Si(100) versus Ge(100): Watching the interface formation for the growth of III-V-based solar cells on abundant substrates

We investigated the atomic surface properties of differently prepared silicon and germanium (100) surfaces during metal-organic vapour phase epitaxy/chemical vapour deposition (MOVPE/MOCVD), in particular the impact of the MOVPE ambient, and applied reflectance anisotropy/difference spectroscopy (RAS/RDS) in our MOVPE reactor to in-situ watch and control the preparation on the atomic length scale for subsequent III-V-nucleation. The technological interest in the predominant opto-electronic properties of III-V-compounds drives the research for their heteroepitaxial integration on more abundant and cheaper standard substrates such as Si(100) or Ge(100). In these cases, a general task must be accomplished successfully, i.e. the growth of polar materials on non-polar substrates and, beyond that, very specific variations such as the individual interface formation and the atomic step structure, have to be controlled. Above all, the method of choice to grow industrial relevant high-performance device structures is MOVPE, not normally compatible with surface and interface sensitive characterization tools, which are commonly based on ultrahigh vacuum (UHV) ambients. A dedicated sample transfer system from MOVPE environment to UHV enabled us to benchmark the optical in-situ spectra with results from various surfaces science instruments without considering disruptive contaminants. X-ray photoelectron spectroscopy (XPS) provided direct observation of different terminations such as arsenic and phosphorous and verified oxide removal under various specific process parameters. Absorption lines in Fourier-transform infrared (FTIR) spectra were used to identify specific stretch modes of coupled hydrides and the polarization dependence of the anti-symmetric stretch modes distinguished different dimer orientations. Scanning tunnelling microscopy (STM) studied the atomic arrangement of dimers and steps and tip-induced H-desorption proved the saturation of dangling bonds after preparati- n. In-situ RAS was employed to display details transiently such as the presence of H on the surface at lower temperatures (T <; 800°C) and the absence of Si-H bonds at elevated annealing temperature and also surface terminations. Ge buffer growth by the use of GeH4 enables the preparation of smooth surfaces and leads to a more pronounced amplitude of the features in the spectra which indicates improvements of the surface quality.

Optimizing Bottom Subcells for III-V-on-Si MultiJunction Solar Cells

Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on silicon for photovoltaic applications. Such integration would offer a cost breakthrough for photovoltaic technology, unifying the low cost of silicon and the efficiency potential of III-V multijunction solar cells. In this study, we analyze several factors influencing the performance of the bottom subcell of this dual-junction, namely, 1) the formation of the emitter as a result of the phosphorus diffusion that takes place during the prenucleation temperature ramp and during the growth of the III-V layers; 2) the degradation in surface morphology during diffusion; and 3) the quality needed for the passivation provided by the GaP layer on the emitter.

Internal quantum efficiency of III-nitride quantum dot superlattices grown by plasma-assisted molecular-beam epitaxy

We present a study of the optical properties of GaN/AlN and InGaN/GaN quantum dot (QD) superlattices grown via plasma-assisted molecular-beam epitaxy, as compared to their quantum well (QW) counterparts. The three-dimensional/two-dimensional nature of the structures has been verified using atomic force microscopy and transmission electron microscopy. The QD superlattices present higher internal quantum efficiency as compared to the respective QWs as a result of the three-dimensional carrier localization in the islands. In the QW samples, photoluminescence (PL) measurements point out a certain degree of carrier localization due to structural defects or thickness fluctuations, which is more pronounced in InGaN/GaN QWs due to alloy inhomogeneity. In the case of the QD stacks, carrier localization on potential fluctuations with a spatial extension smaller than the QD size is observed only for the InGaN QD-sample with the highest In content (peak emission around 2.76 eV). These results confirm the efficiency of the QD three-dimensional confinement in circumventing the potential fluctuations related to structural defects or alloy inhomogeneity. PL excitation measurements demonstrate efficient carrier transfer from the wetting layer to the QDs in the GaN/AlN system, even for low QD densities (~1010 cm-3). In the case of InGaN/GaN QDs, transport losses in the GaN barriers cannot be discarded, but an upper limit to these losses of 15% is deduced from PL measurements as a function of the excitation wavelength.

