994 resultados para Rothschild, Nathan Mayer vonRothschild, Nathan Mayer vonNathan MayerRothschildvon
Power Law Dependence of Field-Effect Mobility in Amorphous Oxide Semiconductor Thin Film Transistors
Resumo:
Current-voltage behaviour of oxide TFTs is modeled based on trap-limited conduction and percolation theories. The mobility has a power-law dependence, in which percolation controls the exponent while trap states determine constant term in the power law. The proposed model, which is fully physically-based, provides a good agreement with measured transistor characteristics as well as transient operations of fabricated pixel test circuits for oxide-based OLED displays. © 2013 Society for Information Display.
Resumo:
In the design of capacitive touch-screen panels, electrodes are patterned to improve touch sensitivity. In this paper, we analyze the relationship between electrode patterns and touch sensitivity. An approach is presented where simulations are used to measure the sensitivity of touch-screen panels based on capacitance changes for various electrode patterns. Touch sensitivity increases when the touch object is positioned in close proximity to fringing electric fields generated by the patterned electrodes. Three new electrode patterns are proposed to maximize field fringing in order to increase touch sensitivity by purely electrode patterning means. Simulations showed an increased touch sensitivity of up to 5.4%, as compared with the more conventional interlocking diamonds pattern. Here, we also report empirical findings for fabricated touch-screen panels. © 2005-2012 IEEE.
Resumo:
Two-phase computational fluid dynamics modelling is used to investigate the magnitude of different contributions to the wet steam losses in a three-stage model low pressure steam turbine. The thermodynamic losses (due to irreversible heat transfer across a finite temperature difference) and the kinematic relaxation losses (due to the frictional drag of the drops) are evaluated directly from the computational fluid dynamics simulation using a concept based on entropy production rates. The braking losses (due to the impact of large drops on the rotor) are investigated by a separate numerical prediction. The simulations show that in the present case, the dominant effect is the thermodynamic loss that accounts for over 90% of the wetness losses and that both the thermodynamic and the kinematic relaxation losses depend on the droplet diameter. The numerical results are brought into context with the well-known Baumann correlation, and a comparison with available measurement data in the literature is given. The ability of the numerical approach to predict the main wetness losses is confirmed, which permits the use of computational fluid dynamics for further studies on wetness loss correlations. © IMechE 2013 Reprints and permissions: sagepub.co.uk/journalsPermissions.nav.
Resumo:
Segregating the dynamics of gate bias induced threshold voltage shift, and in particular, charge trapping in thin film transistors (TFTs) based on time constants provides insight into the different mechanisms underlying TFTs instability. In this Letter we develop a representation of the time constants and model the magnitude of charge trapped in the form of an equivalent density of created trap states. This representation is extracted from the Fourier spectrum of the dynamics of charge trapping. Using amorphous In-Ga-Zn-O TFTs as an example, the charge trapping was modeled within an energy range of ΔEt 0.3 eV and with a density of state distribution as Dt(Et-j)=Dt0exp(-ΔEt/ kT)with Dt0 = 5.02 × 1011 cm-2 eV-1. Such a model is useful for developing simulation tools for circuit design. © 2014 AIP Publishing LLC.