The role of the catalytic particle in the growth of carbon nanotubes by plasma enhanced chemical vapor deposition

Vertically aligned carbon nanotubes were synthesized by plasma enhanced chemical vapor deposition using nickel as a metal catalyst. High resolution transmission electron microscopy analysis of the particle found at the tip of the tubes reveals the presence of a metastable carbide Ni3C. Since the carbide is found to decompose upon annealing at 600 degreesC, we suggest that Ni3C is formed after the growth is stopped due to the rapid cooling of the Ni-C interstitial solid solution. A detailed description of the tip growth mechanism is given, that accounts for the composite structure of the tube walls. The shape and size of the catalytic particle determine the concentration gradient that drives the diffusion of C atoms across and though the metal. (C) 2004 American Institute of Physics.

Carbon transition efficiency and process cost in high-rate, large-area deposition of diamond films by DC arc plasma jet

A new DC plasma torch in which are jet states and deposition parameters can be regulated over a wide range has been built. It showed advantages in producing stable plasma conditions at a small gas flow rate. Plasma jets with and without magnetically rotated arcs could be generated. With straight are jet deposition, diamond films could be formed at a rate of 39 mu m/h on Mo substrates of Phi 25 mm, and the conversion rate of carbon in CH4 to diamond was less than 3%. Under magnetically rotated conditions, diamond films could be deposited uniformly in a range of Phi 40 mm at 30 mu m/h, with a quite low total gas flow rate and high carbon conversion rate of over 11%. Mechanisms of rapid and uniform deposition of diamond films with low gas consumption and high carbon transition efficiency are discussed.

Effects of Natural Convection on the Characteristics of a Long Laminar Argon Plasma Jet Issuing Horizontally into Ambient Air

Three-dimensional modeling results show that the appearance of the long laminar plasma jet is less influenced by natural convection even as it is issuing into ambient air horizontally. However, plasma parameter distributions may deviate from axi-symmetry

Experimental Study on the Thermal Argon Plasma Generation and Jet Length Change Characteristics at Atmospheric Pressure

The generation, jet length and flow-regime change characteristics of argon plasma issuing into ambient air have been experimentally examined. Different torch structures have been used in the tests. Laminar plasma jets can be generated within a rather wide range of working-gas flow rates, and an unsteady transitional flow state exists between the laminar and turbulent flow regimes. The high-temperature region length of the laminar plasma jet can be over an order longer than that of the turbulent plasma jet and increases with increasing argon flow rate or arc current, while the jet length of the turbulent plasma is less influenced by the generating parameters. The flow field of the plasma jet has very high radial gradients of plasma parameters, and a Reynolds number alone calculated in the ordinary manner may not adequately serve as a criterion for transition. The laminar plasma jet can have a higher velocity than that of an unsteady or turbulent jet. The long laminar plasma jet has good stiffness to withstand the impact of laterally injected cold gas and particulate matter. It could be used as a rather ideal object for fundamental studies and be applied to novel materials processing due to its attractive stable and adjustable properties.

Modeling Study on the Entrainment of Ambient Air into Subsonic Laminar and Turbulent Argon Plasma Jets

Modeling study is performed to reveal the special features of the entrainment of ambient air into subsonic laminar and turbulent argon plasma jets. Two different types of jet flows are considered, i.e., the argon plasma jet is impinging normally upon a flat substrate located in atmospheric air surroundings or is freely issuing into the ambient air. It is found that the existence of the substrate not only changes the plasma temperature, velocity and species concentration distributions in the near-substrate region, but also significantly enhances the mass flow rate of the ambient air entrained into the jet due to the additional contribution to the gas entrainment of the wall jet formed along the substrate surface. The fraction of the additional entrainment of the wall jet in the total entrained-air flow rate is especially high for the laminar impinging plasma jet and for the case with shorter substrate standoff distances. Similarly to the case of cold-gas free jets, the maximum mass flow-rate of ambient gas entrained into the turbulent impinging or free plasma jet is approximately directly proportional to the mass flow rate at the jet inlet. The maximum mass flow-rate of ambient gas entrained into the laminar impinging plasma jet slightly increases with increasing jet-inlet velocity but decreases with increasing jet-inlet temperature.

Preliminary Investigations on Low-Pressure Laminar Plasma Spray Processing

The usual plasma spraying methods often involve entrainment of the surrounding air into the turbulent plasma core and result in coated materials having relatively high porosity and low adhesive strength. Therefore, exploration of new plasma spraying methods for fabricating high quality coatings to meet the requirement of special applications will be quite important. In this study, an alternative plasma spraying method, i.e. the low-pressure laminar plasma spraying process, is investigated and used in an attempt for spraying thermal barrier coatings (TBCs). Investigations on the characteristics of the laminar plasma jets, feeding methods for the ceramic powder and the formation process of the individual quenched splats have been carried out. The properties of the TBCs sprayed by laminar plasma jet process, such as the adhesive strength at the interface of the ceramic coating/bond coat, the surface roughness and microstructure, are examined by tensile tests and scanning electron microscope (SEM) observations.

