Behavior of Ca(OH)2/CaO pellet under dehydration and hydration

With construction of a thermochemical energy conversion prototype system to store solar heat, thermal dissociation of pellets of Ca(OH)2 and hydration of CaO have been investigated in some detail for its application to the system. The inorganic substance is very attractive as a material for long term heat storage, but molar density changes associated with the reaction are fairly large. Therefore, this factor has been taken into account in the kinetic equation. The importance of additives and pellet size has been discussed considering reactivity and strength of pellets. An analysis has been attempted when chemical reaction is important. The deformation of pellets was observed during hydration.

Brush plated CdSe films and their photoelectrochemical characteristics

The brush plating technique has been employed for the first time to obtain CdSe films on Ti and conducting glass substrates. These films have been annealed in an argon atmosphere and their structural, optical and photoelectrochemical properties are discussed. The power conversion efficiency has been found to be 7.43% under an illumination of 80 mW cm-2. A peak quantum efficiency of 0.64 is obtained for an incident wavelength of 720 nm. Donor concentration of 3.42 x 10(17) cm-3, electron mobility of 3 cm2 V-1 s-1 and minority carrier diffusion length of 0.013 mum have been obtained.

Effect of sodium diffusion on the structural and electrical properties of Cu2ZnSnS4 thin films

Cu2ZnSnS4 (CZTS) is a kesterite semiconductor consisting of abundantly available elements. It has a band gap of 1.5 eV and a large absorption coefficient. Hence, thin films made of this material can be used as absorber layers of a solar cell. CZTS films were deposited on soda lime and Na free borosilicate glass substrates through Ultrasonic Spray Pyrolysis. The diffusion of sodium from soda lime glass was found to have a profound effect on characteristics like grain size, crystal texture and conductivity of CZTS thin films. Copper ion concentration also varied during the deposition and it was observed that the carrier concentration was enhanced when there was a deficiency of copper in the films. The effect of sodium diffusion and copper deficiency in enhancing the structural and electrical properties of CZTS films are presented in this paper. (C) 2010 Elsevier B.V. All rights reserved.

Nanoscale ZnO/CdS heterostructures with engineered interfaces for high photocatalytic activity under solar radiation

Semiconductor based nanoscale heterostructures are promising candidates for photocatalytic and photovoltaic applications with the sensitization of a wide bandgap semiconductor with a narrow bandgap material being the most viable strategy to maximize the utilization of the solar spectrum. Here, we present a simple wet chemical route to obtain nanoscale heterostructures of ZnO/CdS without using any molecular linker. Our method involves the nucleation of a Cd-precursor on ZnO nanorods with a subsequent sulfidation step leading to the formation of the ZnO/CdS nanoscale heterostructures. Excellent control over the loading of CdS and the microstructure is realized by merely changing the initial concentration of the sulfiding agent. We show that the heterostructures with the lowest CdS loading exhibit an exceptionally high activity for the degradation of methylene blue (MB) under solar irradiation conditions; microstructural and surface analysis reveals that the higher activity in this case is related to the dispersion of the CdS nanoparticles on the ZnO nanorod surface and to the higher concentration of surface hydroxyl species. Detailed analysis of the mechanism of formation of the nanoscale heterostructures reveals that it is possible to obtain deterministic control over the nature of the interfaces. Our synthesis method is general and applicable for other heterostructures where the interfaces need to be engineered for optimal properties. In particular, the absence of any molecular linker at the interface makes our method appealing for photovoltaic applications where faster rates of electron transfer at the heterojunctions are highly desirable.

