Low temperature crystallographic data on Kevlar 49 fibres

Using X-ray diffraction data, the behaviour of Kevlar 49 fibres at low temperatures, up to -100degreesC, has been analysed. During cooling, the basal plane of the monoclinic unit cell shrinks whereas the c- (unique, chain axis) length is not significantly affected. In contrast, in the return heating cycle to ambient temperature, the basal plane expands and contraction occurs along the chain direction. The unit cell registers a reduction in volume in both the cooling and heating cycles. Conspicuously, after a cycle of cooling and heating, the unit cell does not return to its initial volume. (C) 2003 Kluwer Academic Publishers.

Low temperature synthesis, structure and properties of alkali-doped La2NiO4, LaNiO3 and LaNi0.85Cu0.15O3 from alkali hydroxide fluxes

We report a low-temperature synthesis of La1.95Na0.05NiO4 from NaOH flux, La0.97K0.03NiO3 and La0.95K0.05Ni0.85Cu0.15O3 phases from KOH flux at 400 degreesC. Alkali-doped LaNiO3 can be prepared in KOH, but not in NaOH flux and La2NiO4 can be prepared in NaOH, but not in KOH flux. The flux-grown oxides were characterized by powder X-ray Rietveld profile analysis and electron microscopy. Sodium doped La2NiO4 crystallizes in orthorhombic structure and potassium doped LaNiO3-phases crystallizes in rhombohedral structure. La1.95Na0.05NiO4 is weakly paramagnetic and semiconducting while La0.97K0.03NiO3 and La0.95K0.05Ni0.85Cu0.15O3 show Pauli paramagnetic and metallic behavior. (C) 2002 Editions scientifiques et medicales Elsevier SAS. All rights reserved.

Role of La0.5Sr0.5COO3 template layers on dielectric and electrical properties of pulsed-laser ablated Pb(Nb2/3Mg1/3)O-3-PbTiO3 thin films

Relaxor ferroelectric thin films of 0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) (PMN-PT) deposited on platinized silicon substrates with and without template layers were studied. Perovskite phase (80% by volume) was obtained through proper selection of the processing conditions on bare Pt/Ti/SiO2/Si substrates. The films were initially grown at 300 degreesC using pulsed-laser ablation and subsequently annealed in a rapid thermal annealing furnace in the temperature range of 750-850 degreesC to induce crystallization. Comparison of microstructure of the films annealed at different temperatures showed change in perovskite phase formation and grain size etc. Results from compositional analysis of the films revealed that the films initially possessed high content of lead percentage, which subsequently decreased after annealing at temperature 750-850 degreesC. Films with highest perovskite content were found to form at 820-840 degreesC on Pt substrates where the Pb content was near stoichiometric. Further improvement in the formation of perovskite PMN-PT phase was obtained by using buffer layers of La0.5Sr0.5CoO3 (LSCO) on the Pt substrate. This resulted 100% perovskite phase formation in the films deposited at 650 degreesC. Dielectric studies on the PMN-PT films with LSCO template layers showed high values of relative dielectric constant (3800) with a loss factor (tan delta) of 0.035 at a frequency of 1 kHz at room temperature. (C) 2002 Elsevier Science B.V. All rights reserved.

Study of temperature distribution along an artificially polluted insulator string

Insulator becomes wet partially or completely, and the pollution layer on it becomes conductive, when collecting pollutants for an extended period during dew, light rain, mist, fog or snow melting. Heavy rain is a complicated factor that it may wash away the pollution layer without initiating other stages of breakdown or it may bridge the gaps between sheds to promote flashover. The insulator with a conducting pollution layer being energized, can cause a surface leakage current to flow (also temperature-rise). As the surface conductivity is non-uniform, the conducting pollution layer becomes broken by dry bands (at spots of high current density), interrupting the flow of leakage current. Voltage across insulator gets concentrated across dry bands, and causes high electric stress and breakdown (dry band arcing). If the resistance of the insulator surface is sufficiently low, the dry band arcs can be propagated to bridge the terminals causing flashover. The present paper concerns the evaluation of the temperature distribution along the surface of an energized artificially polluted insulator string.

