Fast imaging of laser-blow-off plume:Lateral confinement in ambient environment

The dynamics of plasma plume, formed by the laser-blow-off of multicomponent LiF-C thin film under various ambient pressures ranging from high vacuum to argon pressure of 3 Torr, has been studied using fast imaging technique. In vacuum, the plume has ellipsoidal shape. With the increase in the ambient pressure, sharp plume boundary is developed showing a focusing-like confinement in the lateral space behavior in the front end, which persists for long times. At higher ambient pressure (> 10−1 Torr ), structures are developed in the plasma plume due to hydrodynamic instability/turbulences.

Amorphous Oxide Transparent Thin Films: Growth, Characterisation and Application to Thin Film Transistors

This work mainly concentrate to understand the optical and electrical properties of amorphous zinc tin oxide and amorphous zinc indium tin oxide thin films for TFT applications. Amorphous materials are promising in achieving better device performance on temperature sensitive substrates compared to polycrystalline materials. Most of these amorphous oxides are multicomponent and as such there exists the need for an optimized chemical composition. For this we have to make individual targets with required chemical composition to use it in conventional thin film deposition techniques like PLD and sputtering. Instead, if we use separate targets for each of the cationic element and if separately control the power during the simultaneous sputtering process, then we can change the chemical composition by simply adjusting the sputtering power. This is what is done in co-sputtering technique. Eventhough there had some reports about thin film deposition using this technique, there was no reports about the use of this technique in TFT fabrication until very recent time. Hence in this work, co-sputtering has performed as a major technique for thin film deposition and TFT fabrication. PLD were also performed as it is a relatively new technique and allows the use high oxygen pressure during deposition. This helps to control the carrier density in the channel and also favours the smooth film surface. Both these properties are crucial in TFT.Zinc tin oxide material is interesting in the sense that it does not contain costly indium. Eventhough some works were already reported in ZTO based TFTs, there was no systematic study about ZTO thin film's various optoelectronic properties from a TFT manufacturing perspective. Attempts have made to analyse the ZTO films prepared by PLD and co-sputtering. As more type of cations present in the film, chances are high to form an amorphous phase. Zinc indium tin oxide is studied as a multicomponent oxide material suitable for TFT fabrication.

Metastable States and Irregular Behaviour in a Josephson Junction with Nonlinear Resistance

We consider a resistively shunted Josephson junction with a resistance that depends inversely on voltage. It is shown that such a junction in the underdamped case can give rise to extremely long-lived metastable states even in the absence of external noise. We investigate numerically this metastable state and its transition to a chaotic state. The junction voltages corresponding to these states are studied.

Creation and Annihilation of Fluxons in ac‐driven Semi-annular Josephson Junction

A new geometry (semiannular) for Josephson junction has been proposed and theoretical studies have shown that the new geometry is useful for electronic applications [1, 2]. In this work we study the voltage‐current response of the junction with a periodic modulation. The fluxon experiences an oscillating potential in the presence of the ac‐bias which increases the depinning current value. We show that in a system with periodic boundary conditions, average progressive motion of fluxon commences after the amplitude of the ac drive exceeds a certain threshold value. The analytic studies are justified by simulating the equation using finite‐difference method. We observe creation and annihilation of fluxons in semiannular Josephson junction with an ac‐bias in the presence of an external magnetic field.

Organic field-effect transistors and phototransistors based on amorphous materials

