The distribution and concentration levels of trace metals in water and sediments of Lake Victoria, Kenya

The water and bottom sediments of Lake Victoria (Kenya) were analysed for A1, Fe, Mn, Zn, Pb, Cu, Cr and Cd. The total metal concentrations were determined and their mean variations and distributions discussed. The bottom lake waters showed higher concentration levels than the surface waters. The range of values (in mg/l) in the bottom and surface lake waters were as follows: Surface Waters: A1(0.08 - 3.98), Fe(0.09 - 4.01), Mn(0.02 - 0.10). Zn(0.01 -0.07), Pb(0.001- 0.007), Cu(not detected - 0.006), Cr(not detected - 0.004). Bottom Waters: A1(0.1 0 - 6.59), Fe(0.23 - 9.64), Mn(0.04 - 0.39), Zn(0.01- 0.08), Pb(0.002 - 0.009), Cu(not detected - 0.03). Cr(not detected -0.002). River mouths and shallow areas in the lake showed higher total metal concentrations than offshore deeper areas. Apart from natural metal levels, varied urban activities and wastes greatly contribute to the lake metal pollution as shown by high Pb and Zn levels in sediments, around Kisumu and Homa Bay areas. Other comparatively high values and variations could be attributed to the varied geological characteristics of the lake and its sediments. Compared to the established W.H.O (1984) drinking water standards manganese, aluminium and iron levels were above these limits whereas zinc, lead, chromium, copper and cadmium were below.

Plastic deformation of metals and alloys

This chapter focuses on relationships between plastic deformation structures and mechanical properties in metals and alloys deforming by dislocation glide. We start by summarizing plastic deformation processes, then look at the fundamental mechanisms of plastic deformation and explore how deformation structures evolve. We then turn to experimental techniques for characterization which have allowed deformation microstructures to be quantified in terms of common structural parameters. The microstructural evolution has been described over many length scales and analyzed theoretically based on general principles. The deformation microstructures are related to work hardening stages. Finally we identify correlations between a wide range of microstructural features and mechanical properties, particularly flow stress, and use experimental observations to illustrate their inter-relationships.

TRANSIENT SCANNING ELECTRON BEAM ANNEALING METHODS USED TO STUDY DIFFUSION AND DEFECTS IN IMPLANTED SILICON.

Rapid thermal annealing of arsenic and boron difluoride implants, such as those used for source/drain regions in CMOS, has been carried out using a scanning electron beam annealer, as part of a study of transient diffusion effects. Three types of e-beam anneal have been performed, with peak temperatures in the range 900 -1200 degree C; the normal isothermal e-beam anneals, together with sub-second fast anneals and 'dual-pulse' anneals, in which the sample undergoes an isothermal pre-anneal followed by rapid heating to the required anneal temperature is less than 0. 5s. The diffusion occuring during these anneal cycles has been modelled using SPS-1D, an implant and diffusion modelling program developed by one of the authors. This has been modified to incorporate simulated temperature vs. time cycles for the anneals. Results are presented applying the usual equilibrium clustering model, a transient point-defect enhancement to the diffusivity proposed recently by Fair and a new dynamic clustering model for arsenic. Good agreement with SIMS measurements is obtained using the dynamic clustering model, without recourse to a transient defect model.

SIMPLE REMESHING SCHEME FOR THE FINITE ELEMENT BASED SIMULATION OF DOPANT DIFFUSION IN SILICON.

Process simulation programs are valuable in generating accurate impurity profiles. Apart from accuracy the programs should also be efficient so as not to consume vast computer memory. This is especially true for devices and circuits of VLSI complexity. In this paper a remeshing scheme to make the finite element based solution of the non-linear diffusion equation more efficient is proposed. A remeshing scheme based on comparing the concentration values of adjacent node was then implemented and found to remove the problems of oscillation.