Hole nucleation and growth induced by crystallization and microphase separation of thin semicrystalline diblock copolymer films

We have investigated the hole nucleation and growth induced by crystallization of thin crystalline-coil diblock copolymer films. Semicrystalline rodlike assemblies from neutral/selective binary solvent are used as seeds to nucleate crystallization at temperatures above the glass transition temperature (T-g) but below melting point (T-m). The crystallization of nanorods drives neighboring copolymer chains to diffuse into the growing nanorods. Depletion of copolymer chains yields hole nucleation and growth at the edge of the nanorods. Simultaneously, the polymer chains unassociated into the nanorods were oriented by induction from the free surface and the substrate, leading to limitation of the hole depth to the lamellar spacing, similar to20 nm. The holes, as well as the nanorods, grow as t(alpha), where t is the annealing time and a crossover in the exponent a. is found. The orientation and stretching of the copolymer chains by the surface and interface are believed to accelerate the crystallization, and in turn, the latter accelerates the growth rate of the holes. At T > T-m, the grains melt and the copolymer chains relax and flow into the first layer of the film.

Annealing effects on the surface morphologies of thin PS/PMMA blend films with different film thickness

The surface morphology evolution of three thin polystyrene (PS)/polymethyl methacrylate (PMMA) blend films (<70 nm) on SiOx substrates upon annealing were investigated by atomic force microscopy (AFM) and some interesting phenomena were observed. All the spin-coated PS/PMMA blend films were not in thermodynamic equilibrium. For the 67.1 and the 27.2 nm PS/PMMA blend films, owing to the low mobility of the PMMA-rich phase layer at substrate surfaces and interfacial stabilization caused by long-range van der Waals forces of the substrates, the long-lived metastable surface morphologies (the foam-like and the bicontinuous morphologies) were first observed. For the two-dimensional ultrathin PS/PMMA blend film (16.3 nm), the discrete domains of the PS-rich phases upon the PMMA-rich phase layer formed and the secondary phase separation occurred after a longer annealing time.

Organic thin-film transistors having inorganic/organic double gate insulators

Bottom-contact organic thin-film transistors (BC OTFTs) based on inorganic/organic double gate insulators were demonstrated. The double gate insulators consisted of tantalum pentoxide (Ta2O5) with high dielectric constant (kappa) as the first gate insulator and octadecyltrichlorosilane (OTS) with low kappa as the second gate insulator. The devices have carrier mobilities larger than 10(-2) cm(2)/V s, on/off current ratio greater than 10(5), and the threshold voltage of -14 V, which is threefold larger field-effect mobility and an order of magnitude larger on/off current ratio than the OTFTs with a Ta2O5 gate insulator. The leakage current was decreased from 2.4x10(-6) to 7.4x10(-8) A due to the introduction of the OTS second dielectric layer. The results demonstrated that using inorganic/organic double insulator as the gate dielectric layer is an effective method to fabricate OTFTs with improved electric characteristics.

Organic thin-film transistors in sandwich configuration

Organic thin-film transistors (OTFTs) having source/drain electrodes sandwiched between copper phthalocyanine (CuPc) and cobalt phthalocyanine (CoPc) layers, CuPc/CoPc SC OTFTs, are investigated. Comparing their properties with that of CuPc-based top-contact OTFT, field-effect mobility increases from 0.04 to 0.11 cm(2)/Vs, threshold voltage shifts from -13.8 to -8.9 V, and the current on/off ratio maintains at a level of 10(5). A top-contact OTFT with a layer of CuPc and a layer of CoPc (10%)-CuPc mixture reveals that the combination of CuPc and CoPc enhances charge injection from the source electrode into the active layer and increases the off-state current. The sandwich configuration increases the field-effect mobility, reduce the threshold voltage, and improve the on/off ratio at the same time. Our results indicate that using a double-layer of active organic materials in sandwich configuration is an effective way to improve OTFT performance.

Improved n-type organic transistors by introducing organic heterojunction buffer layer under source/drain electrodes

N-type organic thin-film transistors (OTFTs) employing hexadecafluorophthalocyaninatocopper (F16CuPc) as active layer and p-type copper phthalocyanine (CuPc) as buffer layer are demonstrated. The highest field-effect mobility is 7.6x10(-2) cm(2)/V s. The improved performance was attributed to the decrease of contact resistance due to the introduction of highly conductive F16CuPc/CuPc organic heterojunction. Therefore, current method provides an effective path to improve the performance of OTFTs.

