Optical and electrical properties of SnS semiconductor crystals grown by physical vapor deposition technique

Tin sulfide (SnS) is a material of interest for use as an absorber in low cost solar cells. Single crystals of SnS were grown by the physical vapor deposition technique. The grown crystals were characterized to evaluate the composition, structure, morphology, electrical and optical properties using appropriate techniques. The composition analysis indicated that the crystals were nearly stoichiometric with Sn-to-S atomic percent ratio of 1.02. Study of their morphology revealed the layered type growth mechanism with low surface roughness. The grown crystals had orthorhombic structure with (0 4 0) orientation. They exhibited an indirect optical band gap of 1.06 eV and direct band gap of 1.21 eV with high absorption coefficient (up to 10(3) cm(-1)) above the fundamental absorption edge. The grown crystals were of p-type with an electrical resistivity of 120 Omega cm and carrier concentration 1.52 x 10(15) cm(-3). Analysis of optical absorption and diffuse reflectance spectra showed the presence of a wide absorption band in the wavelength range 300-1200 nm, which closely matches with a significant part of solar radiation spectrum. The obtained results were discussed to assess the suitability of the SnS crystal for the fabrication of optoelectronic devices. (C) 2011 Elsevier B.V. All rights reserved.

Critical exponent of the electrical conductivity in the paracoherence region of a thin film of YBa2Cu3O7?x

Critical exponent of the electrical conductivity in the paracoherence region (gamma) of the high temperature superconductor YBa2Cu3O7-x (YBCO) has been estimated for high quality thin film on ZrO2 substrate prepared by high pressure oxygen sputtering. High energy ion irradiation was carried out using 100 MeV O-16(7+) ions at liquid nitrogen to see the effects of disorder on the value of the exponent. The critical exponent from a value of about 2 to 1.62 upon irradiation. Studies were also carried film to see the effect of ageing and annealing.

Diamond-like carbon coating for optical windows

Hard, low stress diamond-like carbon films have been deposited by plasma assisted chemical vapour deposition technique, The various substrates include soft IR components like ZnS and ZnSe windows, Gaseous precursors such as propene, ethyl alcohol and acetone have been used to synthesize the films to study the nature of precursors in determining the film compatibility with the underlying component (substrate), The residual compressive stresses, the Young's modulus and the adhesion energy of the films have been estimated to be 10(10) dynes/cm(2), 10(10) N/m(2) and 1000 ergs/cm(2) respectively. To alleviate film failure, a study on the effects of additive gases such as hydrogen and the use of buffer layers such as ZrO2, has been undertaken, The diamond-like carbon films produced here are hard (5000 kg/mm(2)), specularly smooth in the wavelength region from 2.5 mu m to 20 mu m, with no microstructural features and have excellent adhesion on ZnS and ZnSe windows. The figure of merit of these films for aero-space applications has been evaluated by subjecting the film-buffer layer ZnS or ZnSe composite stack to wind, dust and rain erosion studies and by establishing the integrity of the specular IR transmittance of the stack upto 16 or 20 mu m as the case may be.

Growth and characterization of laser-deposited Ag-doped YBa2Cu3O7−x thin films on bare sapphire

Microstructural and superconducting properties of YBa2Cu3O7-x thin films grown in situ on bare sapphire by pulsed laser deposition using YBa2Cu3O7-x targets doped with 7 and 10 wt% Ag have been studied. Ag-doped films grown at 730 degrees C on sapphire have shown very significant improvement over the undoped YBa2Cu3O7-x films grown under identical condition. A zero resistance temperature of 90 K and a critical current density of 1.2 x 10(6) A/cm(2) at 77 K have been achieved on bare sapphire for the first time. Improved connectivity among grains and reduced reaction rate between the substrate and the film caused due to Ag in the film are suggested to be responsible for this greatly improved transport properties.

