The software for oceanographic data management: VODC for PC 2.0

To manage and process a large amount of oceanographic data, users must have powerful tools that simplify these tasks. The VODC for PC is software designed to assist in managing oceanographic data. It based on 32 bits Windows operation system and used Microsoft Access database management system. With VODC for PC users can update data simply, convert to some international data formats, combine some VODC databases to one, calculate average, min, max fields for some types of data, check for valid data…

3 0 例正常产妇初乳与成熟乳碘含量的分析

　报道了30 例正常产妇的初乳和成熟乳的碘含量分别为135165±58128×10- 2 Lmo löL 和54188

External-cavity mode-locked quantum-dot laser diodes for low repetition rate, sub-picosecond pulse generation

This paper presents an investigation of the mode-locking performance of a two-section external-cavity mode-locked InGaAs quantum-dot laser diode, focusing on repetition rate, pulse duration and pulse energy. The lowest repetition rate to-date of any passively mode-locked semiconductor laser diode is demonstrated (310 MHz) and a restriction on the pulse energy (at 0.4 pJ) for the shortest pulse durations is identified. Fundamental mode-locking from 310 MHz to 1.1 GHz was investigated, and harmonic mode-locking was achieved up to a repetition rate of 4.4 GHz. Fourier transform limited subpicosecond pulse generation was realized through implementation of an intra-cavity glass etalon, and pulse durations from 930fs to 8.3ps were demonstrated for a repetition rate of 1 GHz. For all investigations, mode-locking with the shortest pulse durations yielded constant pulse energies of ∼0.4 pJ, revealing an independence of the pulse energy on all the mode-locking parameters investigated (cavity configuration, driving conditions, pulse duration, repetition rate, and output power). © 2011 IEEE.

Thickness control of Molecular Beam Epitaxy grown layers at the 0.01-0.1 monolayer level

Electron tunnelling through semiconductor tunnel barriers is exponentially sensitive to the thickness of the barrier layer, and in the most common system, the AlAs tunnel barrier in GaAs, a one monolayer variation in thickness results in a 300% variation in the tunnelling current for a fixed bias voltage. We use this degree of sensitivity to demonstrate that the level of control at 0.06 monolayer can be achieved in the growth by molecular beam epitaxy, and the geometrical variation of layer thickness across a wafer at the 0.01 monolayer level can be detected.

Optimum Magnetic Circuit Configurations for Permanent Magnet Aerospace Generators

In the design of high-speed low-power electrical generators for unmanned aircraft and spacecraft, maximization of specific output (power/weight) is of prime importance. Several magnetic circuit configurations (radial-field, axial-field, flux-squeezing, homopolar) have been proposed, and in this paper the relative merits of these configurations are subjected to a quantitative investigation over the speed range 10 000–100000 rev/min and power range 250 W-10 kW. The advantages of incorporating new high energy-density magnetic materials are described. Part I deals with establishing an equivalent circuit for permanent-magnet generators. For each configuration the equivalent circuit parameters are related to the physical dimensions of the generator components and an optimization procedure produces a minimum volume design at discrete output powers and operating speeds. The technique is illustrated by a quantitative comparison of the specific outputs of conventional radial-field generators with samarium cobalt and alnico magnets. In Part II the specific outputs of conventional, flux-squeezing, and claw-rotor magnetic circuit configurations are compared. The flux-squeezing configuration is shown to produce the highest specific output for small sizes whereas the conventional configuration is best at large sizes. For all sizes the claw-rotor configuration is significantly inferior. In Part III the power densities available from axial-field and flux-switching magnetic circuit configurations are maximized, over the power range 0.25-10 kW and speed range 10 000–100000 rpm, and compared to the results of Parts I & II. For the axial-field configuration the power density is always less than that of the conventional and flux-squeezing radial-field configurations. For the flux-switching generator, which is able to withstand relatively high mechanical forces in the rotor, the power density is again inferior to the radial-field types, but the difference is less apparent for small (low power, high speed) generator sizes. From the combined results it can be concluded that the flux-squeezing and conventional radial-field magnetic circuit configurations yield designs with minimum volume over the power and speed ranges considered. © 1985, IEEE. All rights reserved.

SoC energy savings = reduce+reuse+recycle: A case study using a 660MHz DC-DC converter with integrated output filter

This paper advocates 'reduce, reuse, recycle' as a complete energy savings strategy. While reduction has been common to date, there is growing need to emphasize reuse and recycling as well. We design a DC-DC buck converter to demonstrate the 3 techniques: reduce with low-swing and zero voltage switching (ZVS), reuse with supply stacking, and recycle with regulated delivery of excess energy to the output load. The efficiency gained from these 3 techniques helps offset the loss of operating drivers at very high switching frequencies which are needed to move the output filter completely on-chip. A prototype was fabricated in 0.18μm CMOS, operates at 660MHz, and converts 2.2V to 0.75-1.0V at ∼50mA.1 © 2008 IEEE.

