Selectively filled photonic liquid crystal fibers = Fibras de cristal fotónico selectivamente llenas con cristal líquido

El presente trabajo de Tesis se ha centrado en el diseño, fabricación y caracterización de dispositivos basados en fibras de cristal fotónico infiltrado selectivamente con cristales líquidos, polímeros y una mezcla de ambos. Todos los dispositivos son sintonizables, y su área de aplicación se centra en comunicaciones ópticas y sensores. La manipulación y fusionado de fibras fotónicas, el llenado selectivo de determinadas cavidades y la alineación recíproca de fibras mantenedoras de polarización son tareas muy específicas y delicadas para las que se requieren protocolos muy estrictos. Previo a la fabricación de dispositivos ha sido necesaria por tanto una tarea de sistematización y creación de protocolos de fabricación. Una vez establecidos se ha procedido a la fabricación y caracterización de dispositivos. Los dispositivos fabricados se enumeran a continuación para posteriormente detallar una a una las singularidades de cada uno. • Interferómetros intermodales hechos a partir de una porción de fibra fotónica soldada entre dos fibras estándar, bien monomodo o PANDA (mantenedora de polarización). Estos interferómetros han sido sumergidos o bien llenados selectivamente con cristales líquidos para así sintonizar la señal interferométrica guiada a través de la fibra. • Infiltración de fibras fotónicas con cristales líquidos colestéricos con especial énfasis en la fase azul (blue phase) de estos materiales. Las moléculas de cristal líquido se autoalinean en volumen por lo que la infiltración de fibras fotónicas con estos cristales líquidos es muy interesante, pues es conocida la dificultad de alinear apropiadamente cristales líquidos dentro de cavidades micrométricas de las fibras fotónicas. • Grabación de redes holográficas de forma selectiva en las cavidades de una fibra fotónica. Estas redes holográficas, llamadas POLICRYPS (POlymer-LIquid CRYstal-Polymer Slices), son redes fabricadas a base de franjas de polímero y cristal líquido alineado perpendicularmente a dichas franjas. Las franjas son a su vez perpendiculares al eje de la fibra como lo puede ser una red de Bragg convencional. El cristal líquido, al estar alineado perpendicularmente a dichos franjas y paralelo al eje de la fibra, se puede conmutar aplicando un campo eléctrico externo, modificando así el índice efectivo de la red. Se puede fabricar por lo tanto una red de Bragg sintonizable en fibra, muy útil en comunicaciones ópticas. • Llenado selectivo de fibras fotónicas con polidimetilsiloxano (PDMS), un polímero de tipo silicona. Si se realiza un llenado selectivo asimétrico se puede inducir birrefringencia en la fibra. El índice de refracción del PDMS tiene una fuerte dependencia térmica, por lo que se puede sintonizar la birrefringencia de la fibra. • Estudio teórico de llenado selectivo de fibras fotónicas con PDMS dopado con nanopartículas de plata de 5, 40 y 80 nm. Estas nanopartículas poseen un pico de absorción en torno a los 450 nm debido a resonancias superficiales localizadas de plasmones (LSPR). La resonancia del plasmon tiene una fuerte dependencia con el índice de refracción del material colindante, y al ser éste PDMS, la variación de índice de refracción se ve amplificada, obteniendo una absorción sintonizable. Se ha propuesto la fabricación de polarizadores sintonizables usando esta técnica. Como ya se ha dicho, previamente a la fabricación ha sido necesaria la protocolización de diversos procedimientos de fabricación de alta complejidad, así como protocolizar el proceso de toma de medidas para optimizar los resultados. Los procedimientos que han requerido la formulación de protocolos específicos han sido los siguientes: • Llenado selectivo de cavidades en una fibra fotónica. Dichas fibras tienen generalmente un diámetro externo de 125 μm, y sus cavidades son de entre 5 y 10 μm de diámetro. Se han desarrollado tres técnicas diferentes para el llenado/bloqueado selectivo, pudiéndose combinar varios protocolos para la optimización del proceso. Las técnicas son las siguientes: o Llenado y bloqueado con un prepolímero. Dicho prepolímero, también llamado adhesivo óptico, está inicialmente en estado líquido y posee una cierta viscosidad. Las cavidades de la fibra fotónica que se desea llenar o bloquear poseen un diámetro diferente al resto, por lo que en el proceso de llenado aparecen dos frentes de llenado dependientes de su diámetro. A mayor diámetro, mayor velocidad de llenado. Polimerizando cuando existe dicha diferencia en los frentes se puede cortar por medio, obteniendo así una fibra parcialmente bloqueada. o Colapsamiento de las cavidades de menor diámetro mediante aplicación de calor. El calor producido por un arco voltaico de una soldadora de fibra estándar fusiona el material exterior de la fibra produciendo el colapsamiento de las cavidades de menor diámetro. En esta técnica también es necesaria una diferencia de diámetros en las cavidades de la fibra. o Bloqueo una a una de las cavidades de la fibra fotónica con adhesivo óptico. Este procedimiento es muy laborioso y requiere mucha precisión. Con este sistema se pueden bloquear las cavidades deseadas de una fibra sin importar su diámetro. • Alineación de una fuente de luz linealmente polarizada con una fibra mantenedora de polarización ya sea PANDA o fotónica. Así mismo también se han alineado entre sí fibras mantenedoras de polarización, para que sus ejes rápidos se fusionen paralelos y así el estado de polarización de la luz guiada se mantenga. • Sistematización de toma de