Effects of the inclusion of oat hulls or sugar beet pulp in the diet on gizzard characteristics, apparent ileal digestibility of nutrients, and microbial count in the ceca in 36 day old broilers reared on floor

The effects of the inclusion of oat hulls (OH) and sugar beet pulp (SBP) in the diet on gizzard characteristics, apparent ileal nutrient digestibility (AID), and Clostridium perfringens, Enterobacteriaceae, and Lactobacillus proliferation in the ceca were studied in 36 d?old broilers. There were a control diet with a low CF content (1.61%) and 2 additional diets that resulted from the dilution of this feed with 5% of either OH or SBP.

DCT Type-III for Multicarrier Modulation

In this paper we propose the use of Discrete Cosine Transform Type-III (DCT3) for multicarrier modulation. There are two DCT3 (even and odd) and, for each of them, we derive the expressions for both prefix and suffix to be appended into each data symbol to be transmitted. Moreover, DCT3 are closely related to the corresponding inverse DCT Type-II even and odd. Furthermore, we give explicit expressions for the 1-tap per subcarrier equalizers that must be implemented at the receiver to perform the channel equalization in the frequency-domain. As a result, the proposed DCT3-based multicarrier modulator can be used as an alternative to DFT-based systems to perform Orthogonal Frequency-Division Multiplexing or Discrete Multitone Modulation

Utilización del cultivo plurianual de pataca (Helianthus tuberosus L.) para la producción de hidratos de carbono fermentables a partir de los tallos

