Graphene oxide-Fe3O4 nanoparticle composite with high transverse proton relaxivity value for magnetic resonance imaging

The potential of graphene oxide-Fe3O4 nanoparticle (GO-Fe3O4) composite as an image contrast enhancing material in magnetic resonance imaging has been investigated. Proton relaxivity values were obtained in three different homogeneous dispersions of GO-Fe3O4 composites synthesized by precipitating Fe3O4 nanoparticles in three different reaction mixtures containing 0.01 g, 0.1 g, and 0.2 g of graphene oxide. A noticeable difference in proton relaxivity values was observed between the three cases. A comprehensive structural and magnetic characterization revealed discrete differences in the extent of reduction of the graphene oxide and spacing between the graphene oxide sheets in the three composites. The GO-Fe3O4 composite framework that contained graphene oxide with least extent of reduction of the carboxyl groups and largest spacing between the graphene oxide sheets provided the optimum structure for yielding a very high transverse proton relaxivity value. It was found that the GO-Fe3O4 composites possessed good biocompatibility with normal cell lines, whereas they exhibited considerable toxicity towards breast cancer cells. (C) 2015 AIP Publishing LLC.

Enhancing the mechanical and biological performance of a metallic biomaterial for orthopedic applications through changes in the surface oxide layer by nanocrystalline surface modification

Nanostructured metals are a promising class of biomaterials for application in orthopedics to improve the mechanical performance and biological response for increasing the life of biomedical implants. Surface mechanical attrition treatment (SMAT) is an efficient way of engineering nanocrystalline surfaces on metal substrates. In this work, 316L stainless steel (SS), a widely used orthopedic biomaterial, was subjected to SMAT to generate a nanocrystalline surface. Surface nanocrystallization modified the nature of the oxide layer present on the surface. It increased the corrosion-fatigue strength in saline by 50%. This increase in strength is attributed to a thicker oxide layer, residual compressive stresses, high strength of the surface layer, and lower propensity for intergranular corrosion in the nanocrystalline layer. Nanocrystallization also enhanced osteoblast attachment and proliferation. Intriguingly, wettability and surface roughness, the key parameters widely acknowledged for controlling the cellular response remained unchanged after nanocrystallization. The observed cellular behavior is explained in terms of the changes in electronic properties of the semiconducting passive oxide film present on the surface of 316L SS. Nanocrystallization increased the charge carrier density of the n-type oxide film likely preventing denaturation of the adsorbed cell-adhesive proteins such as fibronectin. In addition, a net positive charge developed on the otherwise neutral oxide layer, which is known to facilitate cellular adhesion. The role of changes in the electronic properties of the oxide films on metal substrates is thus highlighted in this work. This study demonstrates the advantages of nanocrystalline surface modification by SMAT for processing metallic biomaterials used in orthopedic implants.

Modification of metal-InGaAs Schottky barrier behaviour by atomic layer deposition of ultra-thin Al2O3 interlayers

The effect of inserting ultra-thin atomic layer deposited Al2O3 dielectric layers (1 nm and 2 nm thick) on the Schottky barrier behaviour for high (Pt) and low(Al) work function metals on n- and p-doped InGaAs substrates has been investigated. Rectifying behaviour was observed for the p-type substrates (both native oxide and sulphur passivated) for both the Al/p-InGaAs and Al/Al2O3/p-InGaAs contacts. The Pt contacts directly deposited on p-InGaAs displayed evidence of limited rectification which increased with Al2O3 interlayer thickness. Ohmic contacts were formed for both metals on n-InGaAs in the absence of an Al2O3 interlayer, regardless of surface passivation. However, limited rectifying behaviour was observed for both metals on the 2 nm Al2O3/n-InGaAs samples for the sulphur passivated InGaAs surface, indicating the importance of both surface passivation and the presence of an ultra-thin dielectric interlayer on the current-voltage characteristics displayed by these devices. (C) 2015 Elsevier B.V. All rights reserved.