A comparison between the charge transport properties in low molecular amorphous thin films of spiro-linked compound and their corresponding parent compound has been demonstrated. The field-effect transistor method is used for extracting physical parameters such as field-effect mobility of charge carriers, ON/OFF ratios, and stability. In addition, phototransistors have been fabricated and demonstrated for the first time by using organic materials. In this case, asymmetrically spiro-linked compounds are used as active materials. The active materials used in this study can be divided into three classes, namely Spiro-linked compounds (symmetrically spiro-linked compounds), the corresponding parent-compounds, and photosensitive spiro-linked compounds (asymmetrically spiro-linked com-pounds). Some of symmetrically spiro-linked compounds used in this study were 2,2',7,7'-Tetrakis-(di-phenylamino)-9,9'-spirobifluorene (Spiro-TAD),2,2',7,7'-Tetrakis-(N,N'-di-p-methylphenylamino)-9,9'-spirobifluorene (Spiro-TTB), 2,2',7,7'-Tetra-(m-tolyl-phenylamino)-9,9'-spirobifluorene (Spiro-TPD), and 2,2Ž,7,7Ž-Tetra-(N-phenyl-1-naphtylamine)-9,9Ž-spirobifluorene (Spiro alpha-NPB). Related parent compounds of the symmetrically spiro-linked compound used in this study were N,N,N',N'-Tetraphenylbenzidine (TAD), N,N,N',N'-Tetrakis(4-methylphenyl)benzidine (TTB), N,N'-Bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD), and N,N'-Diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (alpha-NPB). The photosensitive asymmetrically spiro-linked compounds used in this study were 2,7-bis-(N,N'-diphenylamino)-2',7'-bis(biphenyl-4-yl)-9,9'-spirobifluorene (Spiro-DPSP), and 2,7-bis-(N,N'-diphenylamino)-2',7'-bis(spirobifluorene-2-yl)-9,9'-spirobifluorene (Spiro-DPSP^2). It was found that the field-effect mobilities of charge carriers in thin films of symmetrically spiro-linked compounds and their corresponding parent compounds are in the same order of magnitude (~10^-5 cm^2/Vs). However, the thin films of the parent compounds were easily crystallized after the samples have been exposed in ambient atmosphere and at room temperature for three days. In contrast, the thin films and the transistor characteristics of symmetrically spiro-linked compound did not change significantly after the samples have been stored in ambient atmosphere and at room temperature for several months. Furthermore, temperature dependence of the mobility was analyzed in two models, namely the Arrhenius model and the Gaussian Disorder model. The Arrhenius model tends to give a high value of the prefactor mobility. However, it is difficult to distinguish whether the temperature behaviors of the material under consideration follows the Arrhenius model or the Gaussian Disorder model due to the narrow accessible range of the temperatures. For the first time, phototransistors have been fabricated and demonstrated by using organic materials. In this case, asymmetrically spiro-linked compounds are used as active materials. Intramolecular charge transfer between a bis(diphenylamino)biphenyl unit and a sexiphenyl unit leads to an increase in charge carrier density, providing the amplification effect. The operational responsivity of better than 1 A/W can be obtained for ultraviolet light at 370 nm, making the device interesting for sensor applications. This result offers a new potential application of organic thin film phototransistors as low-light level and low-cost visible blind ultraviolet photodetectors.

Lateral spreading in basal reinforced embankments supported by pile-like elements