medidas para caracterizar los interferómetros modales. Éstos son altamente sensibles a diversas variables por lo que el proceso de medida es complejo. Se deben aislar variables de forma estrictamente controlada. Aunque todos los dispositivos tienen en común el llenado selectivo de cavidades en una fibra fotónica cada dispositivo tiene sus peculiaridades, que van a ser explicadas a continuación. ABSTRACT The present Thesis has been centered in the design, fabrication and characterization of devices based on photonic crystal fibers selectively filled with liquid crystals, polymers and a mixture of both. All devices are tunable and their work field is optical communications and sensing The handling and splicing of photonic crystal fibers, the selective filling of their holes and the aligning of polarization maintaining fibers are very specific and delicate tasks for which very strict protocols are required. Before the fabrication of devices has therefore been necessary task systematization and creation of manufacturing protocols. Once established we have proceeded to the fabrication and characterization of devices. The fabricated devices are listed below and their peculiarities are detailed one by one: • Intermodal interferometers made with a portion of photonic crystal fiber spliced between two optical communication fiber pigtails, either single mode or PANDA (polarization-maintaining) fiber. These interferometers have been submerged or selectively filled with liquid crystals to tune the interferometric guided signal. • Infiltration of photonic fibers with cholesteric liquid crystals with special emphasis on their blue phase (blue phase). The liquid crystal molecules are self-aligning in volume so the infiltration of photonic fibers with these liquid crystals is very interesting. It is notoriously difficult to properly align liquid crystals within micron cavities such as photonic fibers. • Selectively recording of holographic gratings in the holes of photonic crystal fibers. These holographic gratings, called POLICRYPS (POlymer-LIquid CRYstal-Polymes Slices), are based on walls made of polymer and liquid crystal aligned perpendicular to them. These walls are perpendicular to the axis of the fiber as it can be a conventional Bragg grating. The liquid crystal is aligned perpendicular to the walls and parallel to the fiber axis, and can be switched by applying an external electric field and thus change the effective index of the grating. It is thus possible to manufacture a tunable Bragg grating fiber, useful in optical communications. •Asymmetrically selective filling of photonic crystal fibers with a silicone polymer like called polydimethylsiloxane (PDMS) to induce birefringence in the fiber. The refractive index of PDMS has temperature dependence, so that the birefringence of the fiber can be tuned. • Theoretical study of photonic crystal fibers selectively filled with PDMS doped with silver nanoparticles of 5, 40 and 80 nm. These nanoparticles have an absorption peak around 450 nm due to localized surface plasmon resonances (LSPR). Plasmon resonance has a strong dependence on the refractive index of the adjacent material, and as this is PDMS, the refractive index variation is amplified, obtaining a tunable absorption. Fabrication of tunable polarizers using this technique has been proposed. Before starting the fabrication, it has been necessary to optimize several very delicate procedures and different protocols have been designed. The most delicate procedures are as follows: • Selective filling of holes in a photonic crystal fiber. These fibers generally have an outer diameter of 125 μm, and their holes have a diameter around between 5 and 10 μm. It has been developed three different techniques for filling / selective blocking, and they can be combined for process optimization. The techniques are: o Filling and blocked with a prepolymer. This prepolymer also called optical adhesive is initially in liquid state and has a certain viscosity. The holes of the photonic crystal fiber that are desired to be filled or blocked should have a different diameter, so that in the filling process appear two different fronts depending on the hole diameter. The holes with larger diameter are filled faster. Then the adhesive is polymerized when there is such a difference on the front. A partially blocked fiber is obtained cutting between fronts. o Collapsing of holes of smaller diameter by application of heat. The heat produced by an arc of a standard fusion splicer fuses the outer fiber material producing the collapsing of the cavities of smaller diameter. In this technique also you need a difference of diameters in the fiber holes. o Blocking one by one the holes of photonic crystal fiber with optical adhesive. This procedure is very laborious and requires great precision. This system can block unwanted cavities regardless fiber diameter. • Aligning a linearly polarized light source with a polarization-maintaining fiber (either a PANDA fiber as a photonic crystal fiber). It is needed also an aligning between polarization-maintaining fibers, so that their fast axes parallel merge and that is state of polarization of light guided is maintained. • Systematization of taking measurements to characterize the modal interferometers. These are highly sensitive to several variables so the measurement process is very complicated. Variables must be fixed in a very controlled manner. Although all devices have the common characteristic of being selectively filled PCFs with some kind of material, each one has his own peculiarities, which are explained below.