La pataca (Helianthus tuberosus L.) es una especie de cultivo con un alto potencial en la producción de hidratos de carbono de reserva en forma de polifructanos, especialmente inulina, que se acumulan temporalmente en los tallos en forma de polisacáridos para translocarse posteriormente a los tubérculos, donde son almacenados. Aunque tradicionalmente el producto de interés del cultivo son los tubérculos, que acumulan gran cantidad de hidratos de carbono fermentables (HCF) cuando se recogen al final del ciclo de desarrollo, en este trabajo se pretende evaluar el potencial de la pataca como productor de HCF a partir de los tallos cosechados en el momento de máximo contenido en HCF, mediante un sistema de cultivo plurianual. Se han realizado los siguientes estudios: i) Determinación del momento óptimo de cosecha en ensayos con 12 clones ii) Potencial del cultivo plurianual de la pataca en términos de producción anual de biomasa aérea y de HCF en cosechas sucesivas, iii) Ensayos de conservación de la biomasa aérea, iv) Estimación de los costes de las dos modalidades de cultivo de pataca para producción de HCF y v) Estimación de la sostenibilidad energética de la producción de bioetanol mediante la utilización de los subproductos. Para la determinación del momento óptimo de la cosecha de la biomasa aérea se ensayaron 12 clones de diferente precocidad en Madrid; 4 tempranos (Huertos de Moya, C-17, Columbia y D-19) y 8 tardíos (Boniches, China, K-8, Salmantina, Nahodka, C-13, INIA y Violeta de Rennes). El máximo contenido en HCF tuvo lugar en el estado fenológico de botón floral-flor que además coincidió con la máxima producción de biomasa aérea. De acuerdo con los resultados obtenidos, la cosecha de los clones tempranos se debería realizar en el mes de julio y en los clones tardíos en septiembre, siendo éstos últimos más productivos. La producción media más representativa entre los 12 clones, obtenida en el estado fenológico de botón floral fue de 23,40 t ms/ha (clon INIA), con un contenido medio en HCF de 30,30 % lo que supondría una producción potencial media de 7,06 t HCF/ha. La producción máxima en HCF se obtuvo en el clon Boniches con 7,61 t/ha y 22,81 t ms/ha de biomasa aérea. En el sistema de cultivo plurianual la cantidad de tallos por unidad de superficie aumenta cada año debido a la cantidad de tubérculos que van quedando en el terreno, sobre todo a partir del 3er año, lo que produce la disminución del peso unitario de los tallos, con el consiguiente riesgo de encamado. El aclareo de los tallos nacidos a principios de primavera mediante herbicidas tipo Glifosato o mediante una labor de rotocultor rebaja la densidad final de tallos y mejora los rendimientos del cultivo. En las experiencias de conservación de la biomasa aérea se obtuvo una buena conservación por un período de 6 meses de los HCF contenidos en los tallos secos empacados y almacenados bajo cubierta. Considerando que el rendimiento práctico de la fermentación alcohólica es de 0,5 l de etanol por cada kg de azúcar, la producción potencial de etanol para una cosecha de tallos de 7,06 t de HCF/ha sería de 3.530 l/ha. El bagazo producido en la extracción de los HCF de la biomasa aérea supondría 11,91 t/ha lo que utilizado para fines térmicos supone más de 3 veces la energía primaria requerida en el proceso de producción de etanol, considerando un poder calorífico inferior de 3.832,6 kcal/kg. Para una producción de HCF a partir de la biomasa aérea de 7,06 t/ha y en tubérculos al final del ciclo de 12,11 t/ha, los costes de producción estimados para cada uno de ellos fueron de 184,69 €/t para los HCF procedentes de la biomasa aérea y 311,30 €/t para los de tubérculos. Como resultado de este trabajo se puede concluir que la producción de HCF a partir de la biomasa aérea de pataca en cultivo plurianual, es viable desde un punto de vista técnico, con reducción de los costes de producción respecto al sistema tradicional de cosecha de tubérculos. Entre las ventajas técnicas de esta modalidad de cultivo, cabe destacar: la reducción de operaciones de cultivo, la facilidad y menor coste de la cosecha, y la posibilidad de conservación de los HCF en la biomasa cosechada sin mermas durante varios meses. Estas ventajas, compensan con creces el menor rendimiento por unidad de superficie que se obtiene con este sistema de cultivo frente al de cosecha de los tubérculos. Jerusalem artichoke (Helianthus tuberosus L.) (JA) is a crop with a high potential for the production of carbohydrates in the form of polyfructans, especially inulin, which are temporarily accumulated in the stems in the form of polysaccharides. Subsequently they are translocated to the tubers, where they are finally accumulated. In this work the potential of Jerusalem artichoke for fermentable carbohydrates from stems that are harvested at their peak of carbohydrates accumulation is assessed as compared to the traditional cultivation system that aims at the production of tubers harvested at the end of the growth cycle. Tubers are storage organs of polyfructans, namely fermentable carbohydrates. Studies addressed in this work were: i) Determination of the optimum period of time for stem harvesting as a function of clone precocity in a 12-clone field experiment; ii) Study of the potential of JA poly-annual crop regarding the annual yield of aerial biomass and fermentable carbohydrates (HCF) over the years; iii) Tests of storage of the aerial biomass, iv) Comparative analysis of the two JA cultivation systems for HCF production: the poly-annual system for aerial biomass harvesting versus the annual cultivation system for tubers and v) Estimation of the energy sustainability of the bioethanol production by using by-products of the production chain. In order to determine the best period of time for aerial biomass harvesting twelve JA clones of different precocity were tested in Madrid: four early clones (Huertos de Moya, C-17, Columbia and D-19) and eight late clones (Boniches, China, K-8 , Salmantina, Nahodka, C-13, INIA and Violeta de Rennes). Best time was between the phenological stages of floral buds (closed capitula) and blossom (opened capitula), period in which the peak of biomass production coincides with the peak of HCF accumulation in the stems. According to the results, the early clones should be harvested in July and the late ones in September, being the late clones more productive. The clone named INIA was the one that exhibited more steady yields in biomass over the 12 clones experimented. The average potential biomass production of this clone was 23.40 t dm/ha when harvested at the floral buds phenological stage; mean HCF content is 30.30%, representing 7.06 t HCF/ha yield. However, the highest HCF production was obtained for the clone Boniches, 7.61 t HCF/ha from a production of 22.81 t aerial biomass/ha. In the poly-annual cultivation system the number of stems per unit area increases over the years due to the increase in the number of tubers that are left under ground; this effect is particularly important after the 3rd year of the poly-annual crop and results in a decrease of the stems unit weight and a risk of lodging. Thinning of JA shoots in early spring, by means of an herbicide treatment based on glyphosate or by means of one pass with a rotary tiller, results in a decrease of the crop stem density and in higher crop yields. Tests of biomass storing showed that the method of keeping dried stems packed and stored under cover results in a good preservation of HCF for a period of six months at least. Assuming that the fermentation yield is 0.5 L ethanol per kg sugars and a HCF stem production of 7.06 t HCF/ha, the potential for bioethanol is estimated at 3530 L/ha. The use of bagasse -by-product of the process of HCF extraction from the JA stems- for thermal purposes would represent over 3 times the primary energy required for the industrial ethanol production process, assuming 11.91 t/ha bagasse and 3832.6 kcal/kg heating value. HCF production costs of 7.06 t HCF/ha yield from aerial biomass and HCF production costs of 12.11 t HCF/ha from tubers were estimated at 184.69 €/t HCF and 311.30 €/t HCF, respectively. It can be concluded that the production of HCF from JA stems, following a poly-annual cultivation system, can be feasible from a technical standpoint and lead to lower production costs as compared to the traditional annual cultivation system for the production of HCF from tubers. Among the technical advantages of the poly-annual cultivation system it is worth mentioning the reduction in crop operations, the ease and efficiency of harvesting operations and the possibility of HCF preservation without incurring in HCF losses during the storage period, which can last several months. These advantages might compensate the lower yield of HCF per unit area that is obtained in the poly-annual crop system, which aims at stems harvesting, versus the annual one, which involves tubers harvesting.

