Les facteurs affectant les taux de réussite des cours d’anglais et de sciences humaines des étudiants dans les programmes de formation technique

A large percentage of Vanier College's technology students do not attain their College degrees within the scheduled three years of their program. A closer investigation of the problem revealed that in many of these cases these students had completed all of their program professional courses but they had not completed all of the required English and/or Humanities courses. Fortunately, most of these students do extend their stay at the college for the one or more semesters required for graduation, although some choose to go on into the workforce without returning to complete the missing English and/or Humanities and without their College Degrees. The purpose of this research was to discover if there was any significant measure of association between a student's family linguistic background, family cultural background, high school average, and/or College English Placement Test results and his or her likelihood of succeeding in his or her English and/or Humanities courses within the scheduled three years of the program. Because of both demographic differences between 'hard' and 'soft' technologies, including student population, more specifically gender ratios and student average ages in specific programs; and program differences, including program writing requirements and types of practical skill activities required; in order to have a more uniform sample, the research was limited to the hard technologies where students work hands-on with hardware and/or computers and tend to have overall low research and writing requirements. Based on a review of current literature and observations made in one of the hard technology programs at Vanier College, eight research questions were developed. These questions were designed to examine different aspects of success in the English and Humanities courses such as failure and completion rates and the number of courses remaining after the end of the fifth semester and as well examine how the students assessed their ability to communicate in English. The eight research questions were broken down into a total of 54 hypotheses. The high number of hypotheses was required to address a total of seven independent variables: primary home language, high school language of instruction, student's place of birth (Canada, Not-Canada), student's parents' place of birth (Both-born-in-Canada, Not-both-born-in-Canada), high school averages and English placement level (as a result of the College English Entry Test); and eleven dependent variables: number of English completed, number of English failed, whether all English were completed by the end of the 5th semester (yes, no), number of Humanities courses completed, number of Humanities courses failed, whether all the Humanities courses were completed by the end of the 5th semester (yes, no), the total number of English and Humanities courses left, and the students' assessments of their ability to speak, read and write in English. The data required to address the hypotheses were collected from two sources, from the students themselves and from the College. Fifth and sixth semester students from Building Engineering Systems, Computer and Digital Systems, Computer Science and Industrial Electronics Technology Programs were surveyed to collect personal information including family cultural and linguistic history and current language usages, high school language of instruction, perceived fluency in speaking, reading and writing in English and perceived difficulty in completing English and Humanities courses. The College was able to provide current academic information on each of the students, including copies of college program planners and transcripts, and high school transcripts for students who attended a high school in Quebec. Quantitative analyses were done on the data using the SPSS statistical analysis program. Of the fifty-four hypotheses analysed, in fourteen cases the results supported the research hypotheses, in the forty other cases the null hypotheses had to be accepted. One of the findings was that there was a strong significant association between a student's primary home language and place of birth and his or her perception of his or her ability to communicate in English (speak, read, and write) signifying that both students whose primary home language was not English and students who were not born in Canada, considered themselves, on average, to be weaker in these skills than did students whose primary home language was English. Although this finding was noteworthy, the two most significant findings were the association found between a student's English entry placement level and the number of English courses failed and the association between the parents' place of birth and the student's likelihood of succeeding in both his or her English and Humanities courses. According to the research results, the mean number of English courses failed, on average, by students placed in the lowest entry level of College English was significantly different from the number of English courses failed by students placed in any of the other entry level English courses. In this sample students who were placed in the lowest entry level of College English failed, on average, at least three times as many English courses as those placed in any of the other English entry level courses. These results are significant enough that they will be brought to the attention of the appropriate College administration. The results of this research also appeared to indicate that the most significant determining factor in a student's likelihood of completing his or her English and Humanities courses is his or her parents' place of birth (both-born-in-Canada or not-both-born-in-Canada). Students who had at least one parent who was not born in Canada, would, on average, fail a significantly higher number of English courses, be significantly more likely to still have at least one English course left to complete by the end of the 5th semester, fail a significantly higher number of Humanities courses, be significantly more likely to still have at least one Humanities course to complete by the end of the 5th semester and have significantly more combined English and Humanities courses to complete at the end of their 5th semester than students with both parents born in Canada. This strong association between students' parents' place of birth and their likelihood of succeeding in their English and Humanities courses within the three years of their program appears to indicate that acculturation may be a more significant factor than either language or high school averages, for which no significant association was found for any of the English and Humanities related dependent variables. Although the sample size for this research was only 60 students and more research needs to be conducted in this area, to see if these results are supported with other groups within the College, these results are still significant. If the College can identify, at admission, the students who will be more likely to have difficulty in completing their English and Humanities courses, the College will now have the opportunity to intercede during or before the first semester, and offer these students the support they require in order to increase their chances of success in their education, whether it be classes or courses designed to meet their specific needs, special mentoring, tutoring or other forms of support. With the necessary support, the identified students will have a greater opportunity of successfully completing their programs within the scheduled three years, while at the same time the College will have improved its capacity to meeting the needs of its students.