Energy yield determination of concentrator solar cells using laboratory measurements

The annual energy conversion efficiency is calculated for a four junction inverted metamorphic solar cell that has been completely characterized in the laboratory at room temperature using measurements fit to a comprehensive optoelectronic model of the multijunction solar cells. A simple model of the temperature dependence is used redict the performance of the solar cell under varying temperature and spectra characteristic of Golden, CO for an entire year. The annual energy conversion efficiency is calculated by integrating the predicted cell performance over the entire year. The effects of geometric concentration, CPV system thermal characteristics, and luminescent coupling are ighlighted.

Broken symmetry and critical transport properties of random metals

Recent experimental data on the conductivity σ+(T), T → 0, on the metallic side of the metal–insulator transition in ideally random (neutron transmutation-doped) 70Ge:Ga have shown that σ+(0) ∝ (N − Nc)μ with μ = ½, confirming earlier ultra-low-temperature results for Si:P. This value is inconsistent with theoretical predictions based on diffusive classical scaling models, but it can be understood by a quantum-directed percolative filamentary amplitude model in which electronic basis states exist which have a well-defined momentum parallel but not normal to the applied electric field. The model, which is based on a new kind of broken symmetry, also explains the anomalous sign reversal of the derivative of the temperature dependence in the critical regime.

Large kinetic isotope effects in enzymatic proton transfer and the role of substrate oscillations

We propose an interpretation of the experimental findings of Klinman and coworkers [Cha, Y., Murray, C. J. & Klinman, J. P. (1989) Science 243, 1325–1330; Grant, K. L. & Klinman, J. P. (1989) Biochemistry 28, 6597–6605; and Bahnson, B. J. & Klinman, J. P. (1995) Methods Enzymol. 249, 373–397], who showed that proton transfer reactions that are catalyzed by bovine serum amine oxidase proceed through tunneling. We show that two different tunneling models are consistent with the experiments. In the first model, the proton tunnels from the ground state. The temperature dependence of the kinetic isotope effect is caused by a thermally excited substrate mode that modulates the barrier, as has been suggested by Borgis and Hynes [Borgis, D. & Hynes, J. T. (1991) J. Chem. Phys. 94, 3619–3628]. In the second model, there is both over-the-barrier transfer and tunneling from excited states. Finally, we propose two experiments that can distinguish between the possible mechanisms.

Unbinding forces of single antibody-antigen complexes correlate with their thermal dissociation rates

Point mutants of three unrelated antifluorescein antibodies were constructed to obtain nine different single-chain Fv fragments, whose on-rates, off-rates, and equilibrium binding affinities were determined in solution. Additionally, activation energies for unbinding were estimated from the temperature dependence of the off-rate in solution. Loading rate-dependent unbinding forces were determined for single molecules by atomic force microscopy, which extrapolated at zero force to a value close to the off-rate measured in solution, without any indication for multiple transition states. The measured unbinding forces of all nine mutants correlated well with the off-rate in solution, but not with the temperature dependence of the reaction, indicating that the same transition state must be crossed in spontaneous and forced unbinding and that the unbinding path under load cannot be too different from the one at zero force. The distance of the transition state from the ground state along the unbinding pathway is directly proportional to the barrier height, regardless of the details of the binding site, which most likely reflects the elasticity of the protein in the unbinding process. Atomic force microscopy thus can be a valuable tool for the characterization of solution properties of protein-ligand systems at the single molecule level, predicting relative off-rates, potentially of great value for combinatorial chemistry and biology.

