Critical investigation of high performance spin-coated high-kappa titania thin films based MOS capacitor

We report the tunable dielectric constant of titania films with low leakage current density. Titanium dioxide (TiO2) films of three different thicknesses (36, 63 and 91 nm) were deposited by the consecutive steps of solution preparation, spin-coating, drying, and firing at different temperatures. The problem of poor adhesion between Si substrate and TiO2 insulating layer was resolved by using the plasma activation process. The surface roughness was found to increase with increasing thickness and annealing temperature. The electrical investigation was carried out using metal-oxide-semiconductor structure. The flat band voltage (V-FB), oxide trapped charge (Q(ot)), dielectric constant (kappa) and equivalent oxide thicknesses are calculated from capacitance-voltage (C-V) curves. The C-V characteristics indicate a thickness dependent dielectric constant. The dielectric constant increases from 31 to 78 as thickness increases from 36 to 91 nm. In addition to that the dielectric constant was found to be annealing temperature and frequency dependent. The films having thickness 91 nm and annealed at 600 A degrees C shows the low leakage current density. Our study provides a broad insight of the processing parameters towards the use of titania as high-kappa insulating layer, which might be useful in Si and polymer based flexible devices.

Advantages of top-gate, high-k dielectric carbon nanotube field-effect transistors

The subthreshold slope, transconductance, threshold voltage, and hysteresis of a carbon nanotube field-effect transistor (CNT FET) were examined as its configuration was changed from bottom-gate exposed channel, bottom-gate covered channel to top-gate FET. An individual single wall CNT was grown by chemical vapor deposition and its gate configuration was changed while determining its transistor characteristics to ensure that the measurements were not a function of different chirality or diameter CNTs. The bottom-gate exposed CNT FET utilized 900 nm SiO2 as the gate insulator. This CNT FET was then covered with TiO2 to form the bottom-gate covered channel CNT FET. Finally, the top-gate CNT FET was fabricated and the device utilized TiO 2 (K ∼ 80, equivalent oxide thickness=0.25 nm) as the gate insulator. Of the three configurations investigated, the top-gate device exhibited best subthreshold slope (67-70 mV/dec), highest transconductance (1.3 μS), and negligible hysteresis in terms of threshold voltage shift. © 2006 American Institute of Physics.

中频对靶反应磁控溅射Al_2O_3、TiO_2、ZrO_2功能薄膜的特性研究

利用中频对靶磁控溅射技术,分别制备出厚度低于5μm、表面光滑的TiO2、ZrO2、Al2O33种功能薄膜。研究了不同工艺条件下薄膜的成膜速率和表面形貌,用四探针法测量了材料的薄膜电阻,并表征了膜层材料在大气压热等离子射流急速加热条件下的抗热冲击特性。

飞秒激光作用下全向高反膜破坏的激发过程

设计和制备了全向高反膜SiO2／TiO2，研究了它在不同脉冲宽度、不同脉冲能量的飞秒激光作用下的破坏阈值和烧蚀深度．利用发展的抽运．探针方法，研究了抽运脉冲作用下材料中导带电子的超快激发和能量沉积过程，建立并求解了飞秒激光激发材料和材料的激发对抽运光自身反作用的耦合动力学模型．模型较好地揭示了材料破坏的激发过程．

The ultrafast excitation processes in femtosecond laser-induced damage in dielectric omnidirectional reflectors

A pump and probe system is developed, where the probe pulse duration tau is less than 60 fs while the pump pulse is stretched up to 150-670 fs. The time-resolved excitation processes and damage mechanisms in the omnidirectional reflectors SiO2/TiO2 and ZnS/MgF2 are studied. It is found that as the pump pulse energy is higher than the threshold value, the reflectivity of the probe pulse decreases rapidly during the former half, rather than around the peak of the pump pulse. A coupled dynamic model based on the avalanche ionization (AI) theory is used to study the excitation processes in the sample and its inverse influences on the pump pulse. The results indicate that as pulse duration is longer than 150 fs, photoionization (PI) and AI both play important roles in the generation of conduction band electrons (CBEs); the CBE density generated via AI is higher than that via PI by a factor of 10(2)-10(4). The theory explains well the experimental results about the ultrafast excitation processes and the threshold fluences. (c) 2006 American Institute of Physics.