Crecimiento, fabricación y caracterización de heteroestructuras y nanocolumnas ordenadas basadas en nitruros del grupo III para aplicaciones sensoras

Esta memoria está basada en el crecimiento y caracterización de heteroestructuras Al(Ga)N/GaN y nanocolumnas ordenadas de GaN, y su aplicación en sensores químicos. El método de crecimiento ha sido la epitaxia de haces moleculares asistida por plasma (PAMBE). En el caso de las heteroestructuras Al(Ga)N/GaN, se han crecido barreras de distinto espesor y composición, desde AlN de 5 nm, hasta AlGaN de 35 nm. Además de una caracterización morfológica, estructural y eléctrica básica de las capas, también se han fabricado a partir de ellas dispositivos tipo HEMTs. La caracterización eléctrica de dichos dispositivos (carga y movilidad de en el canal bidimensional) indica que las mejores heteroestructuras son aquellas con un espesor de barrera intermedio (alrededor de 20 nm). Sin embargo, un objetivo importante de esta Tesis ha sido verificar las ventajas que podían tener los sensores basados en heteroestructuras AlN/GaN (frente a los típicos basados en AlGaN/GaN), con espesores de barrera muy finos (alrededor de 5 nm), ya que el canal de conducción que se modula por efecto de cambios químicos está más cerca de la superficie en donde ocurren dichos cambios químicos. De esta manera, se han utilizado los dispositivos tipo HEMTs como sensores químicos de pH (ISFETs), y se ha comprobado la mayor sensibilidad (variación de corriente frente a cambios de pH, Ids/pH) en los sensores basados en AlN/GaN frente a los basados en AlGaN/GaN. La mayor sensibilidad es incluso más patente en aplicaciones en las que no se utiliza un electrodo de referencia. Se han fabricado y caracterizado dispositivos ISFET similares utilizando capas compactas de InN. Estos sensores presentan peor estabilidad que los basados en Al(Ga)N/GaN, aunque la sensibilidad superficial al pH era la misma (Vgs/pH), y su sensibilidad en terminos de corriente de canal (Ids/pH) arroja valores intermedios entre los ISFET basados en AlN/GaN y los valores de los basados en AlGaN/GaN. Para continuar con la comparación entre dispositivos basados en Al(Ga)N/GaN, se fabricaron ISFETs con el área sensible más pequeña (35 x 35 m2), de tamaño similar a los dispositivos destinados a las medidas de actividad celular. Sometiendo los dispositivos a pulsos de voltaje en su área sensible, la respuesta de los dispositivos de AlN presentaron menor ruido que los basados en AlGaN. El ruido en la corriente para dispositivos de AlN, donde el encapsulado no ha sido optimizado, fue tan bajo como 8.9 nA (valor rms), y el ruido equivalente en el potencial superficial 38.7 V. Estos valores son más bajos que los encontrados en los dispositivos típicos para la detección de actividad celular (basados en Si), y del orden de los mejores resultados encontrados en la literatura sobre AlGaN/GaN. Desde el punto de vista de la caracterización electro-química de las superficies de GaN e InN, se ha determinado su punto isoeléctrico. Dicho valor no había sido reportado en la literatura hasta el momento. El valor, determinado por medidas de “streaming potential”, es de 4.4 y 4 respectivamente. Este valor es una importante característica a tener en cuenta en sensores, en inmovilización electrostática o en la litografía coloidal. Esta última técnica se discute en esta memoria, y se aplica en el último bloque de investigación de esta Tesis (i.e. crecimiento ordenado). El último apartado de resultados experimentales de esta Tesis analiza el crecimiento selectivo de nanocolumnas ordenadas de GaN por MBE, utilizando mascaras de Ti con nanoagujeros. Se ha estudiado como los distintos parámetros de crecimiento (i.e. flujos de los elementos Ga y N, temperatura de crecimiento y diseño de la máscara) afectan a la selectividad y a la morfología de las nanocolumnas. Se ha conseguido con éxito el crecimiento selectivo sobre pseudosustratos de GaN con distinta orientación cristalina o polaridad; templates de GaN(0001)/zafiro, GaN(0001)/AlN/Si, GaN(000-1)/Si y GaN(11-20)/zafiro. Se ha verificado experimentalmente la alta calidad cristalina de las nanocolumnas ordenadas, y su mayor estabilidad térmica comparada con las capas compactas del mismo material. Las nanocolumnas ordenadas de nitruros del grupo III tienen una clara aplicación en el campo de la optoelectrónica, principalmente para nanoemisores de luz blanca. Sin embargo, en esta Tesis se proponen como alternativa a la utilización de capas compactas o nanocolumnas auto-ensambladas en sensores. Las nanocolumnas auto-ensambladas de GaN, debido a su alta razón superficie/volumen, son muy prometedoras en el campo de los sensores, pero su amplia dispersión en dimensiones (altura y diámetro) supone un problema para el procesado y funcionamiento de dispositivos reales. En ese aspecto, las nanocolumnas ordenadas son más robustas y homogéneas, manteniendo una alta relación superficie/volumen. Como primer experimento en el ámbito de los sensores, se ha estudiado como se ve