Analysis of the modulation depth affected by the polarization orientation in polarization interference imaging spectrometers

The influence of the orientations of both polarizer and analyzer on modulation depth of spatially distributed interferograms for static polarization interference imaging spectrometer (SPIIS) is analyzed. A generally, theoretical relationship to determine the modulation depth of a SPIIS is derived. The special cases of maximum modulation depth (V = 1) and the minimum modulation depth (V = 0) are examined. Our results will provide a theoretical and practical guide for studying, developing and engineering polarization interference imaging spectrometers. (C) 2003 Elsevier B.V. All rights reserved.

Ultrahigh-resolution fiber-optic image guides derived from microstructured polymer optical fiber preforms

Ultrahigh-resolution fiber-optic image guides-fused image fiber, faceplate, and taper-were fabricated by using microstructured polymer optical fiber (MPOF) preforms composed of two polymers: polymethylmethacrylate and polystyrene. The pixel diameter in the resultant MPOF-based image guides was as small as 3 mu m. The imaging capabilities of these types of fiber-optic elements were demonstrated. (C) 2009 Optical Society of America

EFFECT OF IMAGE FORCES ON ELECTRONS CONFINED IN LOW-DIMENSIONAL STRUCTURES UNDER A MAGNETIC-FIELD

We consider the effect of image forces, arising due to a difference in dielectric permeabilities of the well layer and barrier layers, on the energy spectrum of an electron confined in a rectangular potential well under a magnetic field. Depending on the value and the sign of the dielectric mismatch, image forces can localize electrons near the interfaces of the well or in well centre and change the direct intersubband gaps into indirect ones. These effects can be controlled by variation of the magnetic field, offering possibilities for exact tuning of electronic devices.

Passive mode locking of an Yb:YAB laser with a low modulation depth SESAM

A passive mode-locked diode-pumped self-frequency-doubling Yb:YAB laser with a low modulation depth semiconductor saturable absorber mirror operating at 374 MHz is demonstrated. The measured pulse duration is 1.98 ps at the wavelength of 1044 nm. The maximum average power reaches 45 mW.

Carrier Depth Profile of Si/SiGe/Si n-p-n HBTStructural Materials Characterized by Electrochemical Capacitance- Voltage Method

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