Spin squeezing, macrorealism and the heisenberg uncertainty principle

169 p.

Comparison of cerium-doped Lu2Si2O7 and Lu2SiO5 scintillators

In this paper, high optical quality cerium-doped lutetium pyrosilicate(LPS:Ce) crystal has been grown by Czochralski method with the seed oriented along cleavage plane (1 1 0). The structure, segregation coefficient of Ce3+ and optical characterization of LPS:Ce crystal have been compared with those of LSO:Ce crystal. The results show that LPS:Ce has the advantage over LSO:Ce by having a larger segregation coefficient of Ce3+, lower cost of starting material, lower melting point and only one luminescence mechanism. Thus, LPS:Ce crystal offers an attractive alternative to LSO:Ce for scintillator applications. (c) 2005 Elsevier B.V. All rights reserved.

Comparison of spectroscopic parameters of 15 at% Yb : YAlO3 and 15 at% Yb : Y3Al5O12

Yb: YAlO3 (YAP) (15 at %) and Yb: Y3Al5O12 (YAG)(15 at %) have been grown using the Czochralski method. Their absorption and fluorescence spectra were measured at room temperature and important spectroscopic parameters were calculated. Through the comparison of spectroscopic parameters of Yb:YAP and Yb: YAG, all results indicate that 15 at % Yb:YAP crystal is a potential candidate used for compact, efficient thin chip lasers when the laser output wavelength is 1012 or 103 8 nm. (C) 2004 Elsevier B.V. All rights reserved.

A comparison between TGT and Cz grown Nd : YAG

Large sized neodymium-doped Y3Al5O12 (Nd:YAG) laser crystals have been grown by temperature gradient technique (TGT) method and compared with Czochralski (Cz) method. The comparison of these two crystal growth methods has been listed. The results showed that the TGT method has many advantages over the Cz method. The concentration distribution of Nd ions in the crystals was determined and the absorption spectra of these crystals have been investigated and compared. The TGT grown highly doped Nd:YAG crystal has a larger absorption FWHM than that of Cz grown Nd:YAG crysral. Highly doped Nd:YAG (similar to 2.8 at. pct) crystals could be obtained by TGT.

Comparison of ZnO films grown on before- and after-vapor transport equilibration (VTE) LiAlO2 substrates by pulsed laser deposition (PLD)

About Phi 45 mm LiAlO2 single crystal was grown by Czochralski (Cz) technique. However, the full-width at half-maximum (FWHM) value was high to 116.9 arcsec. After three vapor transport equilibration (VTE) processes, we can obtain high-quality LiAlO2 slice with the FWHM value of 44.2 arcsec. ZnO films were fabricated on as-grown slices and after-VTE ones by pulsed laser deposition (PLD). It was found that ZnO films on the two slices have similar crystallinity, optical transmittance and optical band gap at room temperature. These results not only show that LAO substrate is suitable for ZnO growth, but also prove that the crystal quality of LAO substrate slightly affects the structural and optical properties of ZnO film.