989 resultados para Solano de Luque, Francisco


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Sign.: []1, [parágrafo]4, A-Z4, 2A-2Z4, 3A-3X4, *-3*2, 4*1

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Arsenic alloying is observed for epitaxial layers nominally intended to be In0.75Ga0.25N. Voids form beneath their interfaces with GaAs substrates, acting as sources of Ga + As out-diffusion into the growing epilayers. As a result, heteroepitaxial single-phase quaternary InxGa1-xAsyN1-y, films are formed with x similar to 0.55 and 0.05 menor que y menor que 0,10. While an undoped epilayer retains the wurtzite structure, a Mn-doped sample showed randomly spaced dopant segregations, which, together with a slightly higher As concentration, led to a transformation from the hexagonal to the twinned cubic phase.

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Digitalización Vitoria-Gasteiz Archivos y Bibliotecas Diciembre 1994 18-136

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En el primer tomo no aparece la fecha de publicación

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Litografía en color de A. Morales de los Ríos e impresa en Barcelona por Vda e Hijos de Labielle