The potential of natural, photosynthetic pigments to improve the efficiency of dye-sensitized solar cells

Gemstone Team Grenergy

Manufacturing of uniformly-sized silicon particles for solar cell from molten metal jet by electromagnetic pinch force

Spherical silicon solar cells are expected to serve as a technology to reduce silicon usage of photovoltaic (PV) power systems[1, 2, 3]. In order to establish the spherical silicon solar cell, a manufacturing method of uniformly sized silicon particles of 1mm in diameter is required. However, it is difficult to mass-produce the mono-sized silicon particles at low cost by existent processes now. We proposed a new method to generate liquid metal droplets uniformly by applying electromagnetic pinch force to a liquid metal jet[4]. The electromagnetic force was intermittently applied to the liquid metal jet issued from a nozzle in order to fluctuate the surface of the jet. As the fluctuation grew, the liquid jet was broken up into small droplets according to a frequency of the intermittent electromagnetic force. Firstly, a preliminary experiment was carried out. A single pulse current was applied instantaneously to a single turn coil around a molten gallium jet. It was confirmed that the jet could be split up by pinch force generated by the current. And then, electromagnetic pinch force was applied intermittently to the jet. It was found that the jet was broken up into mono-sized droplets in the case of a force frequency was equal to a critical frequency[5], which corresponds to a natural disturbance wave length of the jet. Numerical simulations of the droplet generation from the liquid jet were then carried out, which consisted of an electromagnetic analysis and a fluid flow calculation with a free surface of the jet. The simulation results were compared with the experiments and the agreement between the two was quite good.

Nanostructured thin-film WO3 photoanodes for solar water and sea-water splitting

This article charts the development of the use of thin films of nanoparticulate WO3 and how they have been used to overcome problems associated with other photocatalytic materials and bulk WO3. Current technology is described and the authors' views on the outlook for future development is suggested.

Metal oxide photoanodes for solar hydrogen production

The development of sustainable hydrogen production is a key target in the further facilitation of a hydrogen economy. Solar hydrogen generation through the photolytic splitting of water sensitised by semiconductor materials is attractive as it is both renewable and does not lead to problematic by-products, unlike current hydrogen sources such as natural gas. Consequently, the development of these semiconductor materials has undergone considerable research since their discovery over 30 years ago and it would seem prescient to review the more practical results of this research. Among the critical factors influencing the choice of semiconductor material for photoelectrolysis of water are the band-gap energies, flat band potentials and stability towards photocorrosion; the latter of these points directs us to focus on metal oxides. Careful design of thin films of photocatalyst material can eliminate potential routes of losses in performance, i.e., recombination at grain boundaries. Methods to overcome these problems are discussed such as coupling a photoanode for photolysis of water to a photovoltaic cell in a 'tandem cell' device.

Optical Characterization of Indium Gallium Nitride for Application in High-Efficiency Solar Photovoltaic Cells

The semiconductor alloy indium gallium nitride (InxGa1-xN) offers substantial potential in the development of high-efficiency multi-junction photovoltaic devices due to its wide range of direct band gaps, strong absorption and other optoelectronic properties. This work uses a variety of characterization techniques to examine the properties of InxGa1-xN thin films deposited in a range of compositions by a novel plasma-enhanced evaporation deposition system. Due to the high vapour pressure and low dissociation temperature of indium, the indium incorporation and, ultimately, control of the InxGa1-xN composition was found to be influenced to a greater degree by deposition temperature than variations in the In:Ga source rates in the investigated region of deposition condition space. Under specific deposition conditions, crystalline films were grown in an advantageous nano-columnar microstructure with deposition temperature influencing column size and density. The InxGa1-xN films were determined to have very strong absorption coefficients with band gaps indirectly related to indium content. However, the films also suffer from compositional inhomogeneity and In-related defect complexes with strong phonon coupling that dominates the emission mechanism. This, in addition to the presence of metal impurities, harms the alloy’s electronic properties as no significant photoresponse was observed. This research has demonstrated the material properties that make the InxGa1-xN alloy attractive for multi-junction solar cells and the benefits/drawbacks of the plasma-enhanced evaporation deposition system. Future work is needed to overcome significant challenges relating to crystalline quality, compositional homogeneity and the optoelectronic properties of In-rich InxGa1-xN films in order to develop high-performance photovoltaic devices.