Topological insulating phases from two-dimensional nodal loop semimetals

Starting from a minimal model for a two-dimensional nodal loop semimetal, we study the effect of chiral mass gap terms. The resulting Dirac loop anomalous Hall insulator’s Chern number is the phase-winding number of the mass gap terms on the loop.We provide simple lattice models, analyze the topological phases, and generalize a previous index characterizing topological transitions. The responses of the Dirac loop anomalous Hall and quantum spin Hall insulators to a magnetic field’s vector potential are also studied both in weak- and strong-field regimes, as well as the edge states in a ribbon geometry.

Nanomechanical characterization of soft bioelectronic interfaces via modeling-informed atomic force microscopy

The field of bioelectronics involves the use of electrodes to exchange electrical signals with biological systems for diagnostic and therapeutic purposes in biomedical devices and healthcare applications. However, the mechanical compatibility of implantable devices with the human body has been a challenge, particularly with long-term implantation into target organs. Current rigid bioelectronics can trigger inflammatory responses and cause unstable device functions due to the mechanical mismatch with the surrounding soft tissue. Recent advances in flexible and stretchable electronics have shown promise in making bioelectronic interfaces more biocompatible. To fully achieve this goal, material science and engineering of soft electronic devices must be combined with quantitative characterization and modeling tools to understand the mechanical issues at the interface between electronic technology and biological tissue. Local mechanical characterization is crucial to understand the activation of failure mechanisms and optimizing the devices. Experimental techniques for testing mechanical properties at the nanoscale are emerging, and the Atomic Force Microscope (AFM) is a good candidate for in situ local mechanical characterization of soft bioelectronic interfaces. In this work, in situ experimental techniques with solely AFM supported by interpretive models for the characterization of planar and three-dimensional devices suitable for in vivo and in vitro biomedical experimentations are reported. The combination of the proposed models and experimental techniques provides access to the local mechanical properties of soft bioelectronic interfaces. The study investigates the nanomechanics of hard thin gold films on soft polymeric substrates (Poly(dimethylsiloxane) PDMS) and 3D inkjet-printed micropillars under different deformation states. The proposed characterization methods provide a rapid and precise determination of mechanical properties, thus giving the possibility to parametrize the microfabrication steps and investigate their impact on the final device.

Nonlinear Dynamics of Multiple Quantum Well Lasers: Chaos and Multistability

This thesis presents analytical and numerical results from studies based on the multiple quantum well laser rate equation model. We address the problem of controlling chaos produced by direct modulation of laser diodes. We consider the delay feedback control methods for this purpose and study their performance using numerical simulation. Besides the control of chaos, control of other nonlinear effects such as quasiperiodicity and bistability using delay feedback methods are also investigated.A number of secure communication schemes based on synchronization of chaos semiconductor lasers have been successfully demonstrated theoretically and experimentally. The current investigations in these field include the study of practical issues on the implementations of such encryption schemes. We theoretically study the issues such as channel delay, phase mismatch and frequency detuning on the synchronization of chaos in directly modulated laser diodes. It would be helpful for designing and implementing chaotic encryption schemes using synchronization of chaos in modulated semiconductor lasers.

Optimum phase noise reduction and repetition rate tuning in quantum-dot mode-locked lasers

Competing approaches exist, which allow control of phase noise and frequency tuning in mode-locked lasers, but no judgement of pros and cons based on a comparative analysis was presented yet. Here, we compare results of hybrid mode-locking, hybrid mode-locking with optical injection seeding, and sideband optical injection seeding performed on the same quantum dot laser under identical bias conditions. We achieved the lowest integrated jitter of 121 fs and a record large radio-frequency (RF) tuning range of 342 MHz with sideband injection seeding of the passively mode-locked laser. The combination of hybrid mode-locking together with optical injection-locking resulted in 240 fs integrated jitter and a RF tuning range of 167 MHz. Using conventional hybrid mode-locking, the integrated jitter and the RF tuning range were 620 fs and 10 MHz, respectively. © 2014 AIP Publishing LLC.

