Laser drilling improving circuit board manufacturing

We reported here a novel technique for laser high speed drillings on Printed Circuit Boards (PCBs). A CNC solid laser based system is developed to drill through and blind vias as an alternative to mechanical drilling. The system employs an Acousto-Optic Q-switched Nd: YAG laser, a computer control system and an X-Y moving table which can handle up to 400 x 400 mm PCB. With a special designed cavity the laser system works in a pulsed operation in order to generate pulses with width down to 0.5 mu s and maximum peak power over 10kW at 10k repetition rate. Delivered by an improved optical beam transforming system, the focused laser beam can drill hobs including blind vias on PCBs with diameter in the range of 0.1 - 0.4 mm and at up to 300 - 500 vias per second (depending on the construction of PCBs). By means of a CNC X-Y moving system, laser pulses with pulse-to-pulse superior repeatability can be fired at desired location on a PCBs with high accuracy. This alternative technology for drilling through or blind vias on PCBs or PWBs (printed wiring boards) will obviously enhance the capability to printed boards manufacturing.

Carbon transition efficiency and process cost in high-rate, large-area deposition of diamond films by DC arc plasma jet

A new DC plasma torch in which are jet states and deposition parameters can be regulated over a wide range has been built. It showed advantages in producing stable plasma conditions at a small gas flow rate. Plasma jets with and without magnetically rotated arcs could be generated. With straight are jet deposition, diamond films could be formed at a rate of 39 mu m/h on Mo substrates of Phi 25 mm, and the conversion rate of carbon in CH4 to diamond was less than 3%. Under magnetically rotated conditions, diamond films could be deposited uniformly in a range of Phi 40 mm at 30 mu m/h, with a quite low total gas flow rate and high carbon conversion rate of over 11%. Mechanisms of rapid and uniform deposition of diamond films with low gas consumption and high carbon transition efficiency are discussed.

Energy efficiency with natural ventilation: a case study

Application of laboratory analogue modelling of air flow in a naturally ventilated shopping mall is reviewed in this paper. A detailed study of the ventilation was undertaken to establish the principles and to explore how natural ventilation might interact with a localised mechanical ventilation system designed to enhance the cooling of a high density food court area. The case study is used to show how the combination of laboratory modelling and simplified mathematical modelling enables one to rapidly identify the various flow regimes which can occur, to quantify the resultant flows and mean temperatures and to thereby develop appropriate ventilation strategies for the different external conditions which occur through the year.

Efficiency measurement of GaN-based quantum well and light-emitting diode structures grown on silicon substrates

The optical efficiency of GaN-based multiple quantum well (MQW) and light emitting diode (LED) structures grown on Si(111) substrates by metal-organic vapor phase epitaxy was measured and compared with equivalent structures on sapphire. The crystalline quality of the LED structures was comprehensively characterized using x-ray diffraction, atomic force microscopy, and plan-view transmission electron microscopy. A room temperature photoluminescence (PL) internal quantum efficiency (IQE) as high as 58% has been achieved in an InGaN/GaN MQW on Si, emitting at 460 nm. This is the highest reported PL-IQE of a c-plane GaN-based MQW on Si, and the radiative efficiency of this sample compares well with similar structures grown on sapphire. Processed LED devices on Si also show good electroluminescence (EL) performance, including a forward bias voltage of ∼3.5 V at 20 mA and a light output power of 1 mW at 45 mA from a 500 ×500 μm2 planar device without the use of any additional techniques to enhance the output coupling. The extraction efficiency of the LED devices was calculated, and the EL-IQE was then estimated to have a maximum value of 33% at a current density of 4 A cm-2, dropping to 30% at a current density of 40 A cm-2 for a planar LED device on Si emitting at 455 nm. The EL-IQE was clearly observed to increase as the structural quality of the material increased for devices on both sapphire and Si substrates. © 2011 American Institute of Physics.

Enhanced efficiency of near-UV emitting LEDs for solid-state lighting applications

The performance of a series of near-UV (∼385 nm) emitting LEDs, consisting of high efficiency InGaN/AlInGaN QWs in the active region, was investigated. Significantly reduced roll-over of efficiency at high current density was found compared to InGaN/GaN LEDs emitting at a similar wavelength. The importance of optical cavity effects in flip-chip geometry devices has also been investigated. The light output was enhanced by more than a factor of 2 when the lightemitting region was located at an anti-node position with respect to a high reflectivity current injection mirror. A power of 0.49 mW into a numerical aperture of 0.5 was obtained for a junction area of 50μm in diameter and a current of 30 mA, corresponding to a radiance of 30 W/cm2/str.

Improving speech transcription for Mandarin-english translation

This paper describes the development of the CU-HTK Mandarin Speech-To-Text (STT) system and assesses its performance as part of a transcription-translation pipeline which converts broadcast Mandarin audio into English text. Recent improvements to the STT system are described and these give Character Error Rate (CER) gains of 14.3% absolute for a Broadcast Conversation (BC) task and 5.1% absolute for a Broadcast News (BN) task. The output of these STT systems is then post-processed, so that it consists of sentence-like segments, and translated into English text using a Statistical Machine Translation (SMT) system. The performance of the transcription-translation pipeline is evaluated using the Translation Edit Rate (TER) and BLEU metrics. It is shown that improving both the STT system and the post-STT segmentations can lower the TER scores by up to 5.3% absolute and increase the BLEU scores by up to 2.7% absolute. © 2007 IEEE.