EFFECTIVE-MASS THEORY FOR SUPERLATTICES GROWN ON (11N)-ORIENTED SUBSTRATES

An effective-mass formulation for superlattices grown on (11N)-oriented substrates is given. It is found that, for GaAs/AlxGa1-xAs superlattices, the hole subband structure and related properties are sensitive to the orientation because of the large anisotropy of the valence band. The energy-level positions for the heavy hole and the optical transition matrix elements for the light hole apparently change with orientation. The heavy- and light-hole energy levels at k parallel-to = 0 can be calculated separately by taking the classical effective mass in the growth direction. Under a uniaxial stress along the growth direction, the energy levels of the heavy and light holes shift down and up, respectively; at a critical stress, the first heavy- and light-hole energy levels cross over. The energy shifts caused by the uniaxial stress are largest for the (111) case and smallest for the (001) case. The optical transition matrix elements change substantially after the crossover of the first heavy- and light-hole energy has occurred.

Some properties of gallium nitride films grown on (0001) oriented sapphire substrates by gas source molecular beam epitaxy

The Raman and photoreflectivity spectra of gallium nitride (GaN) films grown on (0001) oriented sapphire substrates by gas source molecular beam epitaxy (GSMBE) have been investigated. The Raman spectra showed the presence of the E-2(high) mode and a shift in the wavenumber of this mode with respect to the GaN epilayer thickness. The Raman scattering results suggest the presence of stress due to lattice and thermal expansion misfit in the films, and also indicate that the buffer layer play an important role in the deposition of high quality GaN layers. The residual stress changes from tensile to compressive as the epilayer thickness increases. Samples subjected to anneal cycles showed an increase in the mobility due probably to stress relaxation as suggested by an observed shift in the E-2(high) mode in the Raman spectra after annealing.

Structural ordering and interface morphology in symmetrically strained (GaIn)As/Ga(PAs) superlattices grown on off-oriented GaAs(100)

In this work we investigate the structural properties of symmetrically strained (GaIn)As/GaAs/Ga(PAs)/GaAs superlattices by means of x-ray diffraction, reciprocal-space mapping, and x-ray reflectivity. The multilayers were grown by metalorganic vapor-phase epitaxy on (001) GaAs substrates intentionally off-oriented towards one of the nearest [110] directions. High-resolution triple-crystal reciprocal-space maps recorded for different azimuth angles in the vicinity of the (004) Bragg diffraction clearly show a double periodicity of the x-ray peak intensity that can be ascribed to a lateral and a vertical periodicity occurring parallel and perpendicular to the growth surface. Moreover, from the intensity modulation of the satellite peaks, a lateral-strain gradient within the epilayer unit cell is found, varying from a tensile to a compressive strain. Thus, the substrate off-orientation promotes a lateral modulation of the layer thickness (ordered interface roughness) and of the lattice strain, giving rise to laterally ordered macrosteps. In this respect, contour maps of the specular reflected beam in the vicinity of the (000) reciprocal lattice point were recorded in order to inspect the vertical and lateral interface roughness correlation, A semiquantitative analysis of our results shows that the interface morphology and roughness is greatly influenced by the off-orientation angle and the lateral strain distribution. Two mean spatial wavelengths can be determined, one corresponding exactly to the macrostep periodicity and the other indicating a further interface waviness along the macrosteps. The same spatial periodicities were found on the surface by atomic-force-microscopy images confirming the x-ray results and revealing a strong vertical correlation of the interfaces up to the outer surface.

Aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis

A polycrystalline silicon thin film was fabricated on glass substrate by means of aluminum induced crystallization (AIC). Al and alpha-Si layers were deposited by magnetron sputtering respectively and annealed at 480A degrees C for 1 h to realize layer exchange. The polycrystalline silicon thin film was continuous and strongly (111) oriented. By analyzing the structure variation of the oxidation membrane and lattice mismatch between gamma-Al2O3 and Si, it was concluded that aluminum promoted the formation of (111) oriented silicon nucleus by controlling the orientation of gamma-Al2O3, which was formed at the early stage of annealing.

