K-Ag age of volcanites from underwater rises of the Sea of Okhotsk and the Sea of Japan

New K-Ar datings of Meso-Cenozoic volcanites from the Sea of Japan and the Sea of Okhotsk were obtained. They enabled to reason age of different volcanic complexes. Basalts from volcanic edifices of the Sea of Japan Basin were determined as Middle Miocene - Pliocene (13.1-4.5 Ma) in age, which correlates well with geological evolution of the Sea of Japan. New datings for basalts from the continental slope of the South Primorye (11.1 Ma) confirm their age being similar to volcanites from Neogene basalt plateaus of the South Primorye; they are very similar not only in age but also in mineral and chemical compositions. Datings for rocks from the andesite series of the Northern Yamato Rise (24.7, 21.5 Ma) show that they are coeval with volcanites of the trachyandesite complex; this allows to combine them into one Oligocene - Early Miocene complex. In the Sea of Okhotsk datings of volcanite samples from three complexes were obtained: Cretaceous, Paleogene, and Pliocene-Pleistocene. Cretaceous magmatic rocks make part of basements of large rises in the Sea of Okhotsk, and Paleogene and Pliocene - Pleistocene complexes illustrate stages of Cenozoic tectono-magmatic activation of the region.

Transport and Distribution of Hydroxyl Radicals and Oxygen Atoms from H2O Photodissociation in the Inner Coma of Comet 67P/Churyumov-Gerasimenko

With a combination of the Direct Simulation Monte Carlo (DSMC) calculation and test particle computation, the ballistic transport process of the hydroxyl radicals and oxygen atoms produced by photodissociation of water molecules in the coma of comet 67P/Churyumov-Gerasimenko is modelled. We discuss the key elements and essential features of such simulations which results can be compared with the remote-sensing and in situ measurements of cometary gas coma from the Rosetta mission at different orbital phases of this comet.

Site-controlled Ag nanocrystals grown by molecular beam epitaxy-Towards plasmonic integration technology

We demonstrate site-controlled growth of epitaxial Ag nanocrystals on patterned GaAs substrates by molecular beam epitaxy with high degree of long-range uniformity. The alignment is based on lithographically defined holes in which position controlled InAs quantum dots are grown. The Ag nanocrystals self-align preferentially on top of the InAs quantum dots. No such ordering is observed in the absence of InAs quantum dots, proving that the ordering is strain-driven. The presented technique facilitates the placement of active plasmonic nanostructures at arbitrarily defined positions enabling their integration into complex devices and plasmonic circuits.

Mechanical Characterization of Lead-Free Sn-Ag-Cu Solder Joints by High-Temperature Nanoindentation

The reliability of Pb-free solder joints is controlled by their microstructural constituents. Therefore, knowledge of the solder microconstituents’ mechanical properties as a function of temperature is required. Sn-Ag-Cu lead-free solder alloy contains three phases: a Sn-rich phase, and the intermetallic compounds (IMCs) Cu6Sn5 and Ag3Sn. Typically, the Sn-rich phase is surrounded by a eutectic mixture of β-Sn, Cu6Sn5, and Ag3Sn. In this paper, we report on the Young’s modulus and hardness of the Cu6Sn5 and Cu3Sn IMCs, the β-Sn phase, and the eutectic compound, as measured by nanoindentation at elevated temperatures. For both the β-Sn phase and the eutectic compound, the hardness and Young’s modulus exhibited strong temperature dependence. In the case of the intermetallics, this temperature dependence is observed for Cu6Sn5, but the mechanical properties of Cu3Sn are more stable up to 200°C.

Mechanical characterization of GdBCO/Ag and YBCO single grains fabricated by top-seeded melt growth at 77 and 300 K

YBaCuO and GdBaCuO + 15 wt% Ag large, single-grain, bulk superconductors have been fabricated via the top-seeded, melt-growth (TSMG) process using a generic NdBCO seed. The mechanical behavior of both materials has been investigated by means of three-point bending (TPB) and transversal tensile tests at 77 and 300 K. The strength, fracture toughness and hardness of the samples were studied for two directions of applied load to obtain comprehensive information about the effect of microstructural anisotropy on the macroscopic and microscopic mechanical properties of these technologically important materials. Splitting (Brazilian) tests were carried out on as-melt-processed cylindrical samples following a standard oxygenation process and with the load applied parallel to the growth-facet lines characteristic of the TSMG process. In addition, the elastic modulus of each material was measured by three different techniques and related to the microstructure of each sample using optical microscopy. The results show that both the mechanical properties and the elastic modulus of both YBCO and GdBCP/Ag are improved at 77 K. However, the GdBCO/Ag samples are less anisotropic and exhibit better mechanical behavior due to the presence of silver particles in the bulk, superconducting matrix. The splitting tensile strength was determined at 77 K and both materials were found to exhibit similar behavior, independently of their differences in microstructure.

Ti/Pd/Ag Contacts to n-Type GaAs for High Current Density Devices

The metallization stack Ti/Pd/Ag on n-type Si has been readily used in solar cells due to its low metal/semiconductor specific contact resistance, very high sheet conductance, bondability, long-term durability, and cost-effectiveness. In this study, the use of Ti/Pd/Ag metallization on n-type GaAs is examined, targeting electronic devices that need to handle high current densities and with grid-like contacts with limited surface coverage (i.e., solar cells, lasers, or light emitting diodes). Ti/Pd/Ag (50 nm/50 nm/1000 nm) metal layers were deposited on n-type GaAs by electron beam evaporation and the contact quality was assessed for different doping levels (from 1.3 × 1018 cm−3 to 1.6 × 1019 cm−3) and annealing temperatures (from 300°C to 750°C). The metal/semiconductor specific contact resistance, metal resistivity, and the morphology of the contacts were studied. The results show that samples doped in the range of 1018 cm−3 had Schottky-like I–V characteristics and only samples doped 1.6 × 1019 cm−3 exhibited ohmic behavior even before annealing. For the ohmic contacts, increasing annealing temperature causes a decrease in the specific contact resistance (ρ c,Ti/Pd/Ag ~ 5 × 10−4 Ω cm2). In regard to the metal resistivity, Ti/Pd/Ag metallization presents a very good metal conductivity for samples treated below 500°C (ρ M,Ti/Pd/Ag ~ 2.3 × 10−6 Ω cm); however, for samples treated at 750°C, metal resistivity is strongly degraded due to morphological degradation and contamination in the silver overlayer. As compared to the classic AuGe/Ni/Au metal system, the Ti/Pd/Ag system shows higher metal/semiconductor specific contact resistance and one order of magnitude lower metal resistivity.

Role of adenine functional groups in the recognition of the 3′-splice-site AG during the second step of pre-mRNA splicing

The AG dinucleotide at the 3′ splice sites of metazoan nuclear pre-mRNAs plays a critical role in catalytic step II of the splicing reaction. Previous studies have shown that replacement of the guanine by adenine in the AG (AG → GG) inhibits this step. We find that the second step was even more severely inhibited by cytosine (AG → CG) or uracil (AG → UG) substitutions at this position. By contrast, a relatively moderate inhibition was observed with a hypoxanthine substitution (AG → HG). When adenine was replaced by a purine base (AG → PG) or by 7-deazaadenine (AG → c7AG), little effect on the second step was observed, suggesting that the 6-NH2 and N7 groups do not play a critical role in adenine recognition. Finally, replacement of adenine by 2-aminopurine (AG → 2-APG) had no effect on the second step. Taken together, our results suggest that the N1 group of adenine functions as an essential determinant in adenine recognition during the second step of pre-mRNA splicing.