Large strain field near a crack tip in a rubber sheet

The distribution of stress-strain near a crack tip in a rubber sheet is investigated by employing the constitutive relation given by Gao (1997). It is shown that the crack tip field is composed of two shrinking sectors and one expanding sector. The stress state near the crack tip is in uniaxial tension. The analytical solutions are obtained for both expanding and shrinking sectors.

Magnetic field design for floating zone crystal growth

The magnetic fields produced by electrical coils are designed for P-doped Si crystal growth in a floating full zone in microgravity environment. The fields are designed specially to reduce the how near the free surface and then in the melt zone by adjusting the coil positions near the melt zone. The effects of the designed magnetic fields on reducing the Row velocity and the non-uniformity of the concentration distribution in the melt zone are better than those of the case of a uniform longitudinal magnetic field, obtained by numerical simulation. It is expected to improve the radial macro-segregation and reduce the convection in the crystal growth at the same time by using the designed magnetic field.

Research on the Temperature Field in Laser Hardening

Temperature field in the laser hardening process was numerically simulated by MSC.Marc software. The influence of energy density on laser hardening effect is analyzed. Simulation result is verified through the thermocouple temperature transducer measuring the specimen surface temperature under the laser irradiation. Experimental curves of temperature versus time are in agreement with simulation results. The simulation results can be regarded as a basis for choosing laser technological parameters.

Analysis of Dislocation-Induced Strain Field in an Idealized Wafer-Bonded Microstructure

The localized dislocation at the interface induces uneven strain distribution in two wafer-bonded layers. Because of the different elastic properties of two bonding layers and this uneven strain distribution, the bilayered microstructure deflects and deflection relaxes the strains. Depending on the microstructure dimensions, elastic properties and lattice parameters, the contribution of deflection to strain field can be very significant. The interface condition also plays an important role in relaxing strain. Two models capable of describing different interface conditions are used for the analysis and offer a more comprehensive study on the dislocation-induced strain field in a wafer-bonded bilayered microstructure. The combined effect of microstructure dimensions and interface condition on the strain is presented and compared.

Numerical Analysis of LEC Growth of GaAs with an Axial Magnetic Field

A set of numerical analyses for momentum and heat transfer For a 3 in. (0.075 m) diameter Liquid Encapsulant Czochralski (LEC) growth of single-crystal GaAs with or without all axial magnetic field was carried Out using the finite-element method. The analyses assume a pseudosteady axisymmetric state with laminar floats. Convective and conductive heat transfers. radiative heat transfer between diffuse surfaces and the Navier-Stokes equations for both melt and encapsulant and electric current stream function equations Cor melt and crystal Lire considered together and solved simultaneously. The effect of the thickness of encapsulant. the imposed magnetic field strength as well as the rotation rate of crystal and crucible on the flow and heat transfer were investigated. (C) 2002 Published by Elsevier Science Ltd.

Multi-field simulations and characterization of CMOS-MEMS high-temperature smart gas sensors based on SOI technology

This paper describes multiple field-coupled simulations and device characterization of fully CMOS-MEMS-compatible smart gas sensors. The sensor structure is designated for gas/vapour detection at high temperatures (>300 °C) with low power consumption, high sensitivity and competent mechanic robustness employing the silicon-on-insulator (SOI) wafer technology, CMOS process and micromachining techniques. The smart gas sensor features micro-heaters using p-type MOSFETs or polysilicon resistors and differentially transducing circuits for in situ temperature measurement. Physical models and 3D electro-thermo-mechanical simulations of the SOI micro-hotplate induced by Joule, self-heating, mechanic stress and piezoresistive effects are provided. The electro-thermal effect initiates and thus affects electronic and mechanical characteristics of the sensor devices at high temperatures. Experiments on variation and characterization of micro-heater resistance, power consumption, thermal imaging, deformation interferometry and dynamic thermal response of the SOI micro-hotplate have been presented and discussed. The full integration of the smart gas sensor with automatically temperature-reading ICs demonstrates the lowest power consumption of 57 mW at 300 °C and fast thermal response of 10 ms. © 2008 IOP Publishing Ltd.

Crack Tip Field and J-Integral with Strain Gradient Effect

The mode I plane strain crack tip field with strain gradient effects is presented in this paper based on a simplified strain gradient theory within the framework proposed by Acharya and Bassani. The theory retains the essential structure of the incremental version of the conventional J_2 deformation theory No higher-order stress is introduced and no extra boundary value conditions beyond the conventional ones are required. The strain gradient effects are considered in the constitutive relation only through the instantaneous tangent modulus. The strain gradient measures are included into the tangent modulus as internal parameters. Therefore the boundary value problem is the same as that in the conventional theory Two typical crack Problems are studied: (a) the crack tip field under the small scale yielding condition induced by a linear elastic mode-I K-field and (b) the complete field for a compact tension specimen. The calculated results clearly show that the stress level near the crack tip with strain gradient effects is considerable higher than that in the classical theory The singularity of the strain field near the crack tip is nearly equal to the square-root singularity and the singularity of the stress field is slightly greater than it. Consequently, the J-integral is no longer path independent and increases monotonically as the radius of the calculated circular contour decreases.

Numerical Simulation of 3D-Thermal Field with Phase Transformation

以激光熔凝表面强韧化处理为背景,应用空间的弹塑性有限单元和高精度的数值算法、同时考虑材料组织性能的变化来模拟材料的温度场。主要研究激光熔凝加工中瞬时温度场数值模拟,同时考虑相变潜热的影响,为第二步热应力场及残余应力的数值模拟做准备。最后用算例验证了模型的正确性,并给出了不同时刻温度场的分布。

Theoretical simulation studies of pulsed field magnetisation of (RE)BCO bulk superconductors

The magnetisation of bulk high temperature superconductors (HTS), such as RE-Ba-Cu-O [(RE)BCO, where RE is a rare earth element or Y], by a practical technique is essential for their application in high field, permanent magnet-like devices. Research to-date into the pulsed field magnetisation (PFM) of these materials, however, has been limited generally to experimental techniques, with relatively little progress in the development of theoretical models. This is because not only is a multi-physics approach needed to take account of the heating of the samples but also the high electric fields generated are well above the regime in which there are reliable experimental results. This paper describes a framework of theoretical simulation using the finite element method (FEM) that is applicable to both single- and multi-pulse magnetisation processes of (RE)BCO bulk superconductors. The model incorporates the heat equation and provides a convenient way of determining the distribution of trapped field, current density and temperature change within a bulk superconductor at each stage of the magnetisation process. An example of the single-pulse magnetisation of a (RE)BCO bulk is described. Potentially, the model may serve as a cost-effective tool for the optimisation of the bulk geometry and the magnetisation profile in multi-pulse magnetisation processes. © 2010 IOP Publishing Ltd.

Numerical Simulation of Transient Thermal Field in Laser Melting Process

Numerical simulation of thermal field was studied in laser processing. The 3-D finite element model of transient thermal calculation is given by thermal conductive equation. The effects of phase transformation latent are considered. Numerical example is given to verify the model. Finally the real example of transient thermal field is given.