Noise in gallium nitride-based quantum well structures used for nanometer devices in the frequency range 1 Hz--3 Mhz and temperature range 77K--324K

Electronic noise has been investigated in AlxGa1−x N/GaN Modulation-Doped Field Effect Transistors (MODFETs) of submicron dimensions, grown for us by MBE (Molecular Beam Epitaxy) techniques at Virginia Commonwealth University by Dr. H. Morkoç and coworkers. Some 20 devices were grown on a GaN substrate, four of which have leads bonded to source (S), drain (D), and gate (G) pads, respectively. Conduction takes place in the quasi-2D layer of the junction (xy plane) which is perpendicular to the quantum well (z-direction) of average triangular width ∼3 nm. A non-doped intrinsic buffer layer of ∼5 nm separates the Si-doped donors in the AlxGa1−xN layer from the 2D-transistor plane, which affords a very high electron mobility, thus enabling high-speed devices. Since all contacts (S, D, and G) must reach through the AlxGa1−xN layer to connect internally to the 2D plane, parallel conduction through this layer is a feature of all modulation-doped devices. While the shunting effect may account for no more than a few percent of the current IDS, it is responsible for most excess noise, over and above thermal noise of the device. ^ The excess noise has been analyzed as a sum of Lorentzian spectra and 1/f noise. The Lorentzian noise has been ascribed to trapping of the carriers in the AlxGa1−xN layer. A detailed, multitrapping generation-recombination noise theory is presented, which shows that an exponential relationship exists for the time constants obtained from the spectral components as a function of 1/kT. The trap depths have been obtained from Arrhenius plots of log (τT2) vs. 1000/T. Comparison with previous noise results for GaAs devices shows that: (a) many more trapping levels are present in these nitride-based devices; (b) the traps are deeper (farther below the conduction band) than for GaAs. Furthermore, the magnitude of the noise is strongly dependent on the level of depletion of the AlxGa1−xN donor layer, which can be altered by a negative or positive gate bias VGS. ^ Altogether, these frontier nitride-based devices are promising for bluish light optoelectronic devices and lasers; however, the noise, though well understood, indicates that the purity of the constituent layers should be greatly improved for future technological applications. ^

Thermal lens and heat generation of Nd : YAG lasers operating at 1.064 and 1.34 mu m

We report on a simple and accurate method for determination of thermo-optical and spectroscopic parameters (thermal diffusivity, temperature coefficient of the optical path length change, pump and fluorescence quantum efficiencies, thermal loading, thermal lens focal length, etc) of relevance in the thermal lensing of end-pumped neodymium lasers operating at 1.06- and 1.3-mu m channels. The comparison between thermal lensing observed in presence and absence of laser oscillation has been used to elucidate and evaluate the contribution of quantum efficiency and excited sate absorption processes to the thermal loading of Nd: YAG lasers. (c) 2008 Optical Society of America.

Quantum symmetries and the Weyl–Wigner product of group representations

In the usual formulation of quantum mechanics, groups of automorphisms of quantum states have ray representations by unitary and antiunitary operators on complex Hilbert space, in accordance with Wigner's theorem. In the phase-space formulation, they have real, true unitary representations in the space of square-integrable functions on phase space. Each such phase-space representation is a Weyl–Wigner product of the corresponding Hilbert space representation with its contragredient, and these can be recovered by 'factorizing' the Weyl–Wigner product. However, not every real, unitary representation on phase space corresponds to a group of automorphisms, so not every such representation is in the form of a Weyl–Wigner product and can be factorized. The conditions under which this is possible are examined. Examples are presented.

Atoms in an amplitude-modulated standing wave - dynamics and pathways to quantum chaos

Cold rubidium atoms are subjected to an amplitude-modulated far-detuned standing wave of light to form a quantum-driven pendulum. Here we discuss the dynamics of these atoms. Phase space resonances and chaotic transients of the system exhibit dynamics which can be useful in many atom optics applications as they can be utilized as means for phase space state preparation. We explain the occurrence of distinct peaks in the atomic momentum distribution, analyse them in detail and give evidence for the importance of the system for quantum chaos and decoherence studies.

Atom lasers, coherent states, and coherence II. Maximally robust ensembles of pure states

As discussed in the preceding paper [Wiseman and Vaccaro, preceding paper, Phys. Rev. A 65, 043605 (2002)], the stationary state of an optical or atom laser far above threshold is a mixture of coherent field states with random phase, or, equivalently, a Poissonian mixture of number states. We are interested in which, if either, of these descriptions of rho(ss) as a stationary ensemble of pure states, is more natural. In the preceding paper we concentrated upon the question of whether descriptions such as these are physically realizable (PR). In this paper we investigate another relevant aspect of these ensembles, their robustness. A robust ensemble is one for which the pure states that comprise it survive relatively unchanged for a long time under the system evolution. We determine numerically the most robust ensembles as a function of the parameters in the laser model: the self-energy chi of the bosons in the laser mode, and the excess phase noise nu. We find that these most robust ensembles are PR ensembles, or similar to PR ensembles, for all values of these parameters. In the ideal laser limit (nu=chi=0), the most robust states are coherent states. As the phase noise or phase dispersion is increased through nu or the self-interaction of the bosons chi, respectively, the most robust states become more and more amplitude squeezed. We find scaling laws for these states, and give analytical derivations for them. As the phase diffusion or dispersion becomes so large that the laser output is no longer quantum coherent, the most robust states become so squeezed that they cease to have a well-defined coherent amplitude. That is, the quantum coherence of the laser output is manifest in the most robust PR ensemble being an ensemble of states with a well-defined coherent amplitude. This lends support to our approach of regarding robust PR ensembles as the most natural description of the state of the laser mode. It also has interesting implications for atom lasers in particular, for which phase dispersion due to self-interactions is expected to be large.