Temperature deformation behaviour of a Mg-0.8Al alloy

There is considerable interest currently in developing magnesium based alloys as replacements for aluminum alloys in automobile applications, due to their high specific strength as compared to aluminum alloys. However, the poor formability of magnesium alloys has restricted their applications; superplasticity can be utilized to form components with complex shapes. In the present study, the compressive deformation characteristics of a Mg-0.8 wt% Al alloy with an initial grain size of 19 +/- 1.0 mum have been studied in the temperature range of 623-673 K and at strain rates ranging from 10(-7) to 10(-3) s(-1). The stress exponent was observed to decrease with a decrease in stress. The results are analyzed in terms of the existing theoretical models for high temperature deformation. Furthermore, the potential for superplasticity in this alloy is explored, based on the mechanical and microstructural characteristics of the alloy.

Temperature effect on hydrocarbon-enhanced nitric oxide conversion using a dielectric barrier discharge reactor

Experimental investigations into the effect of temperature on conversion of NO in the presence of hydrocarbons (ethylene, acetylene and n-hexane) are presented. An AC energized dielectric barrier discharge reactor was used as the plasma reactor. The experiments were carried out at different temperatures up to 200 degreesC. The discharge powers were measured at all the temperatures. The discharge power was found to increase with temperature. NO conversion in the presence of ethylene and n-hexane was better than that of acetylene at all temperatures. The addition of acetylene at room temperature showed no better conversion of NO compared to no additive case. While at higher temperatures, it could enhance the conversion of NO. A slight enhancement in NO and NOx removal was observed in the presence of water vapor. (C) 2003 Elsevier Science B.V. All rights reserved.

Effect of annealing temperature on electrical and nano-structural properties of sol-gel derived ZnO thin films

Zinc oxide (ZnO) thin films have been prepared on silicon substrates by sol-gel spin coating technique with spinning speed of 3,000 rpm. The films were annealed at different temperatures from 200 to 500 A degrees C and found that ZnO films exhibit different nanostructures at different annealing temperatures. The X-ray diffraction (XRD) results showed that the ZnO films convert from amorphous to polycrystalline phase after annealing at 400 A degrees C. The metal oxide semiconductor (MOS) capacitors were fabricated using ZnO films deposited on pre-cleaned silicon (100) substrates and electrical properties such as current versus voltage (I-V) and capacitance versus voltage (C-V) characteristics were studied. The electrical resistivity decreased with increasing annealing temperature. The oxide capacitance was measured at different annealing temperatures and different signal frequencies. The dielectric constant and the loss factor (tan delta) were increased with increase of annealing temperature.

Low-temperature polaronic relaxations with variable range hopping conductivity in FeTiMO(6) (M = Ta,Nb,Sb)

Low-temperature dielectric measurements on FeTiMO(6) (M = Ta,Nb,Sb) rutile-type oxides at frequencies from 0.1 Hz to 10 MHz revealed anomalous dielectric relaxations with frequency dispersion. Unlike the high-temperature relaxor response of these materials, the low-temperature relaxations are polaronic in nature. The relationship between frequency and temperature of dielectric loss peak follows T(-1/4) behavior. The frequency dependence of ac conductivity shows the well-known universal dielectric response, while the dc conductivity follows Mott variable range hopping (VRH) behavior, confirming the polaronic origin of the observed dielectric relaxations. The frequency domain analysis of the dielectric spectra shows evidence for two relaxations, with the high-frequency relaxations following Mott VRH behavior more closely. Significantly, the Cr- and Ga-based analogs, CrTiNbO(6) and GaTiMO(6) (M = Ta,Nb), that were also studied, did not show these anomalies.

Pyrochlore ``dynamic spin-ice'' Pr(2)Sn(2)O(7) and monoclinic Pr(2)Ti(2)O(7): A comparative temperature-dependent Raman study

Here we report a temperature-dependent Raman study of the pyrochlore ``dynamic spin-ice'' compound Pr(2)Sn(2)O(7) and compare the results with its non-pyrochlore (monoclinic) counterpart Pr(2)Ti(2)O(7). In addition to phonon modes, we observe two bands associated with electronic Raman scattering involving crystal field transitions in Pr(2)Sn(2)O(7) at similar to 135 and 460 cm(-1) which couple strongly to phonons. Anomalous temperature dependence of phonon frequencies that are observed in Pyrochlore Pr(2)Sn(2)O(7) are absent in monoclinic Pr(2)Ti(2)O(7). This, therefore, confirms that the strong phonon-phonon anharmonic interactions, responsible for the temperature-dependent anomalous behavior of phonons, arise due to the inherent vacant sites in the pyrochlore structure. (C) 2011 Elsevier Inc. All rights reserved.