Deuterium isotope effect on the intramolecular electron transfer in Pseudomonas aeruginosa azurin

Intramolecular electron transfer in azurin in water and deuterium oxide has been studied over a broad temperature range. The kinetic deuterium isotope effect, kH/kD, is smaller than unity (0.7 at 298 K), primarily caused by the different activation entropies in water (−56.5 J K−1 mol−1) and in deuterium oxide (−35.7 J K−1 mol−1). This difference suggests a role for distinct protein solvation in the two media, which is supported by the results of voltammetric measurements: the reduction potential (E0′) of Cu2+/+ at 298 K is 10 mV more positive in D2O than in H2O. The temperature dependence of E0′ is also different, yielding entropy changes of −57 J K−1 mol−1 in water and −84 J K−1 mol−1 in deuterium oxide. The driving force difference of 10 mV is in keeping with the kinetic isotope effect, but the contribution to ΔS‡ from the temperature dependence of E0′ is positive rather than negative. Isotope effects are, however, also inherent in the nuclear reorganization Gibbs free energy and in the tunneling factor for the electron transfer process. A slightly larger thermal protein expansion in H2O than in D2O (0.001 nm K−1) is sufficient both to account for the activation entropy difference and to compensate for the different temperature dependencies of E0′. Thus, differences in driving force and thermal expansion appear as the most straightforward rationale for the observed isotope effect.

Two recombination-dependent DNA replication pathways of bacteriophage T4, and their roles in mutagenesis and horizontal gene transfer

Two major pathways of recombination-dependent DNA replication, “join-copy” and “join-cut-copy,” can be distinguished in phage T4: join-copy requires only early and middle genes, but two late proteins, endonuclease VII and terminase, are uniquely important in the join-cut-copy pathway. In wild-type T4, timing of these pathways is integrated with the developmental program and related to transcription and packaging of DNA. In primase mutants, which are defective in origin-dependent lagging-strand DNA synthesis, the late pathway can bypass the lack of primers for lagging-strand DNA synthesis. The exquisitely regulated synthesis of endo VII, and of two proteins from its gene, explains the delay of recombination-dependent DNA replication in primase (as well as topoisomerase) mutants, and the temperature-dependence of the delay. Other proteins (e.g., the single-stranded DNA binding protein and the products of genes 46 and 47) are important in all recombination pathways, but they interact differently with other proteins in different pathways. These homologous recombination pathways contribute to evolution because they facilitate acquisition of any foreign DNA with limited sequence homology during horizontal gene transfer, without requiring transposition or site-specific recombination functions. Partial heteroduplex repair can generate what appears to be multiple mutations from a single recombinational intermediate. The resulting sequence divergence generates barriers to formation of viable recombinants. The multiple sequence changes can also lead to erroneous estimates in phylogenetic analyses.

