Theoretical and Experimental Evaluation of Pulsating Torque Produced by Induction Motor Drives Controlled With Advanced Bus-Clamping Pulsewidth Modulation

This paper investigates possible reduction of pulsating torque in open-loop and vector-controlled induction motor drives through deployment of certain advanced bus-clamping pulsewidth modulation (ABCPWM) method. Toward this goal, a simple and machine-independent method is proposed to analyze the torque harmonic spectrum of a voltage source inverter fed induction motor, operated with any real-time pulsewidth modulation (PWM) method. The analytically evaluated torque harmonic spectra, pertaining to conventional space vector PWM (CSVPWM), bus-clamping PWM (BCPWM), and ABCPWM, are validated through simulation and experimental results. Theoretical and experimental studies bring out the superiority of the ABCPWM in terms of torque harmonics over CSVPWM and BCPWM. The magnitude of the dominant torque harmonic with the ABCPWM scheme is shown to be significantly lower than that with CSVPWM, over a wide range of speed. The rms torque ripple (i.e., total rms value of all harmonic torques) is lower with ABCPWM than with BCPWM over the entire range of speed.

On the Geometrically Dependent Quasi-Saturation and g(m) Reduction in Advanced DeMOS Transistors

This paper reveals an early quasi-saturation (QS) effect attributed to the geometrical parameters in shallow trench isolation-type drain-extended MOS (STI-DeMOS) transistors in advanced CMOS technologies. The quasi-saturation effect leads to serious g(m) reduction in STI-DeMOS. This paper investigates the nonlinear resistive behavior of the drain-extended region and its impact on the particular behavior of the STI-DeMOS transistor. In difference to vertical DMOS or lateral DMOS structures, STI-DeMOS exhibits three distinct regions of the drain extension. A complete understanding of the physics in these regions and their impact on the QS behavior are developed in this paper. An optimization strategy is shown for an improved g(m) device in a state-of-the-art 28-nm CMOS technology node.

Ultra-high density carbon nanotubes on Al-Cu for advanced vias

An integration scheme for carbon nanotube via interconnects is described to produce nanotube densities of 2.5 1012 tubes/cm2 or 8 1012 walls/cm2 on metallic Al-Cu lines, an order of magnitude beyond the previous state of art, and, for first time, close to that needed for implementation. ©2010 Crown.