Estimate of N2O release from pit-toilets

The use of pit-toilets has severely contaminated the groundwater with nitrate ions in Mulbagal town, Karnataka, India. This paper examines the potential of nitrate ions in the pit-toilet effluents to transform to N2O and to escape to atmosphere from 16 wards of Mulbagal town. Anaerobic conditions prevailing in the pit-toilet convert 25 % of the available N to ammonium ions. Only 3-33 % of ammonium ions transform to nitrate ions in the pit-toilet and escape with the effluent. During migration to aquifer, only 4.5 % of available nitrate concentration in the effluent transforms to N-2 and N2O gases in the 1.5-m-thick saturated zone underlying the pit-toilet; 36-55 % of the gases comprise N2O and the remainder of N-2. Further only 18 % of N2O formed escapes to atmosphere, while the remainder is retained in soil solution. Calculations show that 9.88 x 10(13) molecules of N2O/cm(2) would be cumulatively released from 16 wards of Mulbagal town, over an area of 4.9 km(2).

Single-step synthesis of carbon nanotubes/iron/iron oxide composite films through inert-ambient CVD using ferric acetylacetonate as a precursor

We have developed a unique single-step chemical vapor deposition (CVD) route for the synthesis of composite thin films containing carbon nanotubes (CNTs). CVD was carried out in an inert ambient using only iron(III) acetylacetonate as the precursor. Depositions were conducted at 700 degrees C on stainless steel substrates in argon ambient in the absence of any reactive gases (such as oxygen, hydrogen). By changing the deposition parameters, especially the pressure in the CVD reactor, the form of carbon deposited could be changed from amorphous to carbon nanotubes, the latter resulting in Fe-Fe3O4-CNT films. X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy, and electron microscopy together confirm the formation of the three-component composite and illustrate the nanoscale mixing of the components. Elemental iron formed in this process was protected from oxidation by the co-deposited carbon surrounding it. Irrespective of the substrate used, a composite coating with CNTs was formed under optimum conditions, as verified by analyses of the film formed on polycrystalline alumina and silicon substrates.

Nickel substitution induced effects on gas sensing properties of cobalt ferrite nanoparticles

Ni2+ ion induced unusual conductivity reversal and an enhancement in the gas sensing properties of ferrites based gas sensors, is reported. The Co1-xNixFe2O4 (for x = 0, 0.5 and 1) nanoparticles were synthesized by wet chemical co-precipitation method and gas sensing properties were studied as a function of composition and temperature. The structural, morphological and microstructural characterization revealed crystallite size of in the range 10-20 nm with porous morphology consisting of nano-sized grains. The Energy Dispersive X-ray (EDX) mapping confirms homogeneous distribution of Co, Ni, Fe and O elements in the ferrites. The non-stoichiometry of the inverse spinel type ferrites and the relative concentration of Ni3+/Co3+ defects were studied using X-ray photoelectron spectroscopy. It is found that the addition of Ni2+ ions into cobalt ferrite shows preferred selectivity towards CO gas at high temperature (325 degrees C) and ethanol gas at low temperature (250 degrees C), unlike undoped cobalt ferrite or undoped nickel ferrite, which show similar response for both these gases. Moreover, an unusual conductivity reversal is observed, except cobalt ferrite due to the difference in reactivity of the gases as well as characteristic non-stoichiometry of ferrites. This behavior is highly gas ambient dependent and hence can be well-exploited for selective detection of gases. (C) 2015 Elsevier B.V. All rights reserved.

RF plasma enhanced MOCVD of yttria stabilized zirconia thin films using octanedionate precursors and their characterization

Yttria stabilized zirconia thin films have been deposited by RF plasma enhanced MOCVD technique on silicon substrates at substrate temperature of 400 degrees C. Plasma of precursor vapors of (2,7,7-trimethyl-3,5-octanedionate) yttrium (known as Y(tod)(3)), (2,7,7-trimethyl-3,5-octanedionate) zirconium (known as Zr(tod)(4)), oxygen and argon gases is used for deposition. To the best of our knowledge, plasma assisted MOCVD of YSZ films using octanediaonate precursors have not been reported in the literature so far. The deposited films have been characterized by GIXRD, FTIR, XPS, FESEM, AFM, XANES, EXAFS, EDAX and spectroscopic ellipsometry. Thickness of the films has been measured by stylus profilometer while tribological property measurement has been done to study mechanical behavior of the coatings. Characterization by different techniques indicates that properties of the films are dependent on the yttria content as well as on the structure of the films. (C) 2015 Elsevier B.V. All rights reserved.