Bei Dämmen auf wenig tragfähigem Untergrund ist es zwischenzeitlich Stand der Technik, an der Dammbasis eine Bewehrung aus hochzugfesten Geokunststoffen (Gewebe oder Geogitter) einzulegen. Dabei können die Bewehrungslagen direkt auf den weichen Boden oder über Pfahlelementen angeordnet werden, die die Dammlasten in tiefere, tragfähigere Schichten abtragen. Die horizontale Bewehrung an der Dammbasis hat die Aufgabe, die vertikalen Dammlasten und die nach außen wirkenden Spreizkräfte aufzunehmen. Dies ist besonders für bewehrte Tragschichten über Pfählen von großer Bedeutung, da sonst die Pfähle/Säulen eine Biegebeanspruchung erhalten, die sie aufgrund des geringen Durchmessers (oftmals unbewehrt) nicht aufnehmen können. Abgesicherte wissenschaftliche Erkenntnisse über Größe und Verteilung der Spreizspannung in Höhe ober- und unterhalb der Bewehrungslagen liegen derzeit noch nicht vor, aus denen dann auch die Beanspruchung abzuleiten ist, die aus der Spreizwirkung bei der Geokunststoffbemessung zu berücksichtigen ist. Herr Dr.-Ing. Gourge Fahmi hat dafür zunächst den Kenntnisstand zur Spreizbeanspruchung ohne und mit Bewehrung sowie ohne und mit Pfahlelementen zusammengefasst. Ein wesentlicher Teil einer wissenschaftlichen Untersuchungen stellt die Modellversuche in einem relativ großen Maßstab dar, die u. a. auch zur Validierung von numerischen Berechnungen zur Fragestellung vorgesehen waren. Dabei konnte nach gewissen Parameteranpassungen überwiegend eine gute Übereinstimmung zwischen Modellversuchen und FEM-Berechnungen erreicht werden. Lediglich bei den Dehnungen bzw. Zugkräften in den Geogittern über Pfahlelementen ergab die FEM bei dem verwendeten Programmsystem viel zu niedrige Werte. Es wurde dazu in der Arbeit anhand eigener Untersuchungen und Vergleichsergebnissen aus der Literatur eine Hypothese formuliert und zunächst die Berechnungsergebnisse mit einem Faktor angepasst. Mit den durchgeführten Verifikationen stand damit dann ein weitestgehend abgesichertes numerisches Berechnungsmodell zur Verfügung. Aufbauend auf diesen Vorarbeiten konnten Parameterstudien mit numerischen und analytischen Methoden zur Spreizproblematik durchgeführt werden. Dabei wurden die Randbedingungen und Parametervariationen sinnvoll und für die Fragestellung zutreffend gewählt. Die numerischen Verfahren ergaben vertiefte Erkenntnisse zur Mechanik und zum Verhalten der Konstruktion. Die analytischen Vergleichsberechnungen validierten primär die Güte dieser vereinfachten Ansätze für praktische Berechnungen. Zusammenfassend wurde festgestellt, dass erwartungsgemäß die Spreizkräfte im Geogitter nahezu linear mit der Dammhöhe anwachsen. Von besonderer Bedeutung für die Größe der Spreizkräfte ist die Steifigkeit der Weichschichten. Dieser Parameter wird bei den bisher bekannten analytischen Berechnungsverfahren nicht berücksichtigt. Je weicher der Untergrund, je größer wird das Verhältnis zwischen Spreiz- und Membranbeanspruchung. Eine steilere Dammböschung hat erwartungsgemäß ebenfalls eine höhere Spreizwirkung zur Folge. Des Weiteren ergeben sich bei mehrlagigen Geogittern die höheren Beanspruchungen in der unteren Lage aus dem Membraneffekt und in der oberen Lage aus dem Spreizeffekt. Zu diesen Erkenntnissen wurden in der Arbeit erste Vorschläge für die praktischen Bemessungen gemacht, die aber noch weiter zu optimieren sind. Schließlich erfolgt von Herrn Fahmi eine Betrachtung der Pfahlelementbeanspruchung aus Pfahlkopfverschiebung und Biegemomenten. Dabei wurde ersichtlich, dass die Pfahlelemente bei hohen Dämmen erhebliche Beanspruchungen erhalten können, wenn relativ weicher Untergrund vorhanden ist, und es zeigt die Notwendigkeit entsprechend abgesicherter Bemessungsverfahren auf.

Photophysical Properties of Bipolar Substituted Spirobifluorenes

Die Arbeit enthält Untersuchungen an bipolar substituierten Spirobifluorenderivaten mittels stationärer und zeitaufgelöster Fluoreszenz- und Phosphoreszenzspektrokopie und elektrochemischer Analysemethoden.

THz Plasma Waves in Field-Effect-Transistors: A Monte Carlo Study

Sensing with electromagnetic waves having frequencies in the Terahertz-range is a very attractive investigative method with applications in fundamental research and industrial settings. Up to now, a lot of sources and detectors are available. However, most of these systems are bulky and have to be used in controllable environments such as laboratories. In 1993 Dyakonov and Shur suggested that plasma waves developing in field-effect-transistors can be used to emit and detect THz-radiation. Later on, it was shown that these plasma waves lead to rectification and allows for building efficient detectors. In contrast to the prediction that these plasma waves lead to new promising solid-state sources, only a few weak sources are known up to now. This work studies THz plasma waves in semiconductor devices using the Monte Carlo method in order to resolve this issue. A fast Monte Carlo solver was developed implementing a nonparabolic bandstructure representation of the used semiconductors. By investigating simplified field-effect-transistors it was found that the plasma frequency follows under equilibrium conditions the analytical predictions. However, no current oscillations were found at room temperature or with a current flowing in the channel. For more complex structures, consisting of ungated and gated regions, it was found that the plasma frequency does not follow the value predicted by the dispersion relation of the gated nor the ungated device.

