The spatial pattern of the small fish community in the Biandantang Lake - a small shallow lake along the middle reach of the Yangtze River, China

The spatial pattern of the small fish community was studied seasonally in 1996 in the Biandantang Lake. Based on plant cover, the lake was divided into five habitats, arranged in the order by plant structure complexity from complex to simple: Vallisneria spiralis habitat (V habitat), Vallisneria spiralis-Myriophyllum spicatum habitat (V-M habitat), Myriophyllum spicatum habitat (M habitat), Nelunbo nucefera habitat (N habitat), and no vegetation habitat (NV habitat). A modified popnet was used for quantitative sampling of small fishes. A total of 16 fish species were collected; Hypseleotris swinhonis, Ctenogobius giurinus, Pseudorasbora parva, Carassius auratus and Paracheilognathus imberis were the five numerically dominant species. In both summer and autumn, the total density of small fishes was about 10 ind m(-2). Generally, Ctenogobius giurinus, a sedatory, benthic fish, was distributed more or less evenly among the five habitats, while the other four species had lower densities in the N habitat and NV habitat, which had the simplest structures. The distribution of the small fish species showed seasonal variations. In winter, most species concentrated in the V habitat, which had the most complex structure. In spring, the fish had low densities in the N and NV habitat, and were more or less evenly distributed in the other habitats. In summer, the fish had a low density in the NV habitat, and were evenly distributed in the other habitats. In autumn, the fish had higher densities in the V-M and M habitats than in the others. Generally, spatial overlaps between the dominant species were higher in winter than in the other seasons. It was suggested that the variations in the importance of predation risk and resource competition in habitat choice determined the seasonal changes of spatial patterns in the small fishes in the Biandantang Lake.

Effects of silver carp density on zooplankton and water quality: Implications for eutrophic lakes in China

We examined the responses of zooplankton community, water transparency, chlorophyll a and nutrients to manipulation of density of silver carp (Hypophthyalmichthys molitrix) in an one-way factorial experiment using enclosures placed in Donghu (East Lake, 30 degrees 33' N, 114 degrees 23' E), located in Wuhan, P. R. China. Enclosures (18.75 m(3)) were treated with four silver carp densities, 0, 81, 225, 485 g/m(2). Total zooplankton abundance (excluding nauplii and rotifers except for Asplanchna sp.) and the mean size of dominant cladoceran species were significantly greater in enclosures with 0 and 81 fish densities than those in enclosures with 225 and 485 fish densities. Water transparency also improved significantly when silver carp densities were 0 or 81 g/m(2). We did not find significant effects of silver carp density on chlorophyll a, total phosphorus, or total nitrogen concentrations. We conclude that by reducing planktivorous fish to below the current density (190 g/m(2)), the zooplankton community can be shifted from the dominance of small-bodied Moina sp. to dominance of large-bodied Daphnia sp. Further, the water clarity can be increased.

Fabrication of GdSi2 film by low-energy ion-beam implantation

Single-phase gadolinium disilicide was fabricated by a low-energy ion-beam implantation technique. Auger electron spectroscopy and X-ray photoelectron spectroscopy were used to determine the composition and chemical states of the film. The structure of the sample was analyzed by X-ray diffraction and the surface morphology was investigated by scan electron microscopy. Based on the measurements, only orthorhombic GdSi2 phase was found in the sample and the surface morphology was pitting. After annealing at 350degreesC for 30 min at Ar atmosphere, the full-width at half-maximum of GdSi2 became narrower. It indicates that the GdSi2 is crystallized better after annealing. (C) 2003 Elsevier B.V. All rights reserved.

Electrical characterization of Er- and Pr-implanted GaN films

Hall, current-voltage, and deep-level transient spectroscopy measurements were used to characterize the electrical properties of metalorganic chemical vapor deposition grown undoped, Er- and Pr-implanted GaN films. Only one deep level located at 0.270 eV below the conduction band was found in the as-grown GaN films. However, four defect levels located at 0.300, 0.188, 0.600, and 0.410 eV below the conduction band were found in the Er-implanted GaN films after annealing at 900 degrees C for 30 min, and four defect levels located at 0.280, 0.190, 0.610, and 0.390 eV below the conduction band were found in the Pr-implanted GaN films after annealing at 1050 degrees C for 30 min. The origins of the deep defect levels are discussed. (C) 2005 American Institute of Physics.

