984 resultados para Alternative Sigma-factor


Relevância:

20.00% 20.00%

Publicador:

Resumo:

This paper deals with a new approach to study the nonlinear inviscid flow over arbitrary bottom topography. The problem is formulated as a nonlinear boundary value problem which is reduced to a Dirichlet problem using certain transformations. The Dirichlet problem is solved by applying Plemelj-Sokhotski formulae and it is noticed that the solution of the Dirichlet problem depends on the solution of a coupled Fredholm integral equation of the second kind. These integral equations are solved numerically by using a modified method. The free-surface profile which is unknown at the outset is determined. Different kinds of bottom topographies are considered here to study the influence of bottom topography on the free-surface profile. The effects of the Froude number and the arbitrary bottom topography on the free-surface profile are demonstrated in graphical forms for the subcritical flow. Further, the nonlinear results are validated with the results available in the literature and compared with the results obtained by using linear theory. (C) 2015 Elsevier Inc. All rights reserved.

Relevância:

20.00% 20.00%

Publicador:

Resumo:

We investigate the electronic and thermal transport properties of bulk MX2 compounds (M = Zr, Hf and X = S, Se) by first-principles calculations and semi-classical Boltzmann transport theory. The band structure shows the confinement of heavy and light bands along the out of plane and in-plane directions, respectively. This results in high electrical conductivity (sigma) and large thermopower leading to a high power factor (S-2 sigma) for moderate n-type doping. The phonon dispersion demonstrates low frequency flat acoustical modes, which results in low group velocities (v(g)). Consequently, lowering the lattice thermal conductivity (kappa(latt)) below 2 W/m K. Low kappa(latt) combined with high power factor results in ZT > 0.8 for all the bulk MX2 compounds at high temperature of 1200 K. In particular, the ZT(max) of HfSe2 exceeds 1 at 1400 K. Our results show that Hf/Zr based dichalcogenides are very promising for high temperature thermoelectric application. (C) 2015 AIP Publishing LLC.

Relevância:

20.00% 20.00%

Publicador:

Resumo:

We study an s-channel resonance R as a viable candidate to fit the diboson excess reported by ATLAS. We compute the contribution of the similar to 2 TeV resonance R to semileptonic and leptonic final states at the 13 TeV LHC. To explain the absence of an excess in the semileptonic channel, we explore the possibility where the particle R decays to additional light scalars X, X or X, Y. A modified analysis strategy has been proposed to study the three-particle final state of the resonance decay and to identify decay channels of X. Associated production of R with gauge bosons has been studied in detail to identify the production mechanism of R. We construct comprehensive categories for vector and scalar beyond-standard-model particles which may play the role of particles R, X, Y and find alternate channels to fix the new couplings and search for these particles.

Relevância:

20.00% 20.00%

Publicador:

Resumo:

This paper evaluates cost and performance tradeoffs of alternative supercritical carbon dioxide (s-CO2) closed-loop Brayton cycle configurations with a concentrated solar heat source. Alternative s-CO2 power cycle configurations include simple, recompression, cascaded, and partial cooling cycles. Results show that the simple closed-loop Brayton cycle yielded the lowest power-block component costs while allowing variable temperature differentials across the s-CO2 heating source, depending on the level of recuperation. Lower temperature differentials led to higher sensible storage costs, but cycle configurations with lower temperature differentials (higher recuperation) yielded higher cycle efficiencies and lower solar collector and receiver costs. The cycles with higher efficiencies (simple recuperated, recompression, and partial cooling) yielded the lowest overall solar and power-block component costs for a prescribed power output.

Relevância:

20.00% 20.00%

Publicador:

Resumo:

Using dislocation simulation approach, the basic equation for a finite crack perpendicular to and terminating at a bimaterial interface is formulated. A novel expansion method is proposed for solving the problem. The complete solution to the problem, including the explicit formulae for the T stresses ahead of the crack tip and the stress intensity factors are presented. The stress held characteristics are analysed in detail. It is found that normal stresses sigma(x) and sigma(y) ahead of the crack tip, are characterised by Q fields if the crack is within a stiff material and the parameters \p(T)\ and \q(T)\ are very small, where Q is a generalised stress intensity factor for a crack normal to and terminating at the interface. If the crack is within a weak material, the normal stresses sigma(x) and sigma(y) are dominated by the Q field plus T stress.

Relevância:

20.00% 20.00%

Publicador:

Resumo:

The dynamic response of a finite crack in an unbounded Functionally Graded Material (FGM) subjected to an antiplane shear loading is studied in this paper. The variation of the shear modulus of the functionally graded material is modeled by a quadratic increase along the direction perpendicular to the crack surface. The dynamic stress intensity factor is extracted from the asymptotic expansion of the stresses around the crack tip in the Laplace transform plane and obtained in the time domain by a numerical Laplace inversion technique. The influence of graded material property on the dynamic intensity factor is investigated. It is observed that the magnitude of dynamic stress intensity factor for a finite crack in such a functionally graded material is less than in the homogeneous material with a property identical to that of the FGM crack plane.

