999 resultados para ion chip


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Silicon-on-insulator (SOI) technologies have been developed for radiation-hardened military and space applications. The use of SOI has been motivated by the full dielectric isolation of individual transistors, which prevents latch-up. The sensitive region for charge collection in SOI technologies is much smaller than for bulk-silicon devices potentially making SOI devices much harder to single event upset (SEU). In this study, 64 kB SOI SRAMs were exposed to different heavy ions, such as Cu, Br, I, Kr. Experimental results show that the heavy ion SEU threshold linear energy transfer (LET) in the 64 kB SOI SRAMs is about 71.8 MeV cm(2)/mg. Accorded to the experimental results, the single event upset rate (SEUR) in space orbits were calculated and they are at the order of 10(-13) upset/(day bit).

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Since the successful completion of the cooling storage ring (CSR) project in China at the end of 2007, high qualitative heavy ion beams with energy ranging from keV to GeV/u have been available at the Heavy Ion Research Facility at Lanzhou (HIRFL). More than 10(9) 1 GeVlu C6+ particles or 10(8) 235 MeV/u Xe particles can be stored in the CSR main-ring and extracted within hundred nano-seconds during the test running, the beam parameters will be improved in the coming years so that high energy density (HED) conditions could be achieved and investigated there. Recent scientific results from the experiments relevant to plasma research on HIRFL are summarized. Dense plasma research with intense heavy ion beams of CSR is proposed here.

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Within the framework of the improved isospin dependent quantum molecular dynamics (ImIQMD) model, pion emission in heavy-ion collisions in the region 1 A GeV is investigated systematically, in which the pion is considered to be mainly produced by the decay of resonances Delta(1232) and N*(1440). The in-medium dependence and Coulomb effects of pion production are included in the calculation. Total pion multiplicity and pi(-)/pi(+) yields are calculated for the reaction Au-197+(197) Au in central collisions for selected Skyrme parameters SkP, SLy6, Ska, SIII and compared with the measured data of the FOPI collaboration.

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Within the hadronic transport model IBUU04, we study the density-dependent symmetry energy by using the neutron-proton differential flow from the Sn-132+Sn-124 reactions at beam energies of 200, 400, 600 and 800MeV per nucleon. The strong effect of the symmetry energy is shown at the incident beam energy of 400 MeV/A. The small medium-effect of the neutron-proton differential flow is also found. We also study the neutron-proton differential flows with impact parameters of 3, 5, 7 fm. It is found that in semi-central collisions the sensitivity of the neutron-proton differential flow to the symmetry energy is larger.

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Amorphous SiO2 (a-SiO2) thin films were thermally grown on single-crystalline silicon. These a-SiO2/Si samples were first implanted (C-doped) with 100-keV carbon ion at room temperature (RT) at a dose of 5.0 x 10(17) C-ions/cm(2) and were then irradiated at RT by using 853 MeV Pb ions at closes of 5.0 x 10(11), 1.0 x 10(12), 2.0 x 10(12) and 5.0 x 10(12) Pb-ions/cm(2), respectively. The microstructures and the photoluminescence (PL) properties of these samples induced by Pb ions were investigated using fluorescence spectroscopy and transmission electron microscopy. We found that high-energy Pb-ion irradiation could induce the formation of a new phase and a change in the PL property of C-doped a-SiO2/Si samples. The relationship between the observed phenomena and the ion irradiation parameters is briefly discussed.

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A systematic study of the pi(-)/pi(+) ratio in heavy-ion collisions with the same neutron/proton ratio but different masses can help single out effects of the nuclear mean field on pion production. Based on simulations using the IBUU04 transport model, it is found that the pi(-)/pi(+) ratio in head-on collisions of Ca-48 + Ca-48, Sn-124 + Sn-124, and Au-197 + Au-197 at beam energies from 0.25 to 0.6 GeV/nucleon increases with increasing the system size or decreasing the beam energies. A comprehensive analysis of the dynamical isospin fractionation and the pi(-)/pi(+) ratio as well as their time evolution and spatial distributions demonstrates clearly that the pi(-)/pi(+) ratio is an effective probe of the high-density behavior of the nuclear symmetry energy.

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This paper presents an introduction to the application of ion traps and storage devices for cluster physics. Some experiments involving cluster ions in trapping devices such as Penning traps, Paul traps, quadrupole or multipole linear traps are briefly discussed. Electrostatic ion storage rings and traps which allow for the storage of fast ion beams without mass limitation are presented as well. We also report on the recently developed mini-ring, a compact electrostatic ion storage ring for cluster, molecular and biomolecular ion studies.