Spectroscopic Studies on Silver Selenide Thin Films

Silver selenide thin films of thickness between 80 nm and 160 nm were prepared by thermal evaporation technique at a high vacuum better than 2x10(-5)mbar on well cleaned glass substrates at a deposition rate of 0.2 nm/sec. Silver selenide thin films were polycrystalline with orthorhombic structure. Ellipsometric spectra of silver selenide thin films have been recorded in the wavelength range between 300 nm and 700 nm. Optical constants like refractive index, extinction coefficient, absorption coefficient, and optical band gap of silver selenide thin film have been calculated from the recorded spectra. The refractive index of silver selenide has been found to vary between 1.9 and 3.2 and the extinction coefficient varies from 0.5 to 1.6 with respect to their corresponding thickness of the films. Transmittance spectra of these films have been recorded in the wavelength range between 300 nm and 900 nm and its spectral data are analysed. The photoluminescence studies have been carried out on silver selenide thin films and the strong emission peak is found around 1.7 eV. The calculated optical band of thermally evaporated silver selenide thin films is found to be around 1.7 eV from their Ellipsometric, UV-Visible and Photoluminescence spectroscopic studies.

Synthesis of Nano Structured Carbon Nitride by Pyrolysis Assisted Chemical Vapour Deposition

Nanostructured carbon nitride films were prepared by pyrolysis assisted chemical vapour deposition. A two zone furnace with a uniform temperature over a length of 20 cm in both the zones was built. The precursor Azabenzimidazole (C6H5N3) taken in a quartz tube was evaporated at zone A and pyrolysed at zone B at a temperature of 800 degrees C. The FTIR spectrum of the prepared sample shows peaks at 1272 cm(-1) and 1591 cm(-1) corresponding to C-N stretching and C=N respectively, which confirms the bonding of nitrogen with carbon. Raman D and G peaks are observed at 1357 cm(-1) and 1560 cm(-1) respectively. X-ray photoelectron spectroscopy (XPS) shows the formation of pi bonding between carbon and nitrogen atoms. These observations along with XRD analysis show the formation of crystallites of alpha-C3N4 and beta-C3N4 in the background of graphitic C3N4. The size of the nanocrystals estimated from the SEM images is similar to 100 nm.

Pulsed laser deposition of strontium titanate thin films for dynamic random access memory applications

Polycrystalline strontium titanate (SrTiO3) films were prepared by a pulsed laser deposition technique on p-type silicon and platinum-coated silicon substrates. The films exhibited good structural and dielectric properties which were sensitive to the processing conditions. The small signal dielectric constant and dissipation factor at a frequency of 100 kHz were about 225 and 0.03 respectively. The capacitance-voltage (C-V) characteristics in metal-insulator-semiconductor structures exhibited anomalous frequency dispersion behavior and a hysteresis effect. The hysteresis in the C-V curve was found to be about 1 V and of a charge injection type. The density of interface states was about 1.79 x 10(12) cm(-2). The charge storage density was found to be 40 fC mu m(-2) at an applied electric field of 200 kV cm(-1). Studies on current-voltage characteristics indicated an ohmic nature at lower voltages and space charge conduction at higher voltages. The films also exhibited excellent time-dependent dielectric breakdown behavior.

Ultrasonic spray pyrolysis of CZTS solar cell absorber layers and characterization studies

CZTS (Copper Zinc Tin Sulphide) is a wide band gap quartnery chalcopyrite which has a band gap of about 1.45 eV and an absorption coefficient of 10(4) cm(-1); thus making it an ideal material to be used as an absorber layer in solar cells. Ultrasonic Spray Pyrolysis is a deposition technique, where the solution is atomized ultrasonically, thereby giving a fine mist having a narrow size distribution which can be used for uniform coatings on substrates. An Ultrasonic Spray Pyrolysis equipment was developed and CZTS absorber layers were successfully grown with this technique on soda lime glass substrates using aqueous solutions. Substrate temperatures ranging from 523 K to 723 K were used to deposit the CZTS layers and these films were characterized using SEM, EDAX and XRD. It was observed that the film crystallized in the kesterite structure and the best crystallites were obtained at 613 K. It was observed that the grain size progressively increased with temperature. The optical band gap of the material was obtained as 1.54 eV.