Relevância:

20.00% 20.00%

Publicador:

Resumo:

Nanocomposite thin film transistors (TFTs) based on nonpercolating networks of single-walled carbon nanotubes (CNTs) and polythiophene semiconductor [poly [5, 5′ -bis(3-dodecyl-2-thienyl)- 2, 2′ -bithiophene] (PQT-12)] thin film hosts are demonstrated by ink-jet printing. A systematic study on the effect of CNT loading on the transistor performance and channel morphology is conducted. With an appropriate loading of CNTs into the active channel, ink-jet printed composite transistors show an effective hole mobility of 0.23 cm 2 V-1 s-1, which is an enhancement of more than a factor of 7 over ink-jet printed pristine PQT-12 TFTs. In addition, these devices display reasonable on/off current ratio of 105-10 6, low off currents of the order of 10 pA, and a sharp subthreshold slope (<0.8 V dec-1). The work presented here furthers our understanding of the interaction between polythiophene polymers and nonpercolating CNTs, where the CNT density in the bilayer structure substantially influences the morphology and transistor performance of polythiophene. Therefore, optimized loading of ink-jet printed CNTs is crucial to achieve device performance enhancement. High performance ink-jet printed nanocomposite TFTs can present a promising alternative to organic TFTs in printed electronic applications, including displays, sensors, radio-frequency identification (RFID) tags, and disposable electronics. © 2009 American Institute of Physics.

Relevância:

20.00% 20.00%

Publicador:

Resumo:

This paper details a bulk acoustic mode resonator fabricated in single-crystal silicon with a quality factor of 15 000 in air, and over a million below 10 mTorr at a resonant frequency of 2.18 MHz. The resonator is a square plate that is excited in the square-extensional mode and has been fabricated in a commercial foundry silicon-on-insulator (SOI) MEMS process through MEMSCAP. This paper also presents a simple method of extracting resonator parameters from raw measurements heavily buried in electrical feedthrough. Its accuracy has been demonstrated through a comparison between extracted motional resistance values measured at different voltage biases and those predicted from an analytical model. Finally, a method of substantially cancelling electrical feedthrough through system-level electronic implementation is also introduced. © 2008 IOP Publishing Ltd.

Relevância:

20.00% 20.00%

Publicador:

Resumo:

This paper reports the design and electrical characterization of a micromechanical disk resonator fabricated in single crystal silicon using a foundry SOI micromachining process. The microresonator has been selectively excited in the radial extensional and the wine glass modes by reversing the polarity of the DC bias voltage applied on selected drive electrodes around the resonant structure. The quality factor of the resonator vibrating in the radial contour mode was 8000 at a resonant frequency of 6.34 MHz at pressure below 10 mTorr vacuum. The highest measured quality factor of the resonator in the wine glass resonant mode was 1.9 × 106 using a DC bias voltage of 20 V at about the same pressure in vacuum; the resonant frequency was 5.43 MHz and the lowest motional resistance measured was approximately 17 kΩ using a DC bias voltage of 60 V applied across 2.7 μm actuation gaps. This corresponds to a resonant frequency-quality factor (f-Q) product of 1.02 × 1013, among the highest reported for single crystal silicon microresonators, and on par with the best quartz crystal resonators. The quality factor for the wine glass mode in air was approximately 10,000. © 2009 Elsevier B.V. All rights reserved.

Relevância:

20.00% 20.00%

Publicador:

Resumo:

We report on the experimental characterization of a single crystal silicon square-plate microresonator. The resonator is excited in the square wine glass (SWG) mode at a mechanical resonance frequency of 2.065 MHz. The resonator displays quality factor of 9660 in air and an ultra-high quality factor of Q = 4.05 × 106 in 12 mtorr vacuum. The SWG mode may be described as a square plate that contracts along one axis in the fabrication plane, while simultaneously extending along an orthogonal axis in the same plane. The resonant structure is addressed in a 2-terminal configuration by utilizing equal and opposite drive polarities on surrounding capacitor electrodes, thereby decreasing the motional resistance of the resonator. The resonant micromechanical device has been fabricated in a commercial silicon-on-insulator process through the MEMSCAP foundry utilising a minimum electrostatic gap of 2 μm. © 2008 IEEE.

Relevância:

20.00% 20.00%

Publicador:

Resumo:

Elastodynamic stress intensity factor histories of an unbounded solid containing a semi-infinite plane crack that propagates at a constant velocity under 3-D time-independent combined mode loading are considered. The fundamental solution, which is the response of point loading, is obtained. Then, stress intensity factor histories of a general loading system are written out in terms of superposition integrals. The methods used here are the Laplace transform methods in conjunction with the Wiener-Hopf technique.