926 resultados para GAN(0001) SURFACES
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Mode of access: Internet.
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Mode of access: Internet.
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"19 January 1979."
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Includes index.
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Double leaves, oriental style, in case.
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Mode of access: Internet.
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"Sefer ha-gan ḥiber ha-gaʼon Yitsḥaḳ zal ṿe-Sefer Derekh Mosheh ḥiber ha-darshan ... Mosheh beha-rav ... Maharam ha-Kohen ...".
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Prefatory note by H.F. Baker.
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Akademisk afhandling--Upsala.
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Cover title.
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"CM-1019."
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Thesis (Master's)--University of Washington, 2016-06
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Wurtzite GaN epilayers bombarded at 300 K with 200 MeV Au-197(16+) ions are studied by a combination of transmission electron microscopy (TEM) and Rutherford backscattering/channeling spectrometry (RBS/C). Results reveal the formation of near-continuous tracks propagating throughout the entire similar to1.5-mum-thick GaN film. These tracks, similar to100 Angstrom in diameter, exhibit a large degree of structural disordering but do not appear to be amorphous. Throughout the bombarded epilayer, high-resolution TEM reveals planar defects which are parallel to the basal plane of the GaN film. The gross level of lattice disorder, as measured by RBS/C, gradually increases with increasing ion fluence up to similar to10(13) cm(-2). For larger fluences, delamination of the nitride film from the sapphire substrate occurs. Based on these results, physical mechanisms of the formation of lattice disorder in GaN in such a high electronic stopping power regime are discussed. (C) 2004 American Institute of Physics.
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Motivated by Bravais' rule, of wide validity for crystals, we introduce a maximum density rule for the surfaces of quasicrystals and use it to determine the 5-, 2- and 3-fold bulk terminations in a geometric icosahedral model of i-AlPdMn and i-AlCuFe that represent surfaces.