Electrical investigation of p-type 4H-SiC heavily doped by ion implantation

In the last decades, an increasing interest in the research field of wide bandgap semiconductors was observed, mostly due to the progressive approaching of silicon-based devices to their theoretical limits. 4H-SiC is an example among these, and is a mature compound for applications. The main advantages offered 4H-SiC in comparison with silicon are an higher breakdown field, an higher thermal conductivity, a higher operating temperature, very high hardness and melting point, biocompatibility, but also low switching losses in high frequencies applications and lower on-resistances in unipolar devices. Then, 4H-SiC power devices offer great performance improvement; moreover, they can work in hostile environments where silicon power devices cannot function. Ion implantation technology is a key process in the fabrication of almost all kinds of SiC devices, owing to the advantage of a spatially selective doping. This work is dedicated to the electrical investigation of several differently-processed 4H-SiC ion- implanted samples, mainly through Hall effect and space charge spectroscopy experiments. It was also developed the automatic control (Labview) of several experiments. In the work, the effectiveness of high temperature post-implant thermal treatments (up to 2000°C) were studied and compared considering: (i) different methods, (ii) different temperatures and (iii) different duration of the annealing process. Preliminary p + /n and Schottky junctions were also investigated as simple test devices. 1) Heavy doping by ion implantation of single off-axis 4H-SiC layers The electrical investigation is one of the most important characterization of ion-implanted samples, which must be submitted to mandatory post-implant thermal treatment in order to both (i) recover the lattice after ion bombardment, and (ii) address the implanted impurities into lattice sites so that they can effectively act as dopants. Electrical investigation can give fundamental information on the efficiency of the electrical impurity activation. To understand the results of the research it should be noted that: (a) To realize good ohmic contacts it is necessary to obtain spatially defined highly doped regions, which must have conductivity as low as possible. (b) It has been shown that the electrical activation efficiency and the electrical conductivity increase with the annealing temperature increasing. (c) To maximize the layer conductivity, temperatures around 1700°C are generally used and implantation density high till to 10 21 cm -3 . In this work, an original approach, different from (c), is explored by the using very high annealing temperature, around 2000°C, on samples of Al + -implant concentration of the order of 10 20 cm -3 . Several Al + -implanted 4H-SiC samples, resulting of p-type conductivity, were investigated, with a nominal density varying in the range of about 1-5∙10 20 cm -3 and subjected to two different high temperature thermal treatments. One annealing method uses a radiofrequency heated furnace till to 1950°C (Conventional Annealing, CA), the other exploits a microwave field, providing a fast heating rate up to 2000°C (Micro-Wave Annealing, MWA). In this contest, mainly ion implanted p-type samples were investigated, both off-axis and on-axis <0001> semi-insulating 4H-SiC. Concerning p-type off-axis samples, a high electrical activation of implanted Al (50-70%) and a compensation ratio below 10% were estimated. In the work, the main sample processing parameters have been varied, as the implant temperature, CA annealing duration, and heating/cooling rates, and the best values assessed. MWA method leads to higher hole density and lower mobility than CA in equivalent ion implanted layers, resulting in lower resistivity, probably related to the 50°C higher annealing temperature. An optimal duration of the CA treatment was estimated in about 12-13 minutes. A RT resistivity on the lowest reported in literature for this kind of samples, has been obtained. 2) Low resistivity data: variable range hopping Notwithstanding the heavy p-type doping levels, the carrier density remained less than the critical one required for a semiconductor to metal transition. However, the high carrier densities obtained was enough to trigger a low temperature impurity band (IB) conduction. In the heaviest doped samples, such a conduction mechanism persists till to RT, without significantly prejudice the mobility values. This feature can have an interesting technological fall, because it guarantee a nearly temperature- independent carrier density, it being not affected by freeze-out effects. The usual transport mechanism occurring in the IB conduction is the nearest neighbor hopping: such a regime is effectively consistent with the resistivity temperature behavior of the lowest doped samples. In the heavier doped samples, however, a trend of the resistivity data compatible with a variable range hopping (VRH) conduction has been pointed out, here highlighted for the first time in p-type 4H-SiC. Even more: in the heaviest doped samples, and in particular, in those annealed by MWA, the temperature dependence of the resistivity data is consistent with a reduced dimensionality (2D) of the VRH conduction. In these samples, TEM investigation pointed out faulted dislocation loops in the basal plane, whose average spacing along the c-axis is comparable with the optimal length of the hops in the VRH transport. This result suggested the assignment of such a peculiar behavior to a kind of spatial confinement into a plane of the carrier hops. 3) Test device the p + -n junction In the last part of the work, the electrical properties of 4H-SiC diodes were also studied. In this case, a heavy Al + ion implantation was realized on n-type epilayers, according to the technological process applied for final devices. Good rectification properties was shown from these preliminary devices in their current-voltage characteristics. Admittance spectroscopy and deep level transient spectroscopy measurements showed the presence of electrically active defects other than the dopants ones, induced in the active region of the diodes by ion implantation. A critical comparison with the literature of these defects was performed. Preliminary to such an investigation, it was assessed the experimental set up for the admittance spectroscopy and current-voltage investigation and the automatic control of these measurements.

