 degrees C for 10 s. Auger sputtering depth profile and Transmission Electron Microscopy (TEM) were used to analyze the interfacial microstructure. By correlating the interfacial microstructure to the electronical properties, InxGa1-xAs phases with a large fractional area grown epitaxially on GaAs were found to be essential for reduction of the contact resistance.

Resonant magnetopolaron effects in GaAs/AlGaAs multiple quantum well structures

A detailed experimental study of electron cyclotron resonance (CR) has been carried out at 4.2 K in three modulation-doped GaAs/Al0.3Ga0.7As multiple quantum well samples in fields up to 30 T. A strong avoided-level-crossing splitting of the CR energies due to resonant magnetopolaron effects is observed for all samples near the GaAs reststrahlen region. Resonant splittings in the region of AlAs-like interface phonon modes of the barriers are observed in two samples with narrower well width and smaller doping concentration. The interaction between electrons and the AlAs interface optical phonon modes has been calculated for our specific sample structures in the framework of the memory-function formalism. The calculated results are in good agreement with the experimental results, which confirms our assignment of the observed splitting near the AlAs-like phonon region is due to the resonant magnetopolaron interaction of electrons in the wells with AlAs-like interface phonons. (C) 1998 Elsevier Science B.V. All rights reserved.

Diffractive microlens with a cascade focal plane fabricated by single mask UV-photolithography and common KOH:H2O etching

A diffractive microlens with a cascade focal plane along the main optical axis of the device is fabricated using a low-cost technique mainly including single mask ultraviolet (UV) photolithography and dual-step KOH:H2O etching. Based on the evolutionary behavior of converse pyramid-shaped microholes (CPSMs) preshaped over a {100}-oriented silicon wafer in KOH etchant, the first-step KOH etching is performed to transfer initial square micro-openings in a SiO2 film grown by plasma enhanced chemical vapor deposition (PECVD) and patterned by single mask UV-photolithography, into CPSMs with needed dimension. After completely removing a thinned SiO2 mask, basic annular phase steps with a relatively steep sidewall and scheduled height can be shaped in the overlapped etching region between the neighboring silicon concave-arc microstructures evolved from CPSMs through the second-step KOH etching. Morphological measurements demonstrate a desirable surface of the silicon microlens with a roughness in nanometer scale and the feature height of the phase steps formed in the submicrometer range. Conventional optics measurements of the plastic diffractive microlens obtained by further hot embossing the fine microrelief phase map over the nickel mask made through a common electrochemical method indicate a highly efficient cascaded focusing performance.

The main factor influencing the tensile properties of surface nano-crystallized graded materials

The improved mechanical properties of surface nano-crystallized graded materials produced by surface severe plastic deformation ((SPD)-P-2) are generally owing to the effects of the refined structure, work-hardened region and compressive residual stress. However, during the (SPD)-P-2 process, residual stress is produced simultaneously with work-hardened region, the individual contribution of these two factors to the improved mechanical properties remains unclear. Numerical simulations are carried out in order to answer this question. It is found that work hardening predominates in improving the yield strength and the ultimate tensile strength of the surface nano-crystallized graded materials, while the influence of the residual stress mainly emerges at the initial stage of deformation and decreases the apparent elastic modulus of the surface nano-crystallized graded materials, which agrees well with the experimental results. (C) 2010 Elsevier B.V. All rights reserved.

一种镍基单晶合金的凝固行为

采用等温凝固方法研究了单晶镍基合金的凝固区间,利用DSC测试了合金的凝固曲线.结果表明:实验合金的液相线温度约为1380℃,固相线温度约为1310℃.合金的凝固顺序为: Lγ,L MC;γγ′;Lγ+MC.单晶合金的铸态组织中,W偏析于枝晶干, Ti,Cr,Mo和Ta偏析于枝晶间,偏析程度为: Mo>Ti>Cr>Ta, Al和Co几乎不发生偏析.1314℃1382℃1361℃1325℃