Estudo teórico da redução fotocatalítica do gás carbônico a metanol utilizando dióxido de titânio

O aumento da concentração de gases de efeito estufa (GEE) de fontes antropogênicas tem sido visto como uma das principais contribuições para o aquecimento global, ameaçando a vida no planeta. O dióxido de carbono (CO2) é um dos principais GEE e suas fontes geradoras estão relacionadas a processos essenciais à sociedade, como a produção de energia, produtos diversos e transporte. A conversão do CO2 parece ser uma alternativa promissora para reduzir a emissão deste gás na atmosfera. De particular interesse para este estudo, a fotorredução do CO2 a metanol pode contribuir para mitigar o problema dos GEE, gerando um importante insumo da indústria química. Assim, este estudo tem por objetivo utilizar cálculos quanto-mecânicos, como a Teoria do Funcional Densidade, para investigar um caminho para a reação de redução do CO2. A reação de redução do CO2 à ácido fórmico, formaldeído e metanol foi estudada sem a interação com o catalisador e na presença de dióxido de titânio como catalisador. Foi realizada uma comparação de cálculos em diferentes níveis teóricos e diferentes bases, com dados experimentais. Para os cálculos envolvendo o TiO2, foi utilizado o nível B3LYP/6-31G(d,p). Frequências vibracionais também foram calculadas para cada etapa, permitindo a identificação de possíveis estados de transição e estimativa de barreiras de reação (energia potencial). Cálculos de coordenada intrínseca de reação (IRC) foram empregados para confirmar que os estados de transição encontrados, estão relacionados a cada etapa estudada. A comparação da redução do dióxido de carbono a ácido fórmico, com e sem catalisador, mostrou que a presença do dióxido de titânio reduziu em mais de 25,0% a barreira reacional desta etapa

Petrologia dos diabásios da região de Angra dos Reis, RJ

O tema abordado nesta dissertação de mestrado é a petrogênese dos diabásios do Eocretáceo que integram o Enxame de Diques da Serra do Mar na região de Angra dos Reis (RJ). Estes diques intrudem rochas do Terreno Ocidental e do Arco Magmático Rio Negro, inserindo-se no contexto geodinâmico de fragmentação do Gondwana no Cretáceo Inferior. Essas intrusões são subverticais e orientam-se preferencialmente a N039E. Intrusões retilíneas são as mais observadas em campo. Os diabásios são compostos, essencialmente, por plagioclásio e clinopiroxênios (augita e pigeonita). Quartzo, minerais opacos, apatita e olivina ocorrem como minerais acessórios. A composição mineral secundária é marcada pela presença de biotita, uralita e saussurita. Os diabásios estudados compreendem uma série transicional com afinidade toleítica. Os estudos petrológicos revelam a existência de cinco suítes de alto-TiO2, tendo sido as mesmas discriminadas com base nas razões La/Yb de amostras com o mesmo teor de MgO. Destas, apenas a suíte 2 têm quantidade mínima de amostras para avaliação de processos evolutivos. O resultado da modelagem petrogenética aponta que o processo evolutivo mais provável para a geração dos diabásios da suíte 2 é cristalização fracionada sem mudança na assembleia fracionante. As amostras representativas dos líquidos parentais das cinco suítes apresentam razões La/Nb e La/Yb maiores que a unidade, típicas de derivação de fonte enriquecida, que, em várias províncias basálticas continentais, tem sido associada à fusão exclusiva do manto litosférico subcontinental ou a sua participação em processos de mistura de fontes. A discriminação de fontes mantélicas foi feita exclusivamente com base nos teores de elementos traços de amostras representativas de líquidos parentais das cinco suítes discriminadas na área de estudo. Os modelos indicam que todas as cinco suítes estudadas estão relacionadas a fontes harzburgíticas com granada residual. A suíte 5 da área de estudo não pode ser associada à mesma fonte mantélica geradora das suítes 1, 2, 3 e 4 que, por sua vez, se originaram por diferentes quantidades de fusão parcial (respectivamente, 44%, 35%, 31% e 25%) de uma mesma fonte. Cabe ressaltar que a ocorrência de duas suítes, com razões La/Yb muito distintas, porém geograficamente muito próximas, sugere que processos de heterogeneidade mantélica, tipicamente laterais, devem também ocorrer verticalmente.

隔板玻璃表面宽光谱增透膜的制备与性能

利用溶胶-凝胶提拉方法在隔板玻璃表面涂制得到由TiO2与SiO2组成的λ/2-λ/4型宽光谱增透膜。通过溶胶粘度、凝胶时间及红外光谱等研究了TiO2涂膜溶胶的稳定性与相应膜层性能，测试了双层增透膜的透过率、抗高能氙灯辐照性能及使用性能等。结果表明，控制合适的原料配比、降低薄膜烘烤升温速率，可得到适于大面积涂膜的稳定TiO2溶胶，有效改善TiO2膜层质量；隔板玻璃表面增透膜在450-900nm光谱范围内平均透过率高达约98％，使“神光-Ⅱ”第九路主放大器的实际增益提高5．5％-6．5％且具有良好的抗高能氙灯