Analysis of defect-related localized emission processes in InGaN/GaN-based LEDs

This paper reports an extensive analysis of the defect-related localized emission processes occurring in InGaN/GaN-based light-emitting diodes (LEDs) at low reverse- and forward-bias conditions. The analysis is based on combined electrical characterization and spectrally and spatially resolved electroluminescence (EL) measurements. Results of this analysis show that: (i) under reverse bias, LEDs can emit a weak luminescence signal, which is directly proportional to the injected reverse current. Reverse-bias emission is localized in submicrometer-size spots; the intensity of the signal is strongly correlated to the threading dislocation (TD) density, since TDs are preferential paths for leakage current conduction. (ii) Under low forward-bias conditions, the intensity of the EL signal is not uniform over the device area. Spectrally resolved EL analysis of green LEDs identifies the presence of localized spots emitting at 600 nm (i.e., in the yellow spectral region), whose origin is ascribed to localized tunneling occurring between the quantum wells and the barrier layers of the diodes, with subsequent defect-assisted radiative recombination. The role of defects in determining yellow luminescence is confirmed by the high activation energy of the thermal quenching of yellow emission (Ea =0.64&eV). © 2012 IEEE.

Optimization of thermal material in a flux pump system with high temperature superconductor

Superconductors are known for the ability to trap magnetic field. A thermally actuated magnetization (TAM) flux pump is a system that utilizes the thermal material to generate multiple small magnetic pulses resulting in a high magnetization accumulated in the superconductor. Ferrites are a good thermal material candidate for the future TAM flux pumps because the relative permeability of ferrite changes significantly with temperature, particularly around the Curie temperature. Several soft ferrites have been specially synthesized to reduce the cost and improve the efficiency of the TAM flux pump. Various ferrite compositions have been tested under a temperature variation ranging from 77K to 300K. The experimental results of the synthesized soft ferrites-Cu 0.3 Zn 0.7Ti 0.04Fe 1.96O 4, including the Curie temperature, magnetic relative permeability and the volume magnetization (emu/cm3), are presented in this paper. The results are compared with original thermal material, gadolinium, used in the TAM flux pump system.-Cu 0.3 Zn 0.7Ti 0.04 Fe 1.96O 4 holds superior characteristics and is believed to be a suitable material for next generation TAM flux pump. © 2011 IEEE.

Low partial pressure chemical vapor deposition of graphene on copper

A systematic study of the Cu-catalyzed chemical vapor deposition of graphene under extremely low partial pressure is carried out. A carbon precursor supply of just P CH4∼ 0.009 mbar during the deposition favors the formation of large-area uniform monolayer graphene verified by Raman spectra. A diluted HNO 3 solution is used to remove Cu before transferring graphene onto SiO 2/Si substrates or carbon grids. The graphene can be made suspended over a ∼12 μm distance, indicating its good mechanical properties. Electron transport measurements show the graphene sheet resistance of ∼0.6 kΩ/□ at zero gate voltage. The mobilities of electrons and holes are ∼1800 cm 2/Vs at 4.2 K and ∼1200 cm 2/Vs at room temperature. © 2011 IEEE.

A fast 600-V Tandem PiN Schottky (TPS) rectifier with ultra-low on-state voltage

The Tandem PiN Schottky (TPS) rectifier features lowly-doped p-layers in both active and termination regions, and is applied in 600-V rating for the first time. In the active region, the Schottky contact is in series connection with a transparent p-layer, leading to a superior forward performance than the conventional diodes. In addition, due to the benefit of moderate hole injection from the p-layer, the TPS offers a better trade-off between the on-state voltage and the switching speed. The active p-layer also helps to stabilise the Schottky contact, and hence the electrical data distributions are more concentrated. Regarding the floating p-layer in the termination region, its purpose is to reduce the peak electric fields, and the TPS demonstrates a high breakdown voltage with a compact termination width, less than 70% of the state-of-the-art devices on the market. Experimental results have shown that the 600-V TPS rectifier has an ultra-low on-state voltage of 0.98 V at 250 A/cm 2, a fast turn-off time of 75 ns by the standard RG1 test (I F=0.5A, I R=1A, and I RR=0.25A) and a breakdown voltage over 720 V. It is noteworthy that the p-layers in the active and termination regions can be formed at no extra cost for the use of self-alignment process. © 2012 IEEE.

200-V lateral superjunction LIGBT on partial SOI

This letter presents a novel lateral superjunction lateral insulated-gate bipolar transistor (LIGBT) in partial silicon-on-insulator (SOI) technology in 0.18-μm partial-SOI (PSOI) high-voltage (HV) process. For an n-type superjunction LIGBT, the p-layer in the superjunction drift region not only helps in achieving uniform electric field distribution but also contributes to the on-state current. The superjunction LIGBT successfully achieves a breakdown voltage (BV) of 210 V with an R dson of 765 mΩ ̇ mm 2. It exhibits half the value of specific on-state resistance R dson and three times higher saturation current (I dsat) for the same BV, compared to a comparable lateral superjunction laterally diffused metal-oxide-semiconductor fabricated in the same technology. It also performs well in higher temperature dc operation with 38.8% increase in R dson at 175°C, compared to the room temperature without any degradation in latch-up performance. To realize this device, it only requires one additional mask layer into X-FAB 0.18-μm PSOI HV process. © 2012 IEEE.

Superjunction IGBT filling the gap between SJ MOSFET and ultrafast IGBT

In this letter, we report E off-versus-V ce tradeoff curves for vertical superjunction insulated-gate bipolar transistors (SJ IGBTs), exhibiting unusual inverse slopes dE off/dV ce > 0 in a transition region between purely unipolar and strongly bipolar device behaviors. This effect is due to the action of p-pillar hole current when depleting the drift layer of SJ IGBTs during turnoff and the impact of current gain on the transconductance. Such SJ IGBTs surpass by a very significant margin their superjunction MOSFET counterparts in terms of power-handling capability and on-state and turnoff losses, all at the same time. © 2012 IEEE.