1000 resultados para Wave Confinement


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An amorphous photoluminescent material based on a dithienylbenzothiadiazole structure has been used for the fabrication of organic red-light-emitting diodes. The synergistic effects of the electron-transport ability and exciton confinement of the emitting material allow for the fabrication of efficient pure-red-light-emitting devices without a hole blocker.

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The dewetting behavior of thin polystyrene (PS) film has been investigated by placing an upper plate with a ca. 140 nm gap from the underlying substrate with the spin-coated thin polymer films. Three different kinds of dewetting behaviors of thin PS film have been observed after annealing according to the relative position of the PS film to the upper plate. Since the upper plate is smaller than the underlying substrate, a part of the polymer film is not covered by the plate. In this region (I), thin PS film dewetting occurs in a conventional manner, as previously reported. While in the region covered by the upper plate (III), the PS film exhibits unusual dewetted patterns. Meanwhile, in the area right under the edge of the plate (II) (i.e., the area between region I and region III), highly ordered arrays of PS droplets are formed. Formation mechanisms of different dewetted patterns are discussed in detail. This study may offer an effective way to improve the understanding of various dewetting behaviors and facilitate the ongoing exploration of utilizing dewetting as a patterning technique.

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HigWy efficient DCJTB-doped device was realized by enhanced electron injection and exciton confinement. A fluorine end-capped linear phenylene/oxadiazole oligomer 2,5-bis(4-fluorobiphenyl-4'-yl)-1,3,4-oxadiazole (1) and a trifluoromethyl end-capped oligomer 2,5-bis(4-trifluoromethylbiphenyl-4'-yl)-1,3,4-oxadiazole (2) were designed and incorporated as an electron transporting/hole blocking material in the device structure ITO/NPB (60 mn)/DCJTB:Alq(3) (0.5%, 10 nm)/1 or 2 (20 nm)/Alq(3) (30 mn)/LiF (1 nm)/Al (100 nm). The devices showed highly efficient red luminescence. In particular, the device based on 1 achieved pure red luminescence at 620 run originating from DCJTB, with a narrow FWHI of 65 nm, maximal brightness of 13,300 cd/m(2) at voltage of 20.8 V and current density of ca. 355 mA/cm(2). High current and power efficiencies (> 3.6 cd/A. 1.01m/W) were retained within a wide range of current densities. Our results show efficient and stable DCJTB-doped red electroluminescence could be anticipated for practical applications by taking advantage of the present approaches. The control experiments using BCP were also studied.