Condensados de Bose-Einstein em redes óticas: a transição superfluido-isolante de Mott em redes hexagonais e a classe de universalidade superfluido-vidro de Bose em 3D

Estudamos transições de fases quânticas em gases bosônicos ultrafrios aprisionados em redes óticas. A física desses sistemas é capturada por um modelo do tipo Bose-Hubbard que, no caso de um sistema sem desordem, em que os átomos têm interação de curto alcance e o tunelamento é apenas entre sítios primeiros vizinhos, prevê a transição de fases quântica superfluido-isolante de Mott (SF-MI) quando a profundidade do potencial da rede ótica é variado. Num primeiro estudo, verificamos como o diagrama de fases dessa transição muda quando passamos de uma rede quadrada para uma hexagonal. Num segundo, investigamos como a desordem modifica essa transição. No estudo com rede hexagonal, apresentamos o diagrama de fases da transição SF-MI e uma estimativa para o ponto crítico do primeiro lobo de Mott. Esses resultados foram obtidos usando o algoritmo de Monte Carlo quântico denominado Worm. Comparamos nossos resultados com os obtidos a partir de uma aproximação de campo médio e com os de um sistema com uma rede ótica quadrada. Ao introduzir desordem no sistema, uma nova fase emerge no diagrama de fases do estado fundamental intermediando a fase superfluida e a isolante de Mott. Essa nova fase é conhecida como vidro de Bose (BG) e a transição de fases quântica SF-BG que ocorre nesse sistema gerou muitas controvérsias desde seus primeiros estudos iniciados no fim dos anos 80. Apesar dos avanços em direção ao entendimento completo desta transição, a caracterização básica das suas propriedades críticas ainda é debatida. O que motivou nosso estudo, foi a publicação de resultados experimentais e numéricos em sistemas tridimensionais [Yu et al. Nature 489, 379 (2012), Yu et al. PRB 86, 134421 (2012)] que violam a lei de escala $\\phi= u z$, em que $\\phi$ é o expoente da temperatura crítica, $z$ é o expoente crítico dinâmico e $ u$ é o expoente do comprimento de correlação. Abordamos essa controvérsia numericamente fazendo uma análise de escalonamento finito usando o algoritmo Worm nas suas versões quântica e clássica. Nossos resultados demonstram que trabalhos anteriores sobre a dependência da temperatura de transição superfluido-líquido normal com o potencial químico (ou campo magnético, em sistemas de spin), $T_c \\propto (\\mu-\\mu_c)^\\phi$, estavam equivocados na interpretação de um comportamento transiente na aproximação da região crítica genuína. Quando os parâmetros do modelo são modificados de maneira a ampliar a região crítica quântica, simulações com ambos os modelos clássico e quântico revelam que a lei de escala $\\phi= u z$ [com $\\phi=2.7(2)$, $z=3$ e $ u = 0.88(5)$] é válida. Também estimamos o expoente crítico do parâmetro de ordem, encontrando $\\beta=1.5(2)$.

Cristalização assistida por destilação por membranas aplicada ao reuso de água: comparação com outros métodos de reuso, análise do processo e projeto hierárquico de processo.