afectada la emisión de fotoluminiscencia de las NCs ordenadas al estar expuestas al aire o al vacio. Se observa una fuerte caída en la intensidad de la fotoluminiscencia cuando las nanocolumnas están expuestas al aire (probablemente por la foto-adsorción de oxigeno en la superficie), como ya había sido documentado anteriormente en nanocolumnas auto-ensambladas. Este experimento abre el camino para futuros sensores basados en nanocolumnas ordenadas. Abstract This manuscript deals with the growth and characterization of Al(Ga)N/GaN heterostructures and GaN ordered nanocolumns, and their application in chemical sensors. The growth technique has been the plasma-assisted molecular beam epitaxy (PAMBE). In the case of Al(Ga)N/GaN heterostructures, barriers of different thickness and composition, from AlN (5 nm) to AlGaN (35 nm) have been grown. Besides the basic morphological, structural and electrical characterization of the layers, HEMT devices have been fabricated based on these layers. The best electrical characteristics (larger carriers concentration and mobility in the two dimensional electron gas) are those in AlGaN/GaN heterostructures with a medium thickness (around 20 nm). However, one of the goals of this Thesis has been to verify the advantages that sensors based on AlN/GaN (thickness around 7 nm) have compared to standard AlGaN/GaN, because the conduction channel to be modulated by chemical changes is closer to the sensitive area. In this way, HEMT devices have been used as chemical pH sensors (ISFETs), and the higher sensitivity (conductance change related to pH changes, Ids/pH) of AlN/GaN based sensors has been proved. The higher sensibility is even more obvious in application without reference electrode. Similar ISFETs devices have been fabricated based on InN compact layers. These devices show a poor stability, but its surface sensitivity to pH (Vgs/pH) and its sensibility (Ids/pH) yield values between the corresponding ones of AlN/GaN and AlGaN/GaN heterostructures. In order to a further comparison between Al(Ga)N/GaN based devices, ISFETs with smaller sensitive area (35 x 35 m2), similar to the ones used in cellular activity record, were fabricated and characterized. When the devices are subjected to a voltage pulse through the sensitive area, the response of AlN based devices shows lower noise than the ones based on AlGaN. The noise in the current of such a AlN based device, where the encapsulation has not been optimized, is as low as 8.9 nA (rms value), and the equivalent noise to the surface potential is 38.7 V. These values are lower than the found in typical devices used for cellular activity recording (based on Si), and in the range of the best published results on AlGaN/GaN. From the point of view of the electrochemical characterization of GaN and InN surfaces, their isoelectric point has been experimentally determined. Such a value is the first time reported for GaN and InN surfaces. These values are determined by “streaming potential”, being pH 4.4 and 4, respectively. Isoelectric point value is an important characteristic in sensors, electrostatic immobilization or in colloidal lithography. In particular, colloidal lithography has been optimized in this Thesis for GaN surfaces, and applied in the last part of experimental results (i.e. ordered growth). The last block of this Thesis is focused on the selective area growth of GaN nanocolumns by MBE, using Ti masks decorated with nanoholes. The effect of the different growth parameters (Ga and N fluxes, growth temperature and mask design) is studied, in particular their impact in the selectivity and in the morphology of the nanocolumns. Selective area growth has been successful performed on GaN templates with different orientation or polarity; GaN(0001)/sapphire, GaN(0001)/AlN/Si, GaN(000- 1)/Si and GaN(11-20)/sapphire. Ordered nanocolumns exhibit a high crystal quality, and a higher thermal stability (lower thermal decomposition) than the compact layers of the same material. Ordered nanocolumns based on III nitrides have a clear application in optoelectronics, mainly for white light nanoemitters. However, this Thesis proposes them as an alternative to compact layers and self-assembled nanocolumns in sensor applications. Self-assembled GaN nanocolumns are very appealing for sensor applications, due to their large surface/volume ratio. However, their large dispersion in heights and diameters are a problem in terms of processing and operation of real devices. In this aspect, ordered nanocolumns are more robust and homogeneous, keeping the large surface/volume ratio. As first experimental evidence of their sensor capabilities, ordered nanocolumns have been studied regarding their photoluminiscence on air and vacuum ambient. A big drop in the intensity is observed when the nanocolumns are exposed to air (probably because of the oxygen photo-adsortion), as was already reported in the case of self-assembled nanocolumns. This opens the way to future sensors based on ordered III nitrides nanocolumns.

