Raman scattering efficiency of graphene

We determine the Raman scattering efficiency of the G and 2D peaks in graphene. Three substrates are used: silicon covered with 300 or 90 nm oxide, and calcium fluoride (CaF2). On Si/SiOx, the areas of the G and 2D peak show a strong dependence on the substrate due to interference effects, while on CaF2 no significant dependence is detected. Unintentional doping is reduced by placing graphene on CaF2. We determine the Raman scattering efficiency by comparison with the 322 cm -1 peak area of CaF2. At 2.41 eV, the Raman efficiency of the G peak is ∼200×10-5 m-1Sr-1, and changes with the excitation energy to the power of 4. The 2D Raman efficiency is at least one order of magnitude higher than that of the G peak, with a different excitation energy dependence. © 2013 American Physical Society.

Engineering Fundamentals of Energy Efficiency

Using energy more efficiently is essential if carbon emissions are to be reduced. According to the International Energy Agency (IEA), energy efficiency improvements represent the largest and least costly savings in carbon emissions, even when compared with renewables, nuclear power and carbon capture and storage. Yet, how should future priorities be directed? Should efforts be focused on light bulbs or diesel engines, insulating houses or improving coal-fired power stations? Previous attempts to assess energy efficiency options provide a useful snapshot for directing short-term responses, but are limited to only known technologies developed under current economic conditions. Tomorrow's economic drivers are not easy to forecast, and new technical solutions often present in a disruptive manner. Fortunately, the theoretical and practical efficiency limits do not vary with time, allowing the uncertainty of economic forecasts to be avoided and the potential of yet to be discovered efficient designs to be captured. This research aims to provide a rational basis for assessing all future developments in energy efficiency. The global fow of energy through technical devices is traced from fuels to final services, and presented as an energy map to convey visually the scale of energy use. An important distinction is made between conversion devices, which upgrade energy into more useable forms, and passive systems, from which energy is lost as low temperature heat, in exchange for final services. Theoretical efficiency limits are calculated for conversion devices using exergy analysis, and show a 89% potential reduction in energy use. Efforts should be focused on improving the efficiency of, in relative order: biomass burners, refrigeration systems, gas burners and petrol engines. For passive systems, practical utilisation limits are calculated based on engineering models, and demonstrate energy savings of 73% are achievable. Significant gains are found in technical solutions that increase the thermal insulation of building fabrics and reduce the mass of vehicles. The result of this work is a consistent basis for comparing efficiency options, that can enable future technical research and energy policy to be directed towards the actions that will make the most difference.

Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDs

The efficiency of the injection and recombination processes in InGaN/GaN LEDs is governed by the properties of the active region of the devices, which strongly depend on the conditions used for the growth of the epitaxial material. To improve device quality, it is very important to understand how the high temperatures used during the growth process can modify the quality of the epitaxial material. With this paper we present a study of the modifications in the properties of InGaN/GaN LED structures induced by high temperature annealing: thermal stress tests were carried out at 900 °C, in nitrogen atmosphere, on selected samples. The efficiency and the recombination dynamics were evaluated by photoluminescence measurements (both integrated and time-resolved), while the properties of the epitaxial material were studied by Secondary Ion Mass Spectroscopy (SIMS) and Rutherford Backscattering (RBS) channeling measurements. Results indicate that exposure to high temperatures may lead to: (i) a significant increase in the photoluminescence efficiency of the devices; (ii) a decrease in the parasitic emission bands located between 380 nm and 400 nm; (iii) an increase in carrier lifetime, as detected by time-resolved photoluminescence measurements. The increase in device efficiency is tentatively ascribed to an improvement in the crystallographic quality of the samples. © 2013 SPIE.

Friction-induced vibration: Model development and comparison with large-scale experimental tests

This paper presents a comparison between theoretical predictions and experimental results from a pin-on-disc test rig exploring friction-induced vibration. The model is based on a linear stability analysis of two systems coupled by sliding contact at a single point. Predictions are compared with a large volume of measured squeal initiations that have been post-processed to extract growth rates and frequencies at the onset of squeal. Initial tests reveal the importance of including both finite contact stiffness and a velocity-dependent dynamic model for friction, giving predictions that accounted for nearly all major clusters of squeal initiations from 0 to 5 kHz. However, a large number of initiations occurred at disc mode frequencies that were not predicted with the same parameters. These frequencies proved remarkably difficult to destabilise, requiring an implausibly high coefficient of friction. An attempt has been made to estimate the dynamic friction behaviour directly from the squeal initiation data, revealing complex-valued frequency-dependent parameters for a new model of linearised dynamic friction. These new parameters readily destabilised the disc modes and provided a consistent model that could account for virtually all initiations from 0 to 15 kHz. The results suggest that instability thresholds for a wide range of squeal-type behaviour can be predicted, but they highlight the central importance of a correct understanding and accurate description of dynamic friction at the sliding interface. © 2013 Elsevier Ltd. All rights reserved.

The effect of dislocations on the efficiency of InGaN/GaN solar cells

Two solar cells based on an InGaN/GaN p-i-n hetero-junction, but having different dislocation densities, were fabricated and characterized. The structures were grown on c-plane (0001) GaN-on-sapphire templates with different threading dislocation (TD) densities of 5×108 and 5×109 cm-2. Structural characterization revealed the presence of V-defects in the InGaN epilayer. Since each V-defect was associated with a TD, the structural as well as the optical properties worsened with a higher TD density in the GaN/sapphire template. It was also found that additional dislocations were generated in the p-GaN layer over the V-defects in the InGaN layer. Because of its superior structural quality, the peak external quantum efficiency (EQE) of the low TD density sample was three times higher than that of the high TD density sample. © 2013 Elsevier B.V.