Photocatalytic Inactivation of Escherichia coli with LbL Fabricated Immobilized TiO2 Thin Films

Photocatalysis using semiconductor catalyst such as TiO2, in presence of UV light, is a promising technique for the inactivation of various microorganisms present in water. In the current study, the photocatalytic inactivation of Escherichia coli bacteria was studied with commercial Degussa Aeroxide TiO2 P25 (Aeroxide) and combustion synthesized TiO2 (CS TiO2) catalysts immobilized on glass slides in presence of UV irradiation. Thin films of the catalyst and polyelectrolytes, poly(allyl amine hydrochloride) and poly(styrene sulfonate sodium salt), were deposited on glass slides by layer by layer (LbL) deposition method and characterized by SEM and AFM imaging. The effect of various parameters, namely, catalyst concentration, surface area and number of bilayers, on inactivation was studied. Maximum inactivation of 8-log reduction in the viable count was observed with 1.227 mg/cm(2) of catalyst loaded slides. With this loading, complete inactivation was observed within 90 min and 75 min of irradiation, for Aeroxide and CS TiO2, respectively. Further increase in the catalyst concentration or increasing number of bilayers had no significant effect on inactivation. The effect of surface area on the inactivation was studied by increasing the number of slides and the inactivation was observed to increase with increasing surface area. It was also observed that the immobilized catalyst slides can be used for several cycles leading to an economic process. The study shows potential application of TiO2, for the inactivation of bacteria, in its fixed form by a simple immobilization technique.

Ferromagnetic La0.6Pb0.4MnO3 thin films with giant magnetoresistance at 300 K

Highly textured, as-deposited La0.6Pb0.4MnO3 thin films have been grown on LaAlO3 by pulsed laser deposition. The films are ferromagnetic metals below 300 K. Giant negative magnetoresistance of over 40% is observed at 300 K at 6 T.

Growth and applications of superconducting and nonsuperconducting oxide epitaxial films

Growth and characterization of high-temperature-superconducting YBa2Cu3O7 and several metallic-oxide thin films by pulsed laser deposition is described here. An overview of substrates employed for epitaxial growth of perovskite-related oxides is presented. Ag-doped YBa2Cu3O7 films grown on bare sapphire are shown to give T-c = 90 K, critical current > 10(6) A/cm(2) at 77 K and surface resistance = 450 mu Omega. Application of epitaxial metallic LaNiO3 thin films as an electrode for ferroelectric oxide and as a normal metal layer barrier in the superconductor-normal metal-superconductor (SNS) Josephson junction is presented. Observation of giant magnetoresistance (GMR) in the metallic La0-6Pb0-4MnO3 thin films up to 50% is highlighted.

Growth and characterization of laser-deposited Ag-doped YBa2Cu3O7−x thin films on bare sapphire

Microstructural and superconducting properties of YBa2Cu3O7-x thin films grown in situ on bare sapphire by pulsed laser deposition using YBa2Cu3O7-x targets doped with 7 and 10 wt% Ag have been studied. Ag-doped films grown at 730 degrees C on sapphire have shown very significant improvement over the undoped YBa2Cu3O7-x films grown under identical condition. A zero resistance temperature of 90 K and a critical current density of 1.2 x 10(6) A/cm(2) at 77 K have been achieved on bare sapphire for the first time. Improved connectivity among grains and reduced reaction rate between the substrate and the film caused due to Ag in the film are suggested to be responsible for this greatly improved transport properties.

Spectroscopic Studies on Silver Selenide Thin Films

Silver selenide thin films of thickness between 80 nm and 160 nm were prepared by thermal evaporation technique at a high vacuum better than 2x10(-5)mbar on well cleaned glass substrates at a deposition rate of 0.2 nm/sec. Silver selenide thin films were polycrystalline with orthorhombic structure. Ellipsometric spectra of silver selenide thin films have been recorded in the wavelength range between 300 nm and 700 nm. Optical constants like refractive index, extinction coefficient, absorption coefficient, and optical band gap of silver selenide thin film have been calculated from the recorded spectra. The refractive index of silver selenide has been found to vary between 1.9 and 3.2 and the extinction coefficient varies from 0.5 to 1.6 with respect to their corresponding thickness of the films. Transmittance spectra of these films have been recorded in the wavelength range between 300 nm and 900 nm and its spectral data are analysed. The photoluminescence studies have been carried out on silver selenide thin films and the strong emission peak is found around 1.7 eV. The calculated optical band of thermally evaporated silver selenide thin films is found to be around 1.7 eV from their Ellipsometric, UV-Visible and Photoluminescence spectroscopic studies.