Rapid photoluminescence quenching in GaInNAs quantum wells at low temperature

Temperature dependence of optical properties of GaInNAs/GaAs quantum wells (QWs) has been studied by photoluminescence (PL) and time-resolved PL. A rapid PL quenching is observed even at very low temperature and is of the excitation power dependence. These results strongly suggest that the non-radiative recombination process plays a very important role at low temperature. In the TRPL measurement the shape of the PL decay curve shows significant difference under different excitation powers. It is attributed to the different involvement of non-radiative recombination in the overall recombination process. The TRPL data are well fitted with the rate equation involving both the radiative and non-radiative recombination. (c) 2006 Elsevier B.V. All rights reserved.

Deep level transient spectroscopy studies of Er and Pr implanted GaN films

Deep level transient spectroscopy measurements were used to characterize the electrical properties of metal organic chemical vapor deposition grown undoped, Er-implanted and Pr-implanted GaN films. Only one deep level located at 0.270 eV below the conduction band was found in the as-grown GaN films. But four defect levels located at 0.300 eV, 0.188 eV, 0.600 eV and 0.410 eV below the conduction band were found in the Er-implanted GaN films after annealing at 900 degrees C for 30 min, and four defect levels located at 0.280 eV, 0.190 eV, 0.610 eV and 0.390 eV below the conduction band were found in the Pr-implanted GaN films after annealing at 1050 degrees C for 30min. The origins of the deep defect levels are discussed. After annealing at 900 degrees C for 30min in a nitrogen flow, Er-related 1538nm luminescence peaks could be observed for the Er-implanted GaN sample. The energy-transfer and luminescence mechanism of the Er-implanted GaN film are described.

Investigation on the nonlinear optical properties of the DCNP/PEK-c guest-host polymer films

The polyetherketone (PEK-c) guest-host polymer thin films doped with 3-(1,1-dicyanothenyl)-1-phenyl-4,5-dihydro-1H-pryazole (DCNP) were prepared. The polymer films were investigated with in situ second-harmonic generation (SHG) measurement. The corona poling temperature was optimized by the temperature dependence of the in situ SHG signal intensity under the poling electric field applying. The temporal and temperature stability of the second-order properties of the poled polymer film were measured by the in situ SHG signal intensity probing. The second-order NLO coefficient chi ((2))(33) = 32.65 pm/V at lambda = 1064 nm was determined by using the Makel fringe method after poling under the optimal poling condition. The dispersion of the NLO coefficient of the guest-host polymer system was determined by the measured value of chi ((2))(33) at 1064 nm and the two-level model.

Properties of proton-implanted p-type Si: supports for the models explaining a novel p-n junction in Si

Proton-implanted and annealed p-type Si wafers were investigated by using both transmission electron microscopy and spreading resistivity probe. The novel pn junction [Li et al., Mat. Res. Sec. Symp, Proc. 396 (1996) 745], as obtained by using n-type Si subjected to the process as this work, was not observed in the p-type Si wafers in this work. A drop of superficial resistivity in the sample was found and is explained by the proposed models interpreting the novel pn junction. (C) 2000 Elsevier Science B.V. All rights reserved.

High-performance 980-nm quantum-well lasers using a hybrid material system of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers grown by metal-organic chemical vapor deposition

We report on the material growth and fabrication of high-performance 980-nm strained quantum-well lasers employing a hybrid material system consisting of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers. The use of AlGaAs cladding instead of InGaP provides potential advantages in flexibility of laser design, simple epitaxial growth, and improvement of surface morphology and laser performance. The as-grown InGaAs-InGaAsP(1.6 eV)-AlGaAs(1.95 eV) lasers achieve a low threshold current density of 150 A/cm(2) (at a cavity length of 1500 mu m), internal quantum efficiency of similar to 95%, and low internal loss of 1.8 cm(-1). Both broad-area and ridge-waveguide laser devices are fabricated. For 100-mu m-wide stripe lasers with a cavity length of 800 Irm, a slope efficiency of 1.05 W/A and a characteristic temperature coefficient (T-0) of 230 K are achieved. The lifetime test demonstrates a reliable performance. The comparison with our fabricated InGaAs-InGaAsP(1.6 eV)-AlGaAs(1.87 eV) lasers and Al-free InGaAs-InGaAsP (1.6 eV)-InGaP lasers are also given and discussed. The selective etching between AlGaAs and InGaAsP is successfully used for the formation of a ridge-waveguide structure. For 4-mu m-wide ridge-waveguide laser devices, a maximum output power of 350 mW is achieved. The fundamental mode output power can be up to 190 mW with a slope efficiency as high as 0.94 W/A.

