988 resultados para differential recursive scheme


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An electrically bistable device has been fabricated using nanocomposite films consisting of silver nanoparticles and a semiconducting polymer by a simple spin-coating method. The current-voltage characteristics of the as-fabricated devices exhibit an obvious electrical bistability and negative differential resistance effect. The current ratio between the high-conducting state and low-conducting state can reach more than 103 at room temperature. The electrical bistability of the device is attributed to the electric-filed-induced charge transfer between the silver nanoparticles and the polymer, and the negative differential resistance behavior is related to the charge trapping in the silver nanoparticles. The results open up a simple approach to fabricate high quality electrically bistable devices by doping metal nanoparticles into polymer.

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Using a transport model coupled with a phase-space coalescence afterburner, we study the triton-He-3 (t-He-3) ratio with both relative and differential transverse flows in semicentral Sn-132 + Sn-124 reactions at a beam energy of 400 MeV/nucleon. The neutron-proton ratios with relative and differential flows are also discussed as a reference. We find that similar to the neutron-proton pairs, the t-He-3 pairs also carry interesting information regarding the density dependence of the nuclear symmetry energy. Moreover, the nuclear symmetry energy affects more strongly the t-He-3 relative and differential flows than the pi(-)/pi(+) ratio in the same reaction. The t-He-3 relative flow can be used as a particularly powerful probe of the high-density behavior of the nuclear symmetry energy.

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An extensive study of the one-dimensional two-segment Frenkel-Kontorova FK model reveals a transition from the counterintuitive existence to the ordinary nonexistence of a negative-differential-thermal-resistance NDTR regime, when the system size or the intersegment coupling constant increases to a critical value. A “phase” diagram which depicts the relevant conditions for the exhibition of NDTR was obtained. In the existence of a NDTR regime, the link at the segment interface is weak and therefore the corresponding exhibition of NDTR can be explained in terms of effective phonon-band shifts. In the case where such a regime does not exist, the theory of phonon-band mismatch is not applicable due to sufficiently strong coupling between the FK segments. The findings suggest that the behavior of a thermal transistor will depend critically on the properties of the interface and the system size.