Estimation of Power Input to Complex Dielectric Barrier Discharge Reactor Geometries used in NOx Cleaning

Studies were carried out to estimate the power input to Dielectric Barrier Discharge (DBD) reactors powered by AC high voltage in the context of their application in non-thermal plasma cleaning of exhaust gases. Power input to the reactors was determined both theoretically and experimentally. Four different reactor geometries energized with 50 Hz and 1.5 kHz AC excitation were considered for the study. The theoretically estimated power using Manley's equation was found to agree with the experimental results. Results show that the analytically computed capacitance, without including the electrode edge effects, gives sufficiently good results that are matching with the measured values. For complex geometries where analytical calculation of capacitance is often difficult, a novel method of estimating the reactor capacitance, and hence the power input to the reactor, was introduced in this paper. The predicted results were validated with experiments.

Measuring the magnetic-field-dependent chemical potential of a low-density three-dimensional electron gas in n-GaAs and extracting its magnetic susceptibility

We report the magnetic-field-dependent shift of the electron chemical potential in bulk, n-type GaAs at room temperature. A transient voltage of similar to 100 mu V was measured across a Au-Al2O3-GaAs metal-oxide-semiconductor capacitor in a pulsed magnetic field of similar to 6 T. Several spurious voltages larger than the signal that had plagued earlier researchers performing similar experiments were carefully eliminated. The itinerant magnetic susceptibility of GaAs is extracted from the experimentally measured data for four different doping densities, including one as low as 5 x 10(15) cm(-3). Though the susceptibility in GaAs is dominated by Landau-Peierls diamagnetism, the experimental technique demonstrated can be a powerful tool for extracting the total free carrier magnetization of any electron system. The method is also virtually independent of the carrier concentration and is expected to work better in the nondegenerate limit. Such experiments had been successfully performed in two-dimensional electron gases at cryogenic temperatures. However, an unambiguous report on having observed this effect in any three-dimensional electron gas has been lacking. We highlight the 50 year old literature of various trials and discuss the key details of our experiment that were essential for its success. The technique can be used to unambiguously yield only the itinerant part of the magnetic susceptibility of complex materials such as magnetic semiconductors and hexaborides, and thus shed light on the origin of ferromagnetism in such systems.

Visualization of dust explosion under microgravity conditions

The objective of this work was to apply visualization methods to the experimental study of cornstarch dust-air mixture combustion in a closed vessel volume under microgravity conditions. A dispersion system with a small scale of turbulence was used in the experiments. A gas igniter initiated combustion of the dust-air mixture in the central or top part of the vessel. Flame propagation through the quiescent mixture was recorded by a high-speed video camera. Experiments showed a very irregular flame front and irregular distribution of the regions with local reactions of re-burning behind the flame front. at a later stage of combustion. Heat transfer from the hot combustion products to the walls is shown to have an important role in the combustion development. The maximum pressure and maximum rate of pressure rise were higher for flame propagation from the vessel center than for flame developed from the top pan of the vessel. The reason for smaller increase of the rate of pressure rise, for the flame developed from the top of the vessel. in comparison with that developed from the vessel center, was much faster increase of the contact surface of the combustion gases with the vessel walls. It was found that in dust flames only small part of hear was released at the flame front, the remaining part being released far behind it.