Stability analysis of thick piezoelectric metal based FGM plate using first order and higher order shear deformation theory

This paper presents the stability analysis of functionally graded plate integrated with piezoelectric actuator and sensor at the top and bottom face, subjected to electrical and mechanical loading. The finite element formulation is based on first order and higher order shear deformation theory, degenerated shell element, von-Karman hypothesis and piezoelectric effect. The equation for static analysis is derived by using the minimum energy principle and solutions for critical buckling load is obtained by solving eigenvalue problem. The material properties of the functionally graded plate are assumed to be graded along the thickness direction according to simple power law function. Two types of boundary conditions are used, such as SSSS (simply supported) and CSCS (simply supported along two opposite side perpendicular to the direction of compression and clamped along the other two sides). Sensor voltage is calculated using present analysis for various power law indices and FG (functionally graded) material gradations. The stability analysis of piezoelectric FG plate is carried out to present the effects of power law index, material variations, applied mechanical pressure and piezo effect on buckling and stability characteristics of FG plate.

Copper oxide nanoparticles: an antidermatophytic agent for Trichophyton spp.

Copper oxide (CuO) is one of the most important transition metal oxides due to its unique properties. It is used in various technological applications such as high critical temperature, superconductors, gas sensors, in photoconductive applications and so on. Recently, it has been used as an antimicrobial agent against various pathogenic bacteria. In the present investigation, we studied the structural and antidermatophytic properties of CuO nanoparticles (NPs) synthesized by a precipitation technique. Copper sulfate was used as a precursor and sodium hydroxide as a reducing agent. Scanning electron microscopy (SEM) showed flower-shaped CuO NPs and X-ray diffraction (XRD) pattern showed the crystalline nature of CuO NPs. These NPs were evaluated against two prevalent species of dermatophytes, i.e. Trichophyton rubrum and T. mentagrophytes by using the broth microdilution technique. Further, the NPs activity was also compared with synthetic sertaconazole. Although better antidermatophytic activity was exhibited with sertaconazole as compared to NPs, being synthetic, sertaconazole may not be preferred, as it shows different adverse effects. Trichophyton mentagrophytes is more susceptible to NPs than T. rubrum. A phylogenetic approach was applied for predicting differences in susceptibility of pathogens.

Noble metal ions in CeO2 and TiO2: synthesis, structure and catalytic properties

In the past four decades, CeO2 has been recognized as an attractive material in the area of auto exhaust catalysis because of its unique redox properties. In the presence of CeO2, the catalytic activity of noble metals supported on Al2O3 is enhanced due to higher dispersion of noble metals in their ionic form. In the last few years, we have been exploring an entirely new approach of dispersing noble metal ions on CeO2 and TiO2 matrices for redox catalysis. In this study, the dispersion of noble metal ions by solution combustion as well as other methods over CeO2 and TiO2 resulting mainly in Ce1-xMxO2-delta, Ce1-x-yTixMyO2-delta, Ce1-x-ySnxMyO2-delta, Ce1-x-yFexMyO2-delta, Ce1-x-yZrxMyO2-delta and Ti1-xMxO2-delta (M = Pd, Pt, Rh and Ru) catalysts, the structure of these materials, their catalytic properties toward different types of catalysis, structure-property relationships and mechanisms of catalytic reactions are reviewed. In these catalysts, noble metal ions are incorporated into a substrate matrix to a certain limit in a solid solution form. Lower valent noble metal-ion substitution in CeO2 and TiO2 creates noble metal ionic sites and oxide ion vacancies that act as adsorption sites for redox catalysis. It has been demonstrated that these new generation noble metal ionic catalysts (NMIC) have been found to be catalytically more active than conventional nanocrystalline noble metal catalysts dispersed on oxide supports.

Amperometric acetylcholinesterase biosensor for pesticides monitoring utilising iron oxide nanoparticles and poly(indole-5-carboxylic acid)

A new electrochemical sensing device was constructed for determination of pesticides. In this report, acetylcholinesterase was bioconjugated onto hybrid nanocomposite, i.e. iron oxide nanoparticles and poly(indole-5-carboxylic acid) (Fe(3)O(4)NPs/Pin5COOH) was deposited electrochemically on glassy carbon electrode. Fe(3)O(4)NPs was showed as an amplified sensing interface at lower voltage which makes the sensor more sensitive and specific. The enzyme inhibition by pesticides was detected within concentrations ranges between 0.1-60 and 1.5-70 nM for malathion and chlorpyrifos, respectively, under optimal experimental conditions (sodium phosphate buffer, pH 7.0 and 25 degrees C). Biosensor determined the pesticides level in water samples (spiked) with satisfactory accuracy (96%-100%). Sensor showed good storage stability and retained 50% of its initial activity within 70 days at 4 degrees C.