Effect of crystallization on the lamellar orientation in thin films of symmetric poly(styrene)-b-poly(L-lactide) diblock copolymer

The effect of crystallization on the lamellar orientation of poly( styrene)-b-poly(L-lactide) (PS-PLLA) semicrystalline diblock copolymer in thin films has been investigated by atomic force microscopy (AFM), transmission electronic microscopy (TEM), and X-ray photoelectron spectroscopy (XPS). In the melt state, microphase separation leads to a symmetric wetting structure with PLLA blocks located at both polymer/substrate and polymer/air interfaces. The lamellar period is equal to the long period L in bulk determined by small-angle X-ray scattering (SAXS). Symmetric wetting structure formed in the melt state provides a model structure to study the crystallization of PLLA monolayer tethered on glassy (T-c < T-g,T-PS) or rubber (T-c > T-g,T-PS) PS substrate. In both cases, it is found that the crystallization of PLLA results in a "sandwich" structure with amorphous PS layer located at both folding surfaces. For T-c <= T-g,T- PS, the crystallization induces a transition of the lamellar orientation from parallel to perpendicular to substrate in between and front of the crystals. In addition, the depletion of materials around the crystals leads to the formation of holes of 1/2 L, leaving the adsorbed monolayer exposure at the bottom of the holes.

An effective layer-by-layer adsorption and polymerization method to the fabrication of polyoxometalate-polypyrrole nanoparticle ultrathin films

A layer-by-layer (LbL) adsorption and polymerization method was developed for the controllable preparation of polypyrrole (PPy) nanoparticles within ultrathin films. By repetitive adsorption of pyrrole and subsequent polymerization with 12-molybdophosphoric acid, the polyelectrolyte multilayer films containing PPy nanoparticles were fabricated. UV-visible absorption spectrocopy, Fourier transform infrared (FTIR) spectroscopy, atomic force microscopy (AFM), transmission electron microscopy (TEM) and cyclic voltammograras (CVs) were used to characterize the PPy nanoparticles and their multilayer thin films. UV-visible spectra indicate that the growth of PPy nanoparticles was regular and occurred within the polyelectrolyte films. The size of prepared PPy nanoparticles was found by TEM to increase with the increasing of polymerization cycles. The electrochemistry behavior of the multilayer thin films was studied in detail on ITO. The results suggest that the LbL adsorption and polymerization method developed herein provides an effective way to prepare PPy nanoparticles in the polymer matrix.

Surface and interface morphology of polystyrene/poly(methyl methacrylate) thin-film blends and bilayers

The surface and interface morphologies of polystyrene (PS)/poly(methyl methacrylate) (PMMA) thin-film blends and bilayers were investigated by means of atomic force microscopy (AFM) and X-ray photoelectron spectroscopy. Spin-coating a drop of a PS solution directly onto a PMMA bottom layer from a common solvent for both polymers yielded lateral domains that exhibited a well-defined topographical structure. Two common solvents were used in this study. The structure of the films changed progressively as the concentration of the PS solution was varied. The formation of the blend morphology could be explained by the difference in the solubility of the two polymers in the solvent and the dewetting of PS-rich domains from the PMMA-rich phase. Films of the PS/PMMA blend and bilayer were annealed at temperatures above their glass-transition temperatures for up to 70 h. All samples investigated with AFM were covered with PS droplets of various size distributions. Moreover, we investigated the evolution of the annealed PS/PMMA thin-film blend and bilayer and gave a proper explanation for the formation of a relatively complicated interface inside a larger PS droplet.

An investigation on air stability of copper phthalocyanine-based organic thin-film transistors and device encapsulation

The device performances of copper phthalocyanine (CuPc)-based organic thin-film transistors (OTFTs) in main components of air were studied. We found that the device stored in O-2 humidified by water exhibited the changes of electric characteristics including positive-shifted threshold voltage and lower I-on/I-off but unchanged mobility, which was similar to the device exposed to room air. These changes are attributed to O-2 doping to copper phthalocyanine thin film assisted by water. Furthermore, a cross-linked polyvinyl alcohol film was used as encapsulation layer to prevent the permeation of O-2 and water, which resulted in excellent stability even when devices were placed in air for over a year. Therefore, current studies will push the development of OTFTs for practical applications.

Crystallization of weakly segregated poly(styrene-b-epsilon-caprolactone) diblock copolymer in thin films

The surface morphology and crystallization behavior of a weakly segregated symmetric diblock copolymer, poly(styrene-b-6-caprolactone) (PS-b-PCL), in thin films were investigated by optical microscopy, X-ray photoelectron spectroscopy, and atomic force microscopy (AFM). When the samples were annealed in the molten state, surface-induced ordering, that is, relief structures with uniform thickness or droplets in the adsorbed monolayer, were observed depending on the annealing temperature. The polar PCL block preferred to wet the surface of a silicon wafer, while the PS block wet the air interface. This asymmetric wetting behavior led to the adsorbed monolayer with a PCL block layer having a thickness of around 4.0 nm. The crystallization of PCL blocks could overwhelm the microphase-separated structure because of the weak segregation. In situ observation of crystal growth indicated that the nucleation process preferred to occur at the edge of the thick parts of the film, that is, the relief structures or droplets. The crystal growth rate was presented by the time dependence of the distance between the tip of crystal clusters and the edge. At 22 and 17 degreesC, the average crystal growth rates were 55 +/- 10 and 18 +/- 4 nm/min, respectively.

