Heating mechanism of self-interaction of surface polaritons at n-type semiconductor-metal interface

The influence of electron heating in the high-frequency surface polariton (SP) field on the dispersion properties of the SPs considered is investigated. High frequency SPs propagate at the interface between an n-type semiconductor with finite electron pressure, and a metal. The nonlinear dispersion relation for the SPs is derived and investigated.

Plasma-Aided Nanofabrication : From Plasma Sources to Nanoassembly

In this single work to cover the use of plasma as nanofabrication tool in sufficient depth internationally renowned authors with much experience in this important method of nanofabrication look at reactive plasma as a nanofabrication tool, plasma production and development of plasma sources, as well as such applications as carbon-based nanostructures, low-dimensional quantum confinement structures and hydroxyapatite bioceramics. Written principally for solid state physicists and chemists, materials scientists, and plasma physicists, the book concludes with the outlook for such applications. © 2007 Wiley-VCH Verlag GmbH & Co. KGaA.

Self-interaction of surface polaritons at the narrow-gap n-type semiconductor metal interface

The non-linear self-interaction of the potential surface polaritons (SP) which is due to the free carriers dispersion law where nonparabolicity is studied. The SP propagate at the interface between n-type semiconductor and a metal. The self interaction of the SP is shown to be different in semiconductors with normal and inverse zone structures. The results of the SP field envelope evolution are given. The obtained nonlinear frequency shift has been compared with shifts which are due to another self-interaction mechanisms. This comparison shows that the nonlinear self-interaction mechanism, which is due to free carriers spectrum nonparabolicity, is especially significant in narrow-gap semiconductor materials.