Growth, osmoregulation and ion accumulation in the coastal halophyte Arthrocnemum indicum under field conditions

Life cycle and population biology of a perennial halophyte Arthrocnemum indicum Willd, was studied from February 1992 to January 1993. During the 12 months, the population was exposed to great variations in soil salinity from 35 to 58 ms/cm2 and soil moisture ranging from flood to drought levels. Seasonal changes in dry weight are directly related to soil salinity stress. When salinity levels become low, the dry matter production increases. A little increase in dry weight from April to July indicates that more negative soil water potentials were limiting plant growth. Proline content increased considerably during the dry season with a corresponding increase in salinity. Water soluble oxalate did not vary much with changes in salinity.

TIME RESOLVED REFLECTIVITY MEASUREMENTS APPLIED TO RAPID ISOTHERMAL ANNEALING OF ION IMPLANTED SILICON.

The annealing of ion implantation damage in silicon by rapid isothermal heating has been monitored by the time resolved reflectivity (TRR) method. This technique was applied simultaneously at a wavelength of 632. 8nm and also at 1152nm, where the optical absorption coefficient of silicon is less. The two wavelength method simplifies the interpretation of TRR results, extends the measurement depth and allows good resolution of the position of the interface between amorphous and crystalline silicon. The regrowth of amorphous layers in silicon, created by self implantation and implanted with electrically active impurities, was observed. Regrowth in rapid isothermal annealing occurs during the heating up stage of typical thermal cycles. Impurities such as B, P, and As increase the regrowth rate in a manner consistent with a vacancy model for regrowth. The maximum regrowth rate in boron implanted silicon is limited by the solid solubility.

First demonstration of two photon absorption in a semiconductor waveguide pumped by a diode laser

For the first time, lasers have been used to induce a fast all-optical nonresonant nonlinearity at wavelengths well beyond the band edge in a GaAs/GaAlAs multiquantum well waveguide. Using a Q-switched diode laser, which gave optical pulses of 3.5 ps duration and 7 W peak power, an intensity-dependent transmission was recorded that was consistent with the presence of two photon absorption in the waveguide. The measured two photon absorption coefficient was 11 ± 2cm/GW.

Optimization of semiconductor optical amplifiers for all optical wavelength conversion

In recent years a variety of experimental and theoretical work has been reported on the use of semiconductor optical amplifiers for high speed wavelength conversion. However little work has addressed the dynamic limitations of this conversion process in detail with a view to device optimization. In this paper, a detailed study of the conversion process is carried out in order to optimize device parameters and drive conditions for increased conversion speed and improved modulation index.

High-speed wavelength conversion utilizing birefringence in semiconductor optical amplifiers

This paper describes a novel technique whereby a mixture of cross-phase and cross-gain modulation effects in an SOA causes polarization rotation of a cw probe beam in the presence of a signal pulse, enabling the transmission of the probe through a polarizer to be controlled. The benefits of this approach are: 1) Very high extinction ratios present in the wavelength converted signal (>30 achieved); 2) A non-inverted wavelength converted signal, which is advantageous for chirp-compensation;2 3) A simple and stable experimental set-up, 4) Converted pulses which can be shaped to be faster than the input pulses.

Chirp limitation on high-speed wavelength conversion using semiconductor optical amplifiers

The cross-gain-saturation effect in SOAs, has been shown to enable robust high-speed wavelength conversion. Under strong electrical and optical pumping, conversion speeds in excess of 20 Gbit/s have been illustrated. However, the effect of chirp on transmission distance at such ultrahigh bit rates has not been studied theoretically in detail. This paper considers the chirp introduced on conversion, employing cross-gain saturation, and studies its dependence on amplifier drive current and signal power. It further shows how an increase in injected cw optical power can reduce chirp while improving conversion speed.

Numerical modelling of dynamic response of loss modulated monolithic multisection mode-locked semiconductor lasers

Monolithic multisection mode-locked semiconductor lasers with an integrated distributed Bragg reflector (DBR) have recently been demonstrated to generate stable picosecond pulses at high repetition rates suitable for optical communication systems. However, there has been very little theoretical work on understanding the physical mechanisms of the device and on optimisation of the absorber modulator design. This article presents numerical modeling of the loss modulated mode-locking process in these lasers. The model predicts most aspects experimentally observed within this type of device, and the results show the output waveform, optical spectrum, instantaneous frequency chirp, and stable operating range.