光在随机增益介质中的放大

结合环形腔理论。运用蒙特卡罗法模拟了光子在介质中的随机行走。研究了倍频Nd：YAG（脉宽6ns，频率20Hz）脉冲激光器作为泵浦光，在TiO2／若丹明B有机增益介质中，散射微粒的颗粒密度和泵浦光面积对随机激光器阈值强度的影响。模拟结果表明：随机激光阈值和光子在增益介质中的随机行走路程长度和光子通过边界返回增益区和非增益区的几率有关。随着泵浦光面积的增加，随机激光器阈值降低；增益介质中散射颗粒密度的增加降低了随机激光器的阈值。

Optical properties of zirconia-titania-ORMOSIL films for temperature tuning distributed feedback waveguide lasers

The zirconia-titania-ORMOSIL waveguide thin films with considerable optical quality were prepared by the sol-gel process. The refractive index (n) and the extinction coefficient (k) were determined by a scanning ellipsometer. Wavelength tunable output of distributed feedback waveguide lasing was demonstrated in Rhodamine 6G doped ZrO2 TiO2-ORMOSIL thin films by varying the temperature, and about 5.5 nm wavelength tuning range was achieved around the emission wavelength of 599 nm. The thermal-optic coefficient (dn/dT) of the active ZrO2-TiO2-ORMOSIL films was deduced. (c) 2005 Elsevier B.V. All rights reserved.

Broadband near-infrared emission from transparent Ni2+-doped silicate glass ceramics

Transparent Ni2+-doped MgO-Al2O3-TiO2-SiO2 glass ceramics were prepared, and the optical properties of Ni2+-doped glass ceramics were investigated. Broadband emission centered at 1320 nm was observed by 980 nm excitation. The longer wavelength luminescence compared with Ni2+-doped Li2O-Ga2O3-SiO2 glass ceramics is ascribed to the low crystal field hold by Ni2+ in MgO-Al2O3-TiO2-SiO2 glass ceramics. The change in optical signals at the telecommunication bands with or without 980 nm excitation was also measured when the seed beam passes through the bulk gain host.(C) 2007 American Institute of Physics.

Nano-polypyrrole supercapacitor arrays prepared by layer-by-layer assembling method in anodic aluminum oxide templates

A novel method for preparing nano-supercapacitor arrays, in which each nano-supercapacitor consisted of electropolymerized Polypyrrole (PPy) electrode / porous TiO2 separator / chemical polymerized PPy electrode, was developed in this paper. The nano-supercapacitors were fabricated in the nano array pores of anodic aluminum oxide template using the bottom-up, layer-by-layer synthetic method. The nano-supercapacitor diameter was 80 nm, and length 500 nm. Based on the charge/discharge behavior of nano-supercapacitor arrays, it was found that the PPy/TiO2/PPy array supercapacitor devices performed typical electrochemical supercapacitor behavior. The method introduced here may find application in manufacturing nano-sized electrochemical power storage devices in the future for their use in the area of microelectronic devices and microelectromechanical systems.

Development of the heterogeneous catalysts for the production of levulinic acid from furfuryl alcohol

207 p.

Enhanced broadband near-infrared luminescence from transparent Yb 3+/Ni2+ codoped silicate glass ceramics

The near-infrared emission intensity of Ni2+ in Yb3+/Ni2+ codoped transparent MgO-Al2O3-Ga2O3-SiO2-TiO2 glass ceramics could be enhanced up to 4.4 times via energy transfer from Yb3+ to Ni2+ in nanocrystals. The best Yb2O3 concentration was about 1.00 mol%. For the Yb3+/Ni2+ codoped glass ceramic with 1.00 mol% Yb2O3, a broadband near-infrared emission centered at 1265 nm with full width at half maximum of about 300 nm and lifetime of about 220 mu s was observed. The energy transfer mechanism was also discussed. (C) 2008 Optical Society of America.

Transparent Ni2+-doped silicate glass ceramics for broadband near-infrared emission

Transparent Ni2+-doped MgO-Al2O3-Ga2O3-SiO2-TiO2 glass ceramics were fabricated. The precipitated nanocrystal phase in the glass ceramics was identified by X-ray diffraction and transmission electron microscope. Broadband near-infrared emission centered at 1220 nm with full width at half maximum of about 240 nm and lifetime of about 250 mu s was observed with 980 nm excitation. The longer wavelength emission compared with Ni2+-doped MgAl2O4 crystal was attributed to the low crystal field occupied by Ni2+ in the glass ceramics. The present Ni2+-doped transparent glass ceramics may have potential applications in broadband optical amplifiers. (c) 2007 Elsevier B.V. All rights reserved.