No presente trabalho foram avaliados processos alternativos de dessalinização visando a recuperação e reuso da água contida em salmouras concentradas, sendo o processo de cristalização assistida por destilação por membranas (MDC) investigado com profundidade. Foi desenvolvido um modelo diferencial para o processo de destilação por membranas por contato direto (DCMD), contemplando métodos termodinâmicos rigorosos para sistemas aquosos de eletrólitos fortes, bem como mecanismos de transferência de calor e massa e efeitos de polarização de temperatura e concentração característicos deste processo de separação. Com base em simulações realizadas a partir do modelo matemático assim desenvolvido, foram investigados os principais parâmetros que influenciam o projeto de um módulo de membranas para DCMD. O modelo foi posteriormente estendido com equações de balanço de massa e energia adicionais para incluir a operação de cristalização e desta forma representar o processo de MDC. De posse dos resultados das simulações e do modelo estendido, foi desenvolvido um método hierárquico para o projeto de processos de MDC, com o objetivo de conferir características de rastreabilidade e repetibilidade a esta atividade. Ainda a partir do modelo MDC foram discutidos aspectos importantes em MDC como a possibilidade de nucleação e crescimento de cristais sobre a superfície das membranas, bem como o comportamento do processo com sais com diferentes características de solubilidade e largura da zona metaestável. Verificou-se que para sais cuja solubilidade varia muito pouco com a temperatura e que possuem zona metaestável com pequena largura, caso do NaCl, a operação com resfriamento no cristalizador não é viável pois aumenta excessivamente o consumo energético do processo, sendo nesses casos preferível a operação \"isotérmica\" - sem resfriamento no cristalizador - e o convívio com a possibilidade de nucleação no interior do módulo. No extremo oposto, observou-se que para sais com grande variabilidade da solubilidade com a temperatura, um pequeno resfriamento no cristalizador é suficiente para garantir condições de subsaturação no interior do módulo, sem grande ônus energético para o processo. No caso de sais com pequena variabilidade da solubilidade com a temperatura, mas com largura da zona metaestável elevada, existe certo ônus energético para a operação com resfriamento do cristalizador, porém não tão acentuado como no caso de sais com zona metaestável estreita. Foi proposto um fluxograma alternativo para o processo de MDC, onde foi introduzido um circuito de pré-concentração da alimentação antes do circuito de cristalização, para o caso de alimentação com soluções muito diluídas. Este esquema proporcionou um aumento do fluxo permeado global do processo e consequentemente uma redução na área total de membrana requerida. Verificou-se que através do processo com préconcentração da alimentação de 5% até 10% em massa - no caso de dessalinização de uma solução de NaCl - foi possível reduzir-se a área total da membrana em 27,1% e o consumo energético específico do processo em 10,6%, quando comparado ao processo sem pré-concentração. Foram desenvolvidas ferramentas úteis para o projeto de processos de dessalinização por MDC em escala industrial.

Induced Ti magnetization at La_(0.7)Sr_(0.3)MnO_(3) and BaTiO_(3) interfaces

In artificial multiferroics hybrids consisting of ferromagnetic La_(0.7)Sr_(0.3)MnO_(3) (LSMO) and ferroelectric BaTiO_(3) epitaxial layers, net Ti moments are found from polarized resonant soft x-ray reflectivity and absorption. The Ti dichroic reflectivity follows the Mn signal during the magnetization reversal, indicating exchange coupling between the Ti and Mn ions. However, the Ti dichroic reflectivity shows stronger temperature dependence than the Mn dichroic signal. Besides a reduced ferromagnetic exchange coupling in the interfacial LSMO layer, this may also be attributed to a weak Ti-Mn exchange coupling that is insufficient to overcome the thermal energy at elevated temperatures.

Caracterização elétrica de túnel-FET em estrutura de nanofio com fontes de SiGe e Ge em função da temperatura.