Pulsed laser deposition of strontium titanate thin films for dynamic random access memory applications

Polycrystalline strontium titanate (SrTiO3) films were prepared by a pulsed laser deposition technique on p-type silicon and platinum-coated silicon substrates. The films exhibited good structural and dielectric properties which were sensitive to the processing conditions. The small signal dielectric constant and dissipation factor at a frequency of 100 kHz were about 225 and 0.03 respectively. The capacitance-voltage (C-V) characteristics in metal-insulator-semiconductor structures exhibited anomalous frequency dispersion behavior and a hysteresis effect. The hysteresis in the C-V curve was found to be about 1 V and of a charge injection type. The density of interface states was about 1.79 x 10(12) cm(-2). The charge storage density was found to be 40 fC mu m(-2) at an applied electric field of 200 kV cm(-1). Studies on current-voltage characteristics indicated an ohmic nature at lower voltages and space charge conduction at higher voltages. The films also exhibited excellent time-dependent dielectric breakdown behavior.

Substrate-dependent structure, microstructure, composition and properties of nanostructured TiN films

Titanium nitride films of a thickness of similar to 1.5 mu m were deposited on amorphous and crystalline substrates by DC reactive magnetron sputtering at ambient temperature with 100% nitrogen in the sputter gas. The growth of nanostructured, i.e. crystalline nano-grain sized, films at ambient temperature is demonstrated. The microstructure of the films grown on crystalline substrates reveals a larger grain size/crystallite size than that of the films deposited on amorphous substrates. Specular reflectance measurements on films deposited on different substrates indicate that the position of the Ti-N 2s band at 2.33 eV is substrate-dependent, indicating substrate-mediated stoichiometry. This clearly demonstrates that not only structure and microstructure, but also chemical composition of the films is substrate-influenced. The films deposited on amorphous substrates display lower hardness and modulus values than the films deposited on crystalline substrates, with the highest value of hardness being 19 GPa on a lanthanum aluminate substrate. (C) 2011 Elsevier Ltd. All rights reserved.

Scanning tunneling microscopy and spectroscopy of C70 thin films

Scanning tunneling microscopy of C-70 films deposited on HOPG and gold substrates has been carried but to investigate the 2D packing, defects and disorder. Besides providing direct evidence for orientational disorder, high resolution; images showing the carbon skeleton as well as the molecular arrangement in a solid solution of C-70 and C-60 are presented. Tunneling conductance measurements Indicate a small gap in the C-70 film deposited on HOPG substrate.

Study of electrical properties of pulsed excimer laser deposited strontium titanate films

Polycrystalline SrTiO3 films were prepared by pulsed excimer laser ablation on Si and Pt coated Si substrates. Several growth parameters were varied including ablation fluence, pressure, and substrate temperature. The structural studies indicated the presence of [100] and [110] oriented growth after annealing by rapid thermal annealing at 600-degrees-C for 60 s. Deposition at either lower pressures or at higher energy densities encouraged film growth with slightly preferred orientation. The scanning electron microscopy studies showed the absence of any significant particulates on the film surface. Dielectric studies indicated a dielectric constant of 225, a capacitance density of 3.2 fF/mum2, and a charge density of 40 fC/mum for films of 1000 nm thick. The dc conductivity studies on these films suggested a bulk limited space charge conduction in the high field regime, while the low electric fields induced an ohmic conduction. Brief time dependent dielectric breakdown studies on these films, under a field of 250 kV/cm for 2 h, did not exhibit any breakdown, indicating good dielectric strength.

Surface barrier effects in non-resonant microwave absorption by superconducting thin films of YBa2Cu3O7??

We present an unusual temperature dependence of hysteresis in the Lion resonant microwave absorption (NRMA) signals from superconducting thin films of YBa2Cu3O7-delta. We observe that the hysteresis increases with increase in temperature till T-c which we interpret as evidence for the presence of Bean-Livingston surface barriers (BLSB) in the single crystalline films.