Role of rigidity and temperature in the kinetics of photodarkening in Ge(x)As((45-x))Se(55) thin films

We present insightful results on the kinetics of photodarkening (PD) in Ge(x)As(45-x)Se(55) glasses at the ambient and liquid helium temperatures when the network rigidity is increased by varying x from 0 to 16. We observe a many fold change in PD and its kinetics with decreasing network flexibility and temperature. Moreover, temporal evolution of PD shows a dramatic change with increasing x. (C)2011 Optical Society of America

Carbon based materials for low temperature detection

Resistance temperature detectors (RTDs) are being widely used to detect low temperature, while thermocouples (TCs) are being used to detect high temperature. The materials suitable for RTDs are platinum, germanium, carbon, carbon-glass, cernox, etc. Here, we have reported the possible application of another form of carbon i.e. carbon nanotubes in low temperature thermometry. It has been shown the resistance R and the sensitivity of carbon nanotube bundles can be tuned and made suitable for ultralow temperature detection. We report on the R-T measurement of carbon nanotube bundles from room temperature down to 1 K to felicitate the possible application of bundles in low temperature RTDs. ©2008 American Institute of Physics

Voltage and Temperature Scalable Standard Cell Leakage Models Based on Stacks for Statistical Leakage Characterization

With extensive use of dynamic voltage scaling (DVS) there is increasing need for voltage scalable models. Similarly, leakage being very sensitive to temperature motivates the need for a temperature scalable model as well. We characterize standard cell libraries for statistical leakage analysis based on models for transistor stacks. Modeling stacks has the advantage of using a single model across many gates there by reducing the number of models that need to be characterized. Our experiments on 15 different gates show that we needed only 23 models to predict the leakage across 126 input vector combinations. We investigate the use of neural networks for the combined PVT model, for the stacks, which can capture the effect of inter die, intra gate variations, supply voltage(0.6-1.2 V) and temperature (0 - 100degC) on leakage. Results show that neural network based stack models can predict the PDF of leakage current across supply voltage and temperature accurately with the average error in mean being less than 2% and that in standard deviation being less than 5% across a range of voltage, temperature.

Voltage and Temperature Scalable Gate Delay and Slew Models Including Intra-Gate Variations

We investigate the feasibility of developing a comprehensive gate delay and slew models which incorporates output load, input edge slew, supply voltage, temperature, global process variations and local process variations all in the same model. We find that the standard polynomial models cannot handle such a large heterogeneous set of input variables. We instead use neural networks, which are well known for their ability to approximate any arbitrary continuous function. Our initial experiments with a small subset of standard cell gates of an industrial 65 nm library show promising results with error in mean less than 1%, error in standard deviation less than 3% and maximum error less than 11% as compared to SPICE for models covering 0.9- 1.1 V of supply, -40degC to 125degC of temperature, load, slew and global and local process parameters. Enhancing the conventional libraries to be voltage and temperature scalable with similar accuracy requires on an average 4x more SPICE characterization runs.

Voltage and Temperature Scalable Gate Delay and Slew Models Including Intra-Gate Variations

We investigate the feasibility of developing a comprehensive gate delay and slew models which incorporates output load, input edge slew, supply voltage, temperature, global process variations and local process variations all in the same model. We find that the standard polynomial models cannot handle such a large heterogeneous set of input variables. We instead use neural networks, which are well known for their ability to approximate any arbitrary continuous function. Our initial experiments with a small subset of standard cell gates of an industrial 65 nm library show promising results with error in mean less than 1%, error in standard deviation less than 3% and maximum error less than 11% as compared to SPICE for models covering 0.9- 1.1 V of supply, -40degC to 125degC of temperature, load, slew and global and local process parameters. Enhancing the conventional libraries to be voltage and temperature scalable with similar accuracy requires on an average 4x more SPICE characterization runs.