Effects of oriented substrates on cell morphology, the cell cycle, and the cytoskeleton in Ros 17/2.8 cells

Absence of gravity or microgravity influences the cellular functions of bone forming osteoblasts. The underlying mechanism, however, of cellular sensing and responding to the gravity vector is poorly understood. This work quantified the impact of vector-directional gravity on the biological responses of Ros 17/2.8 cells grown on upward-, downward- or edge-on-oriented substrates. Cell morphology and nuclear translocation, cell proliferation and the cell cycle, and cytoskeletal reorganization were found to vary significantly in the three orientations. All of the responses were duration-dependent. These results provide a new insight into understanding how osteoblasts respond to static vector-directional gravity.

a dynamic model to handle defect-oriented processes

Tongji Univ, Inst Dev Study, Syst Engn Soc China, Comm Syst Dynam, Syst Dynam Soc, China Chapter, Shanghai Inst Foreign Trade, Syst Dynam Soc, Chapters Asia Pacific Area

Synthesis, structure, and optical properties of a contorted (110)-oriented layered hybrid perovskite: C3H11SN3PbBr4

The < 110 >-oriented perovskite is very rare in the hybrid perovskites family. In this work, an unusual layered < 110 >-oriented hybrid perovskite, which is stabilized by a special organic ligand, 2-(aminoethyl)isothiourea, has been obtained. This ligand combines a primary amine and a formamidine on the two ends of one molecule. Introduction of the special ligand brings about contorted inorganic sheets in the hybrid perovskite structure. The optical properties of the new < 110 >-oriented perovskite were studied.

Control for oriented growth of large size KCl crystals by the competition between spontaneous and induced nucleation/growth on a Langmuir-Blodgett film

Langmuir-Blodgett (LB) film of stearic acid was used as template to induce the nucleation and growth of KCl crystals when the KCl solution was cooled from 50 to 25 degrees C. When the LB film template was vertically dipped into the solution, only induced crystals with (1 1 0) orientation were formed. However, if the template was horizontally placed into solutions, both the induced nuclei at the solution/film interface and spontaneous nuclei formed in solution were simultaneously absorbed onto the LB film, and then grew further to form crystals. X-ray diffraction (XRD) patterns and optical microscopy images showed that the orientation and morphology of the crystals were controlled properly by changing the orientation and position of the LB films in the solutions.

"Dual-Parallel-Channel" Shape-Gradient Surfaces: Toward Oriented and Reversible Movement of Water Droplets

In this paper, we prepared "dual-parallel-channel" shape-gradient surfaces, on which water droplets can reversibly and orientedly move between two adjacent pools under the guidance of an external voltage. Furthermore, it is found that the motion speed is governed by several parameters, including bath condition, gradient angle, and the working voltage. In this self-transportation process of water droplets, the external voltage works like a traffic light, which can give "moving", "stopping", "turning" and "straight-going" signals to the Water droplets.

Oriented growth and luminescence of ZnO : Eu films prepared by sol-gel process

A series of Eu3+-doped ZnO films have been prepared by a sol-gel method. These films were characterized by X-ray diffraction (XRD) and photoluminecent spectra (PL). Effects of synthetic parameters, such as annealing atmosphere, temperature and concentration of doped ions, on the highly oriented crystal growth were studied in detail. The crystalline structures of films annealed in vacuum have a wurtzite symmetry with highly c-axis orientation. A characteristic D-5(0) -> F-7(J)(J = 1, 2, 3 and 4) red emission is observed due to energy transfer from the ZnO host to the doped Eu3+ in the c-oriented ZnO films.

Highly oriented tunable wrinkling in polymer bilayer films confined with a soft mold induced by water vapor

The authors report the formation of highly oriented wrinkling on the surface of the bilayer [polystyrene (PS)/poly(vinyl pyrrolidone) (PVP)] confined by a polydimethylsiloxane (PDMS) mold in a water vapor environment. When PVP is subjected to water vapor, the polymer loses its mechanical rigidity and changes to a viscous state, which leads to a dramatic change in Young's modulus. This change generates the amount of strain in the bilayer to induce the wrinkling. With a shape-controlled mold, they can get the ordered wrinkles perfectly perpendicular or leaned 45 S to the channel orientation of the mold because the orientation of the resultant force changes with the process of water diffusion which drives the surface to form the wrinkling. Additionally, they can get much smaller wrinkles than the stripe spacing of PDMS mold about one order. The wrinkle period changes with the power index of about 0.5 for various values of the multiplication product of the film thicknesses of the two layers, namely, lambda similar to (h(PS)h(PVP))(1/2).