Minuscule weight percent of graphene oxide and reduced graphene oxide modified Ag3PO4: new insight into improved photocatalytic activity

Designing and fabricating hybrid systems with a visible light active semiconductor as one of its components is an important research area for the development of highly efficient photocatalysts. Herein, we report visible-light driven photocatalytic activity of graphene oxide (GO) and controllably reduced GO (rGO) modified Ag3PO4 composites fabricated by an in situ method. Concentration of graphene derivatives in GO/rGO-Ag3PO4 composites was in the range of 0.13-0.52 wt% which is very minute compared to those reported previously. The optimal concentration of GO in Ag3PO4 with a kinetics (k = 1.23 +/- 0.04 min(-1)) for the degradation of rhodamine B is 0.26 wt%. GO-Ag3PO4 photocatalysts display an improved catalytic activity compared with pristine and rGOs modified Ag3PO4. In line with this, GO/rGO-Ag3PO4 composites show improved photocatalytic activity for the degradation of 2-chlorophenol compared with Degussa P-25. Our experiments with GO reduced to different extents show that, rGO with more polar functional groups exhibits a higher photocatalytic efficiency. The photocatalytic activity in the presence of different scavengers reveals that holes and O-2(-center dot) reactive species play major roles in the degradation phenomenon. In view of our experimental results and reported theoretical studies, a change in conduction band energy level and variation in the contribution of different charge orbitals (C 2p and O 2p) to the conduction band in the composite favours electron flow from graphene derivatives to the semiconductor, enhancing its photocatalytic response.

Zinc oxide nanowire networks for macroelectronic devices

Highly transparent zinc oxide (ZnO) nanowire networks have been used as the active material in thin film transistors (TFTs) and complementary inverter devices. A systematic study on a range of networks of variable density and TFT channel length was performed. ZnO nanowire networks provide a less lithographically intense alternative to individual nanowire devices, are always semiconducting, and yield significantly higher mobilites than those achieved from currently used amorphous Si and organic TFTs. These results suggest that ZnO nanowire networks could be ideal for inexpensive large area electronics. © 2009 American Institute of Physics.

Zinc oxide nanostructures and high electron mobility nanocomposite thin film transistors

This paper reports on the synthesis of zinc oxide (ZnO) nanostructures and examines the performance of nanocomposite thin-film transistors (TFTs) fabricated using ZnO dispersed in both n- and p-type polymer host matrices. The ZnO nanostructures considered here comprise nanowires and tetrapods and were synthesized using vapor phase deposition techniques involving the carbothermal reduction of solid-phase zinc-containing compounds. Measurement results of nanocomposite TFTs based on dispersion of ZnO nanorods in an n-type organic semiconductor ([6, 6]-phenyl-C61-butyric acid methyl ester) show electron field-effect mobilities in the range 0.3-0.6 cm2V-1 s-1. representing an approximate enhancement by as much as a factor of 40 from the pristine state. The on/off current ratio of the nanocomposite TFTs approach 106 at saturation with off-currents on the order of 10 pA. The results presented here, although preliminary, show a highly promising enhancement for realization of high-performance solution-processable n-type organic TFTs. © 2008 IEEE.

Schottky barrier heights of tantalum oxide, barium strontium titanate, lead titanate, and strontium bismuth tantalate

The Schottky barrier heights of various metals on the high permitivity oxides tantalum pentoxide, barium strontium titanate, lead zirconate titanate, and strontium bismuth tantalate have been calculated as a function of the metal work function. It is found that these oxides have a dimensionless Schottky barrier pinning factor S of 0.28-0.4 and not close to 1 because S is controlled by Ti-O-type bonds not Sr-O-type bonds, as assumed in earlier work. The band offsets on silicon are asymmetric with a much smaller offset at the conduction band, so that Ta2O5 and barium strontium titanate are relatively poor barriers to electrons on Si. © 1999 American Institute of Physics.