Sol-gel synthesis and photoluminescent properties of LaPO4 : A (A = Eu3+, Ce3+, Tb3+) nanocrystalline thin films

Rare-earth ion (Eu3+, Tb3+, Ce3+)- doped LaPO4 nanocrystalline thin films and their patterning were fabricated by a Pechini sol-gel process combined with soft lithography on silicon and silica glass substrates. X-Ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), thermogravimetric and differential thermal analysis (TG-DTA), atomic force microscopy (AFM), scanning electron microcopy (SEM), optical microscopy, absorption and photoluminescence (PL) spectra as well as lifetimes were used to characterize the resulting films. The results of XRD indicate that the films begin to crystallize at 700 degreesC and the crystallinity increases with increasing annealing temperature. The morphology of the thin film depends on the annealing temperature and the number of coating layers. The 1000 degreesC annealed single layer film is transparent to the naked eye, uniform and crack-free with a thickness of about 200 nm and an average grain size of 100 nm. Patterned thin films with different strip widths ( 5 - 50 mm) were obtained by micromolding in capillaries ( soft lithography). The doped rare earth ions show their characteristic emission in the nanocrystalline LaPO4 films, i.e., Eu3+ D-5(0)-F-7(J) (J = 1, 2, 3, 4), Tb3+ D-5(3,4) - F-7(J) ( J = 6, 5, 4, 3, 2) and Ce3+ 5d-4f transition emissions, respectively. Both the lifetimes and the PL intensities of Eu3+ and Tb3+ increase with increasing annealing temperature, and the optimum concentrations for them were determined to be 5 mol% and 16 mol% of La3+ in LaPO4 thin films, respectively. An energy transfer phenomenon from Ce3+ to Tb3+ has been observed in LaPO4 nanocrystalline thin films, and the energy transfer efficiency depends on the doping concentration of Tb3+ if the concentration of Ce3+ is fixed.

Sol-gel fabrication, patterning and photoluminescent properties of LaPO4 : Ce3+, Tb3+ nanocrystalline thin films

Ce3+ and/or Tb3+-doped LaPO4 nanocrystalline thin films and their patterning were fabricated by a sol-gel process combined with soft lithography on silicon and quartz glass substrates. The results of XRD indicated that the films began to crystallize at 700 degreesC. The 1000 degreesC annealed single layer films are transparent by eyes, uniform and crack-free with a thickness of about 200 nm and an average grain size of 100 nm. Patterned thin film with different band widths (5-50 mum) were obtained by micro-molding in capillaries technique. The luminescence and energy transfer properties of Ce3+ and Tb3+ were studied in LaPO4 films.

Surface morphology control of immiscible polymer-blend thin films

The effects of the molecular weights (molecular weight of polystyrene, M-w,M-PS, varying from 2.9 to 129 k) on the surface morphologies of spin-coated and annealed polystyrene/poly (methyl methacrylate) (PS/PMMA = 50/50, w/w) blend films were investigated by atomic force microscopy and X-ray photoelectron spectroscopy. For the spin-coated films, when the M-w,M-PS varied from 2.9 to 129 k, three different kinds of surface morphologies (a nanophase-separated morphology, a PMMA cellular or network-like morphology whose meshes filled with PS, a sea-island like morphology) were observed and their formation mechanisms are discussed, respectively. Upon annealing, two different morphology-evolution processes were observed. It is found that a upper PS-rich phase layer is formed when M-w,M-PS < 4 k, and this behavior is mainly attributed to the low interfacial tension between PS and PMMA component. When M-w,M-PS > 4 k, the PS-rich phase forms droplets on top of the PMMA-rich phase layer which wets the SiOx substrate. These results indicate that the surface morphology of the polymer blend films can be controlled by the polymer molecular weight and annealing conditions.

Inhibition of thin polystyrene film dewetting via phase separation

By addition of a small amount of poly(methyl methacrylate) (PMMA) into polystyrene (PS), we present a novel approach to inhibit the dewetting process of thin PS film through phase separation of the off-critical polymer mixture (PS/PMMA). Owing to the preferential segregation of PMMA to the solid SiOx substrate, a nanometer thick layer, rich in PMMA phase, is formed. It is this diffusive PMMA-rich phase layer near the substrate that alters the dewetting behavior of the PS film. The degree of inhibition of dewetting depends on the concentration and molecular weight of PMMA component. PMMA with low (15.9k) and intermediate (102.7k) molecular weight stabilizes the films more effectively than that with a higher molecular weight (387k).

Bottom-contact organic field-effect transistors having low-dielectric layer under source and drain electrodes

An organic thin-film transistor (OTFT) having a low-dielectric polymer layer between gate insulator and source/drain electrodes is investigated. Copper phthalocyanine (CuPc), a well-known organic semiconductor, is used as an active layer to test performance of the device. Compared with bottom-contact devices, leakage current is reduced by roughly one order of magnitude, and on-state current is enhanced by almost one order of magnitude. The performance of the device is almost the same as that of a top-contact device. The low-dielectric polymer may play two roles to improve OTFT performance. One is that this structure influences electric-field distribution between source/drain electrodes and semiconductor and enhances charge injection. The other is that the polymer influences growth behavior of CuPc thin films and enhances physical connection between source/drain electrodes and semiconductor channel. Advantages of the OTFT having bottom-contact structure make it useful for integrated plastic electronic devices.