A Insustentabilidade do transporte em automóveis

A mobilidade urbana é um problema em diversos centros urbanos e é agravada pelo número crescente de automóveis e seu uso indiscriminado. Este estudo exploratório-descritivo abordará revisões conceituais e levantamento extenso de dados sobre a função de transporte; o automóvel, quanto a sua origem e simbolismos; o contexto do Brasil e da cidade do Rio de Janeiro; a dependência dos veículos e os impactos do trânsito na sociedade, a fim de explicar a insustentabilidade desse meio de transporte, da forma como tem sido utilizado nas cidades. Dentre os principais impactos causados pela dependência do automóvel, destacam-se os relativos a saúde, com problemas que vão desde complicações no sistema respiratório e circulatório até o comprometimento da saúde mental; qualidade de vida e a relação entre tempo e custos de locomoção; segurança e todo aparato tecnológico de automóveis que protege o usuário em detrimento do público mais vulnerável, como pedestres e ciclistas; morfologia da cidade, que acaba por privilegiar um modal individual e cria novas formas urbanas que demandam mais espaços para automóveis; mudanças climáticas devido à poluição desproporcional, que influencia os padrões bioquímicos de vários ecossistemas, gerando mudanças climáticas; e prejuízos econômicos, estimados por três diferentes metodologias de estudo, que procuraram monetizar o custo dos congestionamentos. A pesquisa propõe diversas atitudes para reverter ou mitigar o uso excessivo do Transporte em Automóveis. Esta contribuição para os estudos da geografia de transportes vislumbra deixar subsídios para que se avance no debate sobre a dependência do automóvel, especialmente em grandes cidades

Adaptive modulation induced WDM impairment reduction in optical OFDM PONs

The transmission performance of multi-channel adaptively modulated optical OFDM (AMOOFDM) signals is numerically investigated, for the first time, in optical amplification- and chromatic dispersion compensation-free, intensity-modulation and direct-detection systems incorporating directly modulated DFB lasers (DMLs). It is shown that adaptive modulation not only reduces significantly the nonlinear WDM impairments induced by the effects of cross-phase modulation and four-wave mixing, but also compensates effectively for the DML-induced frequency chirp effect. In comparison with identical modulation, adaptive modulation improves the maximum achievable signal transmission capacity of a central channel by a factor of 1.3 and 3.6 for 40km and 80km SMFs, respectively, with corresponding dynamic input optical power ranges being extended by approximately 5dB. In addition, adaptive modulation also enables cross-channel complementary modulation format mapping, leading to an improved transmission capacity of the entire WDM system. Copyright © 2010 The authors.

On representing chemical environments

We review some recently published methods to represent atomic neighbourhood environments, and analyse their relative merits in terms of their faithfulness and suitability for fitting potential energy surfaces. The crucial properties that such representations (sometimes called descriptors) must have are differentiability with respect to moving the atoms, and invariance to the basic symmetries of physics: rotation, reflection, translation, and permutation of atoms of the same species. We demonstrate that certain widely used descriptors that initially look quite different are specific cases of a general approach, in which a finite set of basis functions with increasing angular wave numbers are used to expand the atomic neighbourhood density function. Using the example system of small clusters, we quantitatively show that this expansion needs to be carried to higher and higher wave numbers as the number of neighbours increases in order to obtain a faithful representation, and that variants of the descriptors converge at very different rates. We also propose an altogether new approach, called Smooth Overlap of Atomic Positions (SOAP), that sidesteps these difficulties by directly defining the similarity between any two neighbourhood environments, and show that it is still closely connected to the invariant descriptors. We test the performance of the various representations by fitting models to the potential energy surface of small silicon clusters and the bulk crystal.

Probability-Matching Predictors for Extreme Extremes

A location- and scale-invariant predictor is constructed which exhibits good probability matching for extreme predictions outside the span of data drawn from a variety of (stationary) general distributions. It is constructed via the three-parameter {\mu, \sigma, \xi} Generalized Pareto Distribution (GPD). The predictor is designed to provide matching probability exactly for the GPD in both the extreme heavy-tailed limit and the extreme bounded-tail limit, whilst giving a good approximation to probability matching at all intermediate values of the tail parameter \xi. The predictor is valid even for small sample sizes N, even as small as N = 3. The main purpose of this paper is to present the somewhat lengthy derivations which draw heavily on the theory of hypergeometric functions, particularly the Lauricella functions. Whilst the construction is inspired by the Bayesian approach to the prediction problem, it considers the case of vague prior information about both parameters and model, and all derivations are undertaken using sampling theory.