"Evaluación del carbono almacenado en la biomasa y suelo del bosque tropical seco en el municipio de Nandaime, departamento de Granada, Nicaragua"

El dióxido de carbono es el más importante de los Gases de Efecto Invernadero, por la actividad humana, tanto en términos de su cantidad como de su potencial efecto sobre el calentamiento global. Este es producido cuando se usa combustible fósil para generar energía y cuando los bosques son deforestados y quemados. La vegetación arbórea es una fuente y a la vez un sumidero natural de CO2. El presente estudio se realizó en el municipio de Nandaime departamento de Granada 20 10, con el objetivo de evaluar el carbono almacenado en los componentes biomasa aérea, hojarasca y suelo en tres sucesiones de edad (9, 15 y 19 años), en bosque seco tropical. Se hizo un inventario forestal (fustal 200 m2 y latizal 25 m2). Se cortó el árbol promedio en fustales Se pesó y muestreo la biomasa aérea y hojarasca, en las cuales se determinó en laboratorio el porcentaje de humedad y contenido de carbono. La mayor cantidad de árboles fue en la edad de 9 años con 2,366.7 árboles/ha. Los promedios de diámetro en fustal fueron 10.92, 14.7 y 15.97 cm, para 9, 15 y 19 años respectivamente. Los promedios de diámetro en latizal fueron 6.29, 6.41 y 6.43 cm, para 9 15 y 19 años respectivamente. Los promedios de altura en fustal fueron 6.92, 10.21 y 10.78 m, para 9 15 y19 años respectivamente. Los promedios de altura en latizal fueron 5.25, 6.00 y 8.13 m, para 9 15 y19 años respectivamente. La mayor cantidad de área basal y volumen fue en la edad de 9 años con 38.66 m 2/a y 356.83 m3/ha. Según el índice de diversidad Shannon-Wiener y Simpson se determinó que el sitio más diverso en fustal fue la sucesión de 15 años de edad y el menos diverso el nivel de 19 años, en latizal el más diverso fue el de 15 años y el menos diverso el de 19. En la edad 19 años , se cuantifico la mayor cantidad de hojarasca con 5.69 t/ha, pero el mayor contenido de carbono fue en 9 años con 1.11 t/ha. En la edad 9 años, se cuantifico la mayor cantidad de biomasa y carbono en ramas y hojas con 206.82 y 37.49t/ha, respectivamente. Para fuste, se cuantifico la mayor cantidad de biomasa y carbono en la edad de 9 años con 149.98 y 47.63 t/ha, respectivamente. El carbono almacenado en el suelo fueron 22.5, 27.68 y 42.39 t/ha, para 9, 15 y19 años respectivamente. La tasa de fijación de la biomasa aérea fue 9.46, 7.11 y 6.23 t/año, para 9, 15 y 19 años respectivamente.

Semi-insulating layer for novel high voltage polysilicon thin film transistors

This work describes the deposition and characterisation of semi-insulating oxygen-doped silicon films for the development of high voltage polycrystalline silicon (poly-Si) circuitry on glass. The performance of a novel poly-Si High Voltage Thin Film Transistor (HVTFT) structure, incorporating a layer of semi-insulating material, has been investigated using a two dimensional device simulator. The semi-insulating layer increases the operating voltage of the HVTFT structure by linearising the potential distribution in the device offset region. A glass compatible semi-insulating layer, suitable for HVTFT applications, has been deposited by the Plasma Enhanced Chemical Vapour Deposition (PECVD) technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures. The as-deposited films are furnace annealed at 600°C which is the maximum process temperature. By varying the N2O/SiH4 ratio the conductivity of the annealed films can be accurately controlled up to a maximum of around 10-7 Ω-1cm-1. Helium dilution of the reactant gases improves both film uniformity and reproducibility. Raman analysis shows the as-deposited and annealed films to be completely amorphous. A model for the microstructure of these Semi-Insulating Amorphous Oxygen-Doped Silicon (SIAOS) films is proposed to explain the observed physical and electrical properties.