High-density InAs nanowires realized in situ on (100) InP

High-density InAs nanowires embedded in an In0.52Al0.48As matrix are fabricated in situ by molecular beam epitaxy on (100) InP. The average cross section of the nanowires is 4.5 x 10 nm(2). The linear density is as high as 70 wires/mu m. The spatial alignment of the multilayer arrays exhibit strong anticorrelation in the growth direction. Large polarization anisotropic effect is observed in polarized photoluminescence measurements. (C) 1999 American Institute of Physics. [S0003-6951(99)04134-0].

Structural and magnetic properties of hydrides R3Fe29-xVxHy (R = Y, Ce, Nd, Sm, Gd, Tb, and Dy)

A systematic investigation of crystallographic and intrinsic magnetic properties of the hydrides R3Fe29 - xVxHy (R = Y, Ce, Nd, Sm, Gd, Tb, and Dy) has been performed in this work. The lattice constants a, b, and c and the unit cell volume of R3Fe29 - xVxHy decrease with increasing rare-earth atomic number from Nd to Dy, except for Ce, reflecting the lanthanide contraction. Hydrogenation results in regular anisotropic expansions along the a-, b-, and c-axes in this series of hydrides. Abnormal crystallographic and magnetic properties of Ce3Fe27.5V1.5H6.5, like Ce3Fe27.5V1.5, suggest that the Ce ion is non-triply ionized. Hydrogenation leads to the increase in both Curie temperature for all the compounds and in the saturation magnetization at 4.2 K and RT for R3Fe29 - xVx with R = Y, Ce, Nd, Sm, Gd, and Dy, except for Tb. Hydrogenation also leads to a decrease in the anisotropy field at 4.2 K and RT for R3Fe29 - xVx with R = Y, Ce, Nd, Gd, Tb, and Dy, except for Sm. The Ce3Fe27.5V1.5 and Gd3Fe28.4V0.6 show the larger storage of hydrogen with y = 6.5 and 6.9 in these hydrides. (C) 1998 Elsevier Science B.V. All rights reserved.

DNA装配中的纠错

DNA装配问题是指把各个读出序列（reads）拼接成一条完整的DNA链，即确定原DNA链的核苷酸“A，T，C，G”的排列顺序。实验中，由于各种原因测出的读出片段序列与DNA链的实际结果会有误差，这些误差会影响到用于装配的算法的性能，因此需要对测出的读出序列进行纠错。现有的算法如： ECINDEL和SRCorr都能够对实验数据进行纠错。但是它们都是根据某个读出序列出现的次数来判断它的正确性。这类算法首先选择参数k和M，若读出序列所有长度为k的子串出现的次数均大于M次，则它为正确的读出序列，即确实为原DNA链的子串。同时，还可以利用这些长度为k的子串来对原来的读出序列片段进行纠错。 然而，在这些算法中，M的选择要么是一个固定值，要么是随机的，使得这些算法在纠错问题上的表现并不稳定。 本文我们计算长度为k的子串出现M次时，它的真阳性（确实为原DNA链的一部分）的概率以及假阳性和假阴性的概率。根据计算结果，我们可以选择一个最优的M值使得最后选取的子串的错误最少，即假阳性的子串与假阴性的子串的数量之和最少。我们在模拟数据和实际数据上进行了验证，与之前的纠错算法ECINDEL，SRCorr相比，我们的算法总的错误率降低了77.6％和65.1％。

有限构模器的扩展及其在形式化方法中的应用

规约在软件开发和验证中占有重要地位 .对于以一阶逻辑为基础的规约 ,可以利用有限模型构造技术对其执行并测试 .文中研究规约中某些特性的处理 ,包括存在量词以及二元关系的传递闭包 .对已有的一个构模工具进行扩充 ,发现了文献中的若干错误