Single-photon emission at liquid nitrogen temperature from a single InAs/GaAs quantum dot

We report on the single photon emission from single InAs/GaAs self-assembled Stranski-Krastanow quantum dots up to 80K under pulsed and continuous wave excitations. At temperature 80 K, the second-order correlation function at zero time delay, g((2))(0), is measured to be 0.422 for pulsed excitation. At the same temperature under continuous wave excitation, the photon antibunching effect is observed. Thus, our experimental results demonstrate a promising potential application of self-assembled InAs/GaAs quantum dots in single photon emission at liquid nitrogen temperature.

Passively mode-locked YVO4/Nd : YVO4 composite crystal laser with a semiconductor saturable absorber as a high reflector

A passively mode-locked diode end-pumped YVO4/Nd:YVO4 composite crystal laser with a five-mirror folded cavity was first demonstrated in this paper by using a low temperature semiconductor saturable absorber mirror grown by metal organic chemical vapor deposition. Both the Q-switching and continuous-wave mode locking operation were realized experimentally. A stable averaged output power of 10.15 W with pulse width of about 11.2-ps at a repetition rate of 113 MHz was obtained, and the optical-to-optical efficiency of 43% was achieved.

Diode-pumped passively mode-locked YVO4/Nd : YVO4 composite crystal laser with LT-In0.25Ga0.75As saturable absorber

A passively mode-locked all-solid-state YVO4/Nd:YVO4 composite crystal laser was realized with a low temperature (LT) In0.25Ga0.75As semiconductor saturable absorber mirror. The saturable absorber was used as nonlinear absorber and output coupler simultaneously. Both the Q-switch and continous-wave mode locking operation were experimentally realized. At a pump power of 4 W, the Q-switched mode locking changed to continuous wave mode locking. An average output power of 4.1 W with 5 ps pulse width was achieved at the pump power of 12 W, corresponding to an optical-optical conversion efficiency of 34.2%.

Microwave generation in an electro-absorption modulator integrated with a DFB laser subject to optical injection

This paper presents a new technique to generate microwave signal using an electro-absorption modulator (EAM) integrated with a distributed feedback (DFB) laser subject to optical injection. Experiments show that the frequency of the generated microwave can be tuned by changing the wavelength of the external laser or adjusting the bias voltage of the EAM. The frequency response of the EAM is studied and found to be unsmooth due to packaging parasitic effects and four-wave mixing effect occurring in the active layer of the DFB laser. It is also demonstrated that an EA modulator integrated in between two DFB lasers can be used instead of the EML under optical injection. This integrated chip can be used to realize a monolithically integrated tunable microwave source. (C) 2009 Optical Society of America

Intersubband optical absorption in quantum dots-in-a-well heterostructures

The theoretical analysis of intersubband optical transitions for InAs/ InGaAs quantum dots-in-a-well ( DWELL ) detectors are performed in the framework of effective-mass envelope- function theory. In contrast to InAs/ GaAs quantum dot (QD) structures, the calculated band structure of DWELL quantitatively confirms that an additional InGaAs quantum well effectively lowers the ground state of InAs QDs relative to the conduction-band edge of GaAs and enhances the confinement of electrons. By changing the doping level, the dominant optical transition can occur either between the bound states in the dots or from the ground state in the dots to bound states in the well, which corresponds to the far-infrared and long-wave infrared (LWIR ) peaks in the absorption spectra, respectively. Our calculated results also show that it is convenient to tailor the operating wavelength in the LWIR atmospheric window ( 8 - 12 mu m ) by adjusting the thickness of the InGaAs layer while keeping the size of the quantum dots fixed. Theoretical predictions agree well with the available experimental data. (c) 2005 American Institute of Physics.

Theoretical analysis of gate voltage-controlled subband states in an AlxGa1-xN/GaN heterostructure

The subband structure and inter-subband transition as a function of gate voltage are determined by solving the Schrodinger and Poisson equations self-consistently in an AlxGa1-xN/GaN heterostructure. Different aluminum mole fraction and thickness of AlxGa1-xN barrier are considered. Calculation results show that energy difference between the first and second subband covers a wide range (from several tens to hundreds milli-electron volt) by applying different gate voltage, which corresponds to the midinfrared and long-wave infrared wavelength scope. Furthermore, such a modulation on the subband transition energy is much more pronounced for the structure with thin barrier. When the applied positive gate voltage is increased, the triangle well formed at the interface turns to be deeper and narrower, which enhances the confinement for electrons. As a result, the overlap between electron wave function at two subbands increases, and thus the optical intersubband transition also enhances its intensity. This tendency is in good agreement with the available data in the literature. (c) 2005 Elsevier B.V. All rights reserved.

Quantum waveguide theory for hole transport in mesoscopic structures

A quantum waveguide theory is proposed for hole transport in the mesoscopic structures, including the band mixing effect. We found that due to the interference between the 'light' hole and 'heavy' wave, the transmission and reflection coefficients oscillate more irregularly as a function of incident wave vector geometry parameters. Furthermore conversion between the heavy hole and light hole states occurs at the intersection. (C) 2003 Elsevier Ltd. All rights reserved.