Enhancement of microfluidic efficiency with nanocrystalline diamond interlayer in the ZnO-based surface acoustic wave device

Ultra-smooth nanocrystalline diamond (UNCD) films with high-acoustic wave velocity were introduced into ZnO-based surface acoustic wave (SAW) devices to enhance their microfluidic efficiency by reducing the acoustic energy dissipation into the silicon substrate and improving the acoustic properties of the SAW devices. Microfluidic efficiency of the ZnO-based SAW devices with and without UNCD inter layers was investigated and compared. Results showed that the pumping velocities increase with the input power and those of the ZnO/UNCD/Si devices are much larger than those of the ZnO/Si devices at the same power. The jetting efficiency of the droplet was improved by introducing the UNCD interlayer into the ZnO/Si SAW device. Improvement in the microfluidic efficiency is mainly attributed to the diamond layer, which restrains the acoustic wave to propagate in the top layer rather than dissipating into the substrate. © 2013 Springer-Verlag Berlin Heidelberg.

Tests of an adaptive QM/MM calculation on free energy profiles of chemical reactions in solution.

We present reaction free energy calculations using the adaptive buffered force mixing quantum mechanics/molecular mechanics (bf-QM/MM) method. The bf-QM/MM method combines nonadaptive electrostatic embedding QM/MM calculations with extended and reduced QM regions to calculate accurate forces on all atoms, which can be used in free energy calculation methods that require only the forces and not the energy. We calculate the free energy profiles of two reactions in aqueous solution: the nucleophilic substitution reaction of methyl chloride with a chloride anion and the deprotonation reaction of the tyrosine side chain. We validate the bf-QM/MM method against a full QM simulation, and show that it correctly reproduces both geometrical properties and free energy profiles of the QM model, while the electrostatic embedding QM/MM method using a static QM region comprising only the solute is unable to do so. The bf-QM/MM method is not explicitly dependent on the details of the QM and MM methods, so long as it is possible to compute QM forces in a small region and MM forces in the rest of the system, as in a conventional QM/MM calculation. It is simple, with only a few parameters needed to control the QM calculation sizes, and allows (but does not require) a varying and adapting QM region which is necessary for simulating solutions.

A global assessment of manufacturing: Economic development, energy use, carbon emissions, and the potential for energy efficiency and materials recycling

We present in two parts an assessment of global manufacturing. In the first part, we review economic development, pollution, and carbon emissions from a country perspective, tracking the rise of China and other developing countries. The results show not only a rise in the economic fortunes of the newly industrializing nations, but also a significant rise in global pollution, particularly air pollution and CO2 emissions largely from coal use, which alter and even reverse previous global trends. In the second part, we change perspective and quantitatively evaluate two important technical strategies to reduce pollution and carbon emissions: energy efficiency and materials recycling. We subdivide the manufacturing sector on the basis of the five major subsectors that dominate energy use and carbon emissions: (a) iron and steel, (b) cement, (c) plastics, (d) paper, and (e) aluminum. The analysis identifies technical constraints on these strategies, but by combined and aggressive action, industry should be able to balance increases in demand with these technical improvements. The result would be high but relatively flat energy use and carbon emissions. The review closes by demonstrating the consequences of extrapolating trends in production and carbon emissions and suggesting two options for further environmental improvements, materials efficiency, and demand reduction. © 2013 by Annual Reviews. All rights reserved.

Low-cost high-efficiency GaN LED on large-area si substrate

The use of large size Si substrates for epitaxy of nitride light emitting diode (LED) structures has attracted great interest because Si wafers are readily available in large diameter at low cost. In addition, such wafers are compatible with existing processing lines for the 6-inch and larger wafer sizes commonly used in the electronics industry. With the development of various methods to avoid wafer cracking and reduce the defect density, the performance of GaN-based LED and electronic devices has been greatly improved. In this paper, we review our methods of growing crack-free InGaN-GaN multiple quantum well (MQW) LED structures of high crystalline quality on Si(111) substrates. The performance of processed LED devices and its dependence on the threading dislocation density were studied. Full wafer-level LED processing using a conventional 6-inch III-V processing line is also presented, demonstrating the great advantage of using large-size Si substrates for mass production of GaN LED devices.

Initial investigation into the use of GGBS-MgO in soil stabilisation

Portland cement (PC) is the most widely used binder for ground improvement. However, there are significant environmental impacts associated with its production in terms of high energy consumption and CO2 emissions. Hence, the use of industrial by-products materials or new low-carbon footprint alternative cements has been encouraged. Ground granulated blastfurnace slag (GGBS), a by-product of the steel industry, has been successfully used for such an application, usually activated with an alkali such as lime or PC. In this study the use of MgO as a novel activator for GGBS in ground improvement of soft soils is addressed and its performance was compared to the above two conventional activators as well as PC alone. The GGBS:activator ratio used in this study was 9:1. A range of tests was performed at three curing periods (7, 28 and 90 days), including unconfined compressive strength (UCS), permeability and microstructure analysis. The results show that the MgO performed as the most efficient activator yielding the highest strength and the lowest permeability indicating a very high stabilisation efficiency of the system. © 2012 American Society of Civil Engineers.

Boundary conditions in physical model tests-the influence of deck pinning on the response of piled bridge abutments in laterally spreading soils

Physical models are widely used in the study of geotechnical earthquake engineering phenomena, and the comparison of modelling results to observations from field reconnaissance provides a transparent means of evaluating the design of our physical models. This paper compares centrifuge tests of pile groups in laterally spreading slopes with the response of piled bridge abutments in the 2011 Christchurch earthquake. We show that the model foundation's fixity conditions strongly affect the success with which the mechanism of response of the real abutments is replicated in the tests. © 2012 American Society of Civil Engineers.