Effect of surfactant dispersed in oil on interaction force between an oil film and a steel substrate in water

The oil phase, in an oil-in-water emulsion on a steel substrate, is strongly repelled by the substrate. The oil in this situation does not wet the steel and steel/steel friction is high. In this work we disperse anionic surfactants in an oil film and study the effect of this dispersion on the force of interaction between a silica colloid probe (AFM) carrying the oil film and a steel substrate in water. It is observed that when the surfactant is oil insoluble and the interaction time is short the strong entropic repulsion (without the surfactant) is replaced by a strong attraction. The steel on steel sliding friction in this case is low compared to that what is achieved when the surfactant is soluble in oil. The rationale underlying these interactions is explored here. (C) 2011 Elsevier B.V. All rights reserved.

Study of electrical properties of pulsed excimer laser deposited strontium titanate films

Polycrystalline SrTiO3 films were prepared by pulsed excimer laser ablation on Si and Pt coated Si substrates. Several growth parameters were varied including ablation fluence, pressure, and substrate temperature. The structural studies indicated the presence of [100] and [110] oriented growth after annealing by rapid thermal annealing at 600-degrees-C for 60 s. Deposition at either lower pressures or at higher energy densities encouraged film growth with slightly preferred orientation. The scanning electron microscopy studies showed the absence of any significant particulates on the film surface. Dielectric studies indicated a dielectric constant of 225, a capacitance density of 3.2 fF/mum2, and a charge density of 40 fC/mum for films of 1000 nm thick. The dc conductivity studies on these films suggested a bulk limited space charge conduction in the high field regime, while the low electric fields induced an ohmic conduction. Brief time dependent dielectric breakdown studies on these films, under a field of 250 kV/cm for 2 h, did not exhibit any breakdown, indicating good dielectric strength.

Chemical and microstructural modifications in LiPON thin films exposed to atmospheric humidity

Lithium phosphorus oxynitride (LiPON), the widely used solid electrolyte for thin film microbatteries, is not compatible with the ambient humid temperatures. The reasons for reduction in ionic conductivity of LiPON thin films from 2.8 x 10(-6) Scm(-1) to 9.9 x 10(-10) Scm(-1) when exposed to air are analyzed with the aid of AC impedance measurements, SEM, XPS and stylus profilometry. Initially, particulate-free film surfaces obtained soon after rf sputter deposition in N-2 ambient conditions becomes covered with microstructures, forming pores in the film when exposed to air. LiPON films are deposited on Ti coated silicon in addition to bare silicon, ruling out the possibility of stress-related rupturing from the LiPON/Si interface. The reduction of nitrogen, phosphorus, and increased presence of lithium, oxygen and carbon over the film surface lowers the ionic conductivity of LiPON films when exposed to air. (c) 2011 Elsevier B.V. All rights reserved.

A thermodynamic criterion for selection of gas compositions for diamond deposition

Isoactivity lines for carbon with respect to diamond as the standard state have been calculated in the ternary system C-H-O at 1223 K to identify the diamond deposition domain. The gas composition is calculated by suppressing the formation of all condensed forms of carbon using the SOLGASMIX free-energy minimization program. Thirty six gas species were included in the calculation. From the gas composition, isoactivity lines are computed using recent data on the Gibbs energy of diamond. Except for activities less than 0.1, the isoactivity lines are almost linear on the C-H-O ternary diagram. Gas compositions which generate activity of diamond ranging from 1 to 100 at 1223 K fall inside a narrow wedge originating from the point representing CO. This wedge is very similar to the revised lens-shaped diamond growth domain identified by Bachman et al., using inputs from experiment. The small difference between the calculated and observed domains may be attributed to variation in the supersaturation required for diamond deposition with gas composition. The diamond solubility in the gas phase along the isoactivity line for a(di)=100 and P=6.7 kPa exhibits a minimum at 1280 K, which is close to the optimum temperature found experimentally. At higher supersaturations, non-diamond forms of carbon, including amorphous varieties, are expected. The results suggest that thermodynamic calculations can be useful for locating diamond growth domains in more complex CVD systems containing halogens, for which very little experimental data is available.