Influence of GaAsP insertion layers on performance of InGaAsP/InGaP/AlGaAs quantum-well laser

We report on the use of very thin GaAsP insertion layers to improve the performance of an InGaAsP/InGaP/AlGaAs single quantum-well laser structure grown by metal organic chemical vapour deposition. Compared to the non-insertion structure, the full width at half maximum of photoluminescence spectrum of the insertion structure measured at room temperature is decreased from 47 to 38 nm indicating sharper interfaces. X-ray diffraction shows that the GaAsP insertion layers between AlGaAs and InGaP compensates for the compressive strain to improve the total interface. The laser performance of the insertion structure is significantly improved as compared with the counterpart without the insertion layers. The threshold current is decreased from 560 to 450mA while the slope efficiency is increased from 0.61 to 0.7W/A and the output power is increased from 370 to 940mW. The slope efficiency improved is very high for the devices without coated facets. The improved laser performance is attributed to the suppression of indium carry-over due to the use of the GaAsP insertion layers.

Photocurrent response in a double barrier structure with quantum dots-quantum well inserted in central well

We report the photocurrent response in a double barrier structure with quantum dots-quantum well inserted in central well. When this quantum dots-quantum well hybrid heterostructure is biased beyond + 1 or -I V, the photocurrent response manifests itself as a steplike enhancement, increasing linearly with the light intensity. Most probably, at proper bias condition, the pulling down of the X minimum of GaAs at the outgoing interface of the emitter barrier by the photovoltaic effect in GaAs QW will initiate the r,-X-X tunneling at much lower bias as compared with that in the dark. That gives rise to the observed photocurrent response. (c) 2006 Elsevier B.V. All rights reserved.

Peculiar photocurrent response due to Gamma-X coupling in a GaAs/AlAs heterostructure

Peculiar current jumps and hysteresis in current-voltage curves are reported in an illuminated heterostructure consisting basically of a thick AlAs layer and a narrow GaAs quantum well. These novel features come from the photon-assisted transfer of electron-hole pairs and the resultant charge polarization in the structure, mainly caused by the resonant Gamma-X coupling at the heterointerfaces. Using the transfer-matrix method, the simulated current density-voltage curve reproduces the main features of the experimental observations in the case where the influence of resonant Gamma-X coupling at the heterointerfaces is included, further confirming the physical mechanism involved. The structure presented here may be used as a new type of photonic memory cell and also as an optically controlled switch.

Capacitance-voltage spectroscopy of In0.5Ga0.5As self-assembled quantum dots in double quantum wells under selective photo-excitation

Selectively photo-excited C-V spectroscopy has been measured in an In0.5Ga0.5As quantum dots (QDs)-embedded, three barrier-two well heterostructure. By comparing with a theoretical capacitance model, the pure capacitive contribution from In0.5Ga0.5As QDs, due to tunnelling coupling between In0.5Ga0.5As QDs and In0.18Ga0.82As quantum well, has been used to obtain the density of charges from photo-excited In0.5Ga0.5As QDs in a very straightforward manner.

Photon-storage in optical memory cells based on a semiconductor quantum dot-quantum well hybrid structure

We report a new type of photonic memory cell based on a semiconductor quantum dot (QD)-quantum well (QW) hybrid structure, in which photo-generated excitons can be decomposed into separated electrons and holes, and stored in QW and QDs respectively. Storage and retrieval of photonic signals are verified by time-resolved photoluminescence experiments. A storage time in excess of 100ms has been obtained at a temperature of 10 K while the switching speed reaches the order of ten megahertz.

Epitaxial growth and characterization of SiC on C-plane sapphire substrates by ammonia nitridation

The growth of SiC epilayers on C-face (0 0 0 1) sapphire (alpha-Al2O3) has been performed using CVD method. We found that the quality of SiC epilayers has been improved through the nitridation of substrates by exposing them to ammonia ambient, as compared to growth on bare sapphire substrates. The single crystallinity of these layers was verified by XRD and double crystal XRD measurements. Atomic force microscopy was used to evaluate the surface morphology. Infrared reflectivity and Raman scattering measurement were carried out to investigate the phonon modes in the grown SiC. Detailed Raman analysis identified the 6H nature of the as-grown SiC films. (C) 2002 Elsevier Science B.V. All rights reserved.

Direct Wafer Bonding Technology employing vacuum-cavity pre-bonding

A novel low temperature direct wafer bonding technology employing vacuum-cavity pre-bonding is proposed and applied in bonding of InGaAs/Si couple wafers under 300 degrees C and InP/GaAs couple wafers under 350 degrees C. Aligning accuracy of 0.5 mu m is achieved. During wafer bonding process the pressure on the couple wafers is 10MPa. The interface energy is sufficiently high to allow thinning of the wafers down from 350um to about 100um. And the tensile strength test indicates the bonding energy of bonded samples is about equal to the bonded samples at 550 degrees C.

Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth

Performing an event-based continuous kinetic Monte Carlo simulation, we investigate the modulated effect induced by the dislocation on the substrate to the growth of semiconductor quantum dots (QDs). The relative positions between the QDs and the dislocations are studied. The stress effects to the growth of the QDs are considered in simulation. The simulation results are compared with the experiment and the agreement between them indicates that this simulation is useful to study the growth mode and the atomic kinetics during the growth of the semiconductor QDs. (c) 2006 Elsevier Ltd. All rights reserved.

Petri网可达性的综合判定法

Petri网标识的可达性判定问题是进行Petri网分析的基础,而传统的判定方法并不能确保所得结果的可靠性.在揭示Petri网可达性问题的实质之后,讨论了在标识图的同一连通域内标识可达性的判定问题,进而在分析相关原理的基础上提出了一种有效判定Petri网标识可达性的综合判定法.此判定方法综合多种传统判定方法的优点,结合Gr鯾ner基理论,确保了对Petri网标识可达性进行判定所得结果的可靠性.

A new method for spectrum reproduction and interferogram processing

On the basis of researchon the theory and mathe matics of interference data collection of the spatially modulated polarization interference imaging spectrometer designed by us, this paper mainly analyses and compares three different methods of spectrum reconstruction and interferogram processing. Specially, the authors introduce the nonparametric model of Music algorithm which is maturely used in power spectrum estimation into the spectrum reconstruction processing for the first time. This method prodigiously improves the resolution of reproduced spectrum, and provides a better math matic model for the improvement of resolving power in spectrum reproduction.

确定~(137)Cs背景值所需的采样点数与采样面积

137Cs背景值的确定是利用核示踪技术研究土壤侵蚀的前提和根本,直接关系到侵蚀速率计算的准确与否。而大部分研究对137Cs背景值的确定均采取随机采样,没有统一的采样点数与确定的采样面积。本研究利用网格加密采样法,对未扰动地和长期耕种且未平整的农耕地各两块样地的137Cs背景值空间变异进行了分析,结果表明:在未扰动地与农耕地采样地块,137Cs采样点数与背景值空间变异系数都存在指数回归关系;在未扰动地块137Cs背景值存在较大空间变异性,且随着网格面积的扩大137Cs空间变异系数表现为增加趋势,在0.25m2范围内选取最少11个样点才能满足试验精度;在农耕地采样地块,因长期的耕种作用使得137Cs在耕层中混合相对均匀,137Cs背景值空间变异性显著变小,最少选取7个样点就能满足试验精度,且不受采样面积的影响。