Schottky barrier heights of tantalum oxide, barium strontium titanate, lead zirconate titanate and strontium bismuth tantalate

Schottky barrier heights of various metals on tantalum pentoxide, barium strontium titanate, lead zirconate-titanate and strontium bismuth tantalate have been calculated as a function of metal work function. These oxides have a dimensionless Schottky barrier pinning factor, S, of 0.28 - 0.4 and not close to 1, because S is controlled by the Ti-O type bonds not Sr-O type bonds, as assumed previously. Band offsets on silicon are asymmetric with much smaller offset at the conduction band, so that Ta2O5 and barium strontium titanate (BST) are relatively poor barriers to electrons on Si.

Design and coupled-effect simulations of CMOS micro gas-sensors built on SOI thin membranes

This paper describes coupled-effect simulations of smart micro gas-sensors based on standard BiCMOS technology. The smart sensor features very low power consumption, high sensitivity and potential low fabrication cost achieved through full CMOS integration. For the first time the micro heaters are made of active CMOS elements (i.e. MOSFET transistors) and embedded in a thin SOI membrane consisting of Si and SiO2 thin layers. Micro gas-sensors such as chemoresistive, microcalorimeteric and Pd/polymer gate FET sensors can be made using this technology. Full numerical analyses including 3D electro-thermo-mechanical simulations, in particular stress and deflection studies on the SOI membranes are presented. The transducer circuit design and the post-CMOS fabrication process, which includes single sided back-etching, are also reported.

Design and simulations of SOI CMOS micro-hotplate gas sensors

This paper describes a new generation of integrated solid-state gas-sensors embedded in SOI micro-hotplates. The micro-hotplates lie on a SOI membrane and consist of MOSFET heaters that elevate the operating temperature, through self-heating, of a gas sensitive material. These sensors are fully compatible with SOI CMOS or BiCMOS technologies, offer ultra-low power consumption (under 100 mW), high sensitivity, low noise, low unit cost, reproducibility and reliability through the use of on-chip integration. In addition, the new integrated sensors offer a nearly uniform temperature distribution over the active area at its operating temperatures at up to about 300-350°C. This makes SOI-based gas-sensing devices particularly attractive for use in handheld battery-operated gas monitors. This paper reports on the design of a chemo-resistive gas sensor and proposes for the first time an intelligent SOI membrane microcalorimeter using active micro-FET heaters and temperature sensors. A comprehensive set of numerical and analogue simulations is also presented including complex 2D and 3D electro-thermal numerical analyses. © 2001 Elsevier Science B.V. All rights reserved.

Multi-field simulations and characterization of CMOS-MEMS high-temperature smart gas sensors based on SOI technology

This paper describes multiple field-coupled simulations and device characterization of fully CMOS-MEMS-compatible smart gas sensors. The sensor structure is designated for gas/vapour detection at high temperatures (>300 °C) with low power consumption, high sensitivity and competent mechanic robustness employing the silicon-on-insulator (SOI) wafer technology, CMOS process and micromachining techniques. The smart gas sensor features micro-heaters using p-type MOSFETs or polysilicon resistors and differentially transducing circuits for in situ temperature measurement. Physical models and 3D electro-thermo-mechanical simulations of the SOI micro-hotplate induced by Joule, self-heating, mechanic stress and piezoresistive effects are provided. The electro-thermal effect initiates and thus affects electronic and mechanical characteristics of the sensor devices at high temperatures. Experiments on variation and characterization of micro-heater resistance, power consumption, thermal imaging, deformation interferometry and dynamic thermal response of the SOI micro-hotplate have been presented and discussed. The full integration of the smart gas sensor with automatically temperature-reading ICs demonstrates the lowest power consumption of 57 mW at 300 °C and fast thermal response of 10 ms. © 2008 IOP Publishing Ltd.