Low-temperature (≤600 °C) semi-insulating oxygen-doped silicon films by the PECVD technique for large-area power applications

This work describes the deposition, annealing and characterisation of semi-insulating oxygen-doped silicon films at temperatures compatible with polysilicon circuitry on glass. The semi-insulating layers are deposited by the plasma enhanced chemical vapour deposition technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures at a temperature of 350 °C. The as-deposited films are then furnace annealed at 600 °C which is the maximum process temperature. Raman analysis shows the as-deposited and annealed films to be completely amorphous. The most important deposition variable is the N2O SiH4 gas ratio. By varying the N2O SiH4 ratio the conductivity of the annealed films can be accurately controlled, for the first time, down to a minimum of ≈10-7Ω-1cm-1 where they exhibit a T -1 4 temperature dependence indicative of a hopping conduction mechanism. Helium dilution of the reactant gases is shown to improve both film uniformity and reproducibility. A model for the microstructure of these semi-insulating amorphous oxygen-doped silicon films is proposed to explain the observed physical and electrical properties. © 1995.

Material properties and tribological performance of rf-PECVD deposited DLC coatings

Diamond-like carbon (DLC) coatings were deposited on to silicon, glass and metal substrates, using an rf-plasma enhanced chemical vapour deposition (rf-PECVD) process. The resultant film properties were evaluated in respect of material and interfacial property control, based on bias voltage variation and the introduction of inert (He and Ar) and reactive (N2) diluting gases in a CH4 plasma. The analysis techniques used to assess the material properties of the films included AFM, EELS, RBS/ERDA, spectroscopic, electrical, stress, microhardness, and adhesion. These were correlated to the tribological performance of the coatings using wear measurements. The most important observation is that He dilution (>90%) promotes enhanced adhesion with respect to all substrate material studies. Coatings typically exhibit a microhardness of the order of 10-20 GPa in films 0.1gases in a CH4 plasma. The analysis techniques used to assess the material properties of the films included AFM, EELS, RBS/ERDA, spectroscopic, electrical, stress, microhardness, and adhesion. These were correlated to the tribological performance of the coatings using wear measurements. The most important observation is that He dilution (>90%) promotes enhanced adhesion with respect to all substrate materials studied. Coatings typically exhibit a microhardness of the order of 10-20 GPa in films 0.1 < d < 2 μm thick, with associated electrical resistivity in the range 108 < ρ < 1012 Ω·cm, coefficient of friction <0.1 and surface RMS roughness as low as 2 A. The results are discussed with respect to surface pre-treatment, ion surface bombardment, interfacial reactivity and changes in plasma gas breakdown processes.

Deposition of carbon nitride films using an electron cyclotron wave resonance plasma source

Hydrogenated amorphous carbon nitride (a-C:N:H) has been synthesized using a high plasma density electron cyclotron wave resonance (ECWR) technique using N2 and C2H2 as source gases, at different ratios and a fixed ion energy (80 eV). The composition, structure and bonding state of the films were investigated and related to their optical and electrical properties. The nitrogen content in the film rises rapidly until the N2/C2H2 gas ratio reaches 2 and then increases more gradually, while the deposition rate decreases steeply, placing an upper limit for the nitrogen incorporation at 30 at%. For nitrogen contents above 20 at%, the band gap and sp3-bonded carbon fraction decrease from 1.7 to 1.1 eV and approximately 65 to 40%, respectively. Films with higher nitrogen content are less dense than the original hydrogenated tetrahedral amorphous carbon (ta-C:H) film but, because they have a relatively high band gap (1.1 eV), high resistivity (109 Ω cm) and moderate sp3-bonded carbon fraction (40%), they should be classed as polymeric in nature.

Hydrogen content estimation of hydrogenated amorphous carbon by visible Raman spectroscopy

In the present study, we report the hydrogen content estimation of the hydrogenated amorphous carbon (a-C:H) films using visible Raman spectroscopy in a fast and nondestructive way. Hydrogenated diamondlike carbon films were deposited by the plasma enhanced chemical vapor deposition, plasma beam source, and integrated distributed electron cyclotron resonance techniques. Methane and acetylene were used as source gases resulting in different hydrogen content and sp2/sp3 fraction. Ultraviolet-visible (UV-Vis) spectroscopic ellipsometry (1.5-5 eV) as well as UV-Vis spectroscopy were provided with the optical band gap (Tauc gap). The sp2/sp3 fraction and the hydrogen content were independently estimated by electron energy loss spectroscopy and elastic recoil detection analysis-Rutherford back scattering, respectively. The Raman spectra that were acquired in the visible region using the 488 nm line shows the superposition of Raman features on a photoluminescence (PL) background. The direct relationship of the sp2 content and the optical band gap has been confirmed. The difference in the PL background for samples of the same optical band gap (sp2 content) and different hydrogen content was demonstrated and an empirical relationship between the visible Raman spectra PL background slope and the corresponding hydrogen content was extracted. © 2004 American Institute of Physics.