铝及其形态的分析方法

我在研究生期间所做的论文为铝及其形态的分析方法。为什么要做这项工作呢？许多研究表明：①铝是天然水和土壤中十分重要的pH缓冲剂，②铝能影响土壤中象磷和有机碳这些重要元素的环比，③铝对动物、植物及人体都有害，这些过程都与铝的形成有关，因此弄清铝的形态及测定各种形态的浓度十分有意义。由于铝在水中含量较低，且水中含有其它共存离子，因此围绕铝形态的分析，首先建立了一种抗干扰，高灵敏的方法来测定总铝量及各种形态铝的浓度。利用铬天青s试剂测定铝的方法很多，铝与铬天青s能形成红色的二元配合物，但其灵敏度低，稳定性差。近年来人们大多采用铝－铬天青S－表面活性剂三元体系，提高了灵敏度和选择性。本文研究了铝－铬天青S－溴代＋元烷基吡啶三元显色体系，试验确定了三元显色体系的最佳显色条件。其条件如下：实验结果及选定的条件 影响因素 实验结果 选定条件 显色酸度 pH 5.5～7.5 6.0 1 * 10~(-4)M CAS溶剂用量 0.3～0.5ml 0.4ml 5 * ~(-3)M CPB的用量 0.5～1.5ml 0.9ml此三元体系十分稳定，在常温下，显色液放置40分钟才能基本发色完全，其吸光度在24小时内无变化。实验方法为于50ml容量瓶中，加入铝标准液，然后加0.4ml 1 * 10~(-4)M CAS溶液，0.9ml CPB 5 * 10~(-3)M溶液，加入用盐酸调好的pH≈6的六次甲基四胺缓冲液5ml，用水定容，放置40分钟，于644nm处，1cm比色池，以试剂空白作参电测定吸光度。当铝量为0～5ug/50ml时，有色配合物遵从电尔定律，其线性相关系数为0.9999，表观摩尔吸光系数ε_(644nm) = 1.43 * 10~5 l·mol~(-1)·cm~(-1)。本法做了三十六种共存离子的影响实验，多数常见离子不干扰铝的测定，此法主要用于水中铝的测定，家Gr~(3+), Ln~(3+), Ti~(4+), Sn~(4+), Be~(2+)这些离子对铝离子测定的干扰尽管很大，但它们在水中的含量很低，因此可以不考察其干扰作用，F~-和PO_4~(3-)都易与铝离子形成配合物，但水中F~-，PO_4~(≡)含量很小，一般情况下不干扰铝的测定。本法主要考虑了Cu~(2+), Fe~(3+)对铝测定的干扰，用硫脲掩蔽Cu~(2+), 用抗坏血酸掩蔽Fe~(3+), 得到了满意的结果。应用本法测定实际水样，五次测定结果的相对标准偏差为5％，用标准加入法测得其回收率在92～104％之间。由以上工作可以看出，由于CPB的加入，使得Al-CAS-CPB三元体系的摩尔吸光系数较Al-CAS二元配合物的大3.5 倍，最大吸收波长也产生了较大的红移，因此，有必要进一步探讨一下此三元体系的反应机理。目前，阳离子表面活性剂对显色反应作用机理的研究较多，但尚没取得一致的见解，这些研究结果可以归纳为四个方面，1．拟均相萃取模型，2．电荷胶米模型，3．双区作用模型，4．配位体－配位体相互作用的理论和协同微扰机理。本文以Al-CAS-CPB体系作为代表，通过Al-CAS-CPB三元配合物的结构、吸收光谱的变化和表面能力测定的结果探讨了CPB作用机理。利用电泳和离子交换实验说明了Al-CAS-CPB的配阴离子，利用平衡移动法和直线法测得Al：CAS的配位电为1：2，用等摩尔连续变换法测定Al：CPB的配位电为1：4，因而配合物的组成比Al：CAS：CPB＝1：2：4。最后推出此配合物的可能结构。从CAS、Al-CAS、Al-CAS-CPB的结构出发，研究了配位体之间相互作用对CAS中大共轭π键中π－电子流动难易的影响，成功地解释了Al-CAS-CPB最大吸收波长产生红移的原因。通过对CAS溶液浓度与三元配合物最大吸收波长、吸光度影响的研究，说明CPB有三个作用，一是与Al、CAS反应形成三元配合物，同时提高了Al与CAS的配位电；二能与CASi试剂产生缔合作用；三是能够形成胶米；增大了三元配合物在水中的溶解充，这三种作用相互制约，并与Al、CAS及CPB之间的摩尔比有关。通过对配合物吸光度，表面张力和表面活性剂浓度关系的研究及CMC值前后此三元体系吸光度、表面张力变化的比较，结果表明，单分子和形成胶米的表面活性剂同样具有增敏作用，这与郑用熙提出的双区作用机理相一致。在CMC值前，单分子表面活性剂与Al、CAS形成三元配合物而起增敏作用，在CMC值以后，CPB与Al、CAS形成胶米配合物而产生增敏作用。最后，讨论了三元体系的最大吸收波长与表面活性剂浓度的关系，结果表明，随CPB浓度的增大，三元体系的最大吸收波长发生蓝移。产生蓝移的原因可以从结构化学的角度得到解释，导致最大吸收波长不同的原因是在CMC前后，Al-CAS-CPB三元配合物所处的微环境不同。对稀酸性水体中铝形态的分离分析及低浓度铝的测定已有人进行研究，普遍认为无机单核铝是致毒因子，因此无机单核铝的浓度较其实际浓度对生命物质的意义更为重要。本文基本上采用Dirscoll形态分离法进行测定土壤酸性浸出液中铝的形态，用Al-CAS-CPB三元显色反应测定各部分铝形态和浓度。其各部分铝形态的分离如下：总活性铝（Al_r）：将样品用0.2um微孔滤膜过滤，用1N HCl将样品酸化为pH等于1，持续24小时，用Al-CAS-CPB测得其中铝含量。总单核态铝（Ala）：将样品用0.2um微孔膜过滤，直接用Al-CAS-CPB法测定铝量。稳定单核铝（Alo）：稳定的单核铝和不稳定的单核铝通过阳离子交换树脂分离。稳定单核铝通过阳离子树脂后，不能被树脂交换，用Al-CAS-CPB法可以直接流出液中铝量为Alo。不稳定单核铝(Alb)为Ala-Alo。在铝形态的分离过程中，我们使用了过滤和树脂交换二种分离方法。对此做了较详细的条件实验。研究了pH值对滤液中铝的影响，随pH值升高，滤液中铝量减小，这就说明，pH值升高，可能形成某些不能通过滤膜的形态，另外也可能是由膜吸附引起的。本文还比较了用静态平衡法和动态法阳离子交换分离稳定单核铝和不稳定单核铝，指出静态平衡法受到溶液pH值的制约，平衡所需时间过长，容易引起溶液中铝形态的变化和沾污，而动态法则能克服这些缺点，因此在实验中采用动态法。把形态分离的方法应用到土壤酸性浸提液中，结果表明，不稳定的单核铝形态(Alb)远远大于稳定的单核铝形态，而不稳定的单核铝形态中含有对植物的致毒因子，因而酸雨能导致森林死亡，农作物发育不良。