954 resultados para CHEMICAL-SYNTHESIS
Resumo:
We report the synthesis of multiwalled carbon nanotubes (MWCNTs) encapsulated with Co/Pd magnetic and nonmagnetic multi-metal nanowires using Co and Pd thin-layers deposited on Si substrate by microwave plasma enhanced chemical vapor deposition using a bias-enhanced growth method. Detailed structural and compositional investigations of these metal nanowires inside MWCNTs were carried out by scanning electron microscopy and transmission electron microscopy to elucidate the growth mechanisms. Energy dispersive X-ray spectroscopy revealed that MWCNTs were encapsulated with Co and Pd nanowires, separately, at the tube top and the bottom of Co nanowire, respectively. The face-centered-cubic (fcc) structure of Co nanowires was confirmed by a selected area diffraction pattern. We proposed a fruitful description for the encapsulating mechanisms of both Co and Pd multi-metal nanowires. © 2006 Elsevier B.V. All rights reserved.
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(1R,4R)-2-(4-Hydroxybenzylidene)- and (1R,4R)-2-(4′-hydroxybiphenyl- 4-yl)methylene-p-menthan-3-ones were synthesized by condensation of (-)-menthone with O-tetrahydropyran-2-yl derivatives of 4-hydroxybenzaldehyde and 4′-hydroxy-4-formylbiphenyl, respectively, in a DMSO - base medium followed by the removal of the protective group. The reactions of these hydroxy derivatives with 4-alkylbenzoic, 4-alkyloxybenzoic, trans-4-alkylcyclohexane-4- carboxylic, and 4′-alkylbiphenyl-4-carboxylic acids afforded three series of new chiral esters. Compounds containing the arylidene moiety with three benzene rings were found to exhibit liquid-crystalline properties. The characteristic features of these compounds are discussed based on the results of studies by polarizing microscopy, differential scanning calorimetry, and small-angle X-ray scattering. It was found that the mesomorphic compounds under study can form a smectic A mesophase, twist grain boundary mesophases (TGBA), and blue phases in a wide temperature range. Upon dissolution of certain of chiral compounds in 4′-cyano-4-pentylbiphenyl, a rather high twisting power and the thermal stabilizing effect on mesophases were observed.
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Superparamagnetic iron oxide nanoparticles were synthesized by injecting ferrocene vapor and oxygen into an argon/helium DC thermal plasma. Size distributions of particles in the reactor exhaust were measured online using an aerosol extraction probe interfaced to a scanning mobility particle sizer, and particles were collected on transmission electron microscopy (TEM) grids and glass fiber filters for off-line characterization. The morphology, chemical and phase composition of the nanoparticles were characterized using TEM and X-ray diffraction, and the magnetic properties of the particles were analyzed with a vibrating sample magnetometer and a magnetic property measurement system. Aerosol at the reactor exhaust consisted of both single nanocrystals and small agglomerates, with a modal mobility diameter of 8-9 nm. Powder synthesized with optimum oxygen flow rate consisted primarily of magnetite (Fe 3O 4), and had a room-temperature saturation magnetization of 40.15 emu/g, with a coercivity and remanence of 26 Oe and 1.5 emu/g, respectively. © Springer Science+Business Media, LLC 2011.
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The conversion of silver nanoparticle (NP) paste films into highly conductive films at low sintering temperature is an important requirement for the developing areas of additive fabrication and printed electronics. Ag NPs with a diameter of ∼10 nm were prepared via an improved chemical process to produce viscous paste with a high wt%. The paste consisted of as-prepared Ag NP and an organic vehicle of ethylcellulose that was deposited on glass and Si substrates using a contact lithographic technique. The morphology and conductivity of the imprinted paste film were measured as a function of sintering temperature, sintering time and the percentage ratio of Ag NP and ethylcellulose. The morphology and conductivity were examined using scanning electron microscopy (SEM) and a two-point probe electrical conductivity measurement. The results show that the imprinted films were efficiently converted into conducting states when exposed to sintering temperature in the range of 200-240 °C, this temperature is lower than the previously reported values for Ag paste. © 2010 Elsevier B.V. All rights reserved.
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π-Conjugated molecular materials with fused rings are the focus of considerable interest in the emerging area of organic electronics, since the combination of excellent charge carrier mobility and high stability may lead to their practical applications. This tutorial review discusses the synthesis, properties and applications of π-conjugated organic semiconducting materials, especially those with fused rings. The achievements to date, the remaining problems and challenges, and the key research that needs to be done in the near future are all discussed.