Oxygen photo-adsorption related quenching of photoluminescence in group-III nitride nanocolumns

GaN and InGaN nanocolumns of various compositions are studied by room-temperature photoluminescence (PL) under different ambient conditions. GaN nanocolumns exhibit a reversible quenching upon exposure to air under constant UV excitation, following a t−1/2 time dependence and resulting in a total reduction of intensity by 85–90%, as compared to PL measured in vacuum, with no spectral change. This effect is not observed when exposing the samples to pure nitrogen. We attribute this effect to photoabsorption and photodesorption of oxygen that modifies the surface potential bending. InGaN nanocolumns, under the same experimental conditions do not show the same quenching features: The high-energy part of the broad PL line is not modified by exposure to air, whereas a lower-energy part, which does quench by 80–90%, can now be distinguished. We discuss the different behaviors in terms of carrier localization and possible composition or strain gradients in the InGaN nanocolumns.

Ad illustrissimu[m] principe[m] Alfonsum Aragoneum Ferdinandi regis filium ... Lucii Marinei Siculi epistolaru[m] familiariu[m] libri dece[m] septe[m] ; Or[ati]ones quinq[ue] ; de parcis liber vnus ; repetitio de verbo fero eius co[m]positis liber vnu

Marca tip. con orla en colofón (Vindel, 29)

Ad illustrissimu[m] principe[m] Alfonsum Aragoneum Ferdinandi regis filium ... Lucii Marinei Siculi epistolaru[m] familiariu[m] libri dece[m] septe[m] ; Or[ati]ones quinq[ue] ; de parcis liber vnus ; repetitio de verbo fero eius co[m]positis liber vnu

Marca tip. con orla en colofón (Vindel, 29)

Understanding phosphorus diffusion into silicon in a MOVPE environment for III-V on silicon solar cells

Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon bottom cell seem to be attractive candidates to materialize the long sought-for integration of III?V materials on silicon for photovoltaic applications. When manufacturing a multi-junction solar cell on silicon, one of the first processes to be addressed is the development of the bottom subcell and, in particular, the formation of its emitter. In this study, we analyze, both experimentally and by simulations, the formation of the emitter as a result of phosphorus diffusion that takes place during the first stages of the epitaxial growth of the solar cell. Different conditions for the Metal-Organic Vapor Phase Epitaxy (MOVPE) process have been evaluated to understand the impact of each parameter, namely, temperature, phosphine partial pressure, time exposure and memory effects in the final diffusion profiles obtained. A model based on SSupremIV process simulator has been developed and validated against experimental profiles measured by ECV and SIMS to calculate P diffusion profiles in silicon formed in a MOVPE environment taking in consideration all these factors.