Experimental Study on Fluctuation Characteristics of Laminar/Turbulent Plasma Jets

应用电压传感器、光电倍增管及水冷皮托管，对产生射入空气中的纯氩层流和湍流等离子体射流的弧电压波动、发生器出口处的射流光强波动以及沿射流轴线的滞止压力波动进行了测量。结果显示层流等离子体射流各参数的波动幅度远小于湍流射流的对应值；弧电压的波动幅度随气流量的变化明显，但随电流的变化很小；弧电压的波动幅度与其平均值之比随电流增加呈下降的趋势。

Laminar Plasma Spraying of Metal Wire in Atmosphere

利用层流等离子体射流，以普通工程铁丝为喷涂材料，在Q235基体表面制备金属涂层，并利用喷涂系统的参数可调性研究工艺参数对涂层质量的影响。结果表明，利用层流等离子体射流喷涂可以得到具有典型层状结构、氧化较少的致密涂层。

Propagation Properties of Electromagnetic Wave in a Plasma Slab

In this paper, the calculated results about the propagation properties of electromagnetic wave in a plasma slab are described. The relationship of the propagation properties with frequencies of electromagnetic wave, and parameters of plasma (electron temperature, electron density, dimensionless collision frequency and the size of the plasma slab) is analyzed.

Amorphous Coatings Deposited on Aluminum Alloy by Plasma Electrolytic Oxidation

Amorphous [Al-Si-O] coatings were deposited on aluminum alloy by plasma electrolytic oxidation (PEO). The process parameters, composition, micrograph, and mechanical property of PEO amorphous coatings were investigated. It is found that the growth rate of PEO coatings reaches 4.44 mu m/min if the current density is 0.9 mA/mm(2). XRD results show that the PEO coatings are amorphous in the current density range of 0.3-0.9 mA/mm(2). EDS results show that the coatings are composed of O, Si and At elements. SEM results show that the coatings are porous. Nano indentation results show that the hardness of the coatings is about 3 - 4 times of that of the substrate, while the elastic modulus is about the same with the substrate. Furthermore, a formation mechanism of amorphous PEO coatings was proposed.

A comparative study of plasma-enhanced chemical vapor gate dielectrics for solution-processed polymer thin-film transistor circuit integration

This paper considers plasma-enhanced chemical vapor deposited (PECVD) silicon nitride (SiNx) and silicon oxide (SiOx) as gate dielectrics for organic thin-film transistors (OTFTs), with solution-processed poly[5, 5′ -bis(3-dodecyl-2-thienyl)-2, 2′ -bithiophene] (PQT-12) as the active semiconductor layer. We examine transistors with SiNx films of varying composition deposited at 300 °C as well as 150 °C for plastic compatibility. The transistors show over 100% (two times) improvement in field-effect mobility as the silicon content in SiNx increases, with mobility (μFE) up to 0.14 cm2 /V s and on/off current ratio (ION / IOFF) of 108. With PECVD SiOx gate dielectric, preliminary devices exhibit a μFE of 0.4 cm2 /V s and ION / IOFF of 108. PQT-12 OTFTs with PECVD SiNx and SiOx gate dielectrics on flexible plastic substrates are also presented. These results demonstrate the viability of using PECVD SiN x and SiOx as gate dielectrics for OTFT circuit integration, where the low temperature and large area deposition capabilities of PECVD films are highly amenable to integration of OTFT circuits targeted for flexible and lightweight applications. © 2008 American Institute of Physics.

Doping mechanism in tetrahedral amorphous carbon

Doping in hydrogenated amorphous silicon occurs by a process of an ionised donor atom partially compensated by a charged dangling bond. The total energies of various dopant and dopant/bonding combinations are calculated for tetrahedral amorphous carbon. It is found that charged dangling bonds are less favoured because of the stronger Coulombic repulsion in ta-C. Instead the dopants can be compensated by weak bond states in the lower gap associated with odd-membered π-rings or odd-numbered π-chains. The effect is that the doping efficiency is low but there are not charged midgap recombination centres, to reduce photoconductivity or photoluminescence with doping, as occurs in a-Si:H.

Doping mechanism in tetrahedral amorphous carbon

Doping in hydrogenated amorphous silicon occurs by a process of an ionized donor atom partially compensated by a charged dangling bond. The total energies of various dopant and dopant/bonding combinations are calculated for tetrahedral amorphous carbon. It is found that charged dangling bonds are less favored because of the stronger Coulombic repulsion in ta-C. Instead the dopants can be compensated by weak bond states in the lower gap associated with odd-membered π-rings or odd-numbered π-chains. The effect is that the doping efficiency is low but there are not charged midgap recombination centres, to reduce photoconductivity or photoluminescence with doping, as occurs in a-Si:H.