Novel applications of BEM based Poisson level set approach

Accurate and efficient computation of the distance function d for a given domain is important for many areas of numerical modeling. Partial differential (e.g. HamiltonJacobi type) equation based distance function algorithms have desirable computational efficiency and accuracy. In this study, as an alternative, a Poisson equation based level set (distance function) is considered and solved using the meshless boundary element method (BEM). The application of this for shape topology analysis, including the medial axis for domain decomposition, geometric de-featuring and other aspects of numerical modeling is assessed. © 2011 Elsevier Ltd. All rights reserved.

Time-optimal control of a 3-level quantum system and its generalization to an n-level system

We solve the problem of steering a three-level quantum system from one eigen-state to another in minimum time and study its possible extension to the time-optimal control problem for a general n-level quantum system. For the three-level system we find all optimal controls by finding two types of symmetry in the problem: ℤ2 × S3 discrete symmetry and S1 continuous symmetry, and exploiting them to solve the problem through discrete reduction and symplectic reduction. We then study the geometry, in the same framework, which occurs in the time-optimal control of a general n-level quantum system. © 2007 IEEE.

Time-optimal control of a 3-level quantum system and its generalization

We solve the problem of steering a three-level quantum system from one eigen-state to another in minimum time and study its possible extension to the time-optimal control problem for a general n-level quantum system. For the three-level system we find all optimal controls by finding two types of symmetry in the problems: ℤ × S3 discrete symmetry and 51 continuous symmetry, and exploiting them to solve the problem through discrete reduction and symplectic reduction. We then study the geometry, in the same framework, which occurs in the time-optimal control of a general n-level quantum system. Copyright ©2007 Watam Press.

Using sub-word-level information for confidence estimation with conditional random field models

The task of word-level confidence estimation (CE) for automatic speech recognition (ASR) systems stands to benefit from the combination of suitably defined input features from multiple information sources. However, the information sources of interest may not necessarily operate at the same level of granularity as the underlying ASR system. The research described here builds on previous work on confidence estimation for ASR systems using features extracted from word-level recognition lattices, by incorporating information at the sub-word level. Furthermore, the use of Conditional Random Fields (CRFs) with hidden states is investigated as a technique to combine information for word-level CE. Performance improvements are shown using the sub-word-level information in linear-chain CRFs with appropriately engineered feature functions, as well as when applying the hidden-state CRF model at the word level.

Strong carrier lifetime enhancement in GaAs nanowires coated with semiconducting polymer.

The ultrafast charge carrier dynamics in GaAs/conjugated polymer type II heterojunctions are investigated using time-resolved photoluminescence spectroscopy at 10 K. By probing the photoluminescence at the band edge of GaAs, we observe strong carrier lifetime enhancement for nanowires blended with semiconducting polymers. The enhancement is found to depend crucially on the ionization potential of the polymers with respect to the Fermi energy level at the surface of the GaAs nanowires. We attribute these effects to electron doping by the polymer which reduces the unsaturated surface-state density in GaAs. We find that when the surface of nanowires is terminated by native oxide, the electron injection across the interface is greatly reduced and such surface doping is absent. Our results suggest that surface engineering via π-conjugated polymers can substantially improve the carrier lifetime in nanowire hybrid heterojunctions with applications in photovoltaics and nanoscale photodetectors.

Compact multimode polymer waveguide bends for board-level optical interconnects

Multimode polymer waveguides are promising for use in board-level optical interconnects. In recent years, various on-board optical interconnection architectures have been demonstrated making use of passive routing waveguide components. In particular, 90° bends have played important roles in complex waveguide layouts enabling interconnection between non co-linear points on a board. Due to the dimensions and index step of the waveguides typically used in on-board optical interconnects, low-loss bends are typically limited to a radius of ∼ 10 mm. This paper therefore presents the design and fabrication of compact low-loss waveguide bends with reduced radii of curvature, offering significant reductions in the required areas for on-board optical circuits. The proposed design relies on the exposure of the bend section to the air, achieving tighter light confinement along the bend and reduced bending losses. Simulation studies carried out with ray tracing tools and experimental results from polymer samples fabricated on FR4 are presented. Low bending losses are achieved from the air-exposed bends up to 4 mm of radius of curvature, while an improvement of 14 μm in the 1 dB alignment tolerances at the input of these devices (fibre to waveguide coupling) is also obtained. Finally, the air-exposed bends are employed in an optical bus structure, offering reductions in insertion loss of up to 3.8 dB. © 2013 IEEE.

Nonequilibrium dynamics of photoexcited electrons in graphene: Collinear scattering, Auger processes, and the impact of screening

We present a combined analytical and numerical study of the early stages (sub-100-fs) of the nonequilibrium dynamics of photoexcited electrons in graphene. We employ the semiclassical Boltzmann equation with a collision integral that includes contributions from electron-electron (e-e) and electron-optical phonon interactions. Taking advantage of circular symmetry and employing the massless Dirac fermion (MDF) Hamiltonian, we are able to perform an essentially analytical study of the e-e contribution to the collision integral. This allows us to take particular care of subtle collinear scattering processes - processes in which incoming and outgoing momenta of the scattering particles lie on the same line - including carrier multiplication (CM) and Auger recombination (AR). These processes have a vanishing phase space for two-dimensional MDF bare bands. However, we argue that electron-lifetime effects, seen in experiments based on angle-resolved photoemission spectroscopy, provide a natural pathway to regularize this pathology, yielding a finite contribution due to CM and AR to the Coulomb collision integral. Finally, we discuss in detail the role of physics beyond the Fermi golden rule by including screening in the matrix element of the Coulomb interaction at the level of the random phase approximation (RPA), focusing in particular on the consequences of various approximations including static RPA screening, which maximizes the impact of CM and AR processes, and dynamical RPA screening, which completely suppresses them. © 2013 American Physical Society.

A hybrid density functional view of native vacancies in gallium nitride.

We investigated the transition energy levels of the vacancy defects in gallium nitride by means of a hybrid density functional theory approach (DFT). We show that, in contrast to predictions from a recent study on the level of purely local DFT, the inclusion of screened exchange stabilizes the triply positive charge state of the nitrogen vacancy for Fermi energies close to the valence band. On the other hand, the defect levels associated with the negative charge states of the nitrogen vacancy hybridize with the conduction band and turn out to be energetically unfavorable, except for high n-doping. For the gallium vacancy, the increased magnetic splitting between up-spin and down-spin bands due to stronger exchange interactions in sX-LDA pushes the defect levels deeper into the band gap and significantly increases the associated charge transition levels. Based on these results, we propose the ϵ(0| - 1) transition level as an alternative candidate for the yellow luminescence in GaN.