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Chemical vapor deposition on copper is the most widely used method to synthesize graphene at large scale. However, the clear understanding of the fundamental mechanisms that govern this synthesis is lacking. Using a vertical-flow, cold-wall reactor with short gas residence time we observe the early growths to study the kinetics of chemical vapor deposition of graphene on copper foils and demonstrate uniform synthesis at wafer scale. Our results indicate that the growth is limited by the catalytic dissociative dehydrogenation on the surface and copper sublimation hinders the graphene growth. We report an activation energy of 3.1 eV for ethylene-based graphene synthesis. © The Electrochemical Society.
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ZnO nanoflowers are synthesized on AIN films by solution method. The synthesized nanoflowers are composed of nanorods, which are pyramidal and grow from a central point, thus forming structures that are flower-shaped as a whole. The nanoflowers have two typical morphologies: plate-like and bush-like. The XRD spectrum corresponds to the side planes of the ZnO nanorods made up of the nanoflowers. The micro-Raman spectrum of the ZnO nanoflowers exhibits the E-2 (high) mode and the second order multiple-phonon mode. The photoluminescence spectrum of the ZnO nanoflowers exhibits ultraviolet emission centred at 375 nm and a broad green emission centred at 526 nm.
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We report the synthesis and characterization of Zn-doped InN nanorods by metal-organic chemical vapor deposition. Electron microscopy images show that the InN nanorods are single-crystalline structures and vertically well-aligned. Energy-dispersive X-ray spectroscopy analyses suggest that Zn ions are distributed nonhomogenously in InN nanorods. Simulations based on diffusion model show that the doping concentration along the radial direction of InN nanorod is bowl-like from the exterior to the interior, the doping concentration decreases, and Such dopant distribution result in a bimodal EDXS spectrum of Zn across the nanorod. The study of the mechanism of doping effect is useful for the design of InN-based nanometer devices. Also, high-quality Zn-doped InN nanorods will be very attractive as building blocks for nano-optoelectronic devices.'
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Composite AlN powder, mixed with the sintering additive Y2O3, was synthesized by the direct nitridation of molten Al-Mg-Y alloys. The character of products was determined by means of electron microscopy, X-ray diffraction, granularmetric analysis and chemical composition analysis etc. The results show that the nitridation rate of the raw alloys is higher, and the nitridation products axe porous enough to be easily crushed. Composite AlN powder, obtained by the Lanxide method, has excellent characters such as high purity, especially low oxygen content, and narrow well-distributed grain size and so on.
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GaN nanotip triangle pyramids were synthesized on 3C-SiC epilayer via an isoelectronic In-doping technique. The synthesis was carried out in a specially designed two-hot-boat chemical vapor deposition system. In (99.999%) and molten Ga (99.99%) with a mass ratio of about 1:4 were used as the source, and pieces of Si (111) wafer covered with 400-500 nm 3C-SiC epilayer were used as the substrates. The products were analyzed by x-ray diffraction, field emission scanning electron microscopy, high-resolution transmission electron microscopy, selected area electron diffraction, Raman spectroscopy, and photoluminescence measurements. Our results show that the as-synthesized GaN pyramids are perfect single crystal with wurtzite structure, which may have potential applications in electronic/photonic devices.
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Cubic boron nitride (c-BN) attracts widespread interest as a promising material for many potential applications because of its unique physical and chemical properties. Since the 1980's the research in c-BN thin films has been carried out, which reached its summit in the mid of 1990's, then turned into a downward period. In the past few years, however, important progress was achieved in synthesis and properties of cubic boron nitride films, such as obtaining > 1 mu m thick c-BN films, epitaxial growth of single crystalline c-BN films, and advances in mechanics properties and microstructures of the interlayer of c-BN films. The present article reviews the current status of the synthesis and properties of c-BN thin films.
Resumo:
We report the growth of hexagonal ZnO nanorods and nanoflowers on GaN-based LED epiwafer using a solution deposition method. We also discuss the mechanisms of epitaxial nucleation and of the growth of ZnO nanorods and nanoflowers. A GaN-based LED epiwafer was first deposited on a sapphire substrate by MOCVD with no electrode being fabricated on it. Vertically aligned ZnO nanorods with an average height of similar to 2.4 mu m were then grown on the LED epiwafer, and nanoflowers were synthesized on the nanorods. The growth orientation of the nanorods was perpendicular to the surface, and the synthesized nanoflowers were composed of nanorods. The micro-Raman spectra of the ZnO nanorods and nanoflowers are similar and both exhibit the E-2 (high) mode and the second-order multiple-phonon mode. The photoluminescence spectrum of ZnO nanostructures exhibits ultraviolet emission centred at about 380 nm and a broad and enhanced green emission centred at about 526 nm. The green emission of the ZnO nanostructures combined with the emission of InGaN quantum wells provides a valuable method to improve the colour rendering index (CRI) of LEDs.