Formation of silicon-on-insulator layers by electron beam recrystallization

This paper outlines the development of the electron beam recrystallization approach to the formation of silicon-on-insulator layers. The technique of recrystallizing seeded layers by a line electron beam has been widely adopted. Present practice in electron beam recrystallization is reviewed, both from materials and process points of view. Applications of silicon-on-insulator substrates formed in this way are described, particularly in three-dimensional integration. © 1988.

An experimental and computational study of the formation of a streamwise shed vortex in a turbine stage

Shear layers shed by aircraft wings roll up into vortices. A similar, though far less common, phenomenon can occur in the wake of a turbomachine blade. This paper presents experimental data from a new single stage turbine that has been commissioned at the Whittle Laboratory. Two low aspect ratio stators have been tested with the same rotor row. Surface flow visualisation illustrates the extremely strong secondary flows present in both NGV designs. These secondary flows lead to conventional passage vortices but also to an intense vortex sheet which is shed from the trailing edge of the blades. Pneumatic probe traverse show how this sheet rolls up into a concentrated vortex in the second stator design, but not in the first. A simple numerical experiment is used to model the shear layer instability and the effects of trailing edge shape and exit yaw angle distribution are investigated. It is found that the latter has a strong influence on shear layer rollup: inhibiting the formation of a vortex downstream of NGV 1 but encouraging it behind NGV 2.

Millisecond processing beyond chip technology: From electronics to photonics

There is a clear and increasing interest in short time annealing processing far below one second, i.e. the lower limit of Rapid Thermal Processing (RTP) called spike annealing. This was driven by the need of suppressing the so-called Transient Enhanced Diffusion in advanced boronimplanted shallow pn-junctions in silicon technology. Meanwhile the interest in flash lamp annealing (FLA) in the millisecond range spread out into other fields related to silicon technology and beyond. This paper reports on recent experiments regarding shallow junction engineering in germanium, annealing of ITO layers on glass and plastic foil to form an conductive layer as well as investigations which we did during the last years in the field of wide band gap semiconductor materials (SiC, ZnO). A more common feature evolving from our work was related to the modeling of wafer stress during millisecond thermal processing with flash lamps. Finally recent achievements in the field of silicon-based light emission basing on Metal-Oxide-Semiconductor Light Emitting Devices will be reported. © 2007 IEEE.