974 resultados para Band Pass Filters


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The quality factor of microwave resonators miniaturised by virtue of periodic loading is assessed. Five X-band resonators in E-plane technology with different miniaturisation factors have been designed to resonate at approximately the same frequency. The loaded quality factor is extracted from the fractional bandwidth and subsequently employed to estimate the unloaded quality factor. The study reveals that the unloaded quality factor drops approximately linearly with the miniaturisation. Subsequently design guidelines for E-plane filters with periodically loaded resonators are provided by means of an example involving a fifth-order filter. Full-wave simulated and experimental results are presented to validate the study.

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The problem of diffraction of an optical wave by a 2D periodic metal aperture array with square, circular, and ring apertures is solved with allowance for the finite permittivity of a metal in the optical band. The correctness of the obtained results is verified through comparison with experimental data. It is shown that the transmission coefficient can be substantially greater than the corresponding value reached in the case of diffraction by a grating in a perfectly conducting screen.

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The resonance Raman spectra of the lowest lying singlet (S-1) state of free-base tetraphenylporphyrin and seven of its isotopomers were recorded under pump-and-probe conditions with a time delay of -2 ns between pump and probe laser pulses, In the S-1 spectra of the isotopomers, as in the ground state, there are dramatic splittings of what appear to be single bands in the natural isotopic abundance spectrum. The most structurally significant bands of the S-1 state were assigned on the basis of the isotope data, In some cases it was necessary to curve fit unresolved bands in the excited-state spectra in order to account for observed intensity ratios and to rationalize isotope shifts, The changes in band positions on excitation to the S-1 state were compared with those from earlier studies on the T-1 state. The changes in band positions were found to be similar For both excited states. Most notable was the similar shift in nu(2), the most widely used marker band for orbital character. The data are interpreted as implying that the lowest lying singlet state is a configuration interaction admixture of b(1u)b(2g) + a(u)b(3g) configurations with the coefficients weighted heavily in favour of b(1n)b(2g), which Is the configuration of the T-1 state. Copyright (C) 2000 John Wiley & Sons, Ltd.

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A rectangular waveguide-to-microstrip transition operating at G-band is presented. The E-plane probe, used in the transition, is fabricated on semi-insulating gallium arsenide (SI-GaAs) and it is elevated on the substrate. This configuration reduces interaction with semiconductor material. The elevated probe is suitable for direct integration with monolithic microwave integrated circuits. Measured results show S11 better than 210dB between 150 and 200 GHz and S21 ¼ 2 4dB at centre band (180GHz) for two transitions in back-to-back configuration.

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From measurements of spatial coherence and beam divergence of Ge soft x-ray laser at a far field, the x-ray laser beam has been characterized as a partially coherent Gaussian beam. Double-pass amplification will improve spatial and temporal coherence, spectral brightness and efficiency. Close to 100% geometrical coupling efficiency has been obtained in double pass amplification in Ge. Transient loss of feedback is attributed to mirror structure damage within the build-up time of the x-ray laser. Prospect for generation of coherent x-ray laser beam is discussed.

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Amplification of spontaneous emission at 23.6 nm has been studied in a Ge plasma heated by a 1 TW, 1.06 mum wavelength, laser pulse. The exponent of the axial gain reached 21 in a geometry with Fresnel number less-than-or-equal-to 1. Two plasma columns were produced by irradiation of slab targets up to a combined length of 3.6 cm. A narrow band XUV mirror allowed double pass amplification. Saturation of ASE output at 23.6 nm was observed as a change from exponential to linear growth of the output with plasma length. Further evidence of the effect was provided by a decline in the ratio of the output at 23.6 nm to that at 23.2 nm from approximately 1.6: 1 to approximately 0.5: 1, the latter being the theoretically predicted value for saturated operation. The onset of saturation at gL almost-equal-to 15 is consistent with model calculations. The beam divergence was about 8x diffraction limited with a brightness estimated at almost-equal-to 10(14) W/cm2/ster.