Colliding-pulse modelocked quantum dot lasers

Colliding pulse modelocking is demonstrated for the first time in quantum dot lasers. Using 3.9 mm-long devices with a 245 pm-long central absorber, 7 ps pulses at a repetition rate of 20 GHz is obtained. For Gaussian pulses a time-bandwidth product close to the Fourier transform limit is determined. These results confirm the potential of quantum dot lasers for high repetition rate harmonic modelocking.

Static shape control of repetitive structures integrated with piezoelectric actuators

In this paper, several simplification methods are presented for shape control of repetitive structures such as symmetrical, rotational periodic, linear periodic, chain and axisymmetrical structures. Some special features in the differential equations governing these repetitive structures are examined by considering the whole structures. Based on the special properties of the governing equations, several methods are presented for simplifying their solution process. Finally, the static shape control of a cantilever symmetrical plate with piezoelectric actuator patches is demonstrated using the present simplification method. The result shows that present methods can effectively be used to find the optimal control voltage for shape control.

High photoluminescence quantum efficiency InGaN multiple quantum well structures emitting at 380 nm

In this paper we report the design of high room temperature photoluminescence internal efficiency InGaN-based quantum well structures emitting in the near ultraviolet at 380 nm. To counter the effects of nonradiative recombination the quantum wells were designed to have a large indium fraction, high barriers, and a small quantum well thickness. To minimize the interwell and interbarrier thickness fluctuations we used Al0.2In0.005Ga0.795N barriers, where the inclusion of the small fraction of indium was found to lead to fewer structural defects and a reduction in the layer thickness fluctuations. This approach has led us to achieve, for an In0.08Ga0.92N/Al0.2In0.005Ga0.795N multiple quantum well structure with a well width of 1.5 nm, a photoluminescence internal efficiency of 67% for peak emission at 382 nm at room temperature. (c) 2007 American Institute of Physics.

Optical and micro-structural properties of high photoluminescence efficiency InGaN/AlInGaN quantum well structures

We have studied the optical properties of a series of InGaN/AlInGaN 10-period multiple quantum wells (MQW) with differing well thickness grown by metal-organic vapor-phase epitaxy that emit at around 380 nm. The aim of this investigation was to optimise the room temperature internal quantum efficiency, thus the quantum well (QW) thicknesses were accordingly chosen so that the overlap of the electron/hole wave function was maximised. At low temperature, we observed a reduction of the photo luminescence decay time with decreasing well width in line with the theoretical predictions. For a structure with well thicknesses of 1.5 nm, we measured a photoluminescence internal quantum efficiency of 67% at room temperature with a peak emission wavelength of 382 nm. (c) 2006 Elsevier B.V. All rights reserved.

A generalized self-consistent method accounting for fiber section shape

A three-phase confocal elliptical cylinder model is proposed for fiber-reinforced composites, in terms of which a generalized self-consistent method is developed for fiber-reinforced composites accounting for variations in fiber section shapes and randomness in fiber section orientation. The reasonableness of the fiber distribution function in the present model is shown. The dilute, self-consistent, differential and Mori-Tanaka methods are also extended to consider randomness in fiber section orientation in a statistical sense. A full comparison is made between various micromechanics methods and with the Hashin and Shtrikman's bounds. The present method provides convergent and reasonable results for a full range of variations in fiber section shapes (from circular fibers to ribbons), for a complete spectrum of the fiber volume fraction (from 0 to 1, and the latter limit shows the correct asymptotic behavior in the fully packed case) and for extreme types of the inclusion phases (from voids to rigid inclusions). A very different dependence of the five effective moduli on fiber section shapes is theoretically predicted, and it provides a reasonable explanation on the poor correlation between previous theory and experiment in the case of longitudinal shear modulus.

Evidence of quantum lateral confinement in side-gated resonant tunnelling diodes formed by patterned substrate regrowth

MBE regrowth on patterned np-GaAs wafers has been used to fabricate GaAs/AlGaAs double barrier resonant tunnel diodes with a side-gate in the plane of the quantum well. The physical diameters vary from 1 to 20 μm. For a nominally 1 μm diameter diode the peak current is reduced by more than 95% at a side-gate voltage of -2 V at 1.5 K, which we estimate corresponds to an active tunnel region diameter of 75 nm ± 10 nm. At high gate biases additional structure appears in the conductance data. Differential I-V measurements show a linear dependence of the spacing of subsidiary peaks on gate bias indicating lateral quantum confinement. © 1996 American Institute of Physics.

Gain bandwidth characterization of surface-emitting quantum well laser gain structures for femtosecond operation

We present a method to experimentally characterize the gain filter and calculate a corresponding parabolic gain bandwidth of lasers that are described by "class A" dynamics by solving the master equation of spectral condensation for Gaussian spectra. We experimentally determine the gain filter, with an equivalent parabolic gain bandwidth of up to 51 nm, for broad-band InGaAs/GaAs quantum well gain surface-emitting semiconductor laser structures capable of producing pulses down to 60 fs width when mode-locked with an optical Stark saturable absorber mirror. © 2010 Optical Society of America.