Tsunami wave runup on the clustered islands using boussinesq-type model

This paper describes the implementation of the Boussinesq-type model and extends its application to the tsunami wave runup on the clustered islands (multiple adjacent conical islands), in turn, an extensively validated two-dimensional Boussinesq-type model is employed to examine the interaction between a propagating solitary wave and multiple idealised conical islands, with particular emphasis on a combination effect of two adjustable parameters for spacing interval/diameter ratio between the adjacent conical islands, S/D, and the rotating angle of the structural configuration,θ on maximum soliton runup heights. An extensive parameter study concerning the combination effect of alteringθ and S/D on the maximum soliton runup with the multi-conical islands is subsequently carried out and the distributions of the maximum runup heights on each conical island are obtained and compared for the twin-island cases. The worst case study is performed for each case in respect of the enhancement in the maximum wave runup heights by the multi-conical islands. It is found that the nonlinear wave diffraction, reflection and refraction play a significant role in varying the maximum soliton runup heights on multiconical islands. The comparatively large maximum soliton runups are generally predicted for the merged and bottom mounted clusteredislands. Furthermore, the joints of the clustered-merged islands are demonstrated to suffer the most of the tsunami wave attack. The conical islands that position in the shadow regions behind the surrounding islands are found to withstand relatively less extreme wave impact. Although, these numerical investigations are considerable simplifications of the multi conical islands, they give a critical insight into certain important hydrodynamic characteristics of the interaction between an extreme wave event and a group of clustered conical islands, and thus providing a useful engineering guidance for extreme wave mitigation and coastal development. Copyright © 2012 by the International Society of Offshore and Polar Engineers (ISOPE).

Attenuated Salmonella Typhimurium lacking the pathogenicity island-2 type 3 secretion system grow to high bacterial numbers inside phagocytes in mice.

Intracellular replication within specialized vacuoles and cell-to-cell spread in the tissue are essential for the virulence of Salmonella enterica. By observing infection dynamics at the single-cell level in vivo, we have discovered that the Salmonella pathogenicity island 2 (SPI-2) type 3 secretory system (T3SS) is dispensable for growth to high intracellular densities. This challenges the concept that intracellular replication absolutely requires proteins delivered by SPI-2 T3SS, which has been derived largely by inference from in vitro cell experiments and from unrefined measurement of net growth in mouse organs. Furthermore, we infer from our data that the SPI-2 T3SS mediates exit from infected cells, with consequent formation of new infection foci resulting in bacterial spread in the tissues. This suggests a new role for SPI-2 in vivo as a mediator of bacterial spread in the body. In addition, we demonstrate that very similar net growth rates of attenuated salmonellae in organs can be derived from very different underlying intracellular growth dynamics.

1.4ps superradiant pulses from a GaN-based laser

The generation of picosecond superradiant pulses from 408nm a GaN/InGaN laser diode is demonstrated for the first time. Pulses with peak powers above 2.8W, pulse energy of 57pJ and durations of 1.4ps are generated. © 2012 OSA.

Design consideration of a circular type magnetic flux pump device

As a variation of the thermally actuated flux pump and the linear type magnetic flux pump (LTMFP), the circular type magnetic flux pump (CTMFP) device is proposed to magnetize a circular shape type-II superconducting thin film and bulk. The basic concept is the same as the thermally actuated flux pump: a circularly symmetric traveling magnetic field is generated below a circular shape superconductor to increase its trapping field. However, this traveling field is created by the three phase windings instead of heating gadolinium block. Apart from the LTMFP, the three phase windings are wound concentrically instead of linearly. The speed of the traveling field is controlled by the AC frequency and the magnitude of the field is controlled by the magnitudes of AC currents. In addition, a coil with DC current is wound around the three phase windings to provide a background field. The concept design is presented in this paper. The magnetic waveforms are analysed numerically by the COMSOL 3.5a software. The impedances of the three phase windings are calculated and a corresponding circuit design is presented. This rig can be used as an advanced tool to study the flux pump behavior of a circular shape superconductor. © 2002-2011 IEEE.

DNS of EGR-type turbulent flame in MILD condition

Three-dimensional direct numerical simulation (DNS) of exhaust gas recirculation (EGR)-type turbulent combustion operated in moderate and intense low-oxygen dilution (MILD) condition has been carried out to study the flame structure and flame interaction. In order to achieve adequate EGR-type initial/inlet mixture fields, partially premixed mixture fields which are correlated with the turbulence are carefully preprocessed. The chemical kinetics is modelled using a skeletal mechanism for methane-air combustion. The results suggest that the flame fronts have thin flame structure and the direct link between the mean reaction rate and scalar dissipation rate remains valid in the EGR-type combustion with MILD condition. However, the commonly used canonical flamelet is not fully representative for MILD combustion. During the flame-flame interactions, the heat release rate increases higher than the maximum laminar flame value, while the gradient of progress variable becomes smaller than laminar value. It is also proposed that the reaction rate and the scalar gradient can be used as a marker for the flame interaction. © 2012 The Combustion Institute. Published by Elsevier Inc. All rights reserved.