Prevalencia y factores asociados a la no adherencia en el tratamiento farmacológico de mantenimiento en adultos con trastorno afectivo bipolar

La prevalencia de no adherencia en el tratamiento de mantenimiento en el Trastorno Afectivo Bipolar esta en los rangos de 20% y un 60%, interviniendo diversos factores relacionados con el paciente, la enfermedad, el tratamiento, y la relación con el terapeuta, asociándose a una mayor morbilidad, mortalidad y riesgo de reingresos hospitalarios. Objetivos: Determinar la prevalencia y factores asociados a la no adherencia en tratamiento de mantenimiento de pacientes adultos con diagnóstico de trastorno afectivo bipolar. Métodos: Estudio de corte transversal incluyo 124 paciente que asistieron a consulta los meses de noviembre y diciembre , se aplicó cuestionario estructurado, que contenía las variables de factores asociados, demográficos, relacionadas con el paciente, con la enfermedad, el tratamiento, relación terapéutica y el sistema de salud, relacionados con la familia; la Escala de Impresión Global Para el Trastorno Bipolar Modificado (CGI – BPM -M) y apgar familiar Resultados: La prevalencia de no adherencia al tratamiento farmacológico de mantenimiento fue del 29.8%. Siendo esta mayor para las mujeres (64.9%) que para los hombres (35.1%), aunque esta diferencia no fue estadísticamente significativa (p= 0.17). Los factores asociados que estadísticamente significativos fueron mayor gravedad de la enfermedad OR 1.9 , antecedente de no adherencia (38% P=0.001), percepción negativa del terapeuta, menor insight( 87% RP4.65), mayor estigma(50% RP 6.2), no tener familiar que le recuerde toma del medicamento(73%). Conclusiones: La prevalencia estuvo en el rango de otros estudios realizados por Scott, Vieta et al, los factores asociados como estigma, antecedente de no adherencia, no tener apoyo familiar, un insight pobre y el habito de fumar ,pueden ser identificados desde el abordaje del paciente y modificados para mejorar la adherencia terapéutica

Mental Health: Bipolar

Interactive guided learning material for clinical year students; core concepts on bipolar

Abstraction: From Transistors to Computers and from Bits to Programs

Takes the Tanenbaum (Structured Computer Organisation) approach to show how application of successive levels of abstraction allow us to understand how computers are made from transitors and how they are programmed.

Diferencias en la experiencia subjetiva entre depresión unipolar y bipolar

En la depresión unipolar el estado de ánimo predominante es la tristeza y la experiencia corporal es de un cuerpo que se siente más cómodo con la quietud que con la actividad, parecido a la pereza de la vida cotidiana. En la depresión bipolar el estado de ánimo predominante es de apagamiento emocional. La experiencia corporal es de un cuerpo pesado, cansado, un elemento que se interpone entre los deseos de actuar y la realización de las acciones y que se vuelve un obstáculo para el movimiento. Además, en la depresión bipolar hay mayor bradipsíquia, dificultad para concentrarse y desesperanza que en la unipolar. Se realizó una investigación de tipo cualitativo, exploratorio, de las experiencias subjetivas (de primera persona) de un grupo de pacientes con depresión unipolar y bipolar. Se utilizó entrevistas en profundidad de orientación fenomenológica.

Characterisation of low temperature and semi-insulating GaAs lateral photo-Dember THz Emitters

Poster for IRMMW-THz conference in Mainz, Germany 2013

Efectividad de la ketamina en depresión bipolar: revisión sistemática de la literatura

Introducción: Aunque el hallazgo clínico más distintivo del Trastorno Afectivo Bipolar es el ánimo patológicamente elevado, este no suele ser el estado de ánimo prevalente de la enfermedad. La fase depresiva del trastorno o depresión bipolar es más crónica, conlleva a un mayor deterioro de la funcionalidad y representa un reto terapéutico habitual. En la actualidad, el manejo farmacológico de la depresión bipolar suele consistir en combinaciones de al menos dos medicamentos distintos, incluyendo estabilizadores del afecto (litio y anticonvulsivantes), antipsicóticos atípicos y antidepresivos. El objetivo central de este trabajo es evaluar la efectividad de la Ketamina en la depresión bipolar. Métodos: Revisión sistemática de la literatura de artículos que proporcionen información sobre la eficacia de la Ketamina en la fase depresiva del Trastorno Bipolar. Resultados: De los 147 artículos arrojados por la búsqueda, dos cumplieron los criterios de selección (n=33). En comparación con placebo, ketamina tiene un efecto antidepresivo rápido y duradero, incluso en pacientes que han recibido más de 3 medicamentos previamente. No se reportaron efectos adversos severos durante los estudios. Discusión. La evidencia actual apunta a que la ketamina es útil para el manejo de la depresión bipolar, incluso cuando es resistente al tratamiento, es segura y puede tener cierto efecto antisuicida. Es necesario ampliar la evidencia existente.