Kinetics of the chemical looping oxidation of H2 by a co-precipitated mixture of CuO and Al2O3

Chemical-looping combustion (CLC) has the inherent property of separating CO2 from flue gases. Instead of air, it uses an oxygen-carrier, usually in the form of a metal oxide, to provide oxygen for combustion. When used for the combustion of gaseous fuels, such as natural gas, or synthesis gas from the gasification of coal, the technique gives a stream of CO2 which, on an industrial scale, would be sufficiently pure for geological sequestration. An important issue is the form of the metal oxide, since it must retain its reactivity through many cycles of complete reduction and oxidation. Here, we report on the rates of oxidation of one constituent of synthesis gas, H2, by co-precipitated mixtures of CuO+Al2O3 using a laboratory-scale fluidised bed. To minimise the influence of external mass transfer, and also of errors in the measurement of [H2], particles sized to 355-500μm were used at low [H2], with the temperature ranging from 450 to 900°C. Under such conditions, the reaction was slow enough for meaningful measurements of the intrinsic kinetics to be made. The reaction was found to be first order with respect to H2. Above ∼800°C, the reaction of CuO was fast and conformed to the shrinking core mechanism, proceeding via the intermediate, Cu2O, in: 2CuO+H2→Cu2O+H2O, ΔH1073 K0=- 116.8 kJ/mol; Cu2O+H2→2Cu+H2O, ΔH1073 K0-80.9 kJ/mol. After oxidation of the products Cu and Cu2O back to CuO, the kinetics in subsequent cycles of chemical looping oxidation of H2 could be approximated by those in the first. Interestingly, the carrier was found to react at temperatures as low as 300°C. The influence of the number of cycles of reduction and oxidation is explored. Comparisons are drawn with previous work using reduction by CO. Finally, these results indicate that the kinetics of reaction of the oxygen carrier with gasifier synthesis gases is very much faster than rates of gasification of the original fuel. © 2010 The Institution of Chemical Engineers.

Estudio de la reducción de SO2 con CH4 en presencia de O2 a altas temperaturas, sobre catalizador de Cr2O3 soportado en alúmina

Resumen: Se propone utilizar un óxido como el Cr2O3 como catalizador ya que se ha determinado anteriormente, en la primera etapa de esta investigación, (“Estudio comparativo de la retención de SO2 sobre óxidos de metales de transición soportados en alúmina”), que la retención de SO2 sobre su superficie es un proceso de quimisorción con formación de especies sulfito superficiales sobre sitios básicos y un proceso de óxido reducción del ión metálico. Apoya este mecanismo el hecho de que la cantidad de SO2 adsorbido es función de la temperatura. La mayor eficiencia del Cr2O3 puede explicarse en base a sus propiedades superficiales, lo cual ha sido utilizado en la segunda etapa de reacción de reducción, ya que se ha completado la etapa inicial de quimisorción. En la segunda etapa de esta investigación (“Estudio de la reacción de reducción de SO2 con CH4 a altas temperaturas sobre catalizador de Cr2O3 soportado en alúmina”), se apuntó al estudio de un nuevo tipo de sinergia entre propiedades ácido-base y propiedades redox en una misma superficie. Esta tercera etapa apuntó a determinar la influencia que tiene el O2 en este proceso, ya que el O2 se encuentra presente en las chimeneas industriales en las condiciones de reacción entre el SO2 y el CH4, y produce modificaciones en los parámetros de reacción. Se experimentó con diferentes masas de catalizador y flujos de los distintos gases, y se estudió la influencia de la presencia de oxígeno en la reacción y particularmente con diferentes flujos del mismo, y la posibilidad de regeneración del catalizador.