Properties of trench defects in InGaN/GaN quantum well structures

The structural and optical properties of trench defects, which are poorly understood yet commonly occurring defects observed on the surfaces of InGaN multiple quantum wells (MQW), are reported. These defects comprise near-circular trenches which enclose areas of MQW which give rise to a red shift in peak photoluminescence emission and a change in cathodoluminescence intensity with respect to the surrounding material. Atomic force microscopy shows that the height of trench-enclosed areas differs from that of the surrounding quantum well structure, and that trenches are unrelated to the commonly observed V-defects in InGaN films, despite being occasionally intersected by them. Cross-sectional electron microscopy analysis of trenches with raised centres suggests that the red shift in the observed cathodoluminescence peak emission may be due to the quantum wells being thicker in the trench-enclosed regions than in the surrounding quantum well area. The mechanism of trench formation and its implication for the control of the emission properties of light-emitting diodes is discussed. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Modelling 2DEG charges in AlGaN/GaN heterostructures

In this paper we compare different approaches to calculating the charge density in the 2DEG layer of AlGaN/GaN HEMTs. The methods used are (i) analytical theory implemented in MATLAB, (ii) finite-element analysis using semiconductor TCAD software that implements only the Poisson and continuity equations, and (iii) 1D software that solves the Poisson and Schrödinger equations self-consistently. By using the 1D Poisson-Schrödinger solver, we highlight the consequences of neglecting the Schrödinger equation. We conclude that the TCAD simulator predicts with a reasonable level of accuracy the electron density in the 2DEG layer for both a conventional HEMT structure and one featuring an extra GaN cap layer. In addition, while the sheet charge density is not significantly affected by including Schrödinger, its confinement in the channel is found to be modified. © 2012 IEEE.

The investigation of sweeping speed on the magnetization of a 2 inches diameter YBa2Cu3O7-δ thin film with the circular-type magnetic flux pump

A circular-type magnetic flux pump (CTMFP) device was built to study the flux dynamics on a 2-inch-diameter YBCO thin film. This CTMFP is composed of two CTMFP coils, with each CTMFP coil containing concentric three-phase windings and a dc winding. We connected the three-phase windings to the output of a commercial inverter. By changing the output frequency of the inverter, the sweeping speed of the circular-shaped travelling magnetic wave can be changed. The connection of the phase coils follows the forward consequence, so that the circular-shaped travelling magnetic wave travels inward to the center. The output frequency f was changed from f = 0.01 to 1000.0 Hz. The YBCO sample was sandwiched between the two CTMFP coils to experience the circular-shaped travelling magnetic wave. It was found that the increase of the flux density in the center of the film is independent of the sweeping frequency. In high frequency f = 1000.0Hz, even if the waveform had changed a lot, the increment is still the same as in low frequencies. © 2012 IEEE.

Three dimensional distributions of arsenic and platinum within NiSi contact and gate of an n-type transistor

Atom probe tomography was used to study the redistribution of platinum and arsenic atoms after Ni(Pt) silicidation of As-doped polycrystalline Si. These measurements were performed on a field-effect transistor and compared with those obtained in unpatterned region submitted to the same process. These results suggest that Pt and As redistribution during silicide formation is only marginally influenced by the confinement in microelectronic devices. On the contrary, there is a clear difference with the redistribution reported in the literature for the blanket wafers. Selective etching used to remove the non-reacted Ni(Pt) film after the first rapid heat treatment may induce this difference. © 2011 American Institute of Physics.

Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells

Atomic force microscopy (AFM) and scanning electron microscopy (SEM) with cathodoluminescence (CL) were performed on exactly the same defects in a blue-emitting InGaN/GaN multiple quantum well (QW) sample enabling the direct correlation of the morphology of an individual defect with its emission properties. The defects in question are observed in AFM and SEM as a trench partially or fully enclosing a region of the QW having altered emission properties. Their sub-surface structure has previously been shown to consist of a basal plane stacking fault (BSF) in the plane of the QW stack, and a stacking mismatch boundary (SMB) which opens up into a trench at the sample surface. In CL, the material enclosed by the trench may emit more or less intensely than the surrounding material, but always exhibits a redshift relative to the surrounding material. A strong correlation exists between the width of the trench and both the redshift and the intensity ratio, with the widest trenches surrounding regions which exhibit the brightest and most redshifted emission. Based on studies of the evolution of the trench width with the number of QWs from four additional MQW samples, we conclude that in order for a trench defect to emit intense, strongly redshifted light, the BSF must be formed in the early stages of the growth of the QW stack. The data suggest that the SMB may act as a non-radiative recombination center. © 2013 American Institute of Physics.