Este trabalho teve como objetivo estudar os transistores de tunelamento por efeito de campo em estruturas de nanofio (NW-TFET), sendo realizado através de analises com base em explicações teóricas, simulações numéricas e medidas experimentais. A fim de avaliar melhorar o desempenho do NW-TFET, este trabalho utilizou dispositivos com diferentes materiais de fonte, sendo eles: Si, liga SiGe e Ge, além da variação da espessura de HfO2 no material do dielétrico de porta. Com o auxílio de simulações numéricas foram obtidos os diagramas de bandas de energia dos dispositivos NW-TFET com fonte de Si0,73Ge0,27 e foi analisada a influência de cada um dos mecanismos de transporte de portadores para diversas condições de polarização, sendo observado a predominância da influência da recombinação e geração Shockley-Read-Hall (SRH) na corrente de desligamento, do tunelamento induzido por armadilhas (TAT) para baixos valores de tensões de porta (0,5V > VGS > 1,5V) e do tunelamento direto de banda para banda (BTBT) para maiores valores tensões de porta (VGS > 1,5V). A predominância de cada um desses mecanismos de transporte foi posteriormente comprovada com a utilização do método de Arrhenius, sendo este método adotado em todas as análises do trabalho. O comportamento relativamente constante da corrente dos NW-TFETs com a temperatura na região de BTBT tem chamado a atenção e por isso foi realizado o estudo dos parâmetros analógicos em função da temperatura. Este estudo foi realizado comparando a influência dos diferentes materiais de fonte. O uso de Ge na fonte, permitiu a melhora na corrente de tunelamento, devido à sua menor banda proibida, aumentando a corrente de funcionamento (ION) e a transcondutância do dispositivo. Porém, devido à forte dependência de BTBT com o campo elétrico, o uso de Ge na fonte resulta em uma maior degradação da condutância de saída. Entretanto, a redução da espessura de HfO2 no dielétrico de porta resultou no melhor acoplamento eletrostático, também aumentando a corrente de tunelamento, fazendo com que o dispositivo com fonte Ge e menor HfO2 apresentasse melhores resultados analógicos quando comparado ao puramente de Si. O uso de diferentes materiais durante o processo de fabricação induz ao aumento de defeitos nas interfaces do dispositivo. Ao longo deste trabalho foi realizado o estudo da influência da densidade de armadilhas de interface na corrente do dispositivo, demonstrando uma relação direta com o TAT e a formação de uma região de platô nas curvas de IDS x VGS, além de uma forte dependência com a temperatura, aumentando a degradação da corrente para temperaturas mais altas. Além disso, o uso de Ge introduziu maior número de impurezas no óxido, e através do estudo de ruído foi observado que o aumento na densidade de armadilhas no óxido resultou no aumento do ruído flicker em baixa frequência, que para o TFET, ocorre devido ao armadilhamento e desarmadilhamento de elétrons na região do óxido. E mais uma vez, o melhor acoplamento eletrostático devido a redução da espessura de HfO2, resultou na redução desse ruído tornando-se melhor quando comparado à um TFET puramente de Si. Neste trabalho foi proposto um modelo de ruído em baixa frequência para o NW-TFET baseado no modelo para MOSFET. Foram realizadas apenas algumas modificações, e assim, obtendo uma boa concordância com os resultados experimentais na região onde o BTBT é o mecanismo de condução predominante.

Fermi-edge singularities in linear and nonlinear ultrafast spectroscopy

We discuss Fermi-edge singularity effects on the linear and nonlinear transient response of an electron gas in a doped semiconductor. We use a bosonization scheme to describe the low-energy excitations, which allows us to compute the time and temperature dependence of the response functions. Coherent control of the energy absorption at resonance is analyzed in the linear regime. It is shown that a phase shift appears in the coherent control oscillations, which is not present in the excitonic case. The nonlinear response is calculated analytically and used to predict that four wave-mixing experiments would present a Fermi-edge singularity when the exciting energy is varied. A new dephasing mechanism is predicted in doped samples that depends linearly on temperature and is produced by the low-energy bosonic excitations in the conduction band.

Geochemistry and sedimentation rates of ODP Leg 199 sites and of surface sediments in the eastern Pacific ocean

We present the first high-resolution organic carbon mass accumulation rate (MAR) data set for the Eocene equatorial Pacific upwelling region, from Sites 1218 and 1219 of the Ocean Drilling Program. A maximum Corg MAR anomaly appears at 41 Ma and corresponds to a high carbonate accumulation event (CAE). Independent evidence suggests that this event (CAE-3) was a time of rapid cooling. Throughout the Eocene, organic carbon burial fluxes were an order of magnitude lower than fluxes recorded for the Holocene. In contrast, the expected organic carbon flux, calculated from the biogenic barium concentrations for these sites, is roughly equal to modern. A sedimentation anomaly appears at 41 Ma, when both the measured and the expected organic carbon MAR increases by a factor of two-three relative to the background Eocene fluxes. The rain of estimated Corg and barium from the euphotic zone to the sediments increased by factors of three and six, respectively. We suggest that the discrepancy between the expected and measured Corg in the sediments is a direct consequence of the increased metabolic rates of all organisms throughout the Eocene oceans and sediments. This hypothesis is supported by recent work in ecology and biochemical kinetics that recognizes the fundamental basis of ecology as following from the laws of thermodynamics. This dependence is now elucidated as the Universal Temperature Dependence (UTD) "law" of metabolism and can be applied to all organisms over their biologically relevant temperature range. The general pattern of organic carbon and barium deposition throughout the Eocene is consistent with the UTD theory. In particular, the anomaly at 41 Ma (CAE-3) is associated with rapid cooling, an event that triggered slower metabolic rates for all organisms, slower recycling of organic carbon in the water and sediment column, and, consequently, higher deposition of organic carbon in the sediments. This "metabolism-based" scenario is consistent with the sedimentation patterns we observe for both Sites 1218 and 1219.