Atom lasers, coherent states, and coherence. I. Physically realizable ensembles of pure states

A laser, be it an optical laser or an atom laser, is an open quantum system that produces a coherent beam of bosons (photons or atoms, respectively). Far above threshold, the stationary state rho(ss) of the laser mode is a mixture of coherent-field states with random phase, or, equivalently, a Poissonian mixture of number states. This paper answers the question: can descriptions such as these, of rho(ss) as a stationary ensemble of pure states, be physically realized? Here physical realization is as defined previously by us [H. M. Wiseman and J. A. Vaccaro, Phys. Lett. A 250, 241 (1998)]: an ensemble of pure states for a particular system can be physically realized if, without changing the dynamics of the system, an experimenter can (in principle) know at any time that the system is in one of the pure-state members of the ensemble. Such knowledge can be obtained by monitoring the baths to which the system is coupled, provided that coupling is describable by a Markovian master equation. Using a family of master equations for the (atom) laser, we solve for the physically realizable (PR) ensembles. We find that for any finite self-energy chi of the bosons in the laser mode, the coherent-state ensemble is not PR; the closest one can come to it is an ensemble of squeezed states. This is particularly relevant for atom lasers, where the self-energy arising from elastic collisions is expected to be large. By contrast, the number-state ensemble is always PR. As the self-energy chi increases, the states in the PR ensemble closest to the coherent-state ensemble become increasingly squeezed. Nevertheless, there are values of chi for which states with well-defined coherent amplitudes are PR, even though the atom laser is not coherent (in the sense of having a Bose-degenerate output). We discuss the physical significance of this anomaly in terms of conditional coherence (and hence conditional Bose degeneracy).

Positive-P and Wigner representations for quantum-optical systems with nonorthogonal modes

We generalize the basic concepts of the positive-P and Wigner representations to unstable quantum-optical systems that are based on nonorthogonal quasimodes. This lays the foundation for a quantum description of such systems, such as, for example an unstable cavity laser. We compare both representations by calculating the tunneling times for an unstable resonator optical parametric oscillator.

Electronic couplings and on-site energies for hole transfer in DNA: systematic quantum mechanical/molecular dynamic study

The electron hole transfer (HT) properties of DNA are substantially affected by thermal fluctuations of the π stack structure. Depending on the mutual position of neighboring nucleobases, electronic coupling V may change by several orders of magnitude. In the present paper, we report the results of systematic QM/molecular dynamic (MD) calculations of the electronic couplings and on-site energies for the hole transfer. Based on 15 ns MD trajectories for several DNA oligomers, we calculate the average coupling squares 〈 V2 〉 and the energies of basepair triplets X G+ Y and X A+ Y, where X, Y=G, A, T, and C. For each of the 32 systems, 15 000 conformations separated by 1 ps are considered. The three-state generalized Mulliken-Hush method is used to derive electronic couplings for HT between neighboring basepairs. The adiabatic energies and dipole moment matrix elements are computed within the INDO/S method. We compare the rms values of V with the couplings estimated for the idealized B -DNA structure and show that in several important cases the couplings calculated for the idealized B -DNA structure are considerably underestimated. The rms values for intrastrand couplings G-G, A-A, G-A, and A-G are found to be similar, ∼0.07 eV, while the interstrand couplings are quite different. The energies of hole states G+ and A+ in the stack depend on the nature of the neighboring pairs. The X G+ Y are by 0.5 eV more stable than X A+ Y. The thermal fluctuations of the DNA structure facilitate the HT process from guanine to adenine. The tabulated couplings and on-site energies can be used as reference parameters in theoretical and computational studies of HT processes in DNA

Fabrication of a quantum well heterostructure based on plasma polymerized aniline and its characterization using STM/STS

Two-dimensional electronic systems play a crucial role in modern electronics and offer a multitude of opportunities to study the fundamental phenomena at low dimensional physics. A quantum well heterostructure based on polyaniline (P) and iodine doped polyaniline (I) thin films were fabricated using radio frequency plasma polymerization on indium tin oxide coated glass plate. Scanning probe microscopy and scanning electron microscopy studies were employed to study the morphology and roughness of the polymer thin films. Local electronic density of states (LDOS) of the P–I–P heterostructures is probed using scanning tunnelling spectroscopy (STS). A step like LDOS is observed in the P–I–P heterostructure and is attributed to